BLF1047 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管型号: | BLF1047 |
厂家: | NXP |
描述: | UHF power LDMOS transistor |
文件: | 总8页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF1047
UHF power LDMOS transistor
Preliminary specification
2000 Feb 02
Supersedes data of 1999 July 01
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
FEATURES
PINNING - SOT541A
PIN
• High power gain
DESCRIPTION
• Easy power control
• Excellent ruggedness
1
2
3
drain
gate
• Source on underside eliminates DC isolators, reducing
common mode inductance
source, connected to flange
• Designed for broadband operation (HF to 1 GHz).
handbook, halfpage
1
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
3
2
DESCRIPTION
Top view
MBK765
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT541A) with a ceramic cap. The common source is
connected to the mounting flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f1 = 960; f2 = 960.1
960
26
26
70 (PEP)
70
>14
>14
>35
>45
≤−26
−
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 02
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
65
UNIT
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
−
−
−
V
V
A
±20
9
Tstg
Tj
−65
+150
200
°C
°C
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth j-h
thermal resistance from junction to heatsink
Th = 25 °C, Pdis = 100 W;
1.15
note 1
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
CONDITIONS
VGS = 0; ID = 1.4 mA
MIN.
65
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
IDSX
IGSS
gfs
−
−
V
VDS = 10 V; ID = 140 mA
VGS = 0; VDS = 26 V
4
−
5
V
−
−
10
−
µA
A
VGS = VGSth + 9 V; VDS = 10 V
VGS = ±20 V; VDS = 0
20
−
−
gate leakage current
−
250
−
nA
S
forward transconductance
drain-source on-state resistance
input capacitance
VDS = 10 V; ID = 5 A
−
3
RDSon
Cis
VGS = VGSth + 9 V; ID = 5 A
VGS = 0; VDS = 26 V; f = 1 MHz
VGS = 0; VDS = 26 V; f = 1 MHz
VGS = 0; VDS = 26 V; f = 1 MHz
−
200
75
65
2.5
−
mΩ
pF
pF
pF
−
−
Cos
output capacitance
−
−
Crs
feedback capacitance
−
−
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 1.15 K/W, unless otherwise specified.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f1 = 960; f2 = 960.1
960
26
26
70 (PEP)
70
>14
>14
>35
>45
≤−26
−
Ruggedness in class-AB operation
The BLF1047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 960 MHz at rated load power.
2000 Feb 02
3
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT541A
Package under
development
Philips Semiconductors reserves the
right to make changes without notice.
D
A
F
3
D
1
U
1
B
q
C
c
1
E
p
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
Q
C
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
11.05
10.80
5.74
4.60
15.39 15.39 10.26 10.29 1.78 20.83 3.43
15.09 15.09 10.06 10.03 1.52 19.81 3.18
2.69
2.44
27.31 9.91
27.05 9.65
0.18
0.10
22.10
0.87
0.25
0.01
0.51
0.02
mm
0.435
0.425
0.226
0.181
0.606 0.606 0.404 0.405 0.070 0.820 0.135 0.106
0.594 0.594 0.396 0.395 0.060 0.780 0.125 0.096
1.075 0.390
1.065 0.380
0.007
0.004
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-12-28
00-01-13
SOT541A
2000 Feb 02
4
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 02
5
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
NOTES
2000 Feb 02
6
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
NOTES
2000 Feb 02
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Brazil: see South America
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Czech Republic: see Austria
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603516/04/pp8
Date of release: 2000 Feb 02
Document order number: 9397 750 06754
相关型号:
©2020 ICPDF网 联系我们和版权申明