BLV45/12 [NXP]
VHF power transistor; 甚高频功率晶体管
| 型号： | BLV45/12 |
| 厂家： | 
NXP |
| 描述： | VHF power transistor |
| 文件： | 总10页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV45/12
VHF power transistor
August 1986
Product specification
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
DESCRIPTION
FEATURES
N-P-N silicon planar epitaxial
• multi-base structure and
transistor primarily intended for use in
mobile radio transmitters in the
175 MHz commmunications band.
emitter-ballasting resistors for an
optimum temperature profile
• gold metallization ensures
excellent reliability
• internal matching to achieve an
optimum wideband capability and
high power gain
The transistor has a 6-lead flange
envelope with a ceramic cap
(SOT-119). All leads are isolated from
the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in a common-emitter class-B circuit
MODE OF OPERATION
VCE
V
f
PL
W
Gp
dB
ηC
%
MHz
narrow band; c.w.
12,5
175
45
> 6,5
> 55
PIN CONFIGURATION
PINNING
PIN
DESCRIPTION
1
2
3
4
5
6
emitter
emitter
base
handbook, halfpage
1
2
4
6
collector
emitter
emitter
3
5
MSB006
Fig.1 Simplified outlinbe, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value
vCBOM
VCEO
VEBO
max.
max.
max.
36 V
16,5 V
4 V
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
d.c. or average
IC
max.
max.
9 A
peak value; f > 1 MHz
ICM
27 A
Total power dissipation
at Tmb = 25 °C; f > 1 MHz
Storage temperature
Ptot
Tstg
Tj
max.
max.
90 W
−65 to + 150 °C
Operating junction temperature
200 °C
MGP347
MGP348
160
10
handbook, halfpage
handbook, halfpage
I
C
T
= 25 °C
mb
(A)
P
tot
T
= 70 °C
h
(W)
80
ΙΙ
Ι
0
0
1
16.5
2
100
200
1
10
10
T
(°C)
V
(V)
h
CE
I
Continuous operation (f > 1 MHz)
Rth mb-h = 0,2 K/W.
II Short-time operation during mismatch; (f > 1 MHz)
Fig.2 D.C. soar.
Fig.3 Power/temperature derating curves;
Rth mb-h = 0,2 K/W.
THERMAL RESISTANCE
Dissipation = 68 W; Tmb = 25 °C
From junction to mounting base
(r.f. dissipation)
Rth j−mb
Rth mb−h
=
=
1,58 K/W
0,2 K/W
From mounting base to heatsink
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-base breakdown voltage
open emitter; IC = 50 mA
Collector-emitter breakdown voltage
open base; IC = 100 mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
>
>
>
<
>
36 V
16,5 V
4 V
Emitter-base breakdown voltage
open collector; IE = 10 mA
Collector cut-off current
VBE = 0; VCE = 16 V
22 mA
12,5 mJ
Second breakdown energy
L = 25 mH; f = 50 Hz; RBE = 10 Ω
D.C. current gain
ESBR
>
typ.
15
55
VCE = 10 V; IC = 6 A
hFE
Collector capacitance at f = 1 MHz
IE = ie = 0; VCB = 12,5 V
Cc
typ.
typ.
130 pF
3 pF
Collector-flange capacitance
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 12,5 V
Ccf
Cre
typ.
80 pF
MGP349
MGP350
100
400
handbook, halfpage
handbook, halfpage
h
FE
C
c
(pF)
V
= 12.5 V
10 V
CE
50
200
0
0
0
0
10
20
10
20
V
(V)
CB
I
(A)
C
Fig.4 D.C. current gain versus collector current;
Fig.5 Output capacitance versus VCB; IE = ie = 0;
Tj = 25 °C.
f = 1 MHz; Tj = 25 °C
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
APPLICATION INFORMATION
R. F. performance in c.w. operation (common-emitter circuit; class-B)
f = 175 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W
VCE
V
PL
W
Gp
dB
ηC
%
MODE OF OPERATION
narrow band; c.w.
12,5
45
>
6,5
8,0
>
55
67
typ.
typ.
C2
L2
C4
L3
C10
C7
L10
T.U.T.
L6
C1
L8
L1
50 Ω
50 Ω
C5
C3
C12
C8
C11
L4
L7
C6
L5
C9
R1
L9
MGP351
+V
CC
Fig.6 Class-B test circuit at f = 175 MHz.
