BUJD103AD [NXP]
NPN power transistor with integrated diode; 集成二极管NPN功率晶体管
| 型号： | BUJD103AD |
| 厂家： | 
NXP |
| 描述： | NPN power transistor with integrated diode |
| 文件： | 总14页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUJD103AD
NPN power transistor with integrated diode
Rev. 02 — 6 October 2009
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
Fast switching
Integrated anti-parallel E-C diode
High voltage capability
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Inverters
Electronic lighting ballasts
Motor control systems
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max Unit
IC
collector current
-
-
-
-
4
A
Ptot
total power
dissipation
see Figure 4Tmb ≤ 25 °C
80
W
VCESM
collector-emitter
peak voltage
VBE = 0 V
-
-
700
V
Static characteristics
hFE DC current gain
IC = 500 mA; VCE = 5 V;
see Figure 12Tj = 25 °C
13
-
22
32
-
VCE = 5 V; IC = 3 A;
12.5
Tmb = 25 °C; see Figure 12
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
B
C
E
base
mb
C
[1]
2
collector
emitter
3
B
E
2
sym131
1
3
SOT428
(DPAK)
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT428
BUJD103AD
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCESM
collector-emitter peak
voltage
VBE = 0 V
-
700
V
VCBO
VCEO
collector-base voltage IE = 0 A
-
-
700
400
V
V
collector-emitter
voltage
IB = 0 A
IC
collector current
peak collector current
base current
-
4
A
ICM
IB
see Figure 1, 2 and 3
-
8
A
-
2
A
IBM
Ptot
Tstg
Tj
peak base current
-
4
A
total power dissipation Tmb ≤ 25 °C; see Figure 4
storage temperature
-
80
150
150
W
°C
°C
-65
-
junction temperature
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
2 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
001aac000
V
C
CC
10
I
C
L
(A)
V
CL(CE)
probe point
8
6
4
2
0
L
B
I
Bon
DUT
V
BB
001aab999
Fig 1. Test circuit for reverse bias safe operating area
0
200
400
600
800
CEclamp
1000
(V)
V
Fig 2. Reverse bias safe operating area
001aac001
2
10
I
C
(A)
duty cycle = 0.01
10
I
CM(max)
II
(3)
t = 20 μs
p
I
C(max)
(1)
50 μs
100 μs
1
200 μs
500 μs
DC
(2)
−1
10
I
(3)
−2
10
III
(3)
−3
10
2
3
1
10
10
10
V
(V)
CEclamp
Fig 3. Forward bias safe operating area for Tmb ≤ 25 °C
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
3 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
001aab993
120
P
der
(%)
80
40
0
0
40
80
120
160
T
mb
(°C)
Fig 4. Normalized total power dissipation as a function of mounting base temperature
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
4 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from see Figure 5
junction to mounting
base
-
-
1.56
K/W
Rth(j-a)
thermal resistance from printed-circuit-board mounted; minimum
-
75
-
K/W
junction to ambient
footprint; see Figure 6
001aab998
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
t
p
0.05
0.02
P
δ =
tot
T
−1
10
10
0.01
t
t
p
T
−2
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
p
(s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width
7.0
7.0
1.5
2.15
2.5
4.57
001aab021
Fig 6. Minimum footprint SOT428
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
5 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
ICES
collector-emitter cut-off VBE = 0 V; VCE = 700 V; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
1
2
1
5
1
mA
mA
mA
mA
mA
current
[1]
[1]
VBE = 0 V; VCE = 700 V; Tj = 125 °C;
VBE = 0 V; VCE = 700 V; Tj = 25 °C;
VBE = 0 V; VCE = 700 V; Tj = 100 °C
[1]
[1]
ICBO
ICEO
IEBO
collector-base cut-off
current
VCB = 700 V; IE = 0 A;
collector-emitter cut-off VCE = 400 V; IB = 0 A;
current
-
-
0.1
mA
emitter-base cut-off
current
VEB = 9 V; IC = 0 A
VEB = 7 V; IC = 0 A
-
-
-
-
1
mA
mA
V
-
10
-
VCEOsus
VCEsat
collector-emitter
sustaining voltage
IB = 0 A; IC = 10 mA; LC = 25 mH;
see Figure 7 and 8
400
collector-emitter
saturation voltage
IC = 1 A; IB = 0.2 A; see Figure 9 and 10
IC = 2 A; IB = 0.5 A; see Figure 9 and 10
IC = 3 A; IB = 0.6 A; see Figure 9 and 10
IC = 4 A; IB = 1 A; see Figure 9 and 10
-
0.1
0.5
0.6
1
V
V
V
V
V
V
V
V
-
0.2
-
0.25
0.3
-
1
VBEsat
base-emitter saturation IC = 1 A; IB = 0.2 A; see Figure 11
-
0.85
0.92
0.97
1.04
17
1.2
1.6
1.5
1.5
32
voltage
IC = 2 A; IB = 0.5 A; see Figure 11
-
IC = 3 A; IB = 0.6 A; see Figure 11
-
VF
forward voltage
DC current gain
IF = 2 A
-
hFE
IC = 1 mA; VCE = 5 V; Tmb = 25 °C;
see Figure 12
10
IC = 500 mA; VCE = 5 V; Tj = 25 °C;
see Figure 12
13
12
11
-
22
32
40
22
-
IC = 1 A; VCE = 5 V; Tmb = 25 °C;
see Figure 12
20
IC = 2 A; VCE = 5 V; Tmb = 25 °C;
see Figure 12
16
IC = 3 A; VCE = 5 V; Tmb = 25 °C;
see Figure 12
12.5
Dynamic characteristics
ton
turn-on time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 Ω; Tj 25 °C; resistive load;
see Figure 13 and 14
-
0.52
0.6
µs
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
6 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
Table 6.
