BSN254A [NXP]
N-channel enhancement mode vertical D-MOS transistor; N沟道增强型垂直的D- MOS晶体管
| 型号： | BSN254A |
| 厂家： | 
NXP |
| 描述： | N-channel enhancement mode vertical D-MOS transistor |
| 文件： | 总12页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BSN254; BSN254A
N-channel enhancement mode
vertical D-MOS transistor
Product specification
2002 Feb 19
Supersedes data of 1997 Jun 23
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
FEATURES
PINNING - SOT54 variant
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
DESCRIPTION
BSN254A
PIN
BSN254
gate
• No secondary breakdown
1
2
3
source
gate
• Low RDSon
.
drain
source
drain
APPLICATIONS
• Line current interruptor in telephone sets
d
s
handbook, halfpage
• Relay, high-speed and line transformer drivers.
1
2
3
DESCRIPTION
g
N-channel enhancement mode vertical D-MOS transistor
in a SOT54 (TO-92) variant package.
MAM146
note: various pinnings are available on request
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage (DC)
drain current (DC)
CONDITIONS
TYP.
MAX.
250
UNIT
−
−
−
V
ID
310
1
mA
W
Ω
Ptot
total power dissipation
Tamb ≤ 25 °C
RDSon
VGSth
drain-source on-state resistance ID = 300 mA; VGS = 10 V
gate-source threshold voltage ID = 1 mA; VDS = VGS
2.8
5
−
2
V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VDS
VGSO
ID
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
CONDITIONS
MIN.
MAX.
UNIT
−
250
±20
310
1.25
1
V
open drain
−
V
−
mA
A
IDM
Ptot
Tstg
Tj
peak drain current
−
total power dissipation
storage temperature
junction temperature
T
amb ≤ 25 °C; note 1
−
W
°C
°C
−55
−
+150
150
Note
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
10 × 10 mm.
2002 Feb 19
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
thermal resistance from junction to ambient; note 1
VALUE
UNIT
125
K/W
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
10 × 10 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ID = 10 µA; VGS = 0
MIN. TYP. MAX. UNIT
V(BR)DSS
IGSS
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
250
−
−
−
V
VGS = ±20 V; VDS = 0
−
±100 nA
VGSth
ID = 1 mA; VDS = VGS
0.8
−
−
2
V
RDSon
ID = 20 mA; VGS = 2.4 V
ID = 300 mA; VGS = 10 V
VDS = 200 V; VGS = 0
−
7.5
5
Ω
−
2.8
−
Ω
IDSS
Yfs
drain-source leakage current
transfer admittance
−
1
µA
mS
pF
pF
pF
ID = 300 mA; VDS = 25 V
VDS = 25 V; VGS = 0; f = 1 MHz
VDS = 25 V; VGS = 0; f = 1 MHz
VDS = 25 V; VGS = 0; f = 1 MHz
200
−
600
100
21
10
−
Ciss
Coss
Crss
input capacitance
120
30
15
output capacitance
−
feedback capacitance
−
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 250 mA; VDD = 50 V;
−
−
6
10
60
ns
ns
VGS = 0 to 10 V
toff
turn-off time
ID = 250 mA; VDD = 50 V;
VGS = 10 to 0 V
47
2002 Feb 19
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
handbook, halfpage
INPUT
90 %
V
= 50 V
handbook, halfpage
DD
10 %
90 %
OUTPUT
10 V
0 V
I
D
10 %
50 Ω
t
t
off
on
MBB691
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
MRC238
MGU569
1.2
1.2
handbook, halfpage
handbook, halfpage
(1)
(2)
(3)
I
D
P
tot
(A)
(W)
(4)
0.8
0.8
(5)
0.4
0.4
(6)
(7)
0
0
0
0
50
100
150
200
(°C)
2
4
6
8
10
(V)
T
V
DS
amb
Tj = 25 °C.
(1) VGS = 10 V.
(2) VGS = 5 V.
(3) VGS = 4 V.
(4) VGS = 3.5 V.
(5) VGS = 3 V.
(6) VGS = 2.5 V.
(7) VGS = 2 V.
Fig.4 Power derating curve.
Fig.5 Typical output characteristics.
2002 Feb 19
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
MGU570
MGU571
1.6
20
handbook, halfpage
I
handbook, halfpage
(1)
D
R
(A)
DSon
(Ω)
1.4
(2)
1.2
1
15
0.8
0.6
0.4
0.2
0
10
5
(3)
(4)
(5)
(6)
0
10
−1
1
10
0
2
4
6
8
V
10
(V)
I
(A)
D
GS
Tj = 25 °C.
(1) VGS = 2.5 V.
(2) VGS = 3 V.
(3) VGS = 3.5 V.
(4) VGS = 4 V.
(5) VGS = 5 V.
(6) VGS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.7 Drain-source on-state resistance as a
function of drain current; typical values.
Fig.6 Typical transfer characteristics.
MGU572
250
handbook, halfpage
C
(pF)
200
150
Ciss
100
50
Coss
Crss
0
0
10
20
30
V
(V)
DS
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.8 Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
2002 Feb 19
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
MGU573
MGU574
2
1.25
handbook, halfpage
handbook, halfpage
k
k
(1)
1
1.5
(2)
0.75
0.5
1
0.5
0
0.25
0
−50
−50
0
50
100
150
0
50
100
150
T (°C)
T (°C)
j
j
RDSon at Tj
k =
-----------------------------------------
RDSon at 25 °C
VGSth at Tj
---------------------------------------
VGSth at 25 °C
k =
Typical RDSon:
(1) ID = 250 mA; VGS = 10 V.
Typical VGSth at 1 mA.
(2)
ID = 20 mA; VGS = 2.4 V.
Fig.9 Temperature coefficient of drain-source
on-state resistance; typical values.
Fig.10 Temperature coefficient of gate-source
threshold voltage; typical values.
2002 Feb 19
6
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
L
2
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
L
2
1
UNIT
mm
A
b
b
c
D
d
E
e
e
L
1
1
max
max
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
2.54
1.27
2.5
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
PROJECTION
VERSION
IEC
JEDEC
EIAJ
98-03-26
SOT54 variant
TO-92 variant
SC-43
2002 Feb 19
7
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Feb 19
8
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
NOTES
2002 Feb 19
9
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
NOTES
2002 Feb 19
10
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
NOTES
2002 Feb 19
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613510/03/pp12
Date of release: 2002 Feb 19
Document order number: 9397 750 09312
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