BLS2731-50 [NXP]
Microwave power transistor; 微波功率晶体管
| 型号： | BLS2731-50 |
| 厂家： | 
NXP |
| 描述： | Microwave power transistor |
| 文件： | 总8页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLS2731-50
Microwave power transistor
Product specification
1998 Jan 30
Supersedes data of 1997 Nov 05
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-50
FEATURES
PINNING - SOT422A
PIN
• Suitable for short and medium pulse applications
DESCRIPTION
• Internal input and output matching networks for an easy
circuit design
1
2
3
collector
emitter
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
base; connected to flange
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
1
handbook, halfpage
APPLICATIONS
• Common base class-C pulsed power amplifiers for radar
3
3
applications in the 2.7 to 3.1 GHz band.
2
MBK051
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common base class-C test circuit.
f
VCB
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(GHz)
Pulsed, class-C
2.7 to 3.1
40
60
typ. 9
typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 30
2
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
CONDITIONS
MIN.
MAX.
75
UNIT
VCBO
VCES
VEBO
ICM
open emitter
RBE = 0
−
−
−
−
−
V
75
V
open collector
2
V
peak collector current
total power dissipation
storage temperature
tp ≤ 100 µs; δ ≤ 10%
6
A
Ptot
tp = 100 µs; δ = 10%; Tmb = 25 °C
80
W
°C
°C
°C
Tstg
Tj
−65
−
+200
200
235
operating junction temperature
soldering temperature
Tsld
up to 0.2 mm from ceramic cap;
−
t ≤ 10 s
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
tp = 100 µs; δ = 10%; note 1
VALUE UNIT
Zth j-h
thermal impedance from junction to heatsink
0.3
K/W
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
75
TYP.
MAX.
UNIT
V(BR)CBO
V(BR)CES
ICBO
collector-base breakdown voltage
IC = 15 mA; open emitter
−
−
−
−
−
−
−
V
collector-emitter breakdown voltage IC = 15 mA; VBE = 0
75
−
−
V
collector leakage current
collector leakage current
emitter leakage current
DC current gain
VCB = 40 V; IE = 0
VCE = 40 V; VBE = 0
VEB = 1.5 V; IC = 0
VCB = 5 V; IC = 1.5 A
1.5
3
mA
mA
mA
ICES
−
IEBO
−
0.3
−
hFE
40
−
Cc
collector capacitance (die only)
VCE = 1 V; IE = ie = 0;
f = 1 MHz
30
−
pF
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common-base test circuit.
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(GHz)
Class-C; tp = 100 µs; δ = 10%
2.7 to 3.1
40
≥50
≥8
≥35
typ. 60
typ. 9
typ. 40
1998 Jan 30
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-50
MGM533
(3)
MGM534
12
60
handbook, halfpage
handbook, halfpage
(2)
(1)
P
L
(W)
G
p
(dB)
8
40
4
20
0
2.6
0
0
2.8
3
3.2
2
4
6
8
10
f (GHz)
P
(W)
D
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 2.7 GHz.
VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%.
(3) f = 2.9 GHz.
Fig.2 Load power as a function of drive power;
typical values.
Fig.3 Power gain as function of frequency;
typical values.
MGM535
MGM536
16
12
handbook, halfpage
handbook, halfpage
Z
L
Z
i
(Ω)
(Ω)
8
12
x
r
i
R
L
4
0
i
8
4
0
−4
X
L
−8
2.6
2.6
2.8
3
3.2
2.8
3
3.2
f (GHz)
f (GHz)
VCB = 40 V; class-C; PL = 50 W.
VCB = 40 V; class-C; PL = 50 W.
Fig.4 Input impedance as function of frequency
(series components); typical values.
Fig.5 Load impedance as function of frequency
(series components); typical values.
1998 Jan 30
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-50
30
30
40
C1
C2
C3
input
output
C4
MGM537
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr = 2.2), thickness 0.38 mm.
The other side is unetched and serves as a ground plane.
C1 = ATC 200A 10 nF
C2 = ATC 100A 10 pF
C3 = ATC 700A 150 pF
C4 = Tekelec trimmer 37281SL 0.4 to 2.5 pF.
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
1998 Jan 30
5
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-50
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
SOT422A
D
A
F
3
D
1
U
1
B
q
c
C
1
p
H
U
E
E
2
1
w
M
A
B
1
A
2
w
b
M
C
Q
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D
E
E
F
H
p
Q
q
U
U
w
w
2
1
1
1
2
1
5.21
4.95
0.13
0.08
5.72
4.83
9.93 10.29 8.76 10.29
9.68 10.03 8.51 10.03
1.58
1.47
21.61
21.08
3.43
3.18
3.35
2.92
22.99 9.91
22.73 9.65
mm
16.51
0.65
0.25
0.01
0.76
0.03
0.205 0.005
0.195 0.003
0.225
0.190
0.391 0.405 0.345 0.405 0.062
0.381 0.395 0.335 0.395 0.058
0.89
0.83
0.135 0.132
0.125 0.115
0.905 0.390
0.895 0.380
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT422A
97-12-24
1998 Jan 30
6
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-50
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 30
7
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© Philips Electronics N.V. 1998
SCA57
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Printed in The Netherlands
125108/00/03/pp8
Date of release: 1998 Jan 30
Document order number: 9397 750 03233
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