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BLF4G22S-100,112 [NXP]

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power;
BLF4G22S-100,112
型号： BLF4G22S-100,112
厂家： NXP    NXP
描述：

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power

放大器 CD 晶体管
文件： 总14页 (文件大小：84K)
中文：  中文翻译
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BLF4G22-100; BLF4G22S-100  
UHF power LDMOS transistor  
Rev. 01 — 10 January 2006  
Product data sheet  
1. Product profile  
1.1 General description  
100 W LDMOS power transistor for base station applications at frequencies from  
2000 MHz to 2200 MHz.  
Table 1:  
Typical performance  
Tcase = 25 °C; in a common source class-AB test circuit; IDq = 900 mA; typical values  
Mode of operation f  
(MHz)  
VDS  
(V)  
PL  
(W)  
Gp  
(dB)  
ηD  
(%)  
IMD3  
(dBc)  
ACPR  
(dBc)  
2-carrier  
W-CDMA[1]  
f1 = 2135; f2 = 2145 28  
25 (AV) 13.5  
26  
−37  
−41  
[1] 10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 to 64 DPCH.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features  
■ Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an IDq of  
900 mA:  
◆ Load power = 25 W (AV)  
◆ Gain = 13.5 dB (typ)  
◆ Efficiency = 26 % (typ)  
◆ ACPR = −41 dBc (typ)  
◆ IMD3 = −37 dBc (typ)  
■ Easy power control  
■ Integrated ESD protection  
■ Excellent ruggedness > 10 : 1 VSWR at 100 W CW  
■ High efficiency  
■ High peak power capability (> 150 W)  
■ Excellent thermal stability  
■ Designed for broadband operation (2000 MHz to 2200 MHz)  
■ Internally matched for ease of use  
 
 
 
 
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
1.3 Applications  
■ RF power amplifiers for W-CDMA base stations and multicarrier applications in the  
2000 MHz to 2200 MHz frequency range.  
2. Pinning information  
Table 2:  
Pin  
BLF4G22-100 (SOT502A)  
Pinning  
Description  
Simplified outline  
Symbol  
1
2
3
drain  
gate  
1
3
1
3
2
[1]  
2
source  
sym039  
BLF4G22S-100 (SOT502B)  
1
2
3
drain  
gate  
1
3
1
3
2
[1]  
2
source  
sym039  
[1] Connected to flange  
3. Ordering information  
Table 3:  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
BLF4G22-100  
flanged LDMOST ceramic package; 2 mounting  
holes; 2 leads  
SOT502A  
BLF4G22S-100  
-
earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
4. Limiting values  
Table 4:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
VGS  
ID  
Parameter  
Conditions  
Min  
Max  
65  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
-
−0.5  
+15  
12  
V
-
A
Tstg  
Tj  
storage temperature  
junction temperature  
−65  
+150  
200  
°C  
°C  
-
9397 750 14338  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
2 of 14  
 
 
 
 
 
