BYG60M [NXP]
Fast soft-recovery controlled avalanche rectifiers; 快速软恢复控制雪崩整流器型号: | BYG60M |
厂家: | NXP |
描述: | Fast soft-recovery controlled avalanche rectifiers |
文件: | 总6页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
BYG60 series
Fast soft-recovery
controlled avalanche rectifiers
1996 Jun 05
Preliminary specification
File under Discrete Semiconductors, SC01
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
FEATURES
DESCRIPTION
• Glass passivated
DO-214AC surface mountable
package with glass passivated chip.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
cathode
band
handbook, 4 columns
• Guaranteed avalanche energy
k
a
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
Top view
Side view
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG60D
−
−
−
−
−
200
400
V
V
V
V
V
BYG60G
BYG60J
600
BYG60K
800
BYG60M
1000
VR
continuous reverse voltage
BYG60D
−
−
−
−
−
−
200
400
V
V
V
V
V
A
BYG60G
BYG60J
600
BYG60K
800
BYG60M
1000
1.90
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 100 °C; see Fig.2
−
−
−
0.90
0.65
25
A
A
A
averaged over any 20 ms period;
Al2O3 PCB mounting (see Fig.7);
Tamb = 60 °C; see Fig.3
averaged over any 20 ms period;
epoxy PCB mounting (see Fig.7);
Tamb = 60 °C; see Fig.3
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
1996 Jun 05
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
BYG60D to J
−
10
7
mJ
mJ
BYG60K and M
−
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
see Fig.4
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
0.98
1.20
UNIT
VF
IF = 1 A; Tj = Tj max; see Fig.5
IF = 1 A; see Fig.5
IR = 0.1 mA
−
−
−
−
V
V
V(BR)R
reverse avalanche
breakdown voltage
BYG60D
BYG60G
300
500
700
900
1100
−
−
−
−
−
−
−
−
−
−
−
−
5
V
V
BYG60J
V
BYG60K
V
BYG60M
V
IR
reverse current
VR = VRRMmax
see Fig.6
;
µA
VR = VRRMmax; Tj = 165 °C;
−
−
100
µA
see Fig.6
trr
reverse recovery time
BYG60D to J
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
−
−
−
−
250
300
ns
ns
BYG60K and M
diode capacitance
BYG60D to J
Cd
VR = 0 V; f = 1 MHz
−
−
30
25
−
−
pF
pF
BYG60K and M
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
25
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
K/W
K/W
K/W
note 1
note 2
100
150
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the ‘General Part of Handbook SC01’.
1996 Jun 05
3
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
GRAPHICAL DATA
MGD481
MGD482
4
1.6
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
3
1.2
2
1
0.8
0.4
0
0
0
0
100
200
100
200
T
(°C)
T
(°C)
amb
tp
VR = VRRMmax; δ = 0.5; a = 1.57
Device mounted as shown in Fig.7;
solid line: Al2O3 PCB; dotted line: epoxy PCB.
VR = VRRMmax; δ = 0.5; a = 1.57.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGD483
MGD484
200
10
handbook, halfpage
handbook, halfpage
T
I
j
F
(°C)
(A)
8
160
6
4
2
0
120
80
D
G
J
K
M
40
0
0
400
800
1200
0
1
2
3
V
(V)
V (V)
F
R
Device mounted as shown in Fig.7
Solid line: Al2O3 PCB
Solid line: Tj = 25 °C.
Dotted line: epoxy PCB.
Dotted line: Tj = 175 °C.
Fig.4 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.5 Forward current as a function of forward
voltage; maximum values.
1996 Jun 05
4
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
MGC532
3
10
handbook, halfpage
50
I
R
(µA)
2
10
4.5
50
2.5
10
1
0
1.25
MSB213
100
200
o
T ( C)
j
VR = VRMMmax
.
Dimensions in mm.
Material: AL2O3 or epoxy-glass.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
Fig.7 Printed-circuit board for surface mounting.
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.8 Test circuit and reverse recovery time waveform and definition.
5
1996 Jun 05
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
PACKAGE OUTLINE
5.5
5.1
4.5
4.3
2.3
2.0
0.05
0.2
3.3
2.7
MSA414
2.8 1.6
2.4 1.4
Marking band indicates the cathode.
Dimensions in mm.
Fig.9 SOD106.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 05
6
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NXP
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