BYD63 [NXP]
Ripple blocking diode; 纹波阻塞二极管
| 型号： | BYD63 |
| 厂家： | 
NXP |
| 描述： | Ripple blocking diode |
| 文件： | 总7页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BYD63
Ripple blocking diode
1996 Jun 10
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC01
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
FEATURES
DESCRIPTION
and fatigue free as coefficients of
expansion of all used parts are
matched.
• Glass passivated
Cavity free cylindrical glass package
through Implotec (1) technology.
This package is hermetically sealed
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
k
a
handbook, 4 columns
MAM123
• Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
Fig.1 Simplified outline (SOD81) and symbol.
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
CONDITIONS
MIN.
MAX.
300
UNIT
−
−
−
V
V
A
300
IF(AV)
averaged over any 20 ms period;
Ttp = 55 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
0.85
averaged over any 20 ms period;
−
0.45
A
T
amb = 65 °C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
IFRM
repetitive peak forward current
Ttp = 55 °C
−
−
−
8.25
4.45
5
A
A
A
Tamb = 65 °C
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
1996 Jun 10
2
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
IF = 1 A; Tj = Tj max; see Fig.5
IF = 1 A; see Fig.5
−
−
−
−
−
−
1.7
2.3
1
V
V
IR
reverse current
VR = VRRMmax
;
µA
µA
ns
ns
see Fig.6
VR = VRRMmax; Tj = 165 °C;
see Fig.6
−
−
−
−
−
100
350
−
tfr
forward recovery time
turn-on time
when switched to IF = 1 A
in 50 ns; see Fig.9
ton
when switched from VF = 0 V to
VF = 3 V; measured between
500
10% and 90% of IF max
;
see Fig.11
trr
reverse recovery time
diode capacitance
when switched from IF = 0.5 A to
IR = 1 A; measured at
IR = 0.25 A; see Fig.11
−
−
−
150
ns
Cd
f = 1 MHz; VR = 0 V; see Fig.7
17
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
K/W
120
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the ‘General Part of Handbook SC01.’
1996 Jun 10
3
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
GRAPHICAL DATA
MLC303
MLC304
0.8
1.6
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
0.6
1.2
lead length 10 mm
0.8
0.4
0.2
0.4
0
0
0
o
100
200
o
0
100
200
T
( C)
T
( C)
amb
tp
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.8.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MLC301
MLC302
6
3
handbook, halfpage
handbook, halfpage
I
F
P
(W)
(A)
a = 3 2.5
2
1.57
4
2
1
0
1.42
2
0
0
1
2
3
4
5
0
0.5
1.0
V
(V)
I
(A)
F(AV)
F
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.5 Forward current as a function of forward
voltage; maximum values.
1996 Jun 10
4
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
MLC305
MGA853
2
3
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
C
d
(pF)
2
10
10
10
1
1
2
3
1
10
0
100
200
10
10
o
( C)
V
(V)
T
R
j
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax
.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
MGC500
50
handbook, halfpage
V
handbook, halfpage
F
25
110%
7
100%
50
t
t
fr
I
F
2
3
10%
t
MGA200
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
Fig.9 Forward recovery time definition.
1996 Jun 10
5
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
3V
F
V
DUT
(V)
0
50 Ω
10 Ω
100%
90%
I
F
(A)
10%
0
t
on
MBH530
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 10 ns.
Fig.10 Test circuit and turn-on time waveform and definition.
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.11 Test circuit and reverse recovery time waveform and definition.
6
1996 Jun 10
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
PACKAGE OUTLINE
5 max
0.81
max
2.15
max
MBC051
28 min
3.8 max
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.12 SOD81.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 10
7
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