BLV99SL [NXP]
UHF power transistor; 超高频功率晶体管
| 型号： | BLV99SL |
| 厂家： | 
NXP |
| 描述： | UHF power transistor |
| 文件： | 总10页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV99/SL
UHF power transistor
September 1991
Product specification
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
FEATURES
PIN CONFIGURATION
• Emitter-ballasting resistors for an
optimum temperature profile
• Gold metallization ensures
excellent reliability.
halfpage
1
c
DESCRIPTION
handbook, halfpage
3
2
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT172D
envelope with a ceramic cap. It is
designed primarily for use as a driver
stage in base stations in the 900 MHz
communications band. All leads are
isolated from the mounting base.
b
e
MBB012
4
MSB007
Top view
PINNING - SOT172D
Fig.1 Simplified outline and symbol.
PIN
DESCRIPTION
emitter
1
2
3
4
WARNING
base
Product and environmental safety - toxic materials
collector
emitter
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common emitter class-B test circuit.
MODE OF
OPERATION
f
VCE
(V)
PL
(W)
Gp
(dB)
ηc
(%)
(MHz)
c.w. narrow band
900
24
2
> 8
> 55
September 1991
2
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
50
UNIT
−
−
−
−
−
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current
open base
open collector
DC value
27
V
3.5
200
600
V
mA
mA
ICM
collector current
peak value
f > 1 MHz
Ptot
total power dissipation
f > 1 MHz;
−
6
W
Tmb = 50 °C
Tstg
Tj
storage temperature range
−65
150
200
°C
°C
junction operating temperature
−
MBK466
12
handbook, halfpage
P
tot
(W)
8
ΙΙ
Ι
4
0
0
40
80
120
160
T
(°C)
h
(I) Continuous RF operation.
(II) Short time operation during mismatch.
Fig.2 Power/temperature derating curves.
THERMAL RESISTANCE
SYMBOL
Rth j-mb(RF)
PARAMETER
CONDITIONS
PL = 4.5 W; Tmb = 25 °C
MAX.
UNIT
from junction to mounting base
20
K/W
September 1991
3
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
V(BR)CBO
PARAMETER
CONDITIONS
MIN.
50
TYP.
MAX.
UNIT
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
open emitter;
IC = 5 mA
−
−
−
−
−
−
−
V
V
V
V(BR)CEO
V(BR)EBO
ICES
VBE = 0;
IC = 10 mA
27
3.5
−
−
−
2
−
−
open collector;
IE = 0.5 mA
VBE = 0;
VCE = 27 V
mA
hFE
VCE = 20 V;
IC = 150 mA
25
0.5
ESBR
second breakdown energy
L = 25 mH;
BE = 10 Ω;
f = 50 Hz
mJ
pF
pF
R
Cc
collector capacitance
feedback capacitance
VCB = 24 V;
IE = Ie = 0;
f = 1 MHz
−
−
3
−
−
Cre
VCE = 24 V;
IC = 0;
1.3
f = 1 MHz
MBK467
MBK468
100
8
handbook, halfpage
handbook, halfpage
C
h
c
FE
(pF)
80
6
60
40
4
2
0
20
0
0
0.1
0.2
0.3
0.4
0.5
0
10
20
30
V
(V)
I
(A)
CB
C
VCE = 20 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current, typical values.
Fig.4 Collector capacitance as a function of
collector-base voltage, typical values.
September 1991
4
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
APPLICATION INFORMATION
RF performance Tmb = 25 °C in a common emitter class-B test circuit.
MODE OF OPERATION
f
VCE
(V)
PL
(W)
Gp
(dB)
ηc
(%)
(MHz)
c.w. narrow band
900
24
2
> 8
> 55
typ. 9.3
typ. 63
MBK470
MBK469
10
100
3
handbook, halfpage
handbook, halfpage
P
L
G
p
(W)
G
p
(dB)
η
(%)
C
2
η
C
5
50
1
0
0
0
0
0
1
2
3
0.1
0.2
0.3
0.4
P
(W)
P
(W)
L
S
Class-B operation; VCE = 24 V; f = 900 MHz;
Tmb = 25 °C.
