BSN254AMO [NXP]
TRANSISTOR 300 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal;
| 型号： | BSN254AMO |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 300 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal 开关 晶体管 |
| 文件： | 总14页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSN254
BSN254A
N-channel enhancement mode
vertical D-MOS transistors
April 1995
Product specification
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
vertical D-MOS transistors in TO-92
variant envelope and designed for
use as line current interrupters in
telephone sets and for application in
relay, high-speed and
Drain-source voltage
VDS
ID
max.
max.
max.
250 V
300 mA
1 W
Drain current (DC)
Total power dissipation up to Tamb = 25 °C
Drain-source on-resistance
ID = 300 mA; VGS = 10 V
Ptot
typ.
max.
5.0 Ω
7.0 Ω
RDS(on)
line-transformer drivers.
Gate-source threshold voltage
VGS(th)
max.
2 V
FEATURES
• Direct interface to C-MOS, TTL,
PINNING (BSN254)
etc.
1 = gate
• High-speed switching
• No second breakdown
• Low RDS (on)
2 = drain
3 = source
PINNING (BSN254A)
1 = source
2 = gate
3 = drain
PIN CONFIGURATION - TO-92 VARIANT
d
s
handbook, halfpage
1
2
3
g
MAM146
Note: Various pinnings are available on request.
Fig.1 Simplified outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
± VGSO
ID
max.
250 V
20 V
Gate-source voltage (open drain)
Drain current (DC)
max.
max.
max.
max.
300 mA
1.2 A
1 W
Drain current (peak)
IDM
Ptot
Tstg
Tj
Total power dissipation up to Tamb = 25 °C (note 1)
Storage temperature range
Junction temperature
−65 to + 150 °C
max.
150 °C
THERMAL RESISTANCE
From junction to ambient (note 1)
Note
Rth j-a
=
125 K/W
1. Device mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm × 10 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Drain-source breakdown voltage
ID = 10 µA; VGS = 0
V(BR) DSS
min.
max.
max.
250 V
1 µA
Drain-source leakage current
VDS = 200 V; VGS = 0
IDSS
Gate-source leakage current
± VGS = 20 V; VDS = 0
± IGSS
100 nA
Gate threshold voltage
ID = 1 mA; VDS = VGS
min.
max.
0.8 V
2.0 V
VGS(th)
Drain-source on-resistance
ID = 300 mA; VGS = 10 V
typ.
max.
5.0 Ω
7.0 Ω
RDS (on)
RDS(on)
Yfs
ID = 20 mA; VGS = 2.4 V
Transfer admittance
max.
10 Ω
min.
typ.
200 mS
400 mS
ID = 300 mA; VDS = 25 V
Input capacitance at f = 1 MHz
VDS = 25 V; VGS = 0
typ.
max.
65 pF
90 pF
Ciss
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
Output capacitance at f = 1 MHz
typ.
max.
20 pF
30 pF
V
DS = 25 V; VGS = 0
Coss
Feedback capacitance at f = 1 MHz
VDS = 25 V; VGS = 0
typ.
max.
5 pF
15 pF
Crss
Switching times (see Figs 2 and 3)
typ.
max.
5 ns
10 ns
ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V
ton
typ.
max.
20 ns
30 ns
toff
V
= 50 V
handbook, halfpage
INPUT
handbook, halfpage
90 %
DD
10 %
90 %
10 V
0 V
OUTPUT
I
D
50 Ω
10 %
MSA631
t
t
off
on
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
MRC238
MDA712
1.2
2
handbook, halfpage
handbook, halfpage
I
D
P
(A)
tot
V
= 10 V
6 V
1.6
(W)
GS
5 V
0.8
1.2
0.8
4 V
0.4
3 V
2 V
0.4
0
0
0
0
50
100
150
200
(°C)
2
4
6
8
10
(V)
T
V
DS
amb
Fig.4 Power derating curve.
Fig.5 Output characteristics; Tj = 25 °C; typical
values.
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
MDA713
MDA714
4
10
2
handbook, halfpage
handbook, halfpage
I
D
I
(A)
D
(mA)
1.6
V
= 10 V
5 V
4 V
GS
3
10
1.2
0.8
3 V
2
10
0.4
0
10
0
4
8
12
R
16
(Ω)
0
2
4
6
8
10
(V)
V
DSon
GS
Fig.6 Transfer characteristic; VDS = 10 V;
Fig.7 On-resistance as a function of drain current;
Tj = 25 °C; typical value.
Tj = 25 °C; typical values.
MDA716
MDA715
200
1.4
handbook, halfpage
handbook, halfpage
C
(pF)
k
160
1.2
120
80
1
0.8
0.6
C
C
iss
40
oss
rss
C
0
0
5
10
15
20
V
25
(V)
−50
0
50
100
150
T (°C)
j
DS
Fig.9
VGS(th)at Tj
----------------------------------------
k =
;
Fig.8 Capacitances as a function of drain-source
voltage; VGS = 0; f = 1 MHz; Tj = 25 °C;
typical values.
VGS(th)at 25 °C
VGS(th) at 1 mA; typical values
April 1995
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
MDA717
2.8
k
2.4
2
(1)
(2)
1.6
1.2
0.8
0.4
− 50
0
50
100
150
T (°C)
j
Fig.10
RDS (on) at Tj
--------------------------------------------
k =
;
RDS (on) at 25 °C
typical values.
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
PACKAGE OUTLINES
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
L
2
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
L
2
1
UNIT
mm
A
b
b
c
D
d
E
e
e
L
1
1
max
max
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
2.54
1.27
2.5
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-04-14
SOT54 variant
TO-92
SC-43
April 1995
7
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
8
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
NOTES
April 1995
9
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
NOTES
April 1995
10
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
NOTES
April 1995
11
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© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
137107/00/01/pp12
Date of release: April 1995
Document order number: 9397 750 02462
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N-channel enhancement mode vertical D-MOS transistors in TO-92 variant envelop
use as line current interrupters in telephone sets and for application in relay, high-sp
transformer drivers.
Cross reference
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Packages
Features
Application notes
Selection guides
Other technical documentation
End of Life information
Datahandbook system
l Direct interface to C-MOS, TTL, etc.
l High-speed switching
l No second breakdown
l Low RDS (on)
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BSN254; BSN254A
BSN254; BSN254A
BSN254; N-channel enhancement 01-Apr-95
BSN254A mode vertical D-MOS
transistors
Product
Specification
12
75
Products, packages, availability and ordering
North
Order code
(12nc)
Partnumber American
Partnumber
marking/packing package device status
Standard
BSN254
BSN254
Marking *
9340 049 30126
SOT54 Full productio
Ammopack,
AMO
Radial
Standard
BSN254A
BSN254A
Marking *
9340 039 60126
SOT54 Full productio
2 of 2
AMO
Ammopack,
Radial
Please read information about some discontinued variants of this product.
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functional category.
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Royal Philips Electronics
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相关型号：
BSN304AMO
TRANSISTOR 250 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal
NXP
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