BTA151-650R [NXP]
Thyristors sensitive gate; 晶闸管敏感栅
| 型号： | BTA151-650R |
| 厂家： | 
NXP |
| 描述： | Thyristors sensitive gate |
| 文件： | 总6页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in general purpose
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BTA151- 500R 650R 800R
switching
and
phase
control
VDRM
VRRM
IT(AV)
,
Repetitive peak off-state
500
650
800
V
applications.
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
7.5
12
100
7.5
12
100
7.5
12
100
A
A
A
IT(RMS)
ITSM
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
cathode
anode
gate
a
k
2
3
g
2
3
1
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -650R -800R
VDRM, VRRM Repetitive peak off-state
voltages
-
5001
6501
800
V
IT(AV)
IT(RMS)
ITSM
Average on-state current half sine wave; Tmb ≤ 109 ˚C
-
-
7.5
12
A
A
RMS on-state current
Non-repetitive peak
on-state current
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
-
-
-
100
110
50
A
A
t = 8.3 ms
t = 10 ms
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
A/µs
50
IGM
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
2
5
12
5
0.5
150
125
A
V
V
W
W
˚C
˚C
VGM
VRGM
PGM
PG(AV)
Tstg
-
-
-
-
over any 20 ms period
-40
-
Tj
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
-
-
1.3
K/W
Rth j-a
in free air
-
60
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
IL
Gate trigger current
Latching current
Holding current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 23 A
-
2
4
40
16
1.75
1.5
-
mA
mA
mA
V
-
10
7
IH
-
-
VT
VGT
On-state voltage
Gate trigger voltage
1.4
0.6
0.4
0.1
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
-
0.25
-
V
V
mA
ID, IR
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Critical rate of rise of
off-state voltage
VD = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform
Gate open circuit
GK = 100 Ω
50
200
-
130
1000
2
-
-
-
V/µs
V/µs
µs
R
tgt
tq
Gate controlled turn-on
time
Circuit commutated
turn-off time
ITM = 40 A; VD = VDRM; IG = 0.1 A;
dIG/dt = 5 A/µs
VD = 67% VDRM(max); ITM = 20 A; VR = 25 V;
dITM/dt = 30 A/µs; dVD/dt = 50 V/µs;
RGK = 100 Ω
-
70
-
µs
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
ITSM / A
Ptot / W
15
Tmb(max) / C
120
100
80
60
40
20
0
105.5
112
conduction form
I
TSM
time
I
angle
factor
a
4
2.8
2.2
1.9
1.57
T
a = 1.57
1.9
degrees
30
60
90
T
2.2
Tj initial = 25 C max
10
5
120
180
2.8
4
118.5
125
0
0
1
2
3
4
5
6
7
8
1
10
100
1000
IT(AV) / A
Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
a = form factor = IT(RMS)/ IT(AV)
.
ITSM / A
IT(RMS) / A
1000
100
10
25
20
15
10
5
dIT/dt limit
I
TSM
time
I
T
T
Tj initial = 25 C max
0
10ms
10us
100us
1ms
0.01
0.1
surge duration / s
1
10
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 109˚C.
VGT(Tj)
IT(RMS) / A
15
10
5
VGT(25 C)
1.6
1.4
1.2
1
109 C
0.8
0.6
0.4
0
-50
0
50
Tmb / C
100
150
-50
0
50
100
150
Tj / C
Fig.3. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
IGT(Tj)
IGT(25 C)
IT / A
30
25
20
15
10
5
Tj = 125 C
Tj = 25 C
3
2.5
2
Vo = 1.06 V
Rs = 0.0304 ohms
typ
max
1.5
1
0.5
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
1
3
2.5
2
0.1
1.5
1
t
P
p
D
0.01
t
0.5
0
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
IH(Tj)
IH(25 C)
dVD/dt (V/us)
10000
3
2.5
2
1000
RGK = 100 Ohms
1.5
1
100
gate open circuit
0.5
0
10
-50
0
50
Tj / C
100
150
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
2.8
2.3
mounting
base
7.8
max
3.75
3.1
2.5
11.1
max
1)
2.54
max
1.2
15.3
min
2
3
1
0.5
4.58
2.29
0.88
max
1) Lead dimensions within this
zone uncontrolled.
Fig.13. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.200
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