MC33909Q3AD [NXP]

POWER SUPPLY MANAGEMENT CKT;
MC33909Q3AD
型号: MC33909Q3AD
厂家: NXP    NXP
描述:

POWER SUPPLY MANAGEMENT CKT

文件: 总94页 (文件大小:2482K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Document Number: MC33909  
Rev. 4.0, 8/2016  
NXP Semiconductors  
Advance Information  
System basis chip with DC/DC and  
multiple switch-to-ground interface  
33909  
This SMARTMOS IC integrates the common functionality of system basis chips  
with switch detection inputs. The device works as an advanced power  
management unit for the MCU and additional integrated circuits such as  
sensors, CAN transceivers, and eXtreme switches. It has one built-in enhanced  
high-speed CAN interface (ISO 11898-2 and -5), with local and bus failure  
diagnostics, protection and fail-safe operation mode, and includes four LINs,  
compatible with specification 2.1 and SAEJ2602-2.  
SYSTEM BASIS CHIP  
The IC starts operating when the VBATP (reverse battery protected) pin  
reaches 5.3 V maximum. The device requires a reverse blocking ultrafast or  
Schottky diode for operation. The VPRE supply operating in Buck/Boost mode  
allows functional operation of the IC from 2.5 V to 35 V on VBATP. The VPRE  
pin supplies the source voltage for the VDD, VAUX, CAN5V, and SG power  
rails.  
AD SUFFIX (PB-FREE)  
48 PIN LQFP-EP  
98ASA00737D  
Switch-to-ground inputs are available for switch detection and supply  
configurable pulsed wetting current, with low sustain current levels for  
improved thermal and power management. The IC can be programmed to  
wake-up when a change of state is detected on any input. The device also  
implements an innovative and advanced fail-safe state machine and concept  
solution.  
Applications  
• Front/rear body controllers  
• Gateway modules  
• Electric power steering  
• Power train  
Features  
• VDD rail (3.3 V or 5.0 V) operates down to 2.5 V on VBATP (provided by  
VPRE Buck/Boost)  
• VAUX rail (3.3 V or 5.0 V) capable of surviving short-to-battery (40 V)  
conditions  
• Low Q current operation for low-power sleep mode, typ. 125 μA  
• Secured SPI and advanced watchdog  
• SAFE_B pin for limp home mode  
• Six switch to GND inputs with selectable wake-up in change of state  
• Analog multiplexer  
VPRE VAUXE VAUXB  
VSW VPREGATE  
VAUX  
VDDE  
VBAT  
BOOT  
PI Filter  
VBAT_SMPS  
VDDB  
VDD  
VDD  
VBATP  
VBAT  
VBATSNS  
WDI  
SAFE_B  
AMUX  
SG0  
SG1  
SG2  
SG3  
SG4  
SG5  
RST_B  
INT_B  
MCU  
MOSI  
MISO  
SCLK  
CS_B  
SPI  
CANH  
CANL  
CAN Bus  
RXD_L0:RXD_L3  
TXD_L0:TXD_L3  
VBATP  
RXD_C  
TXD_C  
LIN_0  
LIN_1  
LIN_2  
LIN_3  
LIN Bus  
LIN Bus  
LIN Bus  
LIN Bus  
CAN5V  
GND LIN  
GND  
CANGND  
Figure 1. 33909AD simplified application diagram  
* This document contains certain information on a new product.  
Specifications and information herein are subject to change without notice.  
© 2016 NXP B.V.  
ORDERABLE PARTS  
1
Orderable parts  
This section describes the part numbers available to be purchased along with their differences. Valid orderable part numbers are provided  
on the web. To determine the orderable part numbers for this device, go to http://www.freescale.com and perform a part number search  
for the following device numbers.  
