BUT11F [FAIRCHILD]
High Voltage Power Switching Applications; 高压功率开关应用
| 型号： | BUT11F |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Voltage Power Switching Applications |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUT11F/11AF
High Voltage Power Switching Applications
TO-220F
1.Base 2.Collector 3.Emitter
1
NPN Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
CBO
: BUT11F
: BUT11AF
850
1000
V
V
CEO
: BUT11F
: BUT11AF
400
450
V
V
Emitter-Base Voltage
Collector Current (DC)
9
V
A
EBO
I
I
I
I
5
C
*Collector Current (Pulse)
Base Current (DC)
10
A
CP
B
2
A
*Base Current (Pulse)
4
40
A
BP
P
Collector Dissipation (T =25°C)
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
(sus)
* Collector-Emitter Sustaining Voltage
CEO
: BUT11F
: BUT11AF
I
= 100mA, I = 0
400
450
V
V
C
B
I
I
Collector Cut-off Current
: BUT11F
CES
V
V
= 850V, V = 0
1
1
mA
mA
CE
CE
BE
: BUT11AF
= 1000V, V = 0
BE
Emitter Cut-off Current
V
= 9V, I = 0
10
mA
EBO
BE
C
V
(sat)
Collector-Emitter Saturation Voltage
: BUT11F
CE
I
I
= 3A, I = 0.6A
= 2.5A, I = 0.5A
B
1.5
1.5
V
V
C
C
B
: BUT11AF
V
(sat)
Base-Emitter Saturation Voltage
: BUT11F
BE
I
I
= 3A, I = 0.6A
= 2.5A, I = 0.5A
B
1.3
1.3
V
V
C
C
B
: BUT11AF
t
t
Turn On Time
Storage Time
Fall Time
V
= 250V, I = 2.5A
1
4
µs
µs
µs
ON
CC
C
I
= -I = 0.5A
B1
B2
STG
F
R = 100Ω
L
t
0.8
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Typ
Max
3.125
Units
R
Thermal Resistance, Junction to Case
°C/W
θjC
©2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
Typical Characteristics
1000
10
VCE = 5V
IC = 5 IB
100
10
1
1
0.1
VCE(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
10
8
10
IC = 5 IB
VBE(sat)
1
6
4
0.1
2
BUT11AF
1000 1200
BUT11F
0.01
0.01
0
0.1
1
10
0
200
400
600
800
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Reverse Biased Safe Operating Area
80
70
60
50
40
30
20
10
0
10
Ic MAX (Continuous)
1
0.1
BUT11AF
BUT11F
0.01
0
25
50
75
100
125
150
175
1
10
100
1000
TC[OC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Power Derating
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
Package Demensions
TO-220F
2.54 ±0.20
10.16 ±0.20
(7.00)
ø3.18 ±0.10
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
(30
°
)
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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