BUK7720-55A,127_技术文档

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Rev. 02 — 7 June 2004

Product data

M3D308

1. Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™¹technology, featuring very low on-state resistance.

Product availability:

BUK7720-55A in SOT186A (TO-220F).

2. Features

■ TrenchMOS™ technology

■ Q101 compliant

■ 150 °C rated

■ Standard level compatible.

3. Applications

■ Automotive and general purpose power switching:

◆ 12 V and 24 V loads

◆ Motors, lamps and solenoids.

4. Pinning information

Table 1: Pinning - SOT186A, simpliﬁed outline and symbol

1

Description

gate (g)

Simpliﬁed outline

Symbol

mb

2

drain (d)

d

s

3

source (s)

mb

mounting base;

isolated

g

mbb076

1

2 3

MBK110

SOT186A (TO-220F)

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter

Conditions

Typ

Max

55

Unit

V

V_DS

I_D

drain-source voltage (DC)

drain current (DC)

-

T_mb= 25 °C; V_GS= 10 V

T_mb= 25 °C

29

A

P_tot

T_j

total power dissipation

junction temperature

32

W

150

°C

R_DSon

drain-source on-state resistance

V_GS= 10 V; I_D= 25 A

T_j= 25 °C

15

-

20

37

mΩ

T_j= 150 °C

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

55

Unit

V

V_DS

V_DGR

V_GS

I_D

drain-source voltage (DC)

-

drain-gate voltage (DC)

gate-source voltage (DC)

drain current (DC)

R_GS= 20 kΩ

55

V

±20

29

V

T_mb= 25 °C; V_GS= 10 V;

A

Figure 2 and 3

T

_mb= 100 °C; V_GS= 10 V;

-

20

A

Figure 2

[1]

I_DM

peak drain current

T_mb= 25 °C; pulsed; t_p≤ 10 µs;

117

Figure 3

P_tot

T_stg

T_j

total power dissipation

storage temperature

T_mb= 25 °C; Figure 1

-

32

W

−55

+150

°C

operating junction temperature

Source-drain diode

I_DR

reverse drain current (DC)

peak reverse drain current

T_mb= 25 °C

-

29

A

I_DRM

T_mb= 25 °C; pulsed; t_p≤ 10 µs

117

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

unclamped inductive load; I_D= 29 A;

-

260

mJ

V_DS≤ 55 V; V_GS= 10 V; R_GS= 50 Ω;

starting T _j= 25 °C

[1] I_DMis limited by chip, not package.

9397 750 13202

Product data

Rev. 02 — 7 June 2004

2 of 12

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

03ne37

03ne36

120

P

I

der

(%)

100

der

(%)

100

80

60

40

20

0

80

60

40

20

0

25

50

75

100 125 150 175

o

0

25

50

75

100 125 150 175

o

T

( C)

mb

T

( C)

mb

V

_GS≥ 10 V

P_tot

P_der

=

× 100%

----------------------

P

I_D

°

tot(25 C)

I_der

=

× 100%

------------------

I

°

D(25 C)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

3

10

I

D

(A)

2

R

= V / I

DS

10

DSon

D

t

= 10 us

p

100 us

1 ms

10

t

p

P

δ =

D.C.

T

10 ms

1

100 ms

t

p

T

-1

10

2

10

1

10

V

(V)

DS

T_mb= 25 °C; I_DMis single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 13202

Product data

Rev. 02 — 7 June 2004

3 of 12

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter

Conditions

Min Typ Max Unit

R_th(j-mb)thermal resistance from junction to

mounting base

Figure 4

-

3.9 K/W

R_th(j-a)

thermal resistance from junction to ambient vertical in still air

-

55

-

K/W

7.1 Transient thermal impedance

10

Z

th(j-mb)

(K/W)