Table 1. Orderable part variations  
Temperature  
VDD output  
voltage  
CAN  
interface(s)  
Switch to GND  
inputs  
LIN interface(s)  
Part number  
MC33909N5AD  
Package  
Notes  
(T )  
A
0
1
2
4
0
1
2
4
MC33909L5AD  
MC33909D5AD  
MC33909Q5AD  
MC33909N3AD  
MC33909L3AD  
MC33909D3AD  
MC33909Q3AD  
Notes  
5.0 V  
3.3 V  
7.0 x 7.0,  
48 LQFP  
exposed pad  
(1)  
-40 °C to 125 °C  
1
6
1. To order parts in Tape & Reel, add the R2 suffix to the part number.  
33909  
NXP Semiconductors  
2
INTERNAL BLOCK DIAGRAM  
2
Internal block diagram  
BOOT VSW VPRE VPREGATE  
VDDE  
VDDB  
VDD  
Power Supply  
VBATP_SMPS  
VPRE Regulator  
VDD Regulator  
POR  
Sleep State  
Internal rails  
Bandgap  
VBATP  
VAUXE  
VAUXB  
VAUX  
VBATSNS  
VAUX  
Regulator  
250 mV accuracy  
Digital Control  
Logic  
SAFE_B  
RESET_B  
WDI  
Fail-safe  
Power Management  
State Machine  
Inputs  
SG0  
VPRE  
VPRE  
VPRE  
CANH  
CANL  
6-20  
mA  
2.0  
mA  
1.0  
mA  
(Low-power  
mode)  
Enhanced High  
Speed CAN  
Physical  
TXD_C  
RXD_C  
SG0  
Interface  
3.5 V REF  
comparator  
To SPI  
SG1  
SG2  
CANGND  
CAN5V  
VPRE  
5V CAN  
Regulator  
VPRE  
VPRE  
SG5  
SG3  
SG4  
6-20  
mA  
2.0  
mA  
1.0  
mA  
(Low-power  
mode)  
TXD_Lx  
RXD_Lx  
SG5  
Internal  
2.5 V  
3.5 V REF  
comparator  
LIN  
Interface  
To SPI  
Temperature  
Monitor and  
Control  
LINx  
Internal  
2.5 V  
Internal  
2.5 V  
VPRE  
VBATP  
Oscillator and  
Clock Control  
VDD  
40 µA  
CS_B  
SCLK  
MOSI  
MISO  
SPI Interface  
and Control  
25  
VDD  
MUX  
control  
VDD  
Internal  
2.5 V  
VDD  
+
-
AMUX  
INT_B  
GND LIN  
GND1/2  
125 kΩ  
Interrupt  
Control  
Figure 2. 33909AD simplified internal block diagram  
33909  
3
NXP Semiconductors  
INTERNAL BLOCK DIAGRAM  
2.1  
Pin connections  
Transparent Top View  
VAUXE  
VPRE  
SG2  
SG3  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
1
2
VAUXB  
VAUX  
SG4  
3
LIN0  
4
RXD_C  
TXD_C  
CANH  
LIN1  
5
GNDLIN  
LIN3  
6
EP  
7
LIN2  
CANL  
8
SG5  
GNDCAN  
CAN5V  
SAFE_B  
MISO  
9
AMUX  
10  
11  
12  
RST_B  
TXD_L0  
Figure 3. 33909AD pin connections  
A functional description of each pin can be found in the Functional device operation section.  
Table 2. 33909 pin definitions  
Pin number  
Pin name  
Pin function  
Definition  
Exposed pad – connect to the ground plane  
Switch to Ground inputs  
EP  
SG0 - SG5  
LIN0  
Ground  
Input  
1-3, 9, 47, 48  
LIN0 bus input/output connected to the LIN bus  
LIN1 bus input/output connected to the LIN bus  
Ground for LIN 0 - 3 bus  
4
5
6
7
8
Input/Output  
Input/Output  
Ground  
LIN1  
GND LIN  
LIN3  
LIN3 bus input/output connected to the LIN bus  
LIN2 bus input/output connected to the LIN bus  
Input/Output  
Input/Output  
LIN2  
This is the device reset output whose main function is to reset the MCU. This pin has an internal pull-up  
to VDD. RESET_B input voltage is also monitored in order to detect external reset and safe conditions.  
11  
RST_B  
Input/Output  
Analog multiplex output  
10  
12  
AMUX  
Output  
Input  
LIN0 bus transmit data input. Includes an internal pull-up resistor to VDD  
TXD_L0  
33909  
NXP Semiconductors  
4
INTERNAL BLOCK DIAGRAM  
Table 2. 33909 pin definitions (continued)  
Pin number  
Pin name  
Pin function  
Definition  
LIN0 bus receive data output  
Watchdog inhibit  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
RXD_L0  
WDI  
Output  
Input  
Open drain output to the MCU is used to indicate an input switch change of state.  
