BLT53 [NXP]
UHF power transistor; 超高频功率晶体管
| 型号： | BLT53 |
| 厂家： | 
NXP |
| 描述： | UHF power transistor |
| 文件： | 总11页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLT53
UHF power transistor
May 1991
Product specification
Philips Semiconductors
Product specification
UHF power transistor
BLT53
FEATURES
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common emitter test circuit.
• Emitter-ballasting resistors for an
optimum temperature profile
MODE OF
OPERATION
f
VCE
(V)
PL
(W)
Gp
(dB)
ηc
(%)
(MHz)
• Gold metallization ensures
excellent reliability
c.w. class-B
470
7.5
8
> 6
> 60
• Withstands full load mismatch.
WARNING
Product and environmental safety - toxic materials
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT122D
studless envelope with a ceramic cap.
It is designed for common emitter,
class-B operation in portable radio
transmitters in the 470 MHz
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
communications band. All leads are
isolated from the mounting flange.
PIN CONFIGURATION
PINNING - SOT122D
PIN
1
DESCRIPTION
collector
alfpage
4
2
emitter
base
c
1
3
3
handbook, halfpage
4
emitter
b
e
MBB012
2
MSB055
Fig.1 Simplified outline and symbol.
May 1991
2
Philips Semiconductors
Product specification
UHF power transistor
BLT53
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
−
−
−
−
−
V
V
V
A
A
VCEO
VEBO
IC, IC(AV)
ICM
collector-emitter voltage
emitter-base voltage
collector current
open base
10
3
open collector
DC or average value
2.5
7.5
collector current
peak value
f > 1 MHz
Ptot
total power dissipation
RF operation;
−
35.5
W
Tmb = 25 °C
Tstg
Tj
storage temperature range
−65
150
200
°C
°C
junction operating temperature
−
MCD192
MCD193
10
50
handbook, halfpage
handbook, halfpage
P
tot
(3)
(2)
(W)
I
C
40
(A)
o
T
= 25 C
mb
o
70
C
30
20
10
0
(1)
1
−1
10
2
1
10
10
0
40
80
120
T
160
( C)
V
(V)
o
CE
mb
(1) Continuous DC operation.
(2) Continuous RF operation (f > 1 MHz).
(3) Short time operation during mismatch (f > 1 MHz).
Fig.2 DC SOAR.
Fig.3 Power derating curve.
THERMAL RESISTANCE
SYMBOL
PARAMETER
from junction to mounting base
CONDITIONS
Ptot = 35.5 W;
Tmb = 25 °C
MAX.
4.9
UNIT
K/W
Rth j-mb(RF)
May 1991
3
Philips Semiconductors
Product specification
UHF power transistor
BLT53
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
V(BR)CBO
PARAMETER
CONDITIONS
MIN.
20
TYP.
MAX.
UNIT
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
open emitter;
IC = 20 mA
−
−
−
−
−
−
V
V(BR)CEO
V(BR)EBO
ICES
open base;
IC = 40 mA
10
3
−
−
1
−
−
−
V
open collector;
IE = 4 mA
V
VBE = 0;
VCE = 10 V
−
mA
hFE
VCE = 5 V;
IC = 1.2 A
25
−
fT
transition frequency
VCE = 7.5 V;
IE = 1.6 A
3.9
24
GHz
pF
Cc
collector capacitance
VCB = 7.5 V;
IE = Ie = 0;
f = 1 MHz
−
Cre
feedback capacitance
VCE = 7.5 V;
IC = 0;
f = 1 MHz
−
−
17
−
−
pF
pF
Cc-mb
collector-mounting base capacitance
f = 1 MHz
1.2
MCD194
MCD195
80
50
handbook, halfpage
handbook, halfpage
C
c
h
FE
(pF)
40
60
40
20
30
20
10
0
0
0
0
2
4
6
4
8
12
I
(A)
V
(V)
CB
C
VCE = 5 V.
IE = ie = 0; f = 1 MHz.
Fig.4 DC current gain as a function of collector
current, typical values.
Fig.5 Collector capacitance as a function of
collector-base voltage, typical values.
May 1991
4
Philips Semiconductors
Product specification
UHF power transistor
BLT53
MCD196
5
handbook, halfpage
f
T
(GHz)
4
3
2
1
0
0
2
4
6
I
(A)
E
VCB = 7.5 V.
Fig.6 Transition frequency as a function of emitter
current, typical values.
