BY329X-1200,127 [NXP]

DIODE 7 A, 1200 V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3, Rectifier Diode;
BY329X-1200,127
型号: BY329X-1200,127
厂家: NXP    NXP
描述:

DIODE 7 A, 1200 V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3, Rectifier Diode

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Philips Semiconductors  
Product specification  
Rectifier diodes  
fast, soft-recovery  
BY329F, BY329X series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
VR = 800 V/ 1000 V/ 1200 V  
• Soft recovery characteristic  
• High thermal cycling performance  
• Isolated mounting tab  
k
1
a
2
IF(AV) = 8 A  
IFSM 65 A  
trr 145 ns  
GENERAL DESCRIPTION  
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft  
recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.  
The BY329F series is supplied in the conventional leaded SOD100 package.  
The BY329X series is supplied in the conventional leaded SOD113 package.  
PINNING  
SOD100  
SOD113  
PIN  
DESCRIPTION  
cathode  
anode  
isolated  
case  
case  
1
2
tab  
1
2
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
BY329F / BY329X  
MIN.  
MAX.  
UNIT  
-800 -1000 -1200  
VRSM  
Peak non-repetitive reverse  
-
800  
1000 1200  
V
voltage  
VRRM  
VRWM  
Peak repetitive reverse voltage  
Crest working reverse voltage  
-
-
800  
600  
1000 1200  
800  
8
V
V
1000  
IF(AV)  
Average forward current1  
square wave; δ = 0.5;  
hs 83 ˚C  
sinusoidal; a = 1.57;  
hs 90 ˚C  
-
-
A
A
T
7
T
IF(RMS)  
IFRM  
RMS forward current  
Peak repetitive forward current t = 25 µs; δ = 0.5;  
-
-
11  
16  
A
A
T
hs 83 ˚C  
IFSM  
Peak non-repetitive forward  
current.  
t = 10 ms  
-
-
65  
71  
A
A
t = 8.3 ms  
sinusoidal; Tj = 150 ˚C prior  
to surge; with reapplied  
VRWM(max)  
I2t  
Tstg  
Tj  
I2t for fusing  
Storage temperature  
Operating junction temperature  
t = 10 ms  
-
-40  
-
28  
150  
150  
A2s  
˚C  
˚C  
1. Neglecting switching and reverse current losses.  
September 1998  
1
Rev 1.100  
Philips Semiconductors  
Product specification  
Rectifier diodes  
fast, soft-recovery  
BY329F, BY329X series  
ISOLATION LIMITING VALUE & CHARACTERISTIC  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Visol  
Visol  
Cisol  
Peak isolation voltage from  
SOD100 package; R.H. 65%; clean and  
-
-
-
-
1500  
2500  
-
V
both terminals to external  
heatsink  
dustfree  
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;  
both terminals to external  
heatsink  
-
V
sinusoidal waveform; R.H. 65%; clean  
and dustfree  
Capacitance from pin 1 to  
external heatsink  
f = 1 MHz  
10  
pF  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Thermal resistance junction to with heatsink compound  
-
-
-
-
-
55  
4.8  
5.9  
-
K/W  
K/W  
K/W  
heatsink  
without heatsink compound  
Thermal resistance junction to in free air.  
ambient  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VF  
IR  
Forward voltage  
Reverse current  
IF = 20 A  
VR = VRWM; Tj = 125 ˚C  
-
-
1.5  
0.1  
1.85  
1.0  
V
mA  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
trr  
Reverse recovery time  
IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs  
IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs  
-
-
-
125  
0.5  
50  
145  
0.7  
60  
ns  
µC  
A/µs  
Qs  
Reverse recovery charge  
dIR/dt  
Maximum slope of the reverse IF = 2 A; -dIF/dt = 20 A/µs  
recovery current  
September 1998  
2
Rev 1.100  
Philips Semiconductors  
Product specification  
Rectifier diodes  
fast, soft-recovery  
BY329F, BY329X series  