LIN1 bus transmit data input. Includes an internal pull-up resistor to VDD  
LIN1 bus receive data output  
INT_B  
Output  
TXD_L1  
RXD_L1  
RXD_L2  
TXD_L2  
TXD_L3  
RXD_L3  
MOSI  
Input  
Output  
LIN2 bus receive data output  
Output  
LIN2 bus transmit data input. Includes an internal pull-up resistor to VDD  
LIN3 bus transmit data input. Includes an internal pull-up resistor to VDD  
LIN3 bus receive data output  
Input  
Input  
Output  
SPI control data input pin from the MCU  
Input / SPI  
Input / SPI  
Input / SPI  
Output / SPI  
SPI control clock input pin  
SCLK  
SPI control chip select bar input pin. Logic [0] allows data to be transferred in.  
Provides digital data from 33909 to the MCU  
CS_B  
MISO  
Output of the safe circuitry. The pin is asserted LOW in case a safe condition is detected (e.g.: software  
watchdog is not triggered, VDD low, issue on reset pin, etc.). Open drain structure.  
26  
SAFE_B  
Output  
Output voltage for the embedded CAN interface. A capacitor must be connected to this pin.  
Power ground for the embedded CAN interface  
CAN low output  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
CAN5V  
GNDCAN  
CANL  
Output  
Ground  
Output  
Output  
Input  
CAN high output  
CANH  
CAN bus transmit data input. Internal pull-up to VDD  
CAN bus receive data output  
TXD_C  
RXD_C  
VAUX  
Output  
Input  
Output pin for the auxiliary voltage  
Base connection for the external PNP transistor  
Supply for VDD, VAUX, CAN5V, and SG Inputs  
Collector connection for the external PNP transistor  
Emitter connection for the external LDO  
Base connection for the external LDO  
VDD supply voltage  
VAUXB  
VPRE  
Output  
Input  
VAUXE  
VDDE  
Input  
Input  
VDDB  
Output  
Input  
VDD  
Gate control for low-side FET  
VPREGATE  
GND  
Output  
Ground  
Output  
Input  
Ground for logic and analog (GND1 and GND2)  
Switching output  
VSW  
Boot capacitor to VSW  
BOOT  
Supply for SMPS power rail. This pin requires external reverse battery protection.  
VBATP_SMPS  
Power  
Battery supply input pin. This pin requires external reverse battery protection. Supplies internal voltage  
except SMPS.  
45  
46  
VBATP  
Power  
Input  
Battery sense input. A 1.0 kΩ external resistor required to pass battery transients.  
VBATSNS  
33909  
5
NXP Semiconductors  
ELECTRICAL CHARACTERISTICS  
3
Electrical characteristics  
3.1  
Maximum ratings  
Table 3. Maximum ratings  
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage  
to the device.  
Symbol  
Electrical ratings  
VBATP/VBATP_SMPS  
VBATSNS  
Ratings  
Value  
Unit  
Notes  
DC Voltage at Power Supply Pins  
DC Voltage at Battery Sense Pin  
-0.3 to 40  
-14.0 to 41  
-0.3 to 7.0  
-0.3 to 40  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
mA  
DC Voltage at INT_B, RST_B, MISO, MOSI, CS_B, SCLK, AMUX  
DC Voltage at SAFE_B Pin  
VDIG  
VSAFE_B  
DC Voltage at WDI Pin  
VWDI  
-0.3 to 18  
DC Voltage at SG0, 1, 2, 3, 4, 5  
DC Voltage on CAN_5V pin  
VSG  
VCAN_5V  
VBUS_CAN  
VBUS_DIG  
VBUS_LIN  
VPRE  
-14 to 40  
-0.3 to 7.0  
-32 to 40  
DC Voltage on CANL, CANH  
DC Voltage on TXD_C, RXD_C, TXD_Lx, RXD_Lx  
DC Voltage on LINx  
-0.3 to VDD +0.3  
-27 to 40  
-0.3 to8.0  
-0.3 to 8.0  
-0.3 to 40  
-0.3 to 45  
-0.3 to 7.0  
-0.3 to 8.0  
-2.0 to 40  
-0.3 to 40  
200  
DC Voltage at VPRE Pin  
DC Voltage at VPRE_GATE Pin  
DC Voltage at VSW Pin  
VPRE_GATE  
VSW  
DC Voltage at BOOT Pin  
VBOOT  
DC Voltage at VDD Pin  
VDD  
DC Voltage at VDDE, VDDB Pin  
DC Voltage at VAUX Pin  
VDD_E,B  
VAUX  
VAUX_E,B  
IBUS_CAN  
DC Voltage at VAUXE, VAUXB Pin  
Continuous Current Capability of CANL, CANH  
33909  
NXP Semiconductors  
6
ELECTRICAL CHARACTERISTICS  
Table 3. Maximum ratings (continued)  
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage  
to the device.  