Class-B operation; VCE = 24 V; f = 900 MHz;
Tmb = 25 °C.
Fig.6 Load power as a function of drive power,
typical values.
Fig.5 Gain and efficiency as functions of load
power, typical values.
Ruggedness in class-B operation
The BLV99/SL is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases under the following conditions:
VCE = 24 V, f = 900 MHz,
Tmb = 25 °C, and rated output power.
September 1991
5
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
T.U.T.
C7
C8
C2
L4
L5
L1
L9
L8
C10
50 Ω
50 Ω
C1
C3
C9
L2
L6
L7
+V
CC
R1
L3
C4
C5
C6
R2
MDA559
Fig.7 Class-B test circuit at f = 900 MHz.
List of components (see test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C3, C8, C9
C2
film dielectric trimmer
1.4 to 5.5 pF
4.7 pF
2222 809 09001
multilayer ceramic chip capacitor
(note 1)
C4, C6, C10
multilayer ceramic chip capacitor
63 V electrolytic capacitor
220 pF
1 µF
C5
C7
multilayer ceramic chip capacitor
(note 1)
2.2 pF
L1
L2
stripline (note 2)
50 Ω
48 mm × 2.4 mm
7 turns enamelled 0.4 mm copper
wire
50 nH
int. dia. 2 mm;
leads 2 × 5 mm
L3, L7
grade 3B Ferroxcube wideband HF
choke
4312 020 36642
L4, L5
L6
stripline (note 2)
35 Ω
14 mm × 4 mm;
6 turns enamelled 1 mm copper wire 120 nH
int. dia. 6 mm;
length 10 mm;
leads 2 × 5 mm
L8
stripline (note 2)
50 Ω
31 mm × 2.4 mm
29 mm × 2.4 mm
L9
stripline (note 2)
50 Ω
R1, R2
0.4 W metal film resistor
10 Ω, 5%
Notes
1. American Technical Ceramics type 100A or capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1⁄32 inch.
September 1991
6
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
170 mm
70 mm
M2
rivets
M3
+V
CC
R2
L7
C5
C6
R1
C4
L3
L6
L2
C2
C7
C8
C10
L1
L4
L5
L8
L9
C1
C3
C9
MDA560
The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched
and serves as a ground plane. Earth connections from the component side to the ground plane are made by
fixing screws, hollow rivets and copper straps under the emitters.
Fig.8 Component layout for 900 MHz class-B test circuit.
7
September 1991
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
MBK471
MBK472
10
80
handbook, halfpage
handbook, halfpage
r , x
R , X
i
i
L
L
(Ω)
(Ω)
x
i
8
60
40
20
0
X
L
6
4
r
i
R
L
2
0
800
850
900
950
1000
f (MHz)
800
850
900
950
1000
f (MHz)
Class-B operation; VCE = 24 V; PL = 2 W;
Tmb = 25 °C.
Class-B operation; VCE = 24 V; PL = 2 W;
Tmb = 25 °C.
Fig.9 Input impedance (series components) as a
function of frequency, typical values.
Fig.10 Load impedance (series components) as a
function of frequency , typical values.
MBK473
12
handbook, halfpage
G
p
(dB)
10
8
6
4
2
0
handbook, halfpage
Z
i
Z
MBA451
L
800
850
900
950
1000
f (MHz)
Class-B operation; VCE = 24 V; PL = 2 W;
Tmb = 25 °C.
Fig.12 Power gain as a function of frequency,
typical values.
Fig.11 Definition of transistor impedance.
September 1991
8
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
PACKAGE OUTLINE
Studless ceramic package; 4 leads
SOT172D
D
A
Q
c
D
1
H
b
4
b
1
H
1
3
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
b
D
D
H
Q
UNIT
1
1
3.31
3.04
0.89
0.63
5.33
5.08
3.71
2.89
5.20
4.95
26.17 1.15
24.63 0.88
0.16
0.10
mm
0.13 0.035
0.12 0.025
0.210
0.200
0.146
0.114
0.205
0.195
1.03 0.045
0.97 0.035
0.006
0.004
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-06-28
SOT172D
September 1991
9
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1991
10
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