δ = 0.5

1

-1

10

t

p

P

δ =

T

-2

t

p

T

-3

10

-6

-5

10

-4

10

-3

10

-2

10

-1

10

1

10

t

(s)

p

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 13202

Product data

Rev. 02 — 7 June 2004

4 of 12

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

8. Characteristics

Table 5: Characteristics

T_j= 25 °C unless otherwise speciﬁed

Symbol

Static characteristics

V_(BR)DSSdrain-source breakdown

voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_D= 0.25 mA; V_GS= 0 V

T_j= 25 °C

55

50

-

V

T_j= −55 °C

V_GS(th)

gate-source threshold voltage I_D= 1 mA; V_DS= V_GS

Figure 9

T_j= 25 °C

;

2

3

-

4

V

T_j= 150 °C

T_j= −55 °C

1.2

-

4.4

I_DSS

drain-source leakage current V_DS= 55 V; V_GS= 0 V

T_j= 25 °C

T_j= 150 °C

-

0.05

10

µA

nA

-

500

100

I_GSS

gate-source leakage current V_GS= ±20 V; V_DS= 0 V

2

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 25 A;

Figure 7 and 8

T_j= 25 °C

-

15

-

20

37

mΩ

T_j= 150 °C

Dynamic characteristics

Q_g(tot)

Q_gs

Q_gd

C_iss

C_oss

C_rss

t_d(on)

t_r

total gate charge

V_GS= 10 V; V_DD= 44 V;

I_D= 25 A; Figure 14

-

29

-

nC

pF

ns

gate-to-source charge

gate-to-drain (Miller) charge

input capacitance

output capacitance

reverse transfer capacitance

turn-on delay time

rise time

6

-

14

-

V_GS= 0 V; V_DS= 25 V;

f = 1 MHz; Figure 12

1200

290

180

15

1590

360

240

V_DD= 30 V; R_L= 1.2 Ω;

V_GS= 5 V; R_G= 10 Ω

-

74

ns

t_d(off)

t_f

turn-off delay time

fall time

70

ns

40

ns

L_d

internal drain inductance

from drain lead 6 mm from

package to centre of die

4.5

nH

L_s

internal source inductance

from source lead 6 mm from

package to source bond pad

-

7.5

-

nH

V

Source-drain diode

V_SD

source-drain (diode forward) I_S= 15 A; V_GS= 0 V;

0.85

1.2

voltage

Figure 15

t_rr

reverse recovery time

recovered charge

I_S= 20 A; dI_S/dt = −100 A/µs

V_GS= −10 V; V_DS= 30 V

-

45

-

ns

Q_r

110

nC

9397 750 13202

Product data

Rev. 02 — 7 June 2004

5 of 12

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

03nc62

03nc63

30

200

V

(V) =

20

14

12

11

GS

I

D

R

DSon

(mΩ)

180

(A)

160

140

120

100

80

25

10

9.0

8.5

8.0

7.5

7.0

20

15

10

60

6.5

40

6.0

5.5

5.0

4.5

20

0

5

10

15

20

25

0

2

4

6

8

10

(V)

V

(V)

GS

DS

T_j= 25 °C; t_p= 300 µs

T_j= 25 °C; I_D= 25 A

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

03nc24

2.2

03nc64

45

a

R

2

DSon

(mΩ)

1.8

1.6

1.4

1.2

1

V

(V) =

10

5.5

6.5

7

6

8

GS

40

35

30

25

20

15

0.8

0.6

0.4

0.2

0

-60

-20

20

60

100

140

180

0

50

100

150

o

T ( C)

I

(A)

j

D

T_j= 25 °C

R_DSon

a =

---------------------------

R_{DSon(25 C)}

°

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 13202

Product data

Rev. 02 — 7 June 2004

6 of 12

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

03aa32

03aa35

5

V_GS(th)

(V)

10^-1

I_D

(A)

10^-2

4

max

min

typ

max

3

10^-3

10^-4

10^-5

10^-6

typ

min

2

1

0

-60

0

60

120

180

0

2

4

6

V

_GS(V)

T ( C)

°

j

I_D= 1 mA; V_DS= V_GS

T_j= 25 °C; V_DS= V_GS

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

2500

03nc60

25

C

,

iss

g

oss,

fs

C

(S)

rss

2000

1500

1000

500

0

20

(pF)

C

iss

15

10

5

oss

C

rss

0

-2

-1

10

2

10

1

10

0

20

40

60

80

V

(V)

I

(A)

DS

D

T_j= 25 °C; V_DS= 25 V

V_GS= 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values.

