BLF2045 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF2045 |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总11页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF2045
UHF power LDMOS transistor
Preliminary specification
1999 Dec 06
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
FEATURES
PINNING - SOT467C
PIN
• High power gain
DESCRIPTION
• Easy power control
• Excellent ruggedness
1
2
3
drain
gate
• Source on underside eliminates DC isolators, reducing
common mode inductance
source, connected to flange
• Designed for broadband operation.
APPLICATIONS
1
• Communication transmitter applications (PCN/PCS) in
the 1.8 to 2.2 GHz frequency range.
3
DESCRIPTION
2
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
MBK584
Top view
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
2-tone, class-AB
f1 = 2000; f2 = 2000.1
26
30 (PEP)
>10
>30
≤−25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS
VDS drain-source voltage
MIN.
MAX.
65
15
UNIT
−
−
−
V
VGS
ID
gate-source voltage
drain current (DC)
storage temperature
junction temperature
V
4.5
A
Tstg
Tj
−65
150
200
°C
°C
−
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Dec 06
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
thermal resistance from junction to heatsink
Ptot = 87.5 W; Th = 25 °C;
2
note 1
Note
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
IDSX
IGSS
gfs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
VGS = 0; ID = 0.7 mA
−
−
V
VDS = 10 V; ID = 70 mA
1.5
−
−
3.5
5
V
VGS = 0; VDS = 26 V
−
µA
A
VGS = VGSth + 9 V; VDS = 10 V
VGS = 15 V; VDS = 0
9
−
−
gate leakage current
−
−
125
−
nA
S
forward transconductance
drain-source on-state resistance
input capacitance
VDS = 10 V; ID = 2.5 A
−
2
RDSon
Cis
VGS = VGSth + 9 V; ID = 2.5 A
VGS = 0; VDS = 26 V; f = 1 MHz
VGS = 0; VDS = 26 V; f = 1 MHz
VGS = 0; VDS = 26 V; f = 1 MHz
−
340
38
31
1.7
−
mΩ
pF
pF
pF
−
−
Cos
output capacitance
−
−
Crs
feedback capacitance
−
−
100
C
Coss
(pF)
Ciis
Crss
10
1
0
10
20
30
VDS (V)
VGS = 0; f = 1 MHz.
Fig.2 Input, output and feedback capacitance as
functions of drain-source voltage, typical values.
1999 Dec 06
3
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.65 K/W, unless otherwise specified.
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
2-tone, class-AB
f1 = 2000; f2 = 2000.1
26
180
30 (PEP)
>10
>30
≤−25
Ruggedness in class-AB operation
The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; PL = 30 W (CW); f = 2000 MHz.
20
GP
(dB)
50
ηD
(%)
16
40
G
12
8
30
20
10
0
η
4
0
0
10
20
30
40
50
PL (PEP) (W)
Class-AB operation; VDS = 26 V; IDQ = 180mA;
f1 = 2000 MHz; f2 = 2000.1 MHz.
Fig.3 Power gain and efficiency as a functions of
peak envelope load power, typical values.
1999 Dec 06
4
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
0
dim
0
d3
(dBc)
(dBc)
-20
-40
-60
-20
d3
d5
d7
(1)
(2)
-40
-60
(3)
0
10
20
30
40
PL (PEP) (W)
50
0
10
20
30
40
50
PL (PEP) (W)
(1) IDQ = 140mA (2) IDQ = 180mA
(3) IDQ = 220mA
VDS = 26 V; IDQ = 180 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz..
VDS = 26 V;Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz.
Fig.4 Intermodulation distortion as a function of
peak envelope load power; typical values.
Fig.5 Intermodulation distortion as a function of
peak envelope load power; typical values.
5
6
zi
ZL
(Ω)
(Ω)
4
4
2
RL
3
xi
0
2
-2
XL
1
-4
-6
ri
0
1.8
2
2.2
f (GHz)
1.8
2
2.2
f (GHz)
VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th ≤ 25 °C.
VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th ≤ 25 °C.
Fig.6 Input impedance as a function of frequency
(series components); typical values.
Fig.7 Load impedance as a function of frequency
(series components); typical values.
