BYV42EB-200,118 [NXP]

BYV42EB-200;


型号：	BYV42EB-200,118
厂家：	NXP
描述：	BYV42EB-200 超快软恢复二极管快速软恢复二极管
文件：	总9页 (文件大小：130K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

BYV42E, BYV42EB series

Rectifier diodes

ultrafast, rugged

Product specification

July 1998

NXP Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

FEATURES

SYMBOL

QUICK REFERENCE DATA

V_R= 150 V/ 200 V

V_F≤ 0.85 V

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

I_O(AV)= 30 A

I_RRM= 0.2 A

t_rr≤ 28 ns

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power

supplies.

The BYV42E series is supplied in the SOT78 conventional leaded package.

The BYV42EB series is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

DESCRIPTION

tab

anode 1 (a)

cathode (k) ¹

anode 2 (a)

cathode (k)

1 2 3

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN.

BYV42E / BYV42EB

MAX.

UNIT

-150

150

-200

200

V_RRM

V_RWM

V_R

Peak repetitive reverse voltage

Crest working reverse voltage

Continuous reverse voltage

T_mb≤ 144˚C

Average rectified output current square wave

I_O(AV)

I_FRM

I_FSM

(both diodes conducting)

Repetitive peak forward current t = 25 µs; δ = 0.5;

δ = 0.5; T_mb≤ 108 ˚C

per diode

Non-repetitive peak forward

current per diode

T_mb≤ 108 ˚C

t = 10 ms

t = 8.3 ms

150

160

sinusoidal; with reapplied

V_RWM(max)

I_RRM

I_RSM

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

per diode

0.2

Non-repetitive peak reverse

current per diode

t_p= 100 µs

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

1. It is not possible to make connection to pin 2 of the SOT404 package

2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting

tab.

July 1998

Rev 1.200

NXP Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

ESD LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_C

Electrostatic discharge

capacitor voltage

Human body model;

C = 250 pF; R = 1.5 kΩ

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to per diode

mounting base both diodes

Thermal resistance junction to SOT78 package, in free air

2.4

1.4

K/W

ambient

SOT404 and SOT428 packages,

pcb mounted, minimum footprint,

FR4 board

ELECTRICAL CHARACTERISTICS

characteristics are per diode at T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

Forward voltage

I_F= 15 A; T_j= 150˚C

I_F= 15 A

I_F= 30 A

V_R= V_RWM; T_j= 100 ˚C

V_R= V_RWM

I_F= 2 A; V_R≥ 30 V; -dI_F/dt = 20 A/µs

I_F= 1 A; V_R≥ 30 V;

-dI_F/dt = 100 A/µs

I_F= 0.5 A to I_R= 1 A; I_rec= 0.25 A

I_F= 1 A; dI_F/dt = 10 A/µs

0.78

0.95

1.00

0.5

0.85

1.05

1.20

100

µA

I_R

Reverse current

Q_s

t_rr1

Reverse recovery charge

Reverse recovery time

t_rr2

V_fr

Reverse recovery time

Forward recovery voltage

July 1998

Rev 1.200

NXP Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

0.5A

time

= 0.25A

rec

100%

10%

trr2

rrm

I = 1A

Fig.1. Definition of t_rr1, Q_sand I_rrm

Fig.4. Definition of t_rr2

PF / W

Tmb(max) / C

D = 1.0

BYV42

102

114

126

138

150

Vo = 0.705 V

Rs = 0.0097 Ohms

0.5

0.2

time

0.1

D =

IF(AV) / A

time

Fig.2. Definition of V_fr

Fig.5. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; square current waveform where

_F(AV)=I_F(RMS)x √D.

Tmb(max) / C

a = 1.57

PF / W

BYV42

114

Vo = 0.705 V

Rs = 0.0097 Ohms

1.9

2.2

2.8

126

D.U.T.

Voltage Pulse Source

138

150

Current

shunt

to ’scope

IF(AV) / A

Fig.3. Circuit schematic for t_rr2

Fig.6. Maximum forward dissipation P_F= f(I_F(AV)) per

diode; sinusoidal current waveform where a = form

factor = I_F(RMS)/ I_F(AV)

July 1998

Rev 1.200

NXP Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

trr / ns

1000

Qs / nC

100

IF=20A

10A

IF=20A

100

IF=1A

1.0

dIF/dt (A/us)

100

1.0

100

-dIF/dt (A/us)

Fig.7. Maximum t_rrat T_j= 25 ˚C; per diode

Fig.10. Maximum Q_sat T_j= 25 ˚C; per diode

Transient thermal impedance, Zth j-mb (K/W)

Irrm / A

IF=20A

IF=1A

0.1

0.01

D =

0.001

0.01

1us

10us 100us 1ms

10ms 100ms

BYV42E

10s

-dIF/dt (A/us)

100

pulse width, tp (s)

Fig.8. Maximum I_rrmat T_j= 25 ˚C; per diode

Fig.11. Transient thermal impedance; per diode;

_{th j-mb}= f(t_p).

IF / A

Tj = 150 C

Tj = 25 C

typ

max

1.0

0.5

1.5

VF / V

Fig.9. Typical and maximum forward characteristic

I_F= f(V_F); parameter T_j

July 1998

Rev 1.200

NXP Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

1 2 3

max

(2x)

0,9 max (3x)

0,6

2,4

2,54 2,54

Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.

2. Epoxy meets UL94 V0 at 1/8".

July 1998

Rev 1.200

NXP Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E, BYV42EB series

MECHANICAL DATA

Dimensions in mm

Net Mass: 1.4 g

4.5 max

1.4 max

10.3 max

11 max

15.4

2.5

0.85 max

(x2)

0.5

2.54 (x2)

Fig.13. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

11.5

9.0

17.5

2.0

3.8

5.08

Fig.14. SOT404 : soldering pattern for surface mounting.

Notes

1. Epoxy meets UL94 V0 at 1/8".

July 1998

Rev 1.200

NXP Semiconductors

Legal information

DATA SHEET STATUS

DOCUMENT

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product

development.

Preliminary data sheet

Product data sheet

Qualification

Production

This document contains data from the preliminary specification.

This document contains the product specification.

Notes

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and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

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Printed in The Netherlands

BYV42EB-200,118 [NXP]

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