BLF6G27-10 [NXP]
WiMAX power LDMOS transistor; WiMAX的功率LDMOS晶体管
| 型号： | BLF6G27-10 |
| 厂家： | 
NXP |
| 描述： | WiMAX power LDMOS transistor |
| 文件： | 总15页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
Rev. 01 — 4 February 2009
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp
ηD ACPR885k
(dB) (%) (dBc)
19
20 −49[2]
ACPR1980k
(dBc)
−64[2]
(MHz)
(V)
(W)
1-carrier N-CDMA[1]
2500 to 2700
28
2
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an IDq of 130 mA:
I Qualified up to a maximum VDS operation of 32 V
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation
I Internally matched for ease of use
I Low gold plating thickness on leads
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
1.3 Applications
I RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range.
2. Pinning information
Table 2.
Pin
BLF6G27-10 (SOT975B)
Pinning
Description
Simplified outline
Graphic symbol
1
2
3
drain
gate
1
1
[1]
source
2
3
sym112
2
1
BLF6G27-10G (SOT975C)
1
2
3
drain
gate
1
[1]
source
2
3
sym112
2
[1] Connected to flange.
3. Ordering information
Table 3.
Type number Package
Name Description
Ordering information
Version
BLF6G27-10
-
earless flanged ceramic package; 2 leads
earless flanged ceramic package; 2 leads
SOT975B
SOT975C
BLF6G27-10G -
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
2 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
drain current
-
65
−0.5 +13
V
-
3.5
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
225 °C
-
5. Thermal characteristics
Table 5.
Symbol
Rth(j-case)
Thermal characteristics
Parameter
thermal resistance from Tcase = 80 °C;
Conditions
Type
Typ
Unit
BLF6G27-10
BLF6G27-10G
4.0
4.0
K/W
K/W
junction to case
PL = 10 W (CW)
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C per section; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.18 mA 65
-
-
V
VGS(th)
IDSS
gate-source threshold voltage VDS = 10 V; ID = 18 mA
1.4
-
1.9
2.4
1.4
-
V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
-
µA
A
IDSX
VGS = VGS(th) + 3.75 V;
2.7
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 0.9 A
-
-
-
-
140
-
nA
S
forward transconductance
0.8
328
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 0.6 A
1256 mΩ
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
3.6
-
pF
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
3 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
7. Application information
Table 7.
Application information
Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh
codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz;
f1 = 2500 MHz; f2 = 2600 MHz; f3 = 2700 MHz; RF performance at VDS = 28 V; IDq = 130 mA;
T
case = 25 °C; unless otherwise specified; in a class-AB production circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
PL(AV)
Gp
average output power
power gain
-
2
-
-
-
-
W
PL(AV) = 2 W
PL(AV) = 2 W
PL(AV) = 2 W
17.5 19
dB
dB
%
RLin
ηD
input return loss
drain efficiency
-
−10
20
18
-
[1]
[1]
ACPR885k adjacent channel power ratio (885 kHz) PL(AV) = 2 W
ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) = 2 W
−49 −46 dBc
−64 −61 dBc
-
[1] Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G27-10 and BLF6G27-10G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 130 mA; PL = PL(1dB); f = 2700 MHz.
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;
FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB.
Table 8.
Frame structure
Frame contents
Modulation technique
QPSK1/2
Data length
3 bit
Zone 0 FCH 2 symbols × 4 subchannels
Zone 0 data 2 symbols × 26 subchannels
Zone 0 data 44 symbols × 30 subchannels
64QAM3/4
692 bit
64QAM3/4
10000 bit
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
4 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
7.2.2 Graphs
001aaj351
001aaj352
16
25
50
G
(dB)
η
D
(%)
p
EVM
(%)
23
40
12
G
p
21
19
17
15
30
20
10
0
8
4
η
D
0
10
−1
−1
1
10
10
1
10
P
(W)
P
(W)
L(AV)
L
VDS = 28 V; IDq = 130 mA; f = 2600 MHz.
VDS = 28 V; IDq = 130 mA; f = 2600 MHz.
