BUK7L06-34ARC [NXP]
TrenchPLUS standard level FET; TrenchPLUS标准水平FET
| 型号： | BUK7L06-34ARC |
| 厂家： | 
NXP |
| 描述： | TrenchPLUS standard level FET |
| 文件： | 总14页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK7L06-34ARC
TrenchPLUS standard level FET
Rev. 03 — 3 December 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, integral gate
resistor, ESD protection diodes and clamping diodes that are guaranteed to prevent
the MOSFET avalanching.
1.2 Features
■ ESD and overvoltage protection
■ Internal gate resistor
■ Q101 compliant
■ On-state resistance 5.1 mΩ (typ).
1.3 Applications
■ 12 V loads
■ Motors, lamps and solenoids.
1.4 Quick reference data
■ VDSR(CL) = 41 V (typ)
■ ID ≤ 147 A
■ RDSon = 5.1 mΩ (typ)
■ Ptot ≤ 250 W.
2. Pinning information
Table 1:
Pinning - SOT78C, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1
2
3
gate (g)
mb
d
drain (d)
source (s)
g
mb mounting base,
connected to drain (d)
MBL521
s
1
2 3
MBL370
SOT78C (TO-220)
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BUK7L06-34ARC
TO-220
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads. SOT78C
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
34
Unit
V
[1]
[1]
[1]
[2]
[3]
[2]
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
-
-
-
-
-
-
-
VDGR
VGS
RGS = 20 kΩ
34
V
±20
147
75
V
ID
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
A
A
Tmb = 100 °C; VGS = 10 V; Figure 2
103
590
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
A
Figure 3
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
tp = 5 ms; δ = 0.01
continuous
-
250
50
W
IDG(CL)
IGS(CL)
drain-gate clamping current
gate-source clamping current
-
mA
mA
mA
°C
-
10
tp = 5 ms; δ = 0.01
-
50
Tstg
Tj
storage temperature
junction temperature
−55
−55
+175
+175
°C
Source-drain diode
[2]
[3]
IDR
reverse drain current (DC)
Tmb = 25 °C
-
-
-
147
75
A
A
A
IDRM
peak reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
590
Avalanche ruggedness
EDS(CL)S non-repetitive drain-source clamped clamped inductive load; ID = 75 A;
energy DS ≤ 34 V; VGS = 10 V; starting
-
1.0
J
V
Tj = 25 °C
Electrostatic discharge
Vesd electrostatic discharge voltage; all
pins
human body model; C = 100 pF;
R = 1.5 kΩ
-
-
8
8
kV
kV
human body model; C = 250 pF;
R = 1.5 kΩ
[1] Voltage is limited by clamping.
[2] Current is limited by power dissipation chip rating.
[3] Continuous current is limited by package.
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
2 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03na19
03nj41
120
150
P
der
(%)
I
D
(A)
80
40
0
100
Capped at 75 A due to package
50
0
0
50
100
150
T
200
0
50
100
150
200
(°C)
(°C)
T
mb
mb
VGS ≥ 10 V
Ptot
Pder
=
× 100%
-----------------------
P
°
tot(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
03nj39
3
10
I
Limit R
DSon
= V
/ I
DS D
D
t
= 10 µs
p
(A)
100 µs
1 ms
2
10
Capped at 75 A due to package
DC
10 ms
10
100 ms
1
-1
10
2
10
1
10
V
(V)
DS
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
3 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
5. Thermal characteristics
Table 4:
Symbol Parameter
Rth(j-a) thermal resistance from junction to
ambient
Thermal characteristics
Conditions
Min
Typ
Max Unit
- K/W
vertical in still air
-
60
Rth(j-mb) thermal resistance from junction to
mounting base
Figure 4
-
0.33 0.60 K/W
5.1 Transient thermal impedance
03nj40
1
Z
δ = 0.5
th(j-mb)
(K/W)
0.2
-1
10
0.1
0.05
0.02
-2
10
t
p
P
δ =
T
single shot
t
t
p
T
t
10-3
-6
-5
10
-4
10
-3
10
-2
10
-1
10
10
1
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
4 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
6. Characteristics
Table 5:
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
Characteristics
Conditions
Min
Typ
Max
Unit
V(BR)DG
drain-gate zener breakdown ID = 2 mA; VGS = 0 V
voltage
Tj = 25 °C
34
34
-
-
45
45
-
V
V
V
Tj = −55 °C
-
[1]
VDSR(CL)
VGS(th)
drain-source clamping
voltage (DC)
IGS(CL) = −2 mA; ID = 1 A
Figure 16 and 17
41
gate-source threshold voltage ID = 1 mA; VDS = VGS
Figure 9
;
Tj = 25 °C
Tj = 175 °C
Tj = 150 °C
Tj = −55 °C
2.2
1.2
1.5
-
3
-
3.8
-
V
V
V
V
-
-
-
4.2
IDSS
drain-source leakage current VDS = 16 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
-
0.1
5
2
µA
µA
µA
V
-
50
250
-
-
30
22
V(BR)GSS
IGSS
gate-source breakdown
voltage
IG = ±1 mA;
20
−55 °C < Tj < +175 °C
gate-source leakage current VGS = ±10 V; VDS = 0 V
Tj = 25 °C
-
-
5
-
1000
50
nA
Tj = 175 °C
µA
VGS = 16 V; VDS = 0 V
Tj = 175 °C
-
-
150
µA
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 30 A;
Figure 7 and 8
Tj = 25 °C
-
-
5.1
-
6
mΩ
mΩ
mΩ
Ω
Tj = 175 °C
11.4
5.3
-
VGS = 16 V; ID = 30 A
4.0
11
RG
Internal gate resistor
-
Dynamic characteristics
Qg(tot)
Qgs
total gate charge
VGS = 10 V; VDS = 27 V;
ID = 25 A; Figure 14
-
-
-
-
-
-
82
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain (Miller) charge
input capacitance
15
-
Qgd
31
-
Ciss
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
3400
1080
660
4533
1296
904
Coss
Crss
output capacitance
reverse transfer capacitance
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
5 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
Table 5:
Characteristics…continued
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
27
Max
Unit
nS
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
-
-
-
-
-
-
-
-
-
-
108
196
167
4.5
nS
turn-off delay time
fall time
nS
nS
Ld
internal drain inductance
measured from drain lead
6 mm from package to
center of die
nH
measured from contact
screw on mounting base to
center of die SOT78C
-
-
3.5
7.5
-
-
nH
nH
Ls
internal source inductance
measured from source lead
to source bond pad
Source-drain diode
VSD
source-drain (diode forward) IS = 10 A; VGS = 0 V;
-
0.85
1.2
V
voltage
Figure 15
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
-
-
62
44
-
-
ns
Qr
nC
[1] Independent testing of MOSFET and clamping diodes guarantees against avalanche.
