BLF7G20L-90P,112 [NXP]
BLF7G20L-90P;型号: | BLF7G20L-90P,112 |
厂家: | NXP |
描述: | BLF7G20L-90P 局域网 放大器 CD 晶体管 |
文件: | 总15页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BLF7G20L-90P;
BLF7G20LS-90P
Power LDMOS transistor
Rev. 2 — 20 October 2011
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to
1880 MHz and 2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV)
Gp
D
ACPR400k
ACPR600k
EVMrms
(MHz)
(mA) (V)
(W)
84
(dB) (%) (dBc)
(dBc)
-
(%)
-
CW
1805 to 1880
1805 to 1880
550
550
28
28
19
54
-
GSM EDGE
40
19.5 41
61
74
2.5
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1427 MHz to1525 MHz, 1805 MHz to 1880 MHz
and 2110 MHz to 2170 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the frequency
bands of 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to
2170 MHz.
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF7G20L-90P (SOT1121A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
3
5
4
5
[1]
2
sym117
BLF7G20LS-90P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
2
1
5
3
5
4
[1]
3
4
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF7G20L-90P
BLF7G20LS-90P
-
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
SOT1121A
-
earless flanged LDMOST ceramic package; 4 leads
SOT1121B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
0.5 +13
V
-
18
A
Tstg
Tj
storage temperature
junction temperature
65
+150 C
200 C
-
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
2 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 90 W
0.49 K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA
Min Typ
65
1.5 1.9
Max Unit
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 50 mA
VGS = 0 V; VDS = 28 V
2.3
2
V
-
-
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
8.2 9.5
-
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 2.5 A
-
-
-
-
200 nA
forward transconductance
3.8
0.28
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 1.75 A
7. Test information
Table 7.
Application information
f = 1805 MHz to 1880 MHz; RF performance at VDS = 28 V; IDq = 550 mA; Tcase = 25 C;
2 sections combined unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ
Max Unit
Mode of operation: GSM EDGE; PL(AV) = 40 W
Gp
power gain
18.3 19.5
-
dB
dB
%
RLin
D
input return loss
drain efficiency
-
15
41
8
-
38
-
ACPR400k adjacent channel power ratio (400 kHz)
ACPR600k adjacent channel power ratio (600 kHz)
61
74
2.5
8
58
dBc
-
70.5 dBc
EVMrms
EVMM
RMS EDGE signal distortion error
peak EDGE signal distortion error
-
3.8
%
%
-
12.5
Mode of operation: CW; PL(AV) = 84 W
Gp
power gain
17.8 19
51 54
-
-
dB
%
D
drain efficiency
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
3 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF7G20L-90P and BLF7G20LS-90P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 550 mA; PL = 90 W (CW), f = 1805 MHz,
VDS = 28 V; IDq = 380 mA; PL = 40 W (CW, half device), f = 2110 MHz,
VDS = 28 V; IDq = 380 mA; PL = 55 W (CW pulse, 10 %, 100 s, halve device),
f = 1427 MHz.
7.2 One-tone CW
001aal867
22
70
G
η
D
p
(dB)
21
(%)
60
20
19
18
17
16
15
50
40
30
20
10
0
G
p
η
D
0
20
40
60
80
100
(W)
P
L
VDS = 28 V; IDq = 550 mA; f = 1880 MHz.
Fig 1. One-tone CW power gain and drain efficiency as function of load power;
typical values
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
4 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
7.3 Two-tone CW
001aal868
001aal869
22
p
70
η
0
G
D
(dB)
21
(%)
60
IMD
(dBc)
IMD3
IMD5
IMD7
−20
20
19
18
17
16
15
50
40
30
20
10
0
G
p
−40
−60
−80
η
D
0
10
20
30
40
50
60
(W)
70
0
10
20
30
40
50
60
P (W)
L
70
P
L
VDS = 28 V; IDq = 550 mA; f1 = 1879.95 MHz;
f2 = 1880.05 MHz.
