BUT18 [NXP]
Silicon diffused power transistors; 扩散硅功率晶体管
| 型号： | BUT18 |
| 厂家： | 
NXP |
| 描述： | Silicon diffused power transistors |
| 文件： | 总12页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT18; BUT18A
Silicon diffused power transistors
1999 Jun 11
Product specification
Supersedes data of 1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
dbook, halfpage
APPLICATIONS
2
• Converters
• Inverters
1
• Switching regulators
• Motor control systems.
3
MBB008
MBK106
1
2 3
PINNING
PIN
DESCRIPTION
base
1
2
collector; connected to
mounting base
Fig.1 Simplified outline (TO-220AB) and symbol.
3
emitter
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VCESM
collector-emitter peak voltage
BUT18
VBE = 0
850
V
V
BUT18A
1000
VCEO
collector-emitter voltage
BUT18
open base
see Fig.7
400
450
1.5
4
V
BUT18A
V
VCEsat
ICsat
IC
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
A
see Fig.2
see Fig.2
6
A
ICM
Ptot
tf
12
110
A
Tmb ≤ 25 °C; see Fig.4
W
µs
resistive load; see Figs 10 and 11 0.8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
1.15
K/W
1999 Jun 11
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter peak voltage
BUT18
VBE = 0
−
−
850
V
V
BUT18A
1000
VCEO
collector-emitter voltage
BUT18
open base
−
−
−
−
−
−
−
−
400
450
4
V
V
A
A
A
A
A
BUT18A
ICsat
IC
ICM
IB
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
see Fig.2
see Fig.2
6
12
3
IBM
Ptot
Tstg
Tj
6
Tmb ≤ 25 °C; see Fig.4
110
+150
150
W
−65
°C
°C
−
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCEOsust
collector-emitter sustaining
voltage
IC = 0.1 A; IBoff = 0; L = 25 mH; see
Figs 5 and 6
BUT18
400
450
−
−
−
−
−
−
−
−
V
BUT18A
−
V
VCEsat
VBEsat
ICES
collector-emitter saturation voltage IC = 4 A; IB = 0.8 A; see Fig.7
1.5
1.3
1
V
base-emitter saturation voltage
collector-emitter cut-off current
IC = 4 A; IB = 0.8 A; see Fig.8
−
V
VCE = VCESMmax; VBE = 0; note 1
−
mA
mA
VCE = VCESMmax; VBE = 0;
−
2
Tj = 125 °C; note 1
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 9 V; IC = 0
−
−
10
35
35
mA
VCE = 5 V; IC = 10 mA; see Fig.9
10
10
18
20
VCE = 5 V; IC = 1 A; see Fig.9
Switching times resistive load (see Figs 10 and 11)
ton
ts
turn-on time
storage time
fall time
ICon = 4 A; IBon = −IBoff = 800 mA
ICon = 4 A; IBon = −IBoff = 800 mA
ICon = 4 A; IBon = −IBoff = 800 mA
−
−
−
−
−
−
1
µs
µs
µs
4
tf
0.8
Switching times inductive load (see Figs 10 and 13)
ts
tf
storage time
fall time
ICon = 4 A; IBon = 800 mA; VCL = 250 V −
ICon = 4 A; IBon = 800 mA; VCL = 250 V −
1.6
2.5
µs
150
400
ns
Note
1. Measured with a half-sinewave voltage (curve tracer).
1999 Jun 11
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
MGB921
2
10
I
C
(A)
I
CM max
10
I
C max
II
1
I
−1
10
DC
−2
10
BUT18
BUT18A
−3
10
−4
10
2
3
4
1
10
10
10
10
V
(V)
CE
Tmb = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
4
1999 Jun 11
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
MGB862
10
Z
th j−mb
(K/W)
δ = 1
0.75
1
0.50
0.33
0.20
0.10
−1
10
0.05
0.02
0.01
0
−2
10
−3
−2
−1
2
3
10
10
10
1
10
10
10
t
(ms)
p
Fig.3 Transient thermal impedance.
MGD283
120
handbook, halfpage
P
tot max
handbook, halfpage
(%)
+ 50 V
100 to 200 Ω
80
L
horizontal
oscilloscope
vertical
40
300 Ω
1 Ω
6 V
30 to 60 Hz
MGE252
0
0
50
100
150
o
T
( C)
mb
Fig.5 Test circuit for collector-emitter
sustaining voltage.
Fig.4 Power derating curve.
1999 Jun 11
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
MGB884
2
handbook, halfpage
(1)
(2)
(3)
V
CEsat
(V)
MGE239
I
handbook, halfpage
C
(mA)
250
1
200
100
0
0
10
V
(V)
−2
−1
CE
10
1
10
min
I
(A)
B
V
CEOsust
Tj = 25 °C.
(1) IC = 1 A.
(2)
IC = 2 A.
(3) IC = 4 A.
Fig.6 Oscilloscope display for collector-emitter
sustaining voltage.
Fig.7 Collector-emitter saturation voltage as a
function of base current.
MGB880
MBC097
2
10
1.5
handbook, halfpage
handbook, halfpage
V
BEsat
(V)
h
FE
V
= 5 V
1V
CE
(1)
(2)
1
10
(3)
1
10
0.5
10
−2
−1
2
−2
−1
10
1
10
10
10
1
10
I
(A)
I
(A)
C
B
Tj = 25 °C.
(1) C = 4 A.
I
(2) IC = 2 A.
(3) IC = 1 A.
VCE = 5 V; Tj = 25 °C.
Fig.8 Base-emitter saturation voltage as a
function of base current.
Fig.9 DC current gain; typical values.
1999 Jun 11
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
MBB731
handbook, halfpage
90%
t ≤30 ns
r
I
B on
I
B
10%
V
handbook, halfpage
CC
t
I
B off
R
L
V
R
IM
0
B
I
C on
D.U.T.
90%
t
p
I
MGE244
C
T
10%
t
t
f
t
on
t
s
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
tr ≤ 30 ns.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.11 Switching time waveforms with
resistive load.
Fig.10 Test circuit resistive load.
handbook, halfpage
t
r
I
90%
10%
B on
I
B
V
C
handbook, halfpage
CC
t
L
−I
B off
V
+I
CL
B
L
B
I
C on
D.U.T.
90%
10%
−V
BE
MGE246
I
C
t
t
f
t
s
t
VCL = up to 1000 V; VCC = 30 V; VBE = −5 V; LB = 1 µH (0 for reverse
bias SOAR); LC = 200 µH.
MGE238
off
Fig.12 Test circuit inductive load and reverse
bias SOAR.
Fig.13 Switching times waveforms with
inductive load.
1999 Jun 11
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
PACKAGE OUTLINE
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
P
A
A
1
q
D
1
D
(1)
L
L
1
2
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
(1)
L
e
2
A
b
D
E
L
D
L
1
A
c
UNIT
P
q
Q
1
1
1
max.
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-06-11
SOT78
TO-220AB
1999 Jun 11
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 11
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
NOTES
1999 Jun 11
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
NOTES
1999 Jun 11
11
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© Philips Electronics N.V. 1999
SCA66
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Printed in The Netherlands
135002/02/pp12
Date of release: 1999 Jun 11
Document order number: 9397 750 06092
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