Symbol  
Ratings  
Value  
Unit  
Notes  
ESD ratings  
AEC Q100  
• LINx pins versus GND  
VESD1-1  
VESD1-2  
VESD1-3  
VESD1-4  
VESD2-1  
VESD2-2  
±8000  
±4000  
3000  
• VBAT_SMPS, VBATSNS pins versus GND  
• VBATP pin versus GND  
• all other pins  
(2)  
V
2000  
Charge Device Model  
• Corner pins (pins 1, 12, 24, 25, 36, 37, and 48)  
• All other pins (pins 2-11, 14-23, 26-35, 38-47)  
750  
500  
Contact Discharge, Unpowered  
VESD4-1  
VESD4-2  
VESD4-3  
VESD4-4  
VESD4-5  
• LIN0, LIN1, LIN2, and LIN3 pin with 220 pF  
• LIN0, LIN1, LIN2, and LIN3 pin without capacitor  
• CANH and CANL  
• SGx - pins with 47-100 nF capacitor  
• VBATP, VBAT_SMPS, VBATSNS  
6000  
6000  
6000  
6000  
6000  
(3)  
V
V
Unpowered  
VESD5-1  
VESD5-2  
VESD5-3  
VESD5-4  
• LIN0, LIN1, LIN2, and LIN3 pin with 220 pF and without capacitor  
• CANH, CANL pin without capacitor  
• VBATP (100 nF to GND)  
15000  
15000  
8000  
(3)  
• VBATSNS (1.0 kΩ series resistance)  
8000  
SGx pins with 47 nF to 100 nF capacitor  
• Air discharge - unpowered and powered  
• Contact discharge - unpowered and powered  
VESD6-1  
VESD6-2  
(3)  
(3)  
15000  
8000  
V
V
Contact Discharge, Unpowered, GND connected to ESD gun GND  
• CANH, CANL without capacitor  
VESD7-1  
Thermal ratings  
TA  
7000  
Ambient Temperature  
Junction Temperature  
Storage Temperature  
-40 to 125  
-40 to 150  
-55 to 150  
°C  
°C  
°C  
TJ  
TSTORE  
Notes  
2. ESD testing is performed in accordance with the Human Body Model (HBM) JESD22/A114 (CZAP = 100 pF, RZAP = 1500 Ω) and the Charge  
Device Model (CDM), Robotic (CZAP = 4.0 pF).  
3. According to Hardware requirements for LIN, CAN, and Flexray Interfaces in Automotive Applications, Revision 1.0, 2008-12-10 (IEC 61000-4-2:  
CZAP = 150 pF, RZAP = 330 Ω.  
33909  
7
NXP Semiconductors  
ELECTRICAL CHARACTERISTICS  
Table 4. Table of thermal resistance data  
Symbol  
Ratings  
Value  
72  
Unit  
°C/W  
°C/W  
°C/W  
°C/W  
Notes  
(4),(5)  
RΘJA  
Junction to Ambient, Natural Convection, Single Layer board (1s)  
Junction to Ambient, Natural Convection, Four layer board (2s2p)  
Junction to Case Top  
(4),(5)  
(6)  
RΘJA  
31  
RΘJCTOP  
RΘJCBOTTOM  
Notes  
23  
(7)  
Junction to Case Bottom  
1.2  
4. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient  
temperature, air flow, power dissipation of other components on the board, and board thermal resistance.  