Fig 1. EVM as a function of load power;
typical values
Fig 2. Power gain and drain efficiency as function of
average load power; typical values
001aaj353
−20
ACPR
(dBc)
ACPR
10M
−30
−40
−50
−60
ACPR
ACPR
20M
30M
−1
10
1
10
P
(W)
L(AV)
VDS = 28 V; IDq = 130 mA; f = 2600 MHz.
Fig 3. Adjacent channel power ratio as a function of average load power; typical values
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
5 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
7.3 Single carrier NA IS-95 broadband performance at 2 W average
7.3.1 Graphs
001aaj354
001aaj355
25
23
−45
(2)
(1)
G
(dB)
η
(%)
ACPR
(dBc)
p
D
23
22
−50
−55
−60
−65
−70
ACPR
885k
η
D
21
19
17
15
21
20
19
18
(1)
(2)
G
p
ACPR
ACPR
1500k
1980k
2540
(2)
(1)
2500
2540
2580
2620
2660
2700
2500
2580
2620
2660
2700
f (MHz)
f (MHz)
VDS = 28 V; IDq = 130 mA; Single Carrier IS-95;
PAR = 9.7 dB at 0.01 % probability.
VDS = 28 V; IDq = 130 mA; single carrier IS-95;
PAR = 9.7 dB at .01 % probability.
(1) Low frequency component
(2) High frequency component
Fig 4. Power gain and drain efficiency as function of
frequency; typical values
Fig 5. Adjacent channel power ratio as a function of
frequency; typical values
001aaj356
001aaj357
24
50
−35
G
(dB)
η
D
(%)
p
ACPR
(dBc)
22
40
−45
G
p
(2)
(1)
20
18
16
14
30
20
10
0
ACPR
−55
−65
−75
885k
ACPR
ACPR
1500k
(1)
(2)
1980k
η
D
(2)
(1)
−1
−1
10
1
10
10
1
10
P
(W)
P
(W)
L(AV)
L(AV)
VDS = 28 V; IDq = 130 mA; f = 2600 MHz;
VDS = 28 V; IDq = 130 mA; f = 2600 MHz;
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 6. Power gain and drain efficiency as function of
load power; typical values
Fig 7. Adjacent channel power ratio as a function of
load power; typical values
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
6 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
001aaj358
001aaj359
25
0.16
G
(dB)
p
P
(W)
i
23
(2)
(1)
(3)
0.12
(3)
(2)
(1)
21
19
17
15
0.08
0.04
0
−1
−1
10
1
10
10
1
10
P
L
(W)
P (W)
L
VDS = 28 V; IDq = 130 mA; single carrier IS-95;
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
VDS = 28 V; IDq = 130 mA; single carrier IS-95;
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 8. Power gain as a function of load power;
typical values
Fig 9. Input power as a function of load power;
typical values
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
7 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
8. Test information
L1
C8
R2
C5
C6
C3
C2
R1
C1
C7
C4
BLF6G27-10
Input Rev 2
NXP
BLF6G27-10
Output Rev 2
NXP
PCB1
PCB2
001aaj360
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and
thickness = 0.30 mm.
See Table 9 for list of components.
Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
8 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
L1
C8
R2
C2
C5
C6
C3
R1
C1
C7
C4
BLF6G27-10G
Input Rev 1
NXP
BLF6G27-10G
Output Rev 1
NXP
PCB1
PCB2
001aaj361
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and
thickness = 0.76 mm.
See Table 9 for list of components.
Fig 11. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10G
Table 9.
List of components
For test circuit, see Figure 10 and Figure 11.
