BUT11APX-1200 [NXP]

Silicon Diffused Power Transistor; 硅扩散型功率晶体管


型号：	BUT11APX-1200
厂家：	NXP
描述：	Silicon Diffused Power Transistor 硅扩散型功率晶体管晶体晶体管
文件：	总7页 (文件大小：63K)
中文：	中文翻译
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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX-1200

GENERAL DESCRIPTION

Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack

envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CBO

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1200

550

Collector-Base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

P_tot

T_hs≤ 25 ˚C

V_CEsat

h_FEsat

t_f

Collector-emitter saturation voltage

DC current gain

I_C= 2 A; I_B= 0.4 A

I_C= 3 A; V_CE= 5 V

I_C= 2.5 A; I_B1= 0.5 A

0.15

15.5

170

1.0

Fall time

300

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

case isolated

2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

V_CBO

I_C

Collector to emitter voltage

V_BE= 0 V

1200

550

1200

Collector to emitter voltage (open base)

Collector to base voltage (open emitter)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

Base current peak value

Total power dissipation

Storage temperature

Junction temperature

I_B

I_BM

P_tot

T_stg

T_j

T_hs≤ 25 ˚C

˚C

-65

150

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Junction to heatsink

Junction to ambient

with heatsink compound

in free air

3.95

K/W

April 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX-1200

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal

2500

three terminals to external

heatsink

waveform;

R.H. ≤ 65% ; clean and dustfree

Capacitance from T2 to external f = 1 MHz

heatsink

STATIC CHARACTERISTICS

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_CES

Collector cut-off current ¹

V_BE= 0 V; V_CE= V_CESMmax

T_j= 125 ˚C

1.0

2.0

;

I_EBO

V_CEOsust

Emitter cut-off current

V_EB= 7 V; I_C= 0 A

0.1

Collector-emitter sustaining voltage I_B= 0 A; I_C= 10 mA;

L = 25 mH

550

V_CEsat

V_BEsat

h_FE

h_FEsat

Collector-emitter saturation voltage I_C= 2.0 A; I_B= 0.4 A

0.15

0.91

18.5

15.5

1.0

1.5

Base-emitter saturation voltage

DC current gain

I_C= 2.0 A; I_B= 0.4 A

I_C= 1 mA; V_CE= 5 V

I_C= 500 mA; V_CE= 5 V

I_C= 2 A; V_CE= 5 V

DC current gain

I_C= 3.0 A; V_CE= 5 V

DYNAMIC CHARACTERISTICS

T_hs= 25 ˚C unless otherwise specified8

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

Switching times (resistive load)

I_Con= 2.5 A; I_Bon= -I_Boff= 0.5 A;

R_L= 75 ohms; V_BB2= 4 V;

t_on

t_s

t_f

Turn-on time

Turn-off storage time

Turn-off fall time

0.5

0.3

µs

Switching times (inductive load)

I_Csat= 2.5 A; I_B1= 0.5 A; L_B= 1 µH;

-V_BB= 5 V

t_s

t_f

Turn-off storage time

Turn-off fall time

1.5

300

µs

170

Switching times (inductive load)

I_Csat= 2.5 A; I_B1= 0.5 A; L_B= 1 µH;

-V_BB= 5 V; T_j= 100 ˚C

t_s

t_f

Turn-off storage time

Turn-off fall time

1.8

300

µs

1 Measured with half sine-wave voltage (curve tracer).

April 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX-1200

ICsat

90 %

+ 50v

100-200R

10 %

Horizontal

Oscilloscope

Vertical

ton

toff

IB1

10 %

300R

tr 30ns

30-60 Hz

-IB2

Fig.1. Test circuit for V_CEOsust

Fig.4. Switching times waveforms with resistive load.

IC / mA

VCC

250

200

IBon

100

T.U.T.

-VBB

min

VCE / V

VCEOsust

Fig.2. Oscilloscope display for V_CEOsust

Fig.5. Test circuit inductive load.

V_CC= 300 V; -V_BE= 5 V; L_C= 200 uH; L_B= 1 uH

ICsat

90 %

VCC

10 %

VIM

T.U.T.

IB1

- IB2

Fig.3. Test circuit resistive load. V_IM= -6 to +8 V

V_CC= 250 V; t_p= 20 µs; δ = t_p/ T = 0.01.

Fig.6. Switching times waveforms with inductive load.

R_Band R_Lcalculated from I_Conand I_Bonrequirements.

April 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX-1200

Normalised Power Derating

VBEsat/V

PD%

120

110

100

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Tmb /

100

120

140

0.1

IC/A

Fig.7. Normalised power dissipation.

PD% = 100⋅PD/PD _25˚C= f (T_hs)

Fig.10. Base-Emitter saturation voltage.

Solid lines = typ values, V_BEsat= f(IC); at IC/IB =4.

h_FE

VCEsat/V

100

0.5

0.4

0.3

0.2

0.1

0.0

Tj = 25 C

0.1

0.01

0.1

IC/A

IC / A

Fig.8. Typical DC current gain. h_FE= f(I_C)

parameter V_CE

Fig.11. Collector-Emitter saturation voltage.

Solid lines = typ values, V_CEsat= f(IC); at IC/IB =4.8

Zth / (K/W)

BU1706AX

VCEsat/V

2.0

0.5

1.6

0.2

0.1

IC=1A

0.05

1.2

0.8

0.4

0.0

0.1

0.02

t_p

D =

0.01

0.001

D=0

1u 10u 100u 1m 10m 100m

t / s

10 100

0.01

0.10

1.00

10.00

IB/A

Fig.9. Collector-Emitter saturation voltage.

Solid lines = typ values, V_CEsat= f(IB); T_j=25˚C.

Fig.12. Transient thermal impedance.

Z_{th j-hs}= f(t); parameter D = t_p/T

April 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX-1200

IC (A)

VCC

VCL(RBSOAR)

PROBE POINT

IBon

T.U.T.

-VBB

200

400

600 800

VCEclamp (V)

1,000

1,200

1,400

Fig.13. Reverse bias safe operating area. T_j≤ T_{j max}

Fig.14. Test circuit for reverse bias safe operating

area.

V_cl≤ 1200V; V_cc= 150V; V_BB= -5V; L_B= 1µH;L_c=

200µH

April 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX-1200

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

10.3

max

4.6

max

3.2

3.0

2.9 max

2.8

Recesses (2x)

2.5

6.4

0.8 max. depth

15.8

max

seating

plane

15.8

max.

3 max.

not tinned

2.5

13.5

min.

0.4

1.0 (2x)

0.6

2.5

0.9

0.7

2.54

0.5

5.08

1.3

Fig.15. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

April 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX-1200

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

April 1999

Rev 1.000

BUT11APX-1200 [NXP]

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