5. Per JEDEC JESD51-2 with natural convection for horizontally oriented board. Board meets JESD51-9 specification for 1s or 2s2p board,  
respectively.  
6. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1).  
7. Thermal resistance between the die and the solder pad on the bottom of the package based on simulation without any interface resistance.  
33909  
NXP Semiconductors  
8
ELECTRICAL CHARACTERISTICS  
3.2  
Static electrical characteristics  
Table 5. Static electrical characteristics  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V DC to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
Power input  
Full DC voltage Range  
Typical DC Operating Range  
2.5  
7.0  
35  
27  
VBATP  
V
V
VBATP Undervoltage  
V
2.3  
35  
2.5  
40  
14  
BATUV  
• VBAT Power Down Range, POR occurs  
VBATP Overvoltage Detector Thresholds, at VBATP Pin  
• Not active in Low-power modes  
VS_HIGH  
V
Total Supply Current, in Normal Mode, CAN in Recessive Mode, SGx  
is open switch, 5.0 V CAN and VAUX ON, LINx in Recessive Mode  
IVBATP  
7.0  
mA  
Low-power Mode VDD Off. Wake-up from CAN, SGx inputs at  
T
= 64 ms, LIN  
• VBATP = 18 V and 8.0 V  
ILPM_OFF  
100  
190  
μA  
SCAN  
Low-power Mode VDDON (5.0 V) with VDD Undervoltage and VDD  
Overcurrent Monitoring, Wake-up from CAN, SGx Inputs at  
ILPM_ON  
125  
90  
200  
170  
μA  
μA  
T
= 64 m and LIN  
SCAN  
• VBATP = 18 V and 8.0 V  
Low-power Mode VDD OFF (no wake-up)  
• VBATP = 18 V and 8.0 V  
IOSC  
VPRE buck boost converter  
Minimum Start Up Voltage  
• VBAT Power Up Range, V is not Operating (VBATP <  
VBAT_MIN_SU  
4.5  
5.0  
5.3  
V
DD  
VBAT_MIN_SU  
)
Buck to Boost Mode Threshold Voltage  
Boost to Buck Mode Threshold Voltage  
Peak Input Current Limit  
VBATPTHD  
VBATPTHU  
IPRE_LIM  
ILOAD  
6.2  
6.8  
3.5  
6.6  
7.25  
4.0  
7.0  
7.8  
V
V
(8)  
(8)  
A
Transient Load Current Change  
VPRE Load regulation Variation  
Switching Frequency  
500  
25  
mA  
A/ms  
kHz  
(8)  
IPRE/DT  
fSW  
(8),(9)  
418  
440  
462  
Continuous Output Load Current  
• Buck mode  
(8)  
ILOAD_BUCK  
3.0  
0.5  
A
• Boost mode (VBATP = 2.5 V)  
