BLF2047L/90 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管型号: | BLF2047L/90 |
厂家: | NXP |
描述: | UHF power LDMOS transistor |
文件: | 总12页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BLF2047L/90
UHF power LDMOS transistor
Product specification
2000 Mar 06
Supersedes data of 2000 Feb 17
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• Easy power control
• Excellent ruggedness
1
2
3
drain
gate
• Source on underside eliminates DC isolators, reducing
common mode inductance
source, connected to flange
• Designed for broadband operation (1.8 to 2.0 GHz)
• Internal input and output matching for high gain and
efficiency.
handbook, halfpage
1
APPLICATIONS
• Common source class-AB operation for PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
3
2
Top view
MBK394
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
Two-tone, class-AB
f1 = 2000; f2 = 2000.1
26
90 (PEP)
>10.5
>30
≤−25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
MIN.
MAX. UNIT
VDS
VGS
ID
drain-source voltage
gate-source voltage
DC drain current
−
65
V
−
±15
12
V
−
A
Tstg
Tj
storage temperature
junction temperature
−65
−
+150
200
°C
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Mar 06
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
Note
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to heatsink Th = 25 °C; Ptot = 92 W; note 1
0.81
K/W
1. Determined under specified RF operating conditions, based on maximum junction temperature.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
VGS = 0; ID = 2.1 mA
−
−
V
VDS = 10 V; ID = 210 mA
VGS = 0; VDS = 26 V
1.5
−
−
3.5
15
−
V
−
µA
A
IDSX
VGS =VGSth + 9 V; VDS = 10 V
VGS = ±15 V; VDS = 0
27
−
−
IGSS
gate leakage current
−
38
−
nA
S
gfs
forward transconductance
drain-source on-state resistance
feedback capacitance
VDS = 10 V; ID = 7.5 A
VGS = VGSth + 9 V; ID = 7.5 A
−
6.0
0.11
5.1
RDSon
Crss
−
−
Ω
VGS = 0; VDS = 26 V; f = 1 MHz;
note 1
−
−
pF
Note
1. The value of capacitance is that of the die only.
2000 Mar 06
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 0.81 K/W; unless otherwise specified.
f
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
MODE OF OPERATION
(MHz)
Two-tone, class-AB
f1 = 2000; f2 = 2000.1
26
525
90 (PEP)
>10.5
>30
≤−25
Ruggedness in class-AB operation
The BLF2047L/90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 26 V; IDQ = 525 mA; PL = 90 W; f = 2000 MHz (single tone).
MCD933
MCD928
(3)
15
50
15
50
handbook, halfpage
handbook, halfpage
η
η
D
D
G
p
G
(%)
40
(%)
40
p
(1)
(2)
(3)
G
p
(dB)
G
p
(dB)
(2)
(1)
η
30
20
10
0
D
30
20
10
0
10
10
η
D
5
0
5
40
80
120
(PEP) (W)
0
40
80
120
P (PEP) (W)
L
P
L
VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 650 mA.
(2) IDQ = 525 mA.
VDS = 26 V; IDQ = 525 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
(3) IDQ = 400 mA.
Fig.2 Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.3 Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
2000 Mar 06
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
MCD929
MCD930
0
0
handbook, halfpage
handbook, halfpage
d
d
3
(dBc)
im
(dBc)
−20
−20
(1)
(2)
(3)
d
3
−40
−40
d
5
d
7
−60
−60
0
40
80
120
(PEP) (W)
0
40
80
120
(PEP) (W)
P
P
L
L
VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 400 mA.
(2) IDQ = 525 mA.
VDS = 26 V; IDQ = 525 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
(3) IDQ = 650 mA.
Fig.4 Intermodulation distortion products as
functions of peak envelope load power;
typical values.
Fig.5 Third-order intermodulation distortion as a
function of peak envelope load power;
typical values.
MGT004
MGT003
4
6
handbook, halfpage
handbook, halfpage
Z
L
Z
i
(Ω)
(Ω)
R
L
2
0
4
x
i
2
r
i
−2
0
X
L
−4
1.8
−2
1.8
2
2.2
2
2.2
f (GHz)
f (GHz)
VDS = 26 V; ID = 525 mA; PL = 90 W; Th ≤ 25 °C.
VDS = 26 V; ID = 525 mA; PL = 90 W; Th ≤ 25 °C.
Fig.6 Load impedance as a function of frequency
(series components); typical values.
Fig.7 Input impedance as a function of frequency
(series components); typical values.