List of components:
C1 = C11 = C12 = 4 to 40 pF film dielectric trimmer (cat.no. 2222 809 07008)
C2 = C10 = 10 pF multilayer ceramic chip capacitor (1)
C3 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C4 = C5 = 91 pF multilayer ceramic chip capacitor (1)
C6 = 820 pF multilayer ceramic chip capacitor (1)
C7 = C8 = 2 × 4,7 pF multilayer ceramic chip capacitors(1) in parallel
C9 = 100 nF polyester capacitor
L1 = strip, 28 mm × 4 mm
L2 = 4 turns Cu wire (1,0 mm); int.dia. 4,0 mm; length 7,5 mm; leads 2 × 3,5 mm
L3 = strip, 22 mm × 6 mm
L4 = 1 turn Cu wire (0,8 mm); int.dia. 3,0 mm; leads 2 × 9 mm
L5 = L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640)
L6 = strip, 12 mm × 6 mm
L7 = 2 turns enamelled Cu wire (1,6 mm); int.dia. 5,0 mm; length 7,0 mm; leads 2 × 5 mm
L8 = 2 turns enamelled Cu wire (1,6 mm); int.dia. 5,0 mm; length 7,0 mm; leads 2 × 3 mm
L10 = strip, 18 mm × 4 mm
L1, L3, L6 and L10 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric,
thickness 1/16 inch.
R1 = 4,7 Ω ± 10%, carbon resistor
Note
1. American Technical Ceramics capacitor type 100B or capacitor of same quality.
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
162
Cu strap
70
rivets
soldered copper
straps
ground plane
removed
L9
L5
+V
CC
R1
C6
C9
L4
C4
L7
C7
L2
C10
L10
L6
L1
L3
L8
C5
C2
C8
C12
C1
C3
C11
MGP352
Fig.7 Printed circuit board and component lay-out for 175 MHz class-B test circuit.
The circuit and components are on one side of the epoxy fibre-glass board. The other side, except for the area indicated
by the dotted line, is unetched copper serving as a ground plane.
If the p.c.b. is in direct contact with the heatsink, the heatsink area within the dotted line has to raised al least 0,5 mm to
minimize the dielectric losses.
Earth connections are made by hollow rivets and additionally by fixing screws and copper straps under the emitters to
provide a direct contact between the copper of the component side and the ground plane.
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
MGP353
MGP354
80
12
90
handbook, halfpage
handbook, halfpage
G
P
(dB)
η
P
L
(W)
C
(%)
10
η
C
40
8
6
50
G
P
0
4
0
10
0
10
20
30
20
40
60
80
P
(W)
S
P
(W)
L
Typical values; VCE = 12,5 V; f = 175 MHz;
Typical values; VCE = 12,5 V; f = 175 MHz;
Th = 25 °C; Rth mb-h = 0,2 K/W
Th = 25 °C; Rth mb-h = 0,2 K/W
Fig.8 Load power versus source power.
Fig.9 Power gain and efficiency versus load power.
Ruggedness in class-B operation
The BLV45/12 is capable of withstanding a load mismatch
(VSWR = 20 through all phases) at rated load power up to
a supply voltage of 15,5 V; Th = 25 °C; Rth mb-h = 0,2 K/W.
Power slump
If Th is increased from 25 °C to 70 °C the output power
slump for constant PS amounts to typ. 7 %
(VCE = 12,5 V; f = 175 MHz; Rth mb-h = 0,2 K/W).
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
MGP355
MGP356
3
3
handbook, halfpage
handbook, halfpage
r , x
R , X
i
i
L
L
(Ω)
(Ω)
R
L
2
1
0
2
r
i
1
0
x
i
X
L
−1
−1
50
100
150
200
50
100
150
200
f (MHz)
f (MHz)
Typical values; VCE = 12,5 V; PL = 45 W;
f = 50 to 200 MHz; Rth mb-h = 0,2 K/W.
Typical values; VCE = 12,5 V; PL = 45 W;
f = 50 to 200 MHz; Rth mb-h = 0,2 K/W.
Fig.10 Input impedance (series components).
Fig.11 Load impedance (series components).
MGP357
20
handbook, halfpage
G
P
(dB)
10
0
50
100
150
200
f (MHz)
Typical values; VCE = 12,5 V; PL = 45 W;
f = 50 to 200 MHz; Rth mb-h = 0,2 K/W.
Fig.12 Power gain versus frequency.
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT119A
A
F
B
q
C
U
1
w
2
H
1
M
C
b
2
c
2
4
6
p
H
D
U
D
U
1
3
2
w
M
A
B
1
A
1
3
5
b
w
3
b
M
Q
1
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
b
b
D
D
e
F
H
H
p
Q
q
U
U
U
w
w
w
3
UNIT
mm
1
2
1
1
1
2
3
1
2
5.59
5.33
7.39
6.32
5.34 4.07
5.08 3.81
12.86 12.83
12.59 12.57
2.54 22.10 18.55 3.31 4.58
2.28 21.08 18.28 2.97 3.98
25.23 6.48 12.76
23.95 6.07 12.06
0.18
0.07
18.42
0.725
0.51 1.02 0.26
0.02 0.04 0.01
6.48
0.255
0.220
0.210
0.291
0.249
0.160
0.150
0.505 0.505
0.496 0.495
0.100 0.870 0.730 0.130 0.180
0.090 0.830 0.720 0.117 0.157
0.255 0.502
0.239 0.475
0.210
0.200
0.007
0.003
0.993
0.943
inches
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT119A
97-06-28
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
10
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