BYT79-500,127 [NXP]

BYT79-500;


型号：	BYT79-500,127
厂家：	NXP
描述：	BYT79-500 超快软恢复二极管快速软恢复二极管局域网
文件：	总7页 (文件大小：129K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

BYT79 series

Rectifier diodes

ultrafast

Product specification

September 1998

NXP Semiconductors

Product specification

Rectifier diodes

ultrafast

BYT79 series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

V_R= 300 V/ 400 V/ 500 V

• Soft recovery characteristic

• High thermal cycling performance

• Low thermal resistance

V_F≤ 1.05 V

I_F(AV)= 14 A

t_rr≤ 60 ns

GENERAL DESCRIPTION

PINNING

SOD59 (TO220AC)

Ultra-fast, epitaxial rectifier diodes

intended for use as output rectifiers

in high frequency switched mode

power supplies.

DESCRIPTION

cathode

anode

cathode

tab

The BYT79 series is supplied in the

SOD59

conventional

(TO220AC) package.

leaded

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BYT79

-300

300

-400

400

-500

500

V_RRM

V_R

Peak repetitive reverse voltage

Continuous reverse voltage

T_mb≤ 147˚C

I_F(AV)

I_FSM

Average forward current¹

square wave; δ = 0.5;

T_mb≤ 117 ˚C

t = 10 ms

t = 8.3 ms

sinusoidal; with reapplied

V_RRM(max)

Non-repetitive peak forward

current.

130

143

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

mounting base

Thermal resistance junction to in free air.

ambient

2.0

K/W

1 Neglecting switching and reverse current losses

September 1998

Rev 1.300

NXP Semiconductors

Product specification

Rectifier diodes

ultrafast

BYT79 series

ELECTRICAL CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

I_R

Forward voltage

I_F= 15 A; T_j= 150˚C

I_F= 30 A

V_R= V_RRM

V_R= V_RRM; T_j= 100 ˚C

I_F= 2 A to V_R≥ 30 V;

dI_F/dt = 20 A/µs

I_F= 1 A to V_R≥ 30 V;

dI_F/dt = 100 A/µs

0.90

1.17

5.0

0.2

1.05

1.38

0.8

µA

Reverse current

Q_s

t_rr

Reverse recovery charge

Reverse recovery time

4.0

2.5

5.2

I_rrm

V_fr

Peak reverse recovery current I_F= 10 A to V_R≥ 30 V;

dI_F/dt = 50 A/µs; T_j= 100˚C

Forward recovery voltage

I_F= 10 A; dI_F/dt = 10 A/µs

PF / W

BYT79

Tmb(max) / C

100

Vo = 0.9075 V

Rs = 0.0095 Ohms

D = 1.0

110

0.5

120

130

140

150

time

0.2

0.1

D =

100%

10%

rrm

IF(AV) / A

Fig.1. Definition of t_rr, Q_sand I_rrm

Fig.3. Maximum forward dissipation P_F= f(I_F(AV));

square wave where I_F(AV)=I_F(RMS)x √D.

PF / W

BYT79

Tmb(max) / C

110

120

Vo = 0.9075 V

Rs = 0.0095 Ohms

a = 1.57

1.9

2.2

2.8

time

130

140

150

time

IF(AV) / A

Fig.2. Definition of V_fr

Fig.4. Maximum forward dissipation P_F= f(I_F(AV));

sinusoidal current waveform where a = form

factor = I_F(RMS)/ I_F(AV)

September 1998

Rev 1.300

NXP Semiconductors

Product specification

Rectifier diodes

ultrafast

BYT79 series

Qs / nC

trr / ns

1000

100

IF=20 A

IF = 20 A

100

2 A

Tj = 25 C

Tj = 100 C

100

dIF/dt (A/us)

1.0

-dIF/dt (A/us)

100

Fig.5. Maximum t_rrat T_j= 25˚C and 100˚C

Fig.8. Maximum Q_sat T_j= 25˚C

Irrm / A

Transient thermal impedance, Zth j-mb (K/W)

IF= 20 A

IF=1A

0.1

0.01

D =

Tj = 25 C

Tj = 100 C

0.01

0.001

1us

10us 100us 1ms

10ms 100ms

BYV79E

10s

-dIF/dt (A/us)

100

pulse width, tp (s)

Fig.6. Maximum I_rrmat T_j= 25˚C and 100˚C.

Fig.9. Transient thermal impedance Z_th= f(t_p)

BYT79

IF / A

Tj = 25 C

Tj = 150 C

typ

max

0.5

VF / V

1.5

Fig.7. Typical and maximum forward characteristic

I_F= f(V_F); parameter T_j

September 1998

Rev 1.300

NXP Semiconductors

Product specification

Rectifier diodes

ultrafast

BYT79 series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

max

(2x)

0,9 max (2x)

0,6

2,4

5,08

Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

September 1998

Rev 1.300

NXP Semiconductors

Legal information

DATA SHEET STATUS

DOCUMENT

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product

development.

Preliminary data sheet

Product data sheet

Qualification

Production

This document contains data from the preliminary specification.

This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DEFINITIONS

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Product specification ⎯ The information and data

provided in a Product data sheet shall define the

specification of the product as agreed between NXP

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Semiconductors and customer have explicitly agreed

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agreement be valid in which the NXP Semiconductors

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Legal information

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Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) will cause permanent damage to

the device. Limiting values are stress ratings only and

(proper) operation of the device at these or any other

conditions above those given in the Recommended

operating conditions section (if present) or the

Characteristics sections of this document is not warranted.

Constant or repeated exposure to limiting values will

permanently and irreversibly affect the quality and

reliability of the device.

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sheet expressly states that this specific NXP

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or application requirements. NXP Semiconductors accepts

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applications.

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Printed in The Netherlands

BYT79-500,127 [NXP]

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