BLF2022-120 [NXP]

UHF push-pull power LDMOS transistor; 超高频推挽功率LDMOS晶体管


型号：	BLF2022-120
厂家：	NXP
描述：	UHF push-pull power LDMOS transistor 超高频推挽功率LDMOS晶体管晶体晶体管
文件：	总7页 (文件大小：90K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D427

BLF2022-120

UHF push-pull power

LDMOS transistor

Preliminary specification

2000 Dec 12

Philips Semiconductors

Preliminary specification

UHF push-pull power LDMOS transistor

BLF2022-120

FEATURES

PINNING - SOT539A

• High power gain

DESCRIPTION

• Easy power control

• Excellent ruggedness

drain 1

drain 2

gate 1

gate 2

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (HF to 2.2 GHz).

source connected to flange

APPLICATIONS

• Common source class-AB operation for PCN and PCS

applications in the 2000 to 2200 MHz frequency range.

DESCRIPTION

Top view

MBK880

Push-pull silicon N-channel enhancement mode lateral

D-MOS transistor encapsulated in a 4-lead flange package

(SOT539A) with a ceramic cap. The common source is

connected to the mounting flange.

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at T_h= 25 °C in a common source test circuit.

V_DS

(V)

P_L

(W)

G_p

(dB)

η_D

(%)

d_im

(dBc)

MODE OF OPERATION

(MHz)

2-tone, class-AB

f₁= 2170; f₂= 2170.1

120 (PEP)

>11

>30

≤−25

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER

V_DS

MIN.

MAX.

UNIT

drain-source voltage

gate-source voltage

drain current (DC)

storage temperature

junction temperature

−

V_GS

I_D

T_stg

T_j

−65

+150

°C

−

200

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2000 Dec 12

Philips Semiconductors

Preliminary specification

UHF push-pull power LDMOS transistor

BLF2022-120

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE UNIT

R_{th j-mb}

R_{th mb-h}

thermal resistance from junction to mounting-base P_L= 120 W; T_mb= 50 °C, note 1

0.35

0.15

K/W

thermal resistance from mounting-base to heatsink

Note

1. Thermal resistance is determined under nominal 2-tone RF operating conditions.

CHARACTERISTICS

T_j= 25 °C; per section unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V_(BR)DSS

V_GSth

I_DSS

drain-source breakdown voltage

gate-source threshold voltage

drain-source leakage current

drain cut-off current

V_GS= 0; I_D= 1.4 mA

−

V_DS= 10 V; I_D= 140 mA

V_GS= 0; V_DS= 26 V

4.4

−

5.5

−

µA

I_DSX

V_GS= V_GSth+ 9 V; V_DS= 10 V

V_GS= 15 V; V_DS= 0

V_DS= 10 V; I_D= 5 A

−

I_GSS

gate leakage current

−

g_fs

forward transconductance

drain-source on-state resistance

feedback capacitance

−

4.2

0.15

3.4

R_DSon

C_rs

V_GS= V_GSth+ 9 V; I_D= 5 A

−

Ω

V_GS= 0; V_DS= 26 V; f = 1 MHz;

note 1

−

Note

1. Capacitance of die only.

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T_h= 25 °C; R_{th j-h}= 0.5 K/W; unless otherwise specified.

V_DS

(V)

I_DQ

(mA)

P_L

(W)

G_p

(dB)

η_D

(%)

d_im

(dBc)

MODE OF OPERATION

(MHz)

2-tone, class-AB

f₁= 2170; f₂= 2170.1

2 x 500 120 (PEP)

>11

>30

≤−25

Ruggedness in class-AB operation

The BLF2022-120 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under

the following conditions: V_DS= 28 V; f = 2170 MHz, P_L= 120 W (CW).

2000 Dec 12

Philips Semiconductors

Preliminary specification

UHF push-pull power LDMOS transistor

BLF2022-120

G_P

(dB)

η_D

(%)

G_P

(dB)

ACPR

(dBc)

G_P

-20

ACPR

-40

η_D

ACPR10

-60

-80

P_Lavg (dBm)

V_DS= 28 V; I_DQ= 2 x 500 mA;

f₁= 2140 MHz; f₂= 2140.1 MHz;T_h≤ 25 °C.

Input signal: 3GPP W-CDMA 15DPCH

Peak to average ratio: 10.27 dB (0.0001 %)

V_DS= 28 V; I_DQ= 2 x 500 mA;

f₁= 2170 MHz; f₂= 2170.1 MHz;T_h≤ 25 °C.

Fig.2 Power gain and drain efficiency as functions of

average load power; typical values.

Fig.3 Power gain and adjacent channel power

ratio as functions of average load power;

typical values.

d_im

(dBc)

-20

-40

d₃

d₅

-60

d₇

-80

P_Lavg (dBm)

V_DS= 28 V; I_DQ= 2 x 500 mA;

f₁= 2170 MHz; f₂= 2170.1 MHz;T_h≤ 25 °C.

Fig.4 Intermodulation distortion as a function of

average load power; typical values.

2000 Dec 12

Philips Semiconductors

Preliminary specification

UHF push-pull power LDMOS transistor

BLF2022-120

PACKAGE OUTLINE

Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads

SOT539A

10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

11.81

11.56

3.30 2.31

3.05 2.01

5.33

3.96

31.55 31.52

30.94 30.96

9.50 9.53 1.75 17.12 25.53 3.73

9.30 9.27 1.50 16.10 25.27 2.72

41.28 10.29

41.02 10.03

0.15

0.08

35.56

1.400

0.25 0.51 0.25

0.010 0.020 0.010

13.72

0.465

0.455

0.130 0.091

0.120 0.079

0.210

0.156

1.242 1.241

1.218 1.219

0.374 0.375 0.069 0.674 1.005 0.147

0.366 0.365 0.059 0.634 0.995 0.107

1.625 0.405

1.615 0.395

0.006

0.003

inches

0.540

REFERENCES

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEDEC

EIAJ

99-12-28

00-03-03

SOT539A

2000 Dec 12

Philips Semiconductors

Preliminary specification

UHF push-pull power LDMOS transistor

BLF2022-120

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

STATUS

DEFINITIONS ⁽¹⁾

Objective specification

Development This data sheet contains the design target or goal specifications for

product development. Specification may change in any manner without

notice.

Preliminary specification Qualification

This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product specification

Production

This data sheet contains final specifications. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values definition  Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

the use of any of these products, conveys no licence or title

under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

2000 Dec 12

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SCA

2000

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under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

603516/09/pp7

Date of release: 2000 Dec 12

Document order number: 9397 750 07842

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