ILOAD_BOOST  
Current Limit Blanking Time  
tILIM_BT  
200  
25  
600  
ns  
Continuous Output Load Current During Low-power Mode  
ILPM_LOAD  
40  
mA  
Notes  
8. Guaranteed by design.  
9. Fixed frequency.  
33909  
9
NXP Semiconductors  
ELECTRICAL CHARACTERISTICS  
Table 5. Static electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V DC to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
VPRE buck boost converter  
VPRE Overvoltage  
VPRE Overvoltage Hysteresis  
VPREOV  
VPREOVHYST  
VPREUV  
7.2  
0.05  
5.5  
0.05  
19  
8.0  
0.2  
6.0  
0.2  
24  
V
V
VPRE Undervoltage  
V
VPRE Undervoltage Hysteresis  
IPFF: Input Voltage Detection  
IPFF: Input Voltage Hysteresis  
IPFF: Input Voltage Filter Time  
IPFF: HS Peak Current Detection  
IPFF: HS Peak Current Filter Time  
VPRE Thermal Warning Threshold  
VPRE Thermal Shutdown Threshold  
VPRE Thermal Shutdown Hysteresis  
VPRE External Capacitor  
VPREUVHYST  
VSUP_IPFF  
V
V
VSUP_IPFF_HYST  
t_VSUP_IPFF  
IPRE_IPFF_PK  
t_IPRE_IPFF  
TPRE_TWARN  
TPRE_TSD  
0.2  
1.0  
2.2  
100  
V
4.0  
μs  
A
300  
ns  
°C  
°C  
°C  
μF  
mΩ  
(10)  
(10)  
(10)  
(10)  
(10)  
125  
160  
10  
TPRE_TSD_HYS  
CVPRE  
47  
VPRE External Capacitor ESR  
RVPRE  
100  
Buck converter  
Output Voltage VPRE  
VPREBUCK  
6.3  
6.5  
6.7  
V
• VBATP = VBATP(THD or THU) to 36 V  
VSW Drain-source On-resistance  
• ID = 500 mA, VBATP = 9.0 V  
RDS(on)  
Boost converter  
VPREBST  
300  
mΩ  
Output Voltage VPRE in Boost Mode  
6.0  
6.3  
7.0  
V
• VBATP = 2.5 V to VBATP (THD or THU), IVPRE = -550 mA  
VPREGATE Output Voltage, Power MOSFET ON  
VPREGATE Source Continuous Current  
VPREGATE Sink Continuous Current  
VG  
ISOURCE  
ISINK  
VPRE  
3.5  
4.0  
350  
350  
V
(10)  
(10)  
mA  
mA  
200  
500  
Notes  
10. Guaranteed by design.  
33909  
NXP Semiconductors  
10  
ELECTRICAL CHARACTERISTICS  
Table 5. Static electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V DC to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
VDD voltage regulator, VDD pin  
Output voltage (5.0 V device)  
VOUT5  
4.9  
3.23  
-90  
5.0  
3.3  
5.1  
3.367  
-60  
V
V
• VBATP = 2.5 V to 35 V, IOUT = 0 mA to 500 mA, Normal mode  
Output voltage (3.3 V device)  
VOUT3  
• VBATP = 2.5 V to 35 V, IOUT = 0 mA to 500 mA, Normal mode  
VDD Short-circuit Current  
ISCVDD  
mA  
mA  
• VDD = 1.65 V, VSCFDIFF = VPRE-VDDE  
VDD Foldback Current Limit  
IVDD_FBILIM  
-60  
-30  
• VDD = 0.5 V, VSCFDIFF = VPRE-VDDE  
VDD Foldback Current Limit Threshold (VDD voltage when foldback  
current kicks in)  
VDD_FB  
IVDDBC  
0.5  
25  
40  
1.075  
1.65  
V
VDD Base Current Capability  
mA  
dB  
PSRR (Power supply rejection ratio)  
• f = 350 kHz to 500 kHz  
(11)  
PSRRVDD  
(11)  
(11)  
Range of Decoupling Capacitor  
External capacitor ESR  
CEXT  
4.7  
10  
100  
100  
μF  
R3CAPESR  
mΩ  
Low-power Mode VDDON, output voltage (5.0 V device)  
• IOUT 40 mA (time limited), VBATP 8.5 V  
VDDLP5  
4.7  
5.0  
5.25  
V
• IOUT 20 mA (time limited), VBATP 5.5 V  
Low-power Mode VDDON, output voltage (3.3 V device)  
• IOUT 40 mA (time limited), VBATP 8.5 V  
• IOUT 20 mA (time limited), VBATP 5.5 V  
VDDLP3  
3.135  
2.0  
3.3  
5.0  
3.465  
9.0  
V
Low-power Wake-up Current Threshold, VBATP 6.0 V  
ILP-ITH  
mA  
Voltage regulator for CAN interface supply, CAN5V pin  
Output Voltage  
5VCANOUT  
4.75  
5.0  
5.25  
V
• IOUT = 0 mA to 200 mA, VBATP = 5.5 V to 40 V  
Output Current Limitation  
Undervoltage Threshold Falling  
Undervoltage Threshold Rising  
Undervoltage Hysteresis  
Thermal Shutdown  
5VCANILIM  
5VCANUV  
5VCANUV  
5VCANUV  
5VCANTS  
CEXT-CAN  
200  
4.0  
mA  
V
4.7  
4.75  
0.3  
4.0  
V
0.05  
160  
1.0  
0.1  
V
(11)  
(11)  
