BSH205G2R [NXP]
BSH205G2 - 20 V, P-channel Trench MOSFET TO-236 3-Pin;
| 型号： | BSH205G2R |
| 厂家： | 
NXP |
| 描述： | BSH205G2 - 20 V, P-channel Trench MOSFET TO-236 3-Pin 开关 光电二极管 晶体管 |
| 文件： | 总16页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3
2
T
O
S
BSH205G2
20 V, P-channel Trench MOSFET
29 April 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Low threshold voltage
Low on-state resistance
Trench MOSFET technology
Enhanced power dissipation capability of 890 mW
AEC-Q101 qualified
•
•
•
•
•
3. Applications
Relay driver
•
•
•
•
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
-20
8
Unit
V
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-8
-
V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
[1]
-2.3
A
Static characteristics
RDSon drain-source on-state
-
120
170
mΩ
resistance
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[1]
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
3
D
1
2
3
G
S
D
gate
source
drain
G
S
017aaa257
1
2
TO-236AB (SOT23)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BSH205G2
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
BSH205G2
%KB
[1] % = placeholder for manufacturing site code
BSH205G2
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Product data sheet
29 April 2015
2 / 16
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
8
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-8
V
ID
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
[1]
-
-2.3
-2
A
-
A
-
-1.2
-8
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[2]
[1]
-
480
890
mW
mW
-
Tsp = 25 °C
-
6250 mW
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
Tsp = 25 °C
[1]
-
-0.8
A
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[1]
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
BSH205G2
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Product data sheet
29 April 2015
3 / 16
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
aaa-016178
-10
t
= 10 µs
p
Limit R
= V /I
DS
t
p
= 100 µs
DSon
D
I
D
(A)
t
= 1 ms
p
-1
-1
t
= 10 ms
p
t
= 100 ms
p
DC; T = 25 °C
sp
-10
DC; T
= 25 °C;
amb
drain mounting pad 6 cm
2
-2
-10
-10
-1
2
-1
-10
-10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
230
120
85
Max
260
140
100
20
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
Rth(j-sp)
thermal resistance
from junction to solder
point
15
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
BSH205G2
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
29 April 2015
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NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
aaa-011994
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
2
10
0.33
0.25
0.20
0.10
0.05
0.02
10
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-011995
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.50
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSH205G2
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
29 April 2015
5 / 16
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.45 -0.7
-0.95
IDSS
IGSS
drain leakage current
gate leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
VGS = -4.5 V; ID = -2 A; Tj = 150 °C
VGS = -2.5 V; ID = -1.5 A; Tj = 25 °C
VGS = -1.8 V; ID = -0.6 A; Tj = 25 °C
VGS = -1.5 V; ID = -0.1 A; Tj = 25 °C
VDS = -10 V; ID = -2 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-1
µA
nA
-
100
-100
170
238
230
320
600
-
-
nA
RDSon
drain-source on-state
resistance
120
168
150
200
260
4.5
mΩ
mΩ
mΩ
mΩ
mΩ
S
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -10 V; ID = -2 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
3.7
0.6
0.8
418
45
6.5
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
34
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -2 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
5
-
-
-
-
ns
ns
ns
ns
14
43
16
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = -0.8 A; VGS = 0 V; Tj = 25 °C
-
-0.8
-1.2
V
BSH205G2
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Product data sheet
29 April 2015
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NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
aaa-016179
aaa-016180
-3
-4
-5
-6
-8
-10
V
= -4.5 V
-3 V
GS
-2.5 V
I
D
I
D
(A)
(A)
-6
-4
-2
0
-2.2 V
-1.8 V
-10
min
typ
max
-10
-10
-1.5 V
-1.2 V
0
-1
-2
-3
-4
0
-0.5
-1.0
-1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-016181
aaa-016182
0.8
0.8
-1.2 V -1.5 V
-1.8 V
-2.2 V
R
DSon
R
DSon
(Ω)
-2.5 V
0.6
0.6
0.4
0.2
0
0.4
0.2
0
T = 150 °C
j
-3 V
V
= -4.5 V
GS
T = 25 °C
j
0
-2
-4
-6
-8
0
-1
-2
-3
-4
-5
I
D
(A)
V
(V)
GS
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
ID = -2 A
BSH205G2
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Product data sheet
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NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
aaa-016183
aaa-016184
-8
2.0
1.5
1.0
0.5
0
T = 150 °C
j
I
a
D
(A)
-6
-4
-2
0
T = 25 °C
j
0
-1
-2
-3
-4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-016185
aaa-016186
3
-1.2
10
V
GS(th)
(V)
C
iss
C
(pF)
-0.8
-0.4
0
max
typ
2
10
C
C
oss
rss
min
10
-1
-10
2
-60
0
60
120
180
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
BSH205G2
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Product data sheet
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NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
aaa-016187
-5
V
DS
V
GS
(V)
I
D
-4
-3
-2
-1
0
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS2
GS1
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
0
1
2
3
4
Q
G
(nC)
ID = -2 A; VDS = -10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-016188
-4
I
S
(A)
-3
-2
-1
0
T = 150 °C
j
T = 25 °C
j
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
BSH205G2
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Product data sheet
29 April 2015
9 / 16
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BSH205G2
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
29 April 2015
10 / 16
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 3 leads
SOT23
B
D
A
E
X
H
E
v
A
3
Q
A
A
1
c
1
2
e
1
b
w
B
L
p
p
e
detail X
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
c
D
E
e
e
1
H
E
L
p
Q
v
w
1
p
max 1.1 0.1 0.48 0.15 3.0 1.4
nom
2.5 0.45 0.55
2.1 0.15 0.45
mm
1.9 0.95
0.2 0.1
0.9
0.38 0.09 2.8 1.2
min
sot023_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
14-06-19
14-09-22
SOT23
TO-236AB
Fig. 18. Package outline TO-236AB (SOT23)
BSH205G2
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Product data sheet
29 April 2015
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BSH205G2
20 V, P-channel Trench MOSFET
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
BSH205G2
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Product data sheet
29 April 2015
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NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
BSH205G2 v. 2
Modifications:
BSH205G2 v.1
Release date
Data sheet status
Change notice
Supersedes
20150429
Product data sheet
-
BSH205G2 v.1
AEC-Q101 qualified
•
20141215
Product data sheet
-
-
BSH205G2
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Product data sheet
29 April 2015
13 / 16
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
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associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
15.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
BSH205G2
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Product data sheet
29 April 2015
14 / 16
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BSH205G2
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
29 April 2015
15 / 16
NXP Semiconductors
BSH205G2
20 V, P-channel Trench MOSFET
16. Contents
1
2
3
4
5
6
7
8
9
10
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................6
11
Test information .....................................................9
11.1
Quality information ............................................. 10
12
13
14
Package outline ................................................... 11
Soldering .............................................................. 12
Revision history ...................................................13
15
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
15.1
15.2
15.3
15.4
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 April 2015
BSH205G2
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
29 April 2015
16 / 16
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