BSN20WT/R [NXP]
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80MA I(D) | SOT-323 ; 晶体管| MOSFET | N沟道| 50V V（ BR ） DSS |我80MA （D ） | SOT- 323\n
| 型号： | BSN20WT/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80MA I(D) | SOT-323
|
| 文件： | 总8页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BSN20W
N-channel enhancement mode
vertical D-MOS transistor
Product specification
2000 Mar 10
Supersedes data of 1997 Jun 20
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
FEATURES
PINNING - SOT323
PIN
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
SYMBOL
DESCRIPTION
1
2
3
g
s
d
gate
• No secondary breakdown.
source
drain
APPLICATIONS
• Thin and thick film circuits
• General purpose fast switching applications.
handbook, halfpage
d
s
3
DESCRIPTION
g
N-channel enhancement mode vertical D-MOS transistor
in a 3 pin plastic SOT323 SMD package.
1
2
Top view
MAM356
CAUTION
Marking code: M8- = made in Hong Kong; M8t = made in Malaysia
(or Bangkok).
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
VGSth
ID
PARAMETER
CONDITIONS
MAX.
UNIT
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
50
V
1.8
80
V
mA
Ω
RDSon
Ptot
drain-source on-state resistance
total power dissipation
15
T
amb ≤ 25 °C;
200
mW
note 1
Note
1. Device mounted on a printed-circuit board.
2000 Mar 10
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
CONDITIONS
MIN.
MAX.
50
UNIT
VDS
VGSO
ID
−
−
−
−
−
V
V
open drain
±20
80
mA
mA
mW
°C
IDM
Ptot
Tstg
Tj
peak drain current
300
200
+150
+150
total power dissipation
storage temperature
T
amb ≤ 25 °C; note 1
−65
−65
operating junction temperature
°C
Note
1. Device mounted on a printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
625
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 µA
50
0.4
−
−
−
V
VGSth
IDSS
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
VGS = VDS; ID = 1 mA
VGS = 0; VDS = 40 V
VGS = ±20 V; VDS = 0
−
1.8
1
V
−
µA
nA
Ω
IGSS
−
−
±100
15
20
30
15
15
5
RDSon
drain-source on-state resistance VGS = 10 V; ID = 80 mA
GS = 5 V; ID = 80 mA
−
8
V
−
14
18
8
Ω
VGS = 2.5 V; ID = 10 mA
−
Ω
Ciss
Coss
Crss
input capacitance
VGS = 0; VDS = 10 V; f = 1 MHz
VGS = 0; VDS = 10 V; f = 1 MHz
VGS = 0; VDS = 10 V; f = 1 MHz
−
pF
pF
pF
output capacitance
−
7
reverse transfer capacitance
−
2
Switching times
ton turn-on time
VGS = 0 to 10 V; VDD = 20 V;
ID = 80 mA
−
−
2
5
5
ns
ns
toff
turn-off time
VGS = 10 to 0 V; VDD = 20 V;
ID = 80 mA
10
2000 Mar 10
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
MRA781
MDA183
30
300
handbook, halfpage
handbook, halfpage
C
(pF)
P
tot
(mW)
20
10
200
100
(1)
(2)
(3)
0
0
0
5
10
15
20
V
25
(V)
0
50
100
200
( C)
150
T
o
DS
amb
VGS = 0; Tj = 25 °C; f = 1 MHz.
(1) Ciss
(2) Coss
(3) Crss
.
.
.
Device mounted on a printed-circuit board.
Fig.3 Capacitance as a function of drain-source
voltage; typical values.
Fig.2 Power derating curve.
handbook, halfpage
MRA783
MRA782
500
handbook, halfpage
500
V
= 10 V
7 V
I
D
GS
(mA)
I
D
400
(mA)
400
300
200
100
0
5 V
4 V
300
200
100
3 V
2.5 V
0
0
0
2
4
6
8
10
(V)
4
8
12
V
(V)
V
DS
GS
Tj = 25 °C.
VDS = 10 V; Tj = 25 °C.
Fig.4 Output characteristics; typical values.
Fig.5 Transfer characteristics; typical values.
2000 Mar 10
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
MDA162
MDA163
24
80
handbook, halfpage
handbook, halfpage
R
DSon
(Ω)
R
DSon
(Ω)
(1)
(2)
60
16
40
20
(3)
8
0
0
0
2
3
1
10
10
10
2
4
6
8
10
(V)
I
(mA)
D
V
GS
Tj = 25 °C.
(1) VGS = 2.5 V.
(2) VGS = 5 V.
(3) VGS = 10 V.
VDS = 0.1 V; Tj = 25 °C.
Fig.7 Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
Fig.6 Drain-source on-state resistance as a
function of drain current; typical values.
MRA785
MRA784
2
1.2
handbook, halfpage
handbook, halfpage
k
k
(2)
1.1
1
1.6
(1)
1.2
0.9
0.8
0.8
0.4
0.7
−50
0
50
100
150
−50
0
50
100
150
o
o
T ( C)
T ( C)
j
j
RDSon at Tj
k =
-----------------------------------------
RDSon at 25 °C
VGSth at Tj
--------------------------------------
VGSth at 25°C
k =
Typical RDSon at 100 mA / 10 V.
(1) ID = 10 mA; VGS = 2.5 V.
(2) ID = 100 mA; VGS = 10 V.
Typical VGSth at 1 mA.
Fig.8 Temperature coefficient of gate-source
threshold voltage.
Fig.9 Temperature coefficient of drain-source
on-state resistance.
2000 Mar 10
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
2000 Mar 10
6
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Mar 10
7
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69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603502/02/pp8
Date of release: 2000 Mar 10
Document order number: 9397 750 06692
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