°C  
μF  
External Capacitance  
100  
Notes  
11. Guaranteed by design.  
33909  
11  
NXP Semiconductors  
ELECTRICAL CHARACTERISTICS  
Table 5. Static electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V DC to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
V Auxiliary output, 5.0 V and 3.3 V selectable VB-AUX, VAUX pin  
VAUX Output Voltage 5.0 V  
VAUX5  
4.85  
3.2  
5.0  
3.3  
5.15  
3.4  
V
V
• IOUT = 0 mA to 200 mA  
VAUX Output Voltage 3.3 V  
VAUX3  
• IOUT = 0 mA to 200 mA  
VAUX Undervoltage Detector 5.0 V  
VAUX Undervoltage Detector 3.3 V  
VAUX-UVTH5  
VAUX-UVTH3  
4.2  
4.5  
3.0  
4.75  
3.1  
V
V
2.75  
VAUX-OVTH  
VAUX-SBDL  
VAUX Overvoltage  
5.6  
VDD-15 mV  
200  
6.0  
VDD  
7.0  
VDD+15 mv  
360  
V
V
• VAUX Short to Battery Detection Level  
VAUX Tracking Supply  
VAUX_TRACK  
• VDD = 5.0 V only, IAUX = 100 mA  
VAUX Current Limit  
• VAUX = 1.65 V  
IAUX-ILIM  
mA  
VAUX Fold-back Current Limit  
• VAUX < VAUX-FB  
IAUX-FBILIM  
120  
0.5  
230  
mA  
V
VAUXE Fold-back Current Limit Threshold - VAUX level at which Fold-  
back Current Kicks In  
VAUX-FB  
1.075  
1.65  
VAUX Short to Battery Leakage  
VAUX Base Current Capability  
IAUX-SBLK  
IVAUXBC  
C3CAP  
0.0  
10  
15  
µA  
mA  
μF  
(12)  
(12)  
External Capacitance  
2.2  
10  
100  
100  
External Capacitor ESR - Includes PCB Impedance  
R3CAPESR  
mΩ  
Undervoltage reset and reset function, RST_B pin  
VDD Undervoltage Threshold 5H, 5.0 V device (falling)  
VST-TH5H  
VST-TH5L  
VST-TH3L  
VST-TH3H  
VST-HYST  
VST-TH3L  
VSVDD-OV  
VOL  
4.25  
2.75  
1.85  
2.75  
50  
4.5  
3.3  
4.75  
3.4  
2.05  
3.15  
500  
500  
6.0  
500  
25  
V
V
VDD Undervoltage Reset Threshold 5L,5.0 V device (falling)  
VDD Undervoltage Threshold 3L, 3.3 V device (falling)  
VDD Undervoltage 3H 3.3 V device (falling)  
VDD Undervoltage Hysteresis, 5.0 V device  
VDD Undervoltage Hysteresis, 3.3 V device  
VDD Overvoltage  
V
V
100  
100  
mV  
mV  
V
40  
5.5  
RST_B VOL at 1.5 mA, V  
= 2.5 V to 35 V  
mV  
mA  
kΩ  
V
BATP  
I
RST_B Sink Current - VRESET Driven Low (25 °C Only)  
Pull-up Resistor (to VDD pin)  