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

9397 750 13202

Product data

Rev. 02 — 7 June 2004

7 of 12

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

03ne22

120

03nc59

10

I

D

V

(A)

100

GS

(V)

8

6

4

2

0

V

= 14 V

V

= 44 V

DD

80

60

40

20

o

C

T = 150

j

C

T = 25

j

0

2

4

6

8

10

(V)

0

10

20

30

40

V

Q

(nC)

G

GS

V_DS= 25 V

T_j= 25 °C; I_D= 25 A

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

03ne23

100

I

S

(A)

80

o

T = 150

C

j

60

40

20

0

o

T = 25

j

C

0.0

0.5

1.0

1.5

V

(V)

SD

V_GS= 0 V

Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

9397 750 13202

Product data

Rev. 02 — 7 June 2004

8 of 12

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

9. Package outline

Plastic single-ended package; isolated heatsink mounted;

1 mounting hole; 3 lead TO-220 'full pack'

SOT186A

E

P

A

1

q

D

1

mounting

base

T

D

j

L

2

1

K

Q

b

1

L

2

1

2

3

b

c

w

M

e

1

0

5

10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

(2)

L

A

b

c

D

1

E

e

1

j

K

L

P

Q

q

T

w

b

UNIT

mm

2

1

2

max.

1.1

0.9

1.4

1.0

2.7

1.7

0.6 14.4 3.30

0.4 13.5 2.79

2.6

2.3

4.6 2.9

4.0 2.5

0.9

0.7

3.0

2.6

0.7 15.8 6.5 10.3

0.4 15.2 6.3 9.7

3.2

3.0

3

5.08

2.54

2.5

0.4

Notes

1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.

2. Both recesses are 2.5 × 0.8 max. depth

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

02-03-12

02-04-09

SOT186A

3-lead TO-220F

Fig 16. SOT186A.

9397 750 13202

Product data

Rev. 02 — 7 June 2004

9 of 12

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

10. Revision history

Table 6: Revision history

Rev Date

CPCN

-

Description

02 20040607

Product data (9397 750 13202)

Modiﬁcations:

Latest version of package outline imported into data sheet.

•

01 20010219

-

Product speciﬁcation (9397 750 08003)

9397 750 13202

Product data

Rev. 02 — 7 June 2004

10 of 12

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

11. Data sheet status

[1]

[2][3]

Level Data sheet status

Product status

Deﬁnition

I

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II

Preliminary data

Qualiﬁcation

Production

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

12. Deﬁnitions

13. Disclaimers

Short-form speciﬁcation — The data in

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

a

short-form speciﬁcation is

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

licence or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

Contact information

For additional information, please visit http://www.semiconductors.philips.com.

For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.

Fax: +31 40 27 24825

11 of 12

9397 750 13202

Product data

Rev. 02 — 7 June 2004

BUK7720-55A

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

Contents

1

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Transient thermal impedance . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2

3

4

5

6

7

7.1

8

9

10

11

12

13

Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner.

The information presented in this document does not form part of any quotation or

contract, is believed to be accurate and reliable and may be changed without notice. No

liability will be accepted by the publisher for any consequence of its use. Publication

thereof does not convey nor imply any license under patent- or other industrial or

intellectual property rights.

Date of release: 7 June 2004

Document order number: 9397 750 13202


型号：	BUK7720-55A,127
厂家：	NXP
描述：	BUK7720-55A 局域网开关脉冲晶体管
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