VDS = 28 V; IDq = 550 mA; f1 = 1879.95 MHz;
f2 = 1880.05 MHz.
Fig 2. Two-tone CW power gain and drain efficiency
as function of load power; typical values
Fig 3. Two-tone CW intermodulation distortion as a
function of load power; typical values
7.4 GSM EDGE
001aal870
001aal871
21
p
70
η
−50
G
D
(dB)
20
(%)
60
ACPR
(dBc)
G
p
19
18
17
16
15
14
50
40
30
20
10
0
−60
ACPR
ACPR
400k
−70
−80
600k
η
D
0
10
20
30
40
50
60
(W)
70
0
10
20
30
40
50
60
P (W)
L
70
P
L
VDS = 28 V; IDq = 550 mA; f = 1880 MHz.
VDS = 28 V; IDq = 550 mA; f = 1880 MHz.
Fig 4. GSM EDGE power gain and drain efficiency as
function of load power; typical values
Fig 5. GSM EDGE ACPR at 400 kHz and at 600 kHz as
function of load power; typical values
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
5 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
001aal872
25
EVM
(%)
20
15
10
5
EVM
M
EVM
rms
0
0
10
20
30
40
50
60
(W)
70
P
L
VDS = 28 V; IDq = 550 mA; f = 1880 MHz.
Fig 6. GSM EDGE RMS EDGE and peak EDGE as function of load power; typical values
7.5 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
001aal873
001aal874
21
60
−30
ACPR
(dBc)
ACPR
885k
G
(dB)
η
D
p
(%)
G
−40
−50
−60
−70
−80
p
19
40
ACPR
1980k
17
15
20
η
D
0
0
16
32
48
0
16
32
48
P
(W)
P (W)
L
L
VDS = 28 V; IDq = 600 mA; f = 1880 MHz.
VDS = 28 V; IDq = 600 mA; f = 1880 MHz.
Fig 7. Single carrier IS-95 power gain and drain
efficiency as function of load power;
typical values
Fig 8. Single carrier IS-95 ACPR at 885 kHz and at
1980 kHz as function of load power;
typical values
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
6 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
001aal875
11
PAR
10
9
8
7
6
5
4
0
16
32
48
P
(W)
L
VDS = 28 V; IDq = 600 mA; f = 1880 MHz.
Fig 9. Single carrier IS-95 peak-to-average power ratio as a function of load power;
typical values
7.6 Single carrier W-CDMA
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
001aal876
001aal877
21
60
−20
ACPR
5M
G
(dB)
η
ACPR
(dBc)
p
D
(%)
G
p
19
40
−36
−52
−68
ACPR
10M
17
15
20
η
D
0
0
10
20
30
40
50
60
(W)
70
0
10
20
30
40
50
60
P (W)
L
70
P
L
VDS = 28 V; IDq = 600 mA; f = 1880 MHz.
VDS = 28 V; IDq = 600 mA; f = 1880 MHz.
Fig 10. Single carrier W-CDMA power gain and drain
efficiency as function of load power;
typical values
Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at
10 MHz as function of load power;
typical values
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
7 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
7.7 Test circuit
Table 8.
List of components
For test circuit see Figure 12.
Component
C1, C2, C3
C4, C5
Description
Value
Remarks
[1]
[2]
[3]
[2]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
24 pF
4.7 F
11 pF
C6, C7, C8
C9, C10
C11
10 F
470 F; 63 V
12
R1, R2
SMD resistor
Philips 1206
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] TDK or capacitor of same quality.
[3] American Technical Ceramics type 100B or capacitor of same quality.
C11
C9
C4
C2
C6
R1
C8
C1
BLF7G20L-90P OUTPUT REV 3
BLF7G20L-90P INPUT REV 3
R2
C7
C5
C3
C10
001aal878
Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; thickness = 0.76 mm; thickness copper plating = 35 m.