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
5. Thermal characteristics  
Table 5:  
Symbol  
Rth(j-case)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
thermal resistance from  
junction to case  
Tcase = 80 °C;  
PL = 25 W;  
-
0.76 0.85 K/W  
2-carrier W-CDMA  
6. Characteristics  
Table 6:  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA  
65  
2.5  
2.7  
-
-
-
V
VGS(th)  
VGSq  
IDSS  
gate-source threshold voltage  
gate-source quiescent voltage  
drain leakage current  
VDS = 10 V; ID = 180 mA  
VDS = 28 V; ID = 900 mA  
VGS = 0 V; VDS = 28 V  
VGS = VGS(th) + 6 V;  
3.1  
3.2  
-
3.5  
3.7  
3
V
V
µA  
A
IDSX  
drain cut-off current  
27  
30  
-
VDS = 10 V  
IGSS  
gfs  
gate leakage current  
transfer conductance  
VGS = 15 V; VDS = 0 V  
VDS = 10 V; ID = 10 A  
-
-
-
-
300 nA  
9.0  
0.09  
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V;  
ID = 6 A  
Ω
Crs  
feedback capacitance  
VGS = 0 V; VDS = 28 V;  
f = 1 MHz  
-
2.5  
-
pF  
7. Application information  
Table 7:  
Application information  
Mode of operation: 2-Carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test  
model 1, 1-64 DPCH, f1 = 2112.5 MHz, f2 = 2122.5 MHz, f3 = 2157.5 MHz, f4 = 2167.5 MHz.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
Gp  
power gain  
PL(AV) = 25 W  
PL(AV) = 25 W  
PL(AV) = 25 W  
12.5 13.5  
-
dB  
IRL  
input return loss  
drain efficiency  
9
24  
-
15  
-
dB  
ηD  
26  
-
%
IMD3  
ACPR  
third order intermodulation distortion PL(AV) = 25 W  
adjacent channel power ratio PL(AV) = 25 W  
−37  
−41  
−35  
−39  
dBc  
dBc  
-
7.1 Ruggedness in class-AB operation  
The BLF4G22-100/BLF4G22S-100 are capable of withstanding a load mismatch  
corresponding to VSWR > 10 : 1 through all phases under the following conditions:  
VDS = 28 V; IDq = 900 mA; PL = 100 W (CW).  
9397 750 14338  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
3 of 14  
 
 
 
 
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
001aac270  
40  
−15  
η
(%)  
G
(dB)  
D
ACPR,  
IMD3  
(dBc)  
η
D
p
30  
−25  
IMD3  
20  
10  
0
−35  
−45  
−55  
ACPR  
G
p
0
10  
20  
30  
40  
P
50  
(W)  
L(AV)  
(1) 2-carrier W-CDMA performance; VDS = 28 V, IDq = 900 mA; f1 = 2135 MHz and f2 = 2145 MHz;  
PAR = 7 dB at 0.01 % on CCDF; 3GPP TM1, 64 DPCH.  
Fig 1. 2-carrier W-CDMA ACPR, IMD3, power gain and drain efficiency as functions of  
average load power; typical values  
Table 8:  
Typical impedance values  
VDS = 28 V; IDq = 900 mA; PL = 25 W (AV); Tcase = 25 °C.  
Frequency  
(MHz)  
ZS  
(Ω)  
ZL  
(Ω)  
2110  
2140  
2170  
2.2 + j4.8  
2.2 + j4.6  
2.2 + j4.5  
1.5 − j2.6  
1.5 − j2.4  
1.4 − j2.2  
Table 9:  
Code[1]  
RF gain grouping  
Gain (dB)[2]  
Min  
Max  
13.0  
13.5  
14.0  
14.5  
-
A
B
C
D
E
12.5  
13.0  
13.5  
14.0  
14.5  
[1] 0.2 dB overlap is allowed for measurement reproducibility.  
[2] For 2-carrier W-CDMA at f1 = 2157 MHz, f2 = 2167.5 MHz.  
9397 750 14338  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
4 of 14  
 