May 1991
5
Philips Semiconductors
Product specification
UHF power transistor
BLT53
APPLICATION INFORMATION
RF performance at Tmb = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
f
VCE
(V)
PL
(W)
Gp
(dB)
ηc
(%)
(MHz)
c.w. class-B
470
7.5
8
> 6
> 60
typ. 6.8
typ. 65
MCD197
MCD198
70
10
12
handbook, halfpage
handbook, halfpage
η
G
p
η
(%)
P
L
(W)
(dB)
8
60
50
40
G
p
8
6
4
2
4
30
20
0
0
0
0
1
2
3
4
4
8
12
P
(W)
P
(W)
L
D
Class-B operation; VCE = 7.5 V; f = 470 MHz.
Class-B operation; VCE = 7.5 V; f = 470 MHz.
Fig.7 Gain and efficiency as functions of load
power, typical values.
Fig.8 Load power as a function of drive power,
typical values.
Ruggedness in class-B operation
The BLT53 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 9 V, and
f = 470 MHz.
May 1991
6
Philips Semiconductors
Product specification
UHF power transistor
BLT53
C2
C1
C7
C8
L4
L1
input
output
T.U.T.
C4
Z
= 50 Ω
L3
Z = 50 Ω
L
R1
L2
S
C3
C5
C6
R2
MBH107
L5
+V
CC
Fig.9 Class-B test circuit at f = 470 MHz.
List of components (see test circuit)
COMPONENT
DESCRIPTION
VALUE
2 to 9 pF
DIMENSIONS
CATALOGUE NO.
C1, C2, C7, C8
film dielectric trimmer
multilayer ceramic chip capacitor
feed-through capacitor
polyester capacitor
2222 809 09002
C3, C4
C5
15 pF
100 pF
33 nF
44 Ω
C6
L1
stripline (note 1)
41.1 mm × 5 mm
L2
13 turns closely wound enamelled
0.5 mm copper wire
320 nH
int. dia. 4 mm
L3
2 turns enamelled 1 mm copper wire
int. dia. 4 mm;
pitch 1.5 mm;
leads 2 × 5 mm
L4
L5
stripline (note 1)
44 Ω
52.7 mm × 5 mm
grade 3B1 Ferroxcube wideband HF
choke
4312 020 36640
R1
R2
0.25 W carbon resistor
0.25 W carbon resistor
1 Ω, 5%
10 Ω, 5%
Note
1. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.74);
thickness 1⁄16 inch.
May 1991
7
Philips Semiconductors
Product specification
UHF power transistor
BLT53
146
41.1
52.7
rivet (4x)
47
L2
input
50 Ω
output
50 Ω
R1
C3
C1
C7
L1
L4
C2
C6
C4
C8
L3
R2
C5
V
CC
L5
MBH108
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is
unetched and serves as a ground plane. Earth connections from the component side to the ground plane are
made by means of hollow rivets.
Dimensions in mm.
Fig.10 Component layout for 470 MHz class-B test circuit.
May 1991
8
Philips Semiconductors
Product specification
UHF power transistor
BLT53
MCD199
MCD200
3
4
handbook, halfpage
handbook, halfpage
r
i
R
L
Z
L
(Ω)
Z
i
(Ω)
2
2
0
1
X
x
i
L
−2
0
400
−4
400
440
480
520
440
480
520
f (MHz)
f (MHz)
Class-B operation; VCE = 7.5 V; PL = 8 W.
Class-B operation; VCE = 7.5 V; PL = 8 W.
Fig.11 Input impedance (series components) as a
function of frequency, typical values.
Fig.12 Load impedance (series components) as a
function of frequency, typical values.
MCD201
10
handbook, halfpage
G
p
(dB)
8
6
4
handbook, halfpage
Z
i
2
0
Z
MBA451
L
400
440
480
520
f (MHz)
Class-B operation; VCE = 7.5 V; PL = 8 W.
Fig.13 Definition of transistor impedance.
Fig.14 Power gain as a function of frequency,
typical values.
May 1991
9
Philips Semiconductors
Product specification
UHF power transistor
BLT53
PACKAGE OUTLINE
Studless ceramic package; 4 leads
SOT122D
D
A
Q
c
D
2
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
D
UNIT
A
b
c
D
H
L
Q
α
2
1.58
1.27
4.17
3.27
5.85
5.58
0.18
0.14
7.50
7.23
7.24
6.98
27.56 9.91
25.78 9.14
mm
90°
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-04-18
SOT122D
May 1991
10
Philips Semiconductors
Product specification
UHF power transistor
BLT53
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
May 1991
11
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