2000 Mar 06
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
MCD932
MCD931
0
15
25
η
handbook, halfpage
handbook, halfpage
D
ACPR
(dB)
(%)
G
p
(dB)
20
G
p
−20
−40
15
10
10
η
D
(1)
(2)
(3)
−60
−80
5
0
5
0
5
10
15
0
5
10
15
P
(W)
P
(W)
L
L
VDS = 26 V; IDQ = 465 mA; Th ≤ 25 °C; f = 1960 MHz; CDMA mode.
(1) Channel spacing/Bandwidth: 2.25 MHz/1 MHz.
(2) Channel spacing/Bandwidth: 1.25 MHz/12.5 kHz.
(3) Channel spacing/Bandwidth: 885 kHz/30 kHz.
VDS = 26 V; IDQ = 465 mA; Th ≤ 25 °C; f = 1960 MHz;
CDMA mode.
CDMA conditions
CDMA conditions
CHANNEL
Pilot
WALSH CODE
CHANNEL
Pilot
WALSH CODE
0
0
Sync
32
Sync
32
Paging
Traffic
1
Paging
Traffic
1
8 to 13
8 to 13
Fig.9 Adjacent channel power reduction as a
function of average load power; typical
values.
Fig.8 Power gain and drain efficiency as functions
of average load power; typical values.
2000 Mar 06
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
F1
R2
C6
R1
C15
C13
V
V
dc
gate
C5
C11
C14
C12
C16
C17
L13
L4
C4
C10
L15
L10
L6
L11
L2
L17
L8
C3
C9
output
50 Ω
input
50 Ω
L19
L16
C7
L18
C8
L20
L1
L3 L5
C2
L7
L12
L14
L9
C1
MGT005
Fig.10 2 GHz class-AB test circuit.
2000 Mar 06
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
List of components
See Figs 10 and 11.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS CATALOGUE NO.
C1, C2, C7, C8 Tekelec variable capacitor; type 37271
0.6 to 4.5 pF
12 pF
C3, C9
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 2
C4, C10
12 pF
C5, C12, C16 electrolytic capacitor
4.5 µF; 50 V
1 nF
C6, C11, C15 multilayer ceramic chip capacitor; note 1
C13, C17
C14
F1
electrolytic capacitor
100 µF; 63 V
100 nF
2222 037 58101
2222 581 16641
4330 030 36301
2.9 × 2.4 mm
4 × 16.3 mm
multilayer ceramic chip capacitor
Ferroxcube chip-bead 8DS3/3/8/9-4S2
stripline; note 3
L1
50 Ω
L2
10.8 Ω
50 Ω
L3
3.7 × 2.4 mm
2 × 30.8 mm
L4
6 Ω
L5
50 Ω
3.6 × 2.4 mm
3 × 19.9 mm
L6
9 Ω
L7
50 Ω
7.8 × 2.4 mm
4 × 8.8 mm
L8
18.5 Ω
24.4 Ω
5.1 Ω
5.1 Ω
25.4 Ω
5.7 Ω
25.4 Ω
10 Ω
L9
5 × 6.3 mm
L10
L11
L12
L13
L14
L15
L16
L17
L18
L19
L20
R1, R2
7 × 37 mm
7 × 40.9 mm
10.1 × 6 mm
2.4 × 32.8 mm
6.4 × 6 mm
3.5 × 20.7 mm
10.8 × 2.4 mm
3 × 7.9 mm
50 Ω
11.8 Ω
50 Ω
2.3 × 2.4 mm
3 × 2.4 mm
50 Ω
50 Ω
5.5 × 2.4 mm
2322 156 11009
metal film resistor
10 Ω, 0.6 W
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm.
2000 Mar 06
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
50
50
95
BLF2047L INPUT
BLF2047L/90 OUTPUT
PH990118
V
V
dd
gs
R2
C17
C6
R1
C15 C14
C16
C11
C5
F1
C13
C10
C4
C12
C9
C3
C8
C2
C1
C7
BLF2047L INPUT
BLF2047L/90 OUTPUT
PH990118
MCD927
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
Fig.11 Component layout for 2 GHz class-AB test circuit.
2000 Mar 06
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
4.72
3.99
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
3.38
3.12
1.70
1.45
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.186
0.157
0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.133 0.067
0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.123 0.057
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-10-13
99-12-28
SOT502A
2000 Mar 06
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Mar 06
11
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SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603516/02/pp12
Date of release: 2000 Mar 06
Document order number: 9397 750 06894
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NXP
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