Component
Description
Value
Remarks
ATC 100A
TDK
C1, C3, C5, C7
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
22 pF
C2
1.5 µF
1.6 pF
10 µF; 50 V
220 µF; 63 V
-
C4
ATC 100A
TDK
C6
C8
Elco
L1
ferrite SMD bead
Ferroxcube bead
Thin film
R1, R2
SMD resistor
8.2 Ω
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
9 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
Table 10. Measured test circuit impedances
f
Zi
Zo
(GHz)
BLF6G27-10
3.40
(Ω)
(Ω)
5.32 - j8.61
4.85 - j8.09
4.40 - j7.55
3.98 - j7.00
3.59 - j6.43
9.46 - j6.99
9.44 - j7.41
9.32 - j7.86
9.10 - j8.31
8.77 - j8.75
3.45
3.50
3.55
3.60
BLF6G27-10G
3.40
5.67 - j13.62
5.06 - j12.79
4.55 - j11.98
4.10 - j11.19
3.71 - j10.43
10.70 - j7.38
10.61 - j8.00
10.38 - j8.63
10.00 - j9.24
9.49 - j9.79
3.45
3.50
3.55
3.60
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
10 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
9. Package outline
Earless flanged ceramic package; 2 leads
SOT975B
D
A
F
U
1
D
1
A
c
1
E
1
U
2
H
E
2
M
M
b
w
1
A
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
Q
U
U
w
1
1
1
1
2
3.63 3.38 0.23 6.55 6.93 6.55 6.93 0.23 11.05 0.76 6.43 6.43
3.05 3.23 0.18 6.78 6.40 6.78 0.18 0.66 6.27
6.27
0.51
0.02
6.40
10.80
0.143 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.435 0.030 0.253 0.253
0.120 0.127 0.007
inches
0.267 0.252 0.267 0.007
0.026 0.247
0.425 0.247
0.252
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
06-11-03
07-09-28
SOT975B
Fig 12. Package outline SOT975B
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
11 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
Earless flanged ceramic package; 2 leads
SOT975C
D
A
F
U
1
D
1
A
L
p
1
L
E
1
U
2
H
E
2
α
M M
A
b
w
1
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
H
L
L
Q
U
U
w
1
α
1
1
p
1
2
3.63 3.38 0.23 6.55 6.93 6.55 6.93 0.23 10.29
3.05 3.23 0.18
1.02 +0.05 6.43 6.43
0.51 6.27 6.27
7°
0°
1.65
0.065
0.51
6.78 6.40 6.78 0.18
6.40
10.03
−0.05
0.040 +0.002 0.253 0.253
0.143 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.405
0.120 0.127 0.007
7°
0°
inches
0.020
0.267 0.252 0.267 0.007
0.020
0.247 0.247
0.252
0.395
−0.002
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
08-05-20
08-07-10
SOT975C
Fig 13. Package outline SOT975C
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
12 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
10. Abbreviations
Table 11. Abbreviations
Acronym
CCDF
CW
Description
Complementary Cumulative Distribution Function
Continuous Wave
EVM
Error Vector Magnitude
FCH
Frame control Header
FFT
Fast Fourier Transform
IBW
Instantaneous BandWidth
IS-95
LDMOS
NA
Interim Standard 95
Laterally Diffused Metal-Oxide Semiconductor
North American
N-CDMA
PAR
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Partial Usage of SubChannels
Radio Frequency
PUSC
RF
SMD
Surface Mounted Device
VSWR
WCS
WiMAX
Voltage Standing-Wave Ratio
Wireless Communications Service
Worldwide Interoperability for Microwave Access
11. Revision history
Table 12. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF6G27-10_BLF6G27-10G_1
20090204
Product data sheet
-
-
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
13 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
14 of 15
BLF6G27-10; BLF6G27-10G
NXP Semiconductors
WiMAX power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Application information. . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation. . . . . . . . . . 4
NXP WiMAX signal. . . . . . . . . . . . . . . . . . . . . . 4
WiMAX signal description. . . . . . . . . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Single carrier NA IS-95 broadband
7.1
7.2
7.2.1
7.2.2
7.3
performance at 2 W average . . . . . . . . . . . . . . 6
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.3.1
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 February 2009
Document identifier: BLF6G27-10_BLF6G27-10G_1
相关型号：
BLF6G27-100,112
WiMAX power LDMOS transistor, SOT502A Package, Standard Marking, IC'S Tube - DSC Bulk Pack
NXP
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