BT258S-800R [NXP]
Thyristors logic level; 晶闸管逻辑电平
| 型号： | BT258S-800R |
| 厂家： | 
NXP |
| 描述： | Thyristors logic level |
| 文件： | 总6页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Thyristors
logic level
BT258S-800R
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated,sensitivegatethyristorin
a plastic envelope, suitable for
surface mounting, intended for use in
general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
SYMBOL
PARAMETER
MAX. UNIT
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
Repetitive peak off-state voltages
800
V
Average on-state current
5
8
75
A
A
A
RMS on-state current
Non-repetitive peak on-state current
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
NUMBER
tab
a
k
1
2
cathode
anode
gate
3
2
g
1
3
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDRM, VRRM Repetitive peak off-state
voltages
-
800
V
IT(AV)
IT(RMS)
ITSM
Average on-state current half sine wave; Tmb ≤ 111 ˚C
-
-
5
8
A
A
RMS on-state current
Non-repetitive peak
on-state current
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
-
-
-
75
82
28
50
A
A
t = 8.3 ms
t = 10 ms
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
A/µs
IGM
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
2
5
5
0.5
150
1251
A
V
W
W
˚C
˚C
VRGM
PGM
PG(AV)
Tstg
-
-
-
over any 20 ms period
-40
-
Tj
1 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 2002
1
Rev 2.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258S-800R
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
-
-
2.0
K/W
Rth j-a
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
IL
Gate trigger current
Latching current
Holding current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 16 A
-
50
0.4
0.3
1.3
0.4
0.2
0.1
200
10
6
µA
mA
mA
V
-
IH
-
-
-
VT
VGT
On-state voltage
Gate trigger voltage
1.6
1.5
-
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C
V
0.1
-
V
mA
ID, IR
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 100 Ω
ITM = 10 A; VD = VDRM(max); IG = 5 mA;
dIG/dt = 0.2 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
50
100
-
-
-
V/µs
tgt
tq
-
2
µs
-
100
µs
October 2002
2
Rev 2.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258S-800R
P
(W)
T
(˚C)
109
tot
ITSM / A
mb(max)
80
70
60
50
40
30
20
10
0
8
6
4
2
0
a = 1.57
conduction form
I
angle
factor
(a)
TSM
I
111
113
115
117
119
121
123
125
T
degrees
1.9
60
90
120
180
2.8
2.2
1.9
1.57
2.2
time
Tj initial = 25 C max
T
2.8
4
1
10
100
1000
0
6
4
2
I
(A)
Number of half cycles at 50Hz
T(AV)
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
a = form factor = IT(RMS)/ IT(AV)
.
ITSM / A
IT(RMS) / A
24
1000
100
10
20
16
12
8
dI T/dt limit
I
TSM
time
I
T
T
4
Tj initial = 25 C max
0
10ms
10us
100us
1ms
0.01
0.1
surge duration / s
1
10
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 111˚C.
IT(RMS) / A
VGT(Tj)
9
8
7
6
5
4
3
2
1
0
VGT(25 C)
1.6
111 C
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
Tmb / C
100
150
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
October 2002
3
Rev 2.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258S-800R
IGT(Tj)
IGT(25 C)
I
/ A
T
30
20
10
0
3
T = 125 °C
j
T = 25 °C
j
2.5
2
1.5
1
typ
max
Vo = 1 V
Rs = 0.04 Ω
0.5
0
0
0.5
1
1.5
2
-50
0
50
Tj / C
100
150
V
/ V
T
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Zth j-mb (K/W)
10
IL(Tj)
IL(25 C)
3
2.5
2
1
1.5
1
t
P
D
0.1
p
t
0.5
0
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
versus junction temperature Tj.
dVD/dt (V/us)
1000
IH(Tj)
IH(25 C)
3
RGK = 100 ohms
2.5
2
100
1.5
1
10
0.5
0
1
-50
0
50
Tj / C
100
150
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
versus junction temperature Tj.
October 2002
4
Rev 2.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258S-800R
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
seating plane
2.38 max
0.93 max
1.1
5.4
6.73 max
tab
4 min
4.6
6.22 max
0.5 min
10.4 max
0.5
2
0.3
0.5
3
1
0.8 max
(x2)
2.285 (x2)
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
October 2002
5
Rev 2.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258S-800R
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS2
PRODUCT
DEFINITIONS
STATUS3
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
Production
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
October 2002
6
Rev 2.000
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