BLT61 [NXP]

UHF power transistor; 超高频功率晶体管
BLT61
型号: BLT61
厂家: NXP    NXP
描述:

UHF power transistor
超高频功率晶体管

晶体 小信号双极晶体管 射频小信号双极晶体管 光电二极管 放大器
文件: 总8页 (文件大小:58K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BLT61  
UHF power transistor  
1998 Jan 28  
Preliminary specification  
Supersedes data of 1996 Feb 05  
Philips Semiconductors  
Preliminary specification  
UHF power transistor  
BLT61  
FEATURES  
PINNING  
PIN  
High efficiency  
DESCRIPTION  
High gain  
1, 8  
2, 4, 5, 7  
3, 6  
base  
Internal pre-matched input  
Low supply voltage.  
emitter  
collector  
APPLICATIONS  
Hand-held radio equipment in common emitter class-AB  
operation for 900 MHz communication systems.  
5
8
1
k, halfpage  
DESCRIPTION  
NPN silicon planar epitaxial power transistor encapsulated  
in a SOT96-1(SO8) package.  
4
Top view  
MBK187  
Fig.1 Simplified outline (SOT96-1; SO8).  
QUICK REFERENCE DATA  
RF performance at Ts 60 °C in a common emitter test circuit.  
f
VCE  
(V)  
PL  
(W)  
Gp  
(dB)  
ηC  
(%)  
MODE OF OPERATION  
(MHz)  
CW, class-AB  
900  
3.6  
1.2  
10  
50  
typ. 11.5  
typ. 63  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
open emitter  
MIN.  
MAX.  
14  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current  
V
open base  
7
V
open collector  
3
V
0.8  
4
A
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
operating junction temperature  
Ts = 60 °C; note 1  
W
°C  
°C  
65  
+150  
175  
Note  
1. Ts is the temperature at the soldering point of the collector pin.  
1998 Jan 28  
2
Philips Semiconductors  
Preliminary specification  
UHF power transistor  
BLT61  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
MAX.  
UNIT  
Rth j-s  
thermal resistance from junction to soldering point Ptot = 4 W; Ts = 60 °C; note 1  
29  
K/W  
Note  
1. Ts is the temperature at the soldering point of the collector pin.  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V(BR)CBO collector-base breakdown voltage  
open emitter; IC = 5 mA  
14  
7
V
V
V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA  
V(BR)EBO emitter-base breakdown voltage  
open collector; IE = 1 mA  
VBE = 0; VCE = 5 V  
3
ICES  
hFE  
Cc  
collector leakage current  
DC current gain  
0.01  
130  
tbf  
mA  
IC = 0.2 A; VCE = 5 V  
45  
collector capacitance  
feedback capacitance  
IE = ie = 0; VCB = 3.6 V; f = 1 MHz  
IC = 0; VCE = 3.6 V; f = 1 MHz  
pF  
pF  
Cre  
tbf  
MGM488  
1
handbook, halfpage  
I
C
(A)  
1  
10  
1
10  
V
(V)  
CE  
Ts = 115 °C.  
Fig.2 DC SOAR.  
1998 Jan 28  
3
Philips Semiconductors  
Preliminary specification  
UHF power transistor  
BLT61  
APPLICATION INFORMATION  
RF performance at Ts 60 °C in a common-emitter test circuit.  
f
VCE  
(V)  
ICQ  
(mA)  
PL  
(W)  
Gp  
(dB)  
ηC  
(%)  
MODE OF OPERATION  
(MHz)  
CW, class-AB  
900  
3.6  
0.1  
1.2  
10  
50  
typ. 11.5  
typ. 63  
Ruggedness in class-AB operation  
The BLT61 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases at  
f = 900 MHz; VCE = 5 V; ICQ = 0.1 mA; PL = 1.45 W; and Ts = 60 °C.  
MGM489  
MGM490  
1.6  
16  
80  
handbook, halfpage  
handbook, halfpage  
P
η
G
p
L
C
(W)  
1.2  
(%)  
(dB)  
12  
60  
G
p
η
C
0.8  
0.4  
40  
20  
0
8
4
0
0
0
0
40  
80  
120  
160  
P
200  
(mW)  
0.4  
0.8  
1.2  
1.6  
P
(W)  
L
D
f = 900 MHz; VCE = 3.6 V; ICQ = 0.1 mA.  
f = 900 MHz; VCE = 3.6 V; ICQ = 0.1 mA; tuned at PL = 1.2 W.  
Fig.3 Power gain and collector efficiency as a  
function of load power; typical values.  
Fig.4 Load power as a function of drive power;  
typical values.  
1998 Jan 28  
4
Philips Semiconductors  
Preliminary specification  
UHF power transistor  
BLT61  
PACKAGE OUTLINE  
SO8: plastic small outline package; 8 leads; body width 3.9 mm  
SOT96-1  
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
4
e
w
M
detail X  
b
p
0
2.5  
5 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(2)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
5.0  
4.8  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.27  
0.050  
1.05  
0.041  
1.75  
0.25  
0.01  
0.25  
0.01  
0.25  
0.1  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.20  
0.014 0.0075 0.19  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.024  
0.028  
0.012  
inches 0.069  
0.01 0.004  
Notes  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
95-02-04  
97-05-22  
SOT96-1  
076E03S  
MS-012AA  
1998 Jan 28  
5
Philips Semiconductors  
Preliminary specification  
UHF power transistor  
BLT61  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1998 Jan 28  
6
Philips Semiconductors  
Preliminary specification  
UHF power transistor  
BLT61  
NOTES  
1998 Jan 28  
7
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Middle East: see Italy  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1998  
SCA57  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
125108/00/02/pp8  
Date of release: 1998 Jan 28  
Document order number: 9397 750 03244  

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