BUK209-50Y,127 [NXP]
BUK209-50Y;型号: | BUK209-50Y,127 |
厂家: | NXP |
描述: | BUK209-50Y 局域网 驱动 接口集成电路 驱动器 |
文件: | 总8页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
TOPFET high side switch
BUK209-50Y
DESCRIPTION
QUICK REFERENCE DATA
Monolithic single channel high side
protected power switch in
TOPFET2 technology assembled in
a 5 pin plastic package.
SYMBOL
PARAMETER
MIN.
UNIT
IL
Nominal load current (ISO)
6
A
APPLICATIONS
SYMBOL
PARAMETER
MAX.
UNIT
General controller for driving
lamps, motors, solenoids, heaters.
VBG
IL
Continuous off-state supply voltage
Continuous load current
50
12
150
60
V
A
˚C
mΩ
Tj
Continuous junction temperature
RON
On-state resistance
Tj = 25˚C
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
BATT
STATUS
POWER
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
MOSFET
INPUT
CONTROL &
PROTECTION
CIRCUITS
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
LOAD
GROUND
RG
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT263B-01
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
Ground
mb
mb
B
I
2
Input
TOPFET
HSS
G
L
3
Battery (+ve supply)
Status
S
4
1 2 3 4 5
Front view
MBL267
5
Load
Fig. 2.
Fig. 3.
tab connected to pin 3
September 2002
1
Rev 2.000
Philips Semiconductors
Product specification
TOPFET high side switch
BUK209-50Y
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VBG
Continuous supply voltage
0
50
V
IL
Continuous load current
Total power dissipation
Storage temperature
Tmb ≤112˚C
Tmb ≤25˚C
-
-
12
56
A
PD
Tstg
Tj
W
˚C
˚C
-55
-
175
150
Continuous junction temperature1
Tsold
Mounting base temperature
during soldering
-
260
˚C
Reverse battery voltages2
Continuous reverse voltage
Peak reverse voltage
-VBG
-VBG
-
-
16
32
V
V
Application information
RI, RS
External resistors3
to limit input, status currents
3.2
-
kΩ
Input and status
II, IS
II, IS
Continuous currents
-5
5
mA
mA
Repetitive peak currents
Inductive load clamping
Non-repetitive clamping energy
δ ≤ 0.1, tp = 300 µs
IL = 5 A
-50
50
EBL
Tj = 150˚C prior to turn-off
-
100
mJ
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
-
2
kV
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
Thermal resistance4
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
-
-
-
1.8
60
2.2
75
K/W
K/W
in free air
1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
September 2002
2
Rev 2.000
Philips Semiconductors
Product specification
TOPFET high side switch
BUK209-50Y
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER
Clamping voltages
Battery to ground
CONDITIONS
MIN. TYP. MAX. UNIT
VBG
VBL
IG = 1 mA
50
50
18
20
55
55
23
25
65
65
28
30
V
V
V
V
Battery to load
IL = IG = 1 mA
IL = 10 mA
-VLG
-VLG
Negative load to ground
Negative load voltage1
IL = 5 A; tp = 300 µs
Supply voltage
battery to ground
VBG
Operating range2
5.5
-
35
V
Currents
Quiescent current3
9 V ≤ VBG ≤ 16 V
VLG = 0 V
IB
IL
-
-
-
0.1
-
20
2
µA
µA
µA
µA
mA
A
Tmb = 25˚C
Tmb = 25˚C
Tmb = 85˚C
Off-state load current4
VBL = VBG
-
20
1
-
0.1
2
IG
IL
Operating current5
Nominal load current6
IL = 0 A
-
4
VBL = 0.5 V
6
-
-
Resistances
VBG
IL
tp7
Tmb
RON
RON
On-state resistance
9 to 35 V
5 A
300 µs
300 µs
25˚C
150˚C
25˚C
-
-
-
-
45
-
60
120
75
mΩ
mΩ
mΩ
mΩ
On-state resistance
6 V
5 A
55
-
150˚C
150
RG
Internal ground resistance
IG = 10 mA
95
150
190
Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
September 2002
3
Rev 2.000
Philips Semiconductors
Product specification
TOPFET high side switch
BUK209-50Y
INPUT CHARACTERISTICS
9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
II
Input current
VIG = 5 V
20
5.5
-
90
7
160
µA
V
VIG
Input clamping voltage
Input turn-on threshold voltage
Input turn-off threshold voltage
Input turn-on hysteresis
Input turn-on current
II = 200 µA
8.5
VIG(ON)
VIG(OFF)
∆VIG
II(ON)
II(OFF)
2.4
2.1
0.3
-
3
V
1.5
-
-
V
-
100
-
V
VIG = 3 V
-
µA
µA
Input turn-off current
VIG = 1.5 V
10
-
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VSG
VSG
Status clamping voltage
IS = 100 µA
IS = 100 µA
5.5
7
-
8.5
1
V
V
V
Status low voltage
-
-
Tmb = 25˚C
Tmb = 25˚C
0.7
0.8
IS
IS
Status leakage current
VSG = 5 V
VSG = 5 V
-
-
-
0.1
7
15
1
µA
µA
mA
Status saturation current1
2
12
Application information
RS