IFS (RMS) / A  
dI  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
I
F
F
dt  
IFSM  
trr  
time  
Qs  
100%  
25%  
I
I
R
rrm  
1ms  
10ms  
0.1s  
1s  
10s  
tp / s  
Fig.1. Definition of trr, Qs and Irrm  
Fig.4. Maximum non-repetitive rms forward current.  
IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior  
to surge with reapplied VRWM  
.
Ths(max) / C  
IF / A  
PF / W  
30  
20  
10  
0
20  
15  
10  
5
54  
78  
Vo = 1.25 V  
Rs = 0.03 Ohms  
D = 1.0  
Tj = 150 C  
Tj = 25 C  
0.5  
0.2  
102  
126  
150  
0.1  
t
T
p
t
p
I
D =  
typ  
max  
t
T
0
1.5  
0
0.5  
1
2
0
2
4
6
IF(AV) / A  
8
10  
12  
VF / V  
Fig.2. Maximum forward dissipation, PF = f(IF(AV));  
square wave current waveform; parameter D = duty  
cycle = tp/T.  
Fig.5. Typical and maximum forward characteristic;  
IF = f(VF); parameter Tj  
Ths(max) / C  
a = 1.57  
Qs / uC  
PF / W  
10  
15  
10  
5
78  
Tj = 150 C  
Tj = 25 C  
Vo = 1.25 V  
Rs = 0.03 Ohms  
IF = 10 A  
10 A  
1.9  
2.2  
102  
2 A  
2.8  
1 A  
2 A  
4
1
1 A  
126  
150  
0.1  
0
10  
-dIF/dt (A/us)  
1
100  
0
2
4
6
8
IF(AV) / A  
Fig.3. Maximum forward dissipation, PF = f(IF(AV));  
sinusoidal current waveform; parameter a = form  
Fig.6. Maximum Qs at Tj = 25˚C and 150˚C  
factor = IF(RMS)/IF(AV)  
.
September 1998  
3
Rev 1.100  
Philips Semiconductors  
Product specification  
Rectifier diodes  
fast, soft-recovery  
BY329F, BY329X series  
Transient thermal impedance, Zth j-hs (K/W)  
trr / ns  
1000  
10  
1
IF = 10 A  
10A  
1 A  
1A  
0.1  
100  
p
t
p
t
P
0.01  
D
D =  
T
Tj = 150 C  
Tj = 25 C  
t
T
0.001  
10  
1
1us  
10us 100us 1ms  
10ms 100ms  
1s  
10s  
10  
-dIF/dt (A/us)  
100  
pulse width, tp (s)  
Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C  
and 150˚C  
Fig.9. Transient thermal impedance Zth = f(tp)  
B
Cd / pF  
100  
10  
1
10  
1000  
1
100  
VR / V  
Fig.8. Typical junction capacitance Cd at f = 1 MHz;  
Tj = 25˚C  
September 1998  
4
Rev 1.100  
Philips Semiconductors  
Product specification  
Rectifier diodes  
fast, soft-recovery  
BY329F, BY329X series  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
10.2  
max  
5.7  
max  
3.2  
3.0  
4.4  
max  
0.9  
0.5  
2.9 max  
4.4  
4.0  
7.9  
7.5  
17  
max  
seating  
plane  
3.5 max  
4.4  
not tinned  
13.5  
min  
k
a
0.9  
0.7  
0.4  
M
0.55 max  
1.3  
5.08  
top view  
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.  
Notes  
1. Refer to mounting instructions for F-pack envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
September 1998  
5
Rev 1.100  
Philips Semiconductors  
Product specification  
Rectifier diodes  
fast, soft-recovery  
BY329F, BY329X series  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
10.3  
max  
4.6  
max  
3.2  
3.0  
2.9 max  
2.8  
Recesses (2x)  
6.4  
2.5  
0.8 max. depth  
15.8  
max  
seating  
plane  
15.8  
max.  
19  
max.  
3 max.  
not tinned  
3
2.5  
13.5  
min.  
1
2
M
0.4  
1.0 (2x)  
0.6  
2.5  
0.9  
0.7  
2.54  
0.5  
5.08  
Fig.11. SOD113; The seating plane is electrically isolated from all terminals.  
Notes  
1. Refer to mounting instructions for F-pack envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
September 1998  
6
Rev 1.100  
Philips Semiconductors  
Product specification  
Rectifier diodes  
fast, soft-recovery  
BY329F, BY329X series  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1998  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
September 1998  
7
Rev 1.100  

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