 
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
001aac271  
001aac272  
16  
−20  
IMD3  
(dBc)  
G
p
(1)  
(2) (3) (4)  
−30  
(dB)  
(5)  
(1)  
14  
−40  
−50  
−60  
−70  
(4)  
(5)  
12  
10  
(2)  
(3)  
2
3
2
3
1
10  
10  
10  
1
10  
10  
10  
P
(W)  
P
(W)  
L(PEP)  
L(PEP)  
(1) IDq = 600 mA  
(2) IDq = 750 mA  
(3) IDq = 900 mA  
(4) IDq = 1050 mA  
(5) IDq = 1200 mA  
(1) IDq = 600 mA  
(2) IDq = 750 mA  
(3) IDq = 900 mA  
(4) IDq = 1050 mA  
(5) IDq = 1200 mA  
Two-tone measurement;  
VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz  
Two-tone measurement;  
VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz  
Fig 2. Power gain as a function of peak envelope load  
power; typical values  
Fig 3. Third order intermodulation distortion as a  
function of peak envelope power; typical values  
001aac274  
001aac273  
11  
10  
16  
t
50%  
(hr)  
G
p
10  
9
10  
(dB)  
14  
10  
8
7
6
10  
P
P
= 135 W (= 52.1 dBm)  
= 161 W (= 51.3 dBm)  
1dB  
3dB  
12  
10  
10  
10  
100  
140  
180  
220  
260  
0
40  
80  
120  
160  
200  
(W)  
T (°C)  
j
P
L
ton = 8 µs  
toff = 1 ms  
Fig 4. Pulsed peak power capability; typical values  
Fig 5. t50% failures due to electromigration as a  
function of junction temperature  
9397 750 14338  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
5 of 14  
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C1  
C12  
C13  
V
G
R1  
V
D
C11  
C2  
C14  
C4  
C3  
L7  
L14  
C15  
C8 C9 C10  
C5  
C6  
L6  
DUT  
C7  
L1  
L10  
C16  
L11  
L13  
L2 L3  
L12  
L4  
L5  
L8  
L9  
001aac275  
See Table 10 for list of components  
Fig 6. Test circuit for operation at 2.14 GHz  
 
 
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xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x  
50 mm  
C13  
C1  
V
R1  
G
C12  
C11  
C2  
C3  
C14  
C15  
C4  
L7  
L14  
C5  
C8 C9 C10  
75 mm  
C6  
L6  
C16  
C7  
L1  
L2 L3  
L10  
L11  
L13  
L12  
L4  
L5  
L8  
L9  
001aac276  
The components are situated on double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm.  
The other side is unetched and serves as a ground plane.  
See Table 10 for list of components.  
Fig 7. Component layout for 2.14 GHz test circuit  
 
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
Table 10: List of components (see Figure 6 and Figure 7 )  
Component  
Description  
Value  
Dimensions  
C1, C2, C11  
C3  
tantalum capacitor  
10 µF; 35 V  
4.7 µF; 25 V  
8.2 pF  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
[1]  
C4, C10  
C5, C8, C14, multilayer ceramic chip capacitor  
C15  
1.5 µF; 50 V  
[2]  
[1]  
C6  
C7  
C9  
C12  
C13  
C16  
L1  
multilayer ceramic chip capacitor  
0.6 pF  
multilayer ceramic chip capacitor  
4.7 pF  
multilayer ceramic chip capacitor  
220 nF; 50 V  
220 µF; 63 V  
4.7 µF; 50 V  
7.5 pF  
electrolytic capacitor  
tantalum capacitor  
multilayer ceramic chip capacitor  
stripline  
[3]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
[4]  
Z0 = 50 Ω  
Z0 = 50 Ω  
Z0 = 24 Ω  
Z0 = 15 Ω  
Z0 = 9.5 Ω  
Z0 = 60 Ω  
Z0 = 60 Ω  
Z0 = 8.2 Ω  
Z0 = 5.5 Ω  
Z0 = 50 Ω  
Z0 = 50 Ω  
Z0 = 34 Ω  
Z0 = 50 Ω  
Z0 = 43 Ω  
4.7 Ω; 0.1 W  
(W × L) 32.3 mm × 1.7 mm  
(W × L) 2.2 mm × 1.7 mm  
(W × L) 2.3 mm × 4.8 mm  
(W × L) 2.4 mm × 8 mm  
(W × L) 9.3 mm × 14 mm  
(W × L) 4 mm × 1.2 mm  
(W × L) 14.5 mm × 1.2 mm  
(W × L) 9.3 mm × 16.8 mm  
(W × L) 3 mm × 25.8 mm  
(W × L) 11 mm × 1.7 mm  
(W × L) 9.5 mm × 1.7 mm  
(W × L) 3 mm × 3 mm  
L2  
stripline  
L3  
stripline  
L4  
stripline  
L5  
stripline  
L6  
stripline  
L7  
stripline  
L8  
stripline  
L9  
stripline  
L10  
L11  
L12  
L13  
L14  
R1  
stripline  
stripline  
stripline  
stripline  
(W × L) 12.7 mm × 1.7 mm  
(W × L) 13.5 mm × 2.1 mm  
stripline  
SMD resistor  
[1] American Technical Ceramics type 100B or capacitor of same quality.  
[2] American Technical Ceramics type 100A or capacitor of same quality.  
[3] American Technical Ceramics type 180R or capacitor of same quality.  
[4] Striplines are on a double copper-clad Taconic RF35 PCB (εr = 3.5); thickness = 0.76 mm.  
9397 750 14338  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
8 of 14  
 