External pull-up resistor
-
47
-
kΩ
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25 ˚C.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Open circuit detection
9 V ≤ VBG ≤ 35 V
IL(TO)
Low current detect threshold
Hysteresis
150
250
-
1000
750
mA
mA
Tj = 25˚C
500
∆IL(TO)
-
100
-
mA
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
September 2002
4
Rev 2.000
Philips Semiconductors
Product specification
TOPFET high side switch
BUK209-50Y
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Undervoltage
VBG(UV)
Low supply threshold voltage1
2
-
4.2
0.5
5.5
-
V
V
∆VBG(UV)
Hysteresis
Overvoltage
VBG(OV)
High supply threshold voltage2
Hysteresis
40
-
45
1
50
-
V
V
∆VBG(OV)
TRUTH TABLE
ABNORMAL CONDITIONS
DETECTED
LOAD
OUTPUT
OT
INPUT
SUPPLY
LOAD
STATUS
DESCRIPTION
UV
OV
X
0
LC
X
0
SC
X
0
L
X
0
0
1
0
0
0
X
0
0
X
0
X
1
OFF
ON
H
H
L
off
H
H
H
H
H
H
on & normal
0
1
0
ON
on & low current detect
supply undervoltage lockout
supply overvoltage shutdown
SC tripped
0
X
X
0
X
0
OFF
OFF
OFF
OFF
H
H
L
1
0
1
0
0
0
L
OT shutdown3
KEY TO ABBREVIATIONS
L
H
X
0
logic low
UV undervoltage
OV overvoltage
logic high
don’t care
condition not present
condition present
LC low current or open circuit load
SC short circuit
1
OT overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
September 2002
5
Rev 2.000
Philips Semiconductors
Product specification
TOPFET high side switch
BUK209-50Y
OVERLOAD PROTECTION CHARACTERISTICS
5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Overload protection
VBL = VBG
IL(lim)
Load current limiting
VBG ≥ 9 V
20
30
40
A
Short circuit load protection
VBL(TO)
td sc
Battery load threshold voltage1
VBG = 16 V
VBG = 35 V
8
15
-
10
20
12
25
V
V
Response time2
VBL > VBL(TO)
180
250
µs
Overtemperature protection
Tj(TO)
Threshold junction
temperature3
150
-
170
10
190
-
˚C
˚C
∆Tj(TO)
Hysteresis
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
During turn-on
from input going high
to 10% VL
td on
Delay time
-
-
45
70
µs
V/µs
dV/dton
Rate of rise of load voltage
30% to 70% VL
0.4
1.0
t on
Total switching time
to 90% VL
-
110
180
µs
During turn-off
from input going low
to 90% VL
td off
Delay time
-
-
-
50
0.7
75
80
1.1
120
µs
V/µs
µs
dV/dtoff
t off
Rate of fall of load voltage
Total switching time
70% to 30% VL
to 10% VL
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.
SYMBOL PARAMETER
CONDITIONS
VBG = 13 V
VBL = 13 V
VSG = 5 V
MIN. TYP. MAX. UNIT
Cig
Cbl
Csg
Input capacitance
Output capacitance
Status capacitance
-
-
-
15
200
11
20
300
15
pF
pF
pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. A graph showing VBL(TO) versus
VBG will be provided in the product specification. After short circuit protection has operated, the input voltage must be toggled low for the
switch to resume normal operation.
2 Measured from when the input goes high.
3 After cooling below the reset temperature the switch will resume normal operation.
September 2002
6
Rev 2.000
Philips Semiconductors
Product specification
TOPFET high side switch
BUK209-50Y
MECHANICAL DATA
Plastic single-ended package; heatsink mounted; 1 mounting hole;
SOT263B-01
5-lead TO-220 lead form option
E
p
A
1
A
∅ p
1
q
D
1
mounting
base
D
L
3
R
L
1
L
L
4
m
L
2
R
Q
1
5
e
b
w
M
c
Q
1
Q
2
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(2)
L
4
(1)
b
D
A
A
c
D
E
UNIT
mm
e
L
L
L
m
∅ p
p
q
Q
Q
Q
2
R
w
L
1
1
1
2
3
1
1
max.
4.5 1.39 0.85 0.7 15.8 6.4 10.3
4.1 1.27 0.70 0.4 15.2 5.9 9.7
9.8 5.9 5.2 2.4
9.7 5.3 5.0 1.6
0.8 3.8 4.3 3.0
0.6 3.6 4.1 2.7
1.7
0.5
2.0 4.5 8.2 0.5 0.4
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
5-lead (option)
TO-220
01-01-11
SOT263B-01
Fig.4. SOT263B package1 leadform 263B-01, pin 3 connected to mounting base.
1 Refer to mounting instructions for TO220 envelopes. Epoxy meets UL94 VO at 1/8". Net mass: 2 g
September 2002
7
Rev 2.000
Philips Semiconductors
Product specification
TOPFET high side switch
BUK209-50Y
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS1
PRODUCT
STATUS2
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
available on the Internet at URL http://www.semiconductors.philips.com.
September 2002
8
Rev 2.000
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