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
6 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nj35
03nj36
350
12
20
9
Label is V
(V)
GS
I
D
8
(A)
R
(mΩ)
10
DSon
7.5
7
280
9
210
140
70
6.5
6
6
3
5.5
5
4.5
4
0
0
2
4
6
8
10
(V)
5
10
15
20
V
(V)
GS
V
DS
Tj = 25 °C; tp = 300 µs
Tj = 25 °C; ID = 30 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03aa27
03nj37
14
2
5
Label is V
(V)
GS
a
R
(mΩ)
DSon
6
7
1.5
10
8
1
0.5
0
10
6
2
20
0
100
200
300
400
-60
0
60
120
180
I
(A)
D
°
T ( C)
j
Tj = 25 °C; tp = 300 µs
RDSon
a =
----------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
7 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nh87
-1
-2
-3
-4
-5
-6
10
03nh86
5
I
D
(A)
V
GS(th)
max
(V)
10
4
typ
min
typ
max
10
10
10
10
3
min
2
1
0
0
2
4
6
-60
0
60
120
180
V
(V)
GS
T (°C)
j
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nj33
03nj38
80
6000
g
(S)
fs
C
(pF)
C
C
iss
60
4000
oss
40
20
0
2000
C
rss
0
-1
2
10
0
20
40
60
80
10
1
10
I
(A)
V
(V)
D
DS
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
8 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nj32
03nj34
100
10
GS
V
(V)
I
D
(A)
8
6
4
2
0
75
V
= 14 V
V
= 27 V
DD
DD
50
25
T = 175 °C
T = 25 °C
j
j
0
0
2
4
6
0
25
50
75
100
V
(V)
GS
Q
(nC)
G
VDS = 25 V
Tj = 25 °C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03nj31
100
I
S
(A)
75
50
T = 175 C
°
j
25
0
T = 25 C
°
j
0.0
0.3
0.6
0.9
1.2
V
(V)
SD
VGS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
9 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nj57
03nj56
42.0
43
T = 175 °C
j
V
DSR(CL)
(V)
V
DSR(CL)
(V)
T = 175 °C
j
T = 25 °C
42
41
40
39
j
T = - 55 °C
41.5
41.0
40.5
j
T = 25 °C
j
T = −55 °C
j
0
2
4
6
8
10
2
3
0
1
−I
GS(CL)
(mA)
I
(A)
D
IGD(CL) = −2 mA
ID = 10 A
Fig 16. Drain-source clamping voltage as a function of
drain current; typical values.
Fig 17. Drain-source clamping voltage as a function of
gate-source clamping current; typical values.
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
10 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads
SOT78C
E
p
A
A
1
mounting
base
q
D
1
q
1
D
q
2
L
Q
1
L
b
1
1
2
3
b
c
e
e
1
H
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
e
L
A
b
D
E
L
D
e
H
A
1
c
UNIT
mm
p
Q
q
q
q
2
1
1
1
1
1
4.58
4.31
1.33
1.21
0.87
0.76
1.33
1.21
0.44 15.07 6.47 10.40 2.64
0.33 14.80 6.22 10.00 2.44
5.16 6.03 14.00 6.10 3.90
5.00 5.76 13.50 5.58 3.78
2.72
2.40
2.95
2.69
3.80 12.40
3.42 12.00
Notes
1. Terminals in this zone are not tinned.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
01-12-11
03-01-21
SOT78C
3-lead TO-220
Fig 18. SOT78C (TO-220).
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
11 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
8. Revision history
Table 6:
Revision history
CPCN
Rev Date
Description
03 20031203
-
Product data (9397 750 12162)
• Avalanche Ruggedness parameter description in Section 4 changed from:
‘non-repetitive drain-source avalanche energy’ to ‘non-repetitive drain-source clamp
energy’.
02 20030521
01 20030414
-
-
Product data (9397 750 11471)
• Typical values of IDSS added to characteristics table, Section 6.
Product data (9397 750 11177)
9397 750 12162
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 — 3 December 2003
12 of 14
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
9. Data sheet status
Level Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Trademarks
— TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
13 of 14
9397 750 12162
Product data
Rev. 03 — 3 December 2003
BUK7L06-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
5.1
6
7
8
9
10
11
12
© Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 3 December 2003
Document order number: 9397 750 12162
相关型号：
©2020 ICPDF网 联系我们和版权申明