1999 Dec 06
5
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
F1
Vdd
R1
Vgate
R2
C11
C12
C6
C13
C14
C16
C15
L12
L4
C5
C10
Output
50 Ohm
Output
50 Ohm
L10
C1
C3
L3
L14
L5
L6
C4
L16
L1
L2
L13
L11
L9
L15 C9
C8
C2
L7
C7
L8
Fig.8 Testcircuit for 2 GHz.
1999 Dec 06
6
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
List of components
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C2, C4, C7,
C8
Tekelec variable capacitor; type 37281
0.4 to 2.5 pF
C3
multilayer ceramic chip capacitor; note 1 2.4 pF
multilayer ceramic chip capacitor; note 1 11 pF
C1, C5, C9,
C10
C11
C12
multilayer ceramic chip capacitor; note 2 1 nF
multilayer ceramic chip capacitor
100 nF
2222 581 16641
C6, C13, C14, tantal SMD capacitor
C15
4.5 µF; 50 V
C16
F1
electrolytic capacitor
Ferroxcube chip-bead 8DS3/3/8/9-4S2
stripline; note 3
100 µF; 63 V
2222 037 58101
4330 030 36301
L1
50 Ω
13 × 0.9 mm
2 × 0.9 mm
15 × 1.7 mm
37 × 0.9 mm
6 × 1.7 mm
13 × 2.9 mm
6 × 15.8 mm
6 × 26 mm
L2
stripline; note 3
50 Ω
L3
stripline; note 3
34.3 Ω
50 Ω
L4, L12
L5
stripline; note 3
stripline; note 3
34.3 Ω
23.6 Ω
5.6 Ω
L6
stripline; note 3
L7
stripline; note 3
L8
stripline; note 3
3.5 Ω
L9
stripline; note 3
31.9 Ω
24.9 Ω
50 Ω
12 × 1.9 mm
7.4 × 2.7 mm
3 x 0.9 mm
L10
L11
L13
L14
L15
L16
R1, R2
stripline; note 3
stripline; note 3
stripline; note 3
50 Ω
4.15 × 0.9 mm
2.5 × 2.5 mm
2.8 × 0.9 mm
14 × 0.9 mm
stripline; note 3
26.3 Ω
50 Ω
stripline; note 3
stripline; note 3
50 Ω
metal film resistor
10 Ω, 0.6 W
2322 156 11009
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad PCB with Teflon dielectric (εr = 6.15); thickness 0.64 mm.
1999 Dec 06
7
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
60
60
BLF2045 INPUT
50
BLF2045 OUTPUT
50
C11
C13
C14
C16
C15
F1
C6
C12
R1
R2
C5
C10
C4
C2
C1
C9
C8
C3
C7
BLF2045 INPUT
BLF2045 OUTPUT
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 6.15), thickness 0.64 mm.
The other side is unetched and serves as a ground plane.
Fig.9 Component layout for 2 GHz class-AB test circuit.
1999 Dec 06
8
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
PACKAGE OUTLINE
Flanged LDMOST package; 2 mounting holes; 2 leads
SOT467C
D
A
F
B
3
D
1
U
1
q
C
c
1
E
1
H
U
E
2
A
w
p
M
M
M
B
A
1
2
Q
w
M
M
C
b
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
p
Q
q
U
U
w
w
2
1
1
1
2
1
4.67
3.94
3.43 2.21
3.18 1.96
20.45 5.97
20.19 5.72
5.59 0.15
5.33 0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97 1.65 18.54
5.72 1.40 17.02
14.27
0.562
0.25
0.51
0.135 0.087
0.125 0.077
0.805 0.235
0.795 0.225
0.184 0.220 0.006 0.364 0.365 0.233 0.235 0.065 0.73
0.155 0.210 0.004 0.356 0.355 0.227 0.225 0.055 0.67
inch
0.010 0.020
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-10-28
99-12-06
SOT467C
1999 Dec 06
9
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2045
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Dec 06
10
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68
SCA
© Philips Electronics N.V.
1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
budgetnum/printrun/ed/pp11
Date of release: 1999 Dec 06
Document order number: 9397 750 06635
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