 
 
 
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
9. Package outline  
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads  
SOT502A  
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT  
1
1
1
2
1
12.83  
12.57  
3.38  
3.12  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
34.16 9.91  
33.91 9.65  
0.15  
0.08  
27.94  
1.100  
0.25  
0.01  
0.51  
0.02  
mm  
0.505  
0.495  
0.133 0.067  
0.123 0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
1.345 0.390  
1.335 0.380  
0.006  
0.003  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
99-12-28  
03-01-10  
SOT502A  
Fig 8. Package outline SOT502A  
9397 750 14338  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
9 of 14  
 
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
Earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
UNIT  
1
1
1
2
2
12.83  
12.57  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
20.70 9.91  
20.45 9.65  
0.15  
0.08  
0.25  
mm  
0.505  
0.495  
0.067  
0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
0.815 0.390  
0.805 0.380  
0.006  
0.003  
0.010  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
99-12-28  
03-01-10  
SOT502B  
Fig 9. Package outline SOT502B  
9397 750 14338  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
10 of 14  
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
10. Abbreviations  
Table 11: Abbreviations  
Acronym  
3GPP  
CW  
Description  
Third Generation Partnership Project  
Continuous Wave  
CCDF  
DPCH  
IDq  
Complementary Cumulative Distribution Function  
Dedicated Physical Channels  
quiescent drain current  
LDMOS  
PAR  
Laterally Diffused Metal Oxide Semiconductor  
Peak-to-Average Ratio  
PEP  
Peak Envelope Power  
RF  
Radio Frequency  
TM1  
Test Model 1  
VSWR  
W-CDMA  
Voltage Standing Wave Ratio  
Wideband Code Division Multiple Access  
9397 750 14338  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
11 of 14  
 
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
11. Revision history  
Table 12: Revision history  
Document ID  
Release date Data sheet status  
Change notice Doc. number  
9397 750 14338  
Supersedes  
BLF4G22-100_4G22 20060110  
S-100_1  
Product data sheet  
-
-
9397 750 14338  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
12 of 14  
 
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
12. Data sheet status  
Level Data sheet status[1] Product status[2] [3]  
Definition  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips  
Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
URL http://www.semiconductors.philips.com.  
[3]  
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
13. Definitions  
Short-form specification — The data in a short-form specification is  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes in the products - including circuits, standard cells, and/or  
software - described or contained herein in order to improve design and/or  
performance. When the product is in full production (status ‘Production’),  
relevant changes will be communicated via a Customer Product/Process  
Change Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are  
free from patent, copyright, or mask work right infringement, unless otherwise  
specified.  
Limiting values definition — Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Application information — Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
makes no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
15. Trademarks  
Notice — All referenced brands, product names, service names and  
14. Disclaimers  
trademarks are the property of their respective owners.  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
16. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
9397 750 14338  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
13 of 14  
 
 
 
 
 
BLF4G22-100; BLF4G22S-100  
Philips Semiconductors  
UHF power LDMOS transistor  
17. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Application information. . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation. . . . . . . . . . 3  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Contact information . . . . . . . . . . . . . . . . . . . . 13  
3
4
5
6
7
7.1  
8
9
10  
11  
12  
13  
14  
15  
16  
© Koninklijke Philips Electronics N.V. 2006  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner. The information presented in this document does  
not form part of any quotation or contract, is believed to be accurate and reliable and may  
be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: 10 January 2006  
Document number: 9397 750 14338  
Published in The Netherlands  

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