Symbol
ts
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
storage time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 Ω; Tj = 25 °C; resistive load;
see Figure 13 and 14
-
2.7
3.3
µs
IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH;
Tj = 25 °C; inductive load;
see Figure 15 and 16
-
-
-
-
-
1.2
-
1.4
1.8
0.35
120
60
µs
µs
µs
ns
ns
IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH;
Tj = 100 °C; inductive load; see Figure 15
and 16
tf
fall time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 Ω; Tj = 25 °C; resistive load;
see Figure 17 and 14
0.3
-
IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH;
Tj = 100 °C; inductive load; see Figure 15
and 16
IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH;
Tj 25 °C; inductive load;
30
see Figure 18 and 16
[1] Measured with half sine-wave voltage (curve tracer)
I
C
50 V
100 Ω to 200 Ω
(mA)
horizontal
oscilloscope
vertical
250
6 V
300 Ω
1 Ω
100
30 Hz to 60 Hz
001aab987
10
0
Fig 7. Test circuit for collector-emitter sustaining
voltage
min
V
CE
(V)
V
CEOsus
001aab988
Fig 8. Oscilloscope display for collector-emitter
sustaining voltage test waveform
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
7 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
001aab995
001aab997
2.0
V
CEsat
(V)
V
CEsat
(V)
0.5
0.4
0.3
0.2
0.1
0
I
C
= 1 A
2 A 3 A
4 A
1.6
1.2
0.8
0.4
0
−2
−1
−1
10
10
1
10
10
1
10
I
(A)
I (A)
C
B
Fig 9. Collector-emitter saturation voltage as a
function of base current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
001aab996
001aab994
2
1.4
10
V
BEsat
(V)
T = 25 °C
j
1.2
h
FE
1.0
0.8
0.6
0.4
0.2
0
V
= 5 V
1 V
CE
10
1
10
−1
−2
−1
10
1
10
10
1
10
I
C
(A)
I (A)
C
Fig 11. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 12. DC current gain as a function of collector
current; typical values
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
8 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
V
CC
I
C
I
Con
90 %
90 %
R
L
V
t
IM
0
R
B
DUT
10 %
p
t
t
f
T
001aab989
t
s
I
B
t
on
t
off
I
Bon
10 %
Fig 13. Test circuit for resistive load switching
t
t ≤ 30 ns
r
−I
Boff
001aab990
Fig 14. Switching times waveforms for resistive load
V
C
I
C
CC
I
Con
90 %
L
L
B
I
Bon
DUT
V
BB
001aab991
10 %
t
t
f
t
s
Fig 15. Test circuit for inductive load switching
t
off
I
B
I
Bon
t
−I
Boff
001aab992
Fig 16. Switching times waveforms for inductive load
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
9 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
V
CC
V
CC
R
L
L
C
V
t
IM
0
R
B
DUT
L
B
I
V
Bon
DUT
BB
p
T
001aab989
001aab991
Fig 18. Test circuit for inductive load switching
Fig 17. Test circuit for resistive load switching
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
10 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
7. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A
1
b
2
E
1
mounting
base
D
2
D
1
H
D
2
L
L
2
L
1
1
3
b
1
b
M
c
w
A
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
y
max
D
min
E
min
L
1
min
2
1
UNIT
A
A
1
b
b
b
c
D
E
e
e
1
H
D
L
L
2
w
1
2
1
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
0.9
0.5
4.0
4.45
0.5
mm
2.285 4.57
0.2
0.2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
06-02-14
06-03-16
SOT428
SC-63
TO-252
Fig 19. Package outline SOT428 (DPAK)
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
11 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
8. Revision history
Table 7.
Revision history
Document ID
BUJD103AD_2
Modifications:
BUJD103AD_1
Release date
Data sheet status
Change notice
Supersedes
20091006
Product data sheet
-
BUJD103AD_1
• Various changes to content.
20090508 Product data sheet
-
-
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
12 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Applications — Applications that are described herein for any of these
9.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BUJD103AD_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 October 2009
13 of 14
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 6 October 2009
Document identifier: BUJD103AD_2
相关型号：
BUK-110-50DL118
TRANSISTOR 45 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP
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