BYV29F [NXP]
Rectifier diodes ultrafast; 整流二极管超快
| 型号： | BYV29F |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes ultrafast |
| 文件： | 总7页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
VR = 300 V/ 400 V/ 500 V
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
k
1
a
2
VF ≤ 1.03 V
IF(AV) = 9 A
trr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
cathode (k)
anode (a)
isolated
case
case
1
2
tab
1
2
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN.
BYV29F/BYV29X
hs ≤ 138˚C1
square wave; δ = 0.5;
MAX.
UNIT
-300
300
300
-400
400
400
-500
500
500
VRRM
VR
Peak repetitive reverse voltage
Continuous reverse voltage
Average forward current2
-
-
V
V
T
IF(AV)
IFSM
-
9
A
Ths ≤ 90 ˚C
Non-repetitive peak forward
current
t = 10 ms
-
-
100
110
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
1 Ths de-rating for thermal stability.
2 Neglecting switching and reverse current losses
February 1999
1
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Visol
Cisol
Peak isolation voltage from
SOD100 package; R.H. ≤ 65%; clean and
-
-
-
-
1500
2500
-
V
all terminals to external
heatsink
dustfree
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
all terminals to external
heatsink
-
V
sinusoidal waveform; R.H. ≤ 65%; clean
and dustfree
Capacitance from pin 2 to
external heatsink
f = 1 MHz
10
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Rth j-a
Thermal resistance junction to with heatsink compound
-
-
-
-
-
55
5.5
7.2
-
K/W
K/W
K/W
heatsink
without heatsink compound
Thermal resistance junction to in free air.
ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 8 A; Tj = 150˚C
IF = 8 A
-
-
-
-
-
-
0.90
1.05
1.20
2.0
1.03
1.25
1.40
50
V
V
IF = 20 A
V
IR
Reverse current
VR = VRRM
µA
mA
nC
VR = VRRM; Tj = 100 ˚C
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
0.1
0.35
60
Qs
trr
Reverse recovery charge
Reverse recovery time
40
-
-
-
50
4.0
2.5
60
5.5
-
ns
A
Irrm
Vfr
Peak reverse recovery current IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage
IF = 10 A; dIF/dt = 10 A/µs
V
February 1999
2
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
Ths(max) / C
a = 1.57
PF / W
dI
12
10
8
84
I
F
Vo = 0.89V
Rs = 0.019 Ohms
F
dt
95
1.9
2.2
t
106
117
128
rr
2.8
4
time
6
4
Q
100%
10%
s
2
139
150
I
I
R
rrm
0
0
2
4
6
8
10
IF(AV) / A
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
trr / ns
I
1000
100
10
F
F
IF=10 A
1A
time
V
V
Tj = 25 C
Tj = 100C
fr
V
F
1
100
1
10
time
dIF/dt (A/us)
Fig.2. Definition of Vfr
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
Irrm / A
10
Ths(max) / C
D = 1.0
PF / W
15
10
5
67.5
95
Vo = 0.8900 V
Rs = 0.0190 Ohms
IF=10A
0.5
1
0.2
IF=1A
0.1
0.1
122.5
150
t
T
p
tp
I
D =
Tj = 25 C
Tj = 100C
t
T
0.01
0
10
100
1
0
5
10
15
IF(AV) / A
-dIF/dt (A/us)
Fig.3. Maximum forward dissipation PF = f(IF(AV));
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.
square wave where IF(AV) =IF(RMS) x √D.
February 1999
3
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
Transient thermal impedance, Zth j-hs (K/W)
IF / A
30
10
1
Tj=150 C
Tj=25 C
20
10
0
0.1
typ
max
p
t
p
t
P
0.01
D
D =
T
t
T
0.001
1us
10us 100us 1ms
10ms 100ms
pulse width, tp (s)
1s
10s
0.5
1.5
0
1
2
VF / V
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.9. Transient thermal impedance Zth j-hs= f(tp)
Qs / nC
1000
IF = 10 A
100
2 A
10
1
1.0
10
100
-dIF/dt (A/us)
Fig.8. Maximum Qs at Tj = 25˚C
February 1999
4
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.2
max
5.7
max
3.2
3.0
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
4.4
not tinned
13.5
min
k
a
0.9
0.7
0.4
M
0.55 max
1.3
5.08
top view
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1999
5
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
6.4
2.5
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
Fig.11. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1999
6
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
7
Rev 1.400
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