See Table 8 for a list of components.
Fig 12. Component layout for class-AB production test circuit
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
8 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
7.8 Impedance information
Table 9.
Typical impedance
Typical values valid for both section in parallel unless otherwise specified.
f
ZS
ZL
MHz
1800
1840
1880
1.0 j3.3
1.2 j3.3
1.1 j3.4
2.8 j2.7
2.8 j2.5
2.7 j2.4
gate
drain
Z
Z
L
S
001aal831
Fig 13. Definition of transistor impedance
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
9 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
SOT1121A
D
A
F
D
U
1
B
C
1
q
H
1
c
1
2
p
U
2
E
1
H
E
5
A
w
1
A
B
3
4
b
w
2
C
Q
e
0
5
10 mm
p
scale
Dimensions
(1)
(2)
Unit
A
b
c
D
D
e
E
E
1
F
H
H
1
Q
q
U
1
U
w
1
w
2
1
2
max 4.75 3.94 0.18 20.02 19.96
mm nom
9.53 9.53 1.14 19.94 12.83 3.38 1.70
34.16 9.91
8.89
27.94
1.1
0.25 0.51
0.01 0.02
min 3.45 3.68 0.10 19.61 19.66
9.27 9.27 0.89 18.92 12.57 3.12 1.45
0.375 0.375 0.045 0.785 0.505 0.133 0.067
33.91 9.65
1.345 0.39
max 0.187 0.155 0.007 0.788 0.786
inches nom
min 0.136 0.145 0.004 0.772 0.774
0.35
0.365 0.365 0.035 0.745 0.495 0.123 0.057
1.335 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121a_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
10-02-02
SOT1121A
Fig 14. Package outline SOT1121A
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
10 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 4 leads
SOT1121B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
U
2
E
1
H
E
3
4
b
Q
w
3
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
e
E
E
1
F
H
H
1
Q
U
1
U
w
w
3
2
2
max 4.75 3.94 0.18 20.02 19.96
mm nom
9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91
8.89
0.51 0.25
0.02 0.01
min 3.45 3.68 0.08 19.61 19.66
9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65
0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39
max 0.187 0.155 0.007 0.788 0.786
inches nom
min 0.136 0.145 0.003 0.772 0.774
0.35
0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
09-12-14
SOT1121B
Fig 15. Package outline SOT1121B
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
11 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
9. Abbreviations
Table 10. Abbreviations
Acronym
Description
3GPP
CW
3rd Generation Partnership Project
Continuous Wave
CCDF
DPCH
EDGE
ESD
Complementary Cumulative Distribution Function
Dedicated Physical Channel
Enhanced Data rates for GSM Evolution
ElectroStatic Discharge
GSM
Global System for Mobile Communications
Interim Standard 95
IS-95
LDMOS
LDMOST
PAR
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
RF
SMD
Surface Mounted Device
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
10. Revision history
Table 11. Revision history
Document ID
Release date
Data sheet status
Change notice Supersedes
BLF7G20L-90P_7G20LS-90P v.2 20111020
Product data sheet
-
BLF7G20L-90P_7G20LS-
90P v.1
Modifications:
• Section 1.1 on page 1: General description changed
• Section 1.2 on page 1: Designed for broadband operation changed
• Section 1.3 on page 1: Description changed
• Section 7.1 on page 4: Conditions changed
BLF7G20L-90P_7G20LS-90P v.1 20100428
Product data sheet
-
-
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
12 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
11.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
11.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
13 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF7G20L-90P_7G20LS-90P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
14 of 15
BLF7G20L-90P; BLF7G20LS-90P
NXP Semiconductors
Power LDMOS transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5
GSM EDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Single carrier IS-95. . . . . . . . . . . . . . . . . . . . . . 6
Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Impedance information. . . . . . . . . . . . . . . . . . . 9
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 October 2011
Document identifier: BLF7G20L-90P_7G20LS-90P
相关型号:
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