KMZ50 [NXP]
Magnetic field sensor; 磁科幻场传感器
NXP 
DISCRETE SEMICONDUCTORS
DATA SHEET
KMZ50
Magnetic field sensor
1998 Mar 24
Preliminary specification
Supersedes data of 1996 Nov 15
File under Discrete Semiconductors, SC17
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ50
FEATURES
PINNING
PIN
• High sensitivity
SYMBOL
DESCRIPTION
• Integrated set/reset coil.
1
2
3
4
5
6
7
8
+Iflip
VCC
GND
n.c.
flip coil
bridge supply voltage
ground
APPLICATIONS
not connected
not connected
bridge output voltage
bridge output voltage
flip coil
• Navigation
n.c.
• Current and earth magnetic field measurement
• Traffic detection.
−VO
+VO
−Iflip
DESCRIPTION
The KMZ50 is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. The sensor contains one magnetoresistive
Wheatstone bridge and integrated set/reset conductors.
With the integrated set/reset conductor the orientation of
sensitivity may be set or changed (flipped). A short current
pulse on this conductor is needed to recover (set) the
sensor after exposure to strong disturbing magnetic fields.
A negative current pulse will reset the sensor to reversed
sensitivity. By use of periodically alternated flipping pulses
and a lock-in amplifier, output will become independent of
sensor and amplifier offset.
8
5
handbook, halfpage
H
pin 1
index
1
4
MGD791
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
bridge supply voltage
MIN.
TYP.
MAX.
UNIT
−
5
8
V
S
sensitivity (uncompensated)
12
16
−
mV ⁄ V
----------------
kA ⁄ m
Voffset
Rbridge
Rflip
offset voltage
−1.5
1
−
−
3
+1.5
3
mV/V
kΩ
bridge resistance
flip coil resistance
1
5
Ω
Iflip (min)
tflip (min)
minimum recommended flipping current; note 1
minimum flip pulse duration; note 1
800
1
1000
3
1200
100
mA
µs
Note
1. Average power consumption in flip conductor, defined by current, pulse duration and pulse repetition rate may not
exceed the specified limit, see “Limiting values”.
1998 Mar 24
2
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ50
CIRCUIT DIAGRAM
handbook, halfpage
+V
−I
−V
n.c.
5
O
F
O
6
8
7
Z
1
1
2
3
4
MGD792
n.c.
V
+I
GND
CC
F
Fig.2 Simplified circuit diagram.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER
VCC
MIN.
MAX.
UNIT
bridge supply voltage
total power dissipation
storage temperature
−
−
9
V
Ptot
130
+150
+125
1500
50
mW
°C
Tstg
−65
Tbridge
Iflip (max)
Pflip (max)
Visol
bridge operating temperature
maximum flipping current
−40
−
°C
mA
mW
V
maximum flipping power dissipation
−
voltage between isolated systems:
flip conductor - Wheatstone bridge
−
60
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
155
K/W
1998 Mar 24
3
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ50
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
Hy
bridge supply voltage
−
5
8
V
operating range in sensitive
direction
−0.2
−0.2
12
−
+0.2
+0.2
−
kA/m
Hx
S
operating range perpendicular to
sensitive direction
−
kA/m
sensitivity
open circuit
16
mV ⁄ V
----------------
kA ⁄ m
TCVO
temperature coefficient of
output voltage
VCC = 5 V;
Tamb = −25 to +125 °C
−
−
−0.4
−0.1
−
−
%/K
I
CC = 3 mA;
%/K
Tamb = −25 to +125 °C
resistance pins 2 to 3
Tbridge = −25 to +125 °C
Rbridge
bridge resistance
1
−
3
kΩ
TCRbridge temperature coefficient of
bridge resistance
−
0.3
−
%/K
Voffset
offset voltage
−1.5
−3
−
−
+1.5
mV/V
TCVoffset temperature coefficient of offset Tbridge = −25 to +125 °C
+3
µ V ⁄ V
---------------
K
voltage
FH
Rflip
Iflip
hysteresis of output voltage
−
−
2
%FS
Ω
resistance of set/reset conductor resistance pins 1 to 8
1
3
5
recommended flipping current
for stable operation
current pins 1 to 8
±800
±1000
±1200
mA
tflip
flip pulse duration
isolating resistance
1
1
3
100
µs
Risol
resistance pins 1 to 2,
1 to 4, 2 to 4
−
−
MΩ
Visol
f
voltage between isolated
systems
voltage pins 1 to 2, 1 to 4,
2 to 4
−
−
−
50
1
V
operating frequency
0
MHz
1998 Mar 24
4
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ50
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
1998 Mar 24
5
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ50
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 24
6
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ50
NOTES
1998 Mar 24
7
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© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
115106/00/02/pp8
Date of release: 1998 Mar 24
Document order number: 9397 750 03594
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