5.0  
10  
7.0  
20  
0.4  
SINKRESET  
RPULL-UP  
RST_B input Threshold  
VST-VTH  
RST_B Input Hysteresis  
VRST-HYST  
450  
950  
mV  
Notes  
12. Guaranteed by design.  
33909  
NXP Semiconductors  
12  
ELECTRICAL CHARACTERISTICS  
Table 5. Static electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V DC to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
VBATSNS input  
VBATSNS Resistor Divider (VBATP = 27 V)  
• 5.0 V device, Divider 1/5.94  
VACC5  
VACC3  
5.0  
5.0  
%
• 3.3 V device, Divider 1/8.9  
Input Resistor to GND. In all modes except in Low-power modes  
RVBATSNS  
Analog MUX output  
CMUX  
50  
kΩ  
(13)  
(13)  
External Capacitor at AMUX Output  
4.0  
1.0  
nF  
mV/°C  
mV  
Chip Temperature Sensor Coefficient  
Input Offset Voltage when Selected as Analog  
TEMP-COEFF  
VOFFSET  
-10  
10  
Analog Operational Amplifier Output Voltage  
• Sink 250 µA  
VOL  
50  
mV  
V
Analog Operational Amplifier Output Voltage  
• Source 250 µA  
VOH  
VDD -0.1  
VDD +0.1  
Temperature limit  
(13)  
(13)  
Temperature monitor  
TLIM  
155  
5.0  
185  
15  
°C  
°C  
Temperature Monitor Hysteresis  
TLIM(HYS)  
WDI input  
SAFE_B Mode A  
RWDIA  
RWDIB1  
RWDIB2  
RWDIB3  
2.5  
14  
40  
kΩ  
kΩ  
kΩ  
kΩ  
V
• External Resistor to GND on WDI pin  
SAFE_B Mode B1  
7.0  
29  
80  
8.0  
• External Resistor to GND on WDI pin  
SAFE_B Mode B2  
• External Resistor to GND on WDI pin  
SAFE_B Mode B3  
• External Resistor to GND on WDI pin  
Watchdog Inhibit for Debug  
• For Watchdog inhibit mode  
VWDIT  
SAFE output  
SAFE_B Sink Current  
I
mA  
V
SINKSAFE_B  
• SAFE_B driven low (25 °C only)  
2.5  
0.0  
SAFE_B Low Level  
• I = 500 μA  
VOLSAFE  
1.0  
1.0  
SAFE_B Leakage Current (VDDLOW, or device unpowered)  
• VSAFE_B = 35 V  
I
μA  
SAFE_B-IN  
-1.0  
0.0  
Notes  
13. Guaranteed by design.  
33909  
13  
NXP Semiconductors  
ELECTRICAL CHARACTERISTICS  
Table 5. Static electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V DC to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Interrupt  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
Output Low Voltage - IOUT = 1.5 mA  
VOLINT  
VOHINT  
RPU  
0.2  
1.0  
V
V
INT_B Voltage High - INT_B = Open circuit  
Pull-up Resistor  
VDD -0.5  
VDD +0.1  
10  
20  
7.5  
25  
25  
kΩ  
mA  
Sink Current - VINT > 5.0 V, INT Driven Low (25 °C only)  
ISINKINT  
2.5  
CAN logic input pins (TXD)  
High Level Input Voltage  
VIH  
VIL  
0.7 x VDD  
V
V
Low Level Input Voltage  
Pull-up resistor - VIN = 0 V  
0.3 x VDD  
66  
RPUCAN  
22  
33  
kΩ  
CAN data output pins (RXD)  
Low Level Output Voltage - IRXD = 5.0 mA  
VOUTLOW  
VOUTHIGH  
IOUTHIGH  
IOUTLOW  
0.3 x VDD  
VDD  
0.0  
V
V
High Level Output Voltage - IRXD = -3.0 mA  
High Level Output Current - VRXD = VIO - 0.4 V  
Low Level Output Current - VRXD = 0.4 V  
0.7 x VDD  
-6.0  
2.0  
-3.0  
5.0  
-1.0  
mA  
mA  
12  
CAN output pins (CANH, CANL) - RBUS = 60 Ω for product test  
Bus Pins Common Mode Voltage for Full Functionality  
(voltage range for CAN test)  
VCOM  
-15  
20  
V
Differential Input Voltage Threshold  
Differential Input Hysteresis  
Input Resistance  
VCANH-VCANL  
VDIFF-HYST  
RIN  
500  
100  
5.0  
10  
900  
-
mV  
mV  
kΩ  
kΩ  
%
50  
Differential Input Resistance  
Input Resistance Matching  
RIN-DIFF  
100  
3.0  
RIN-MATCH  
-3.0  
0.0  
CANH Output Voltage (45 Ω < RBUS < 65 Ω)  
• TX dominant state  
VCANH  
2.75  
2.0  
3.5  
2.5  
4.5  
3.0  
V
V
V
• TX recessive state  
CANL Output Voltage (45 Ω < RBUS < 65 Ω)  
• TX dominant state  
VCANL  
0.5  
2.0  
1.5  
2.5  
2.25  
3.0  
• TX recessive state  
Differential Output Voltage (45 Ω < RBUS < 65 Ω)  
• TX dominant state  
VOH-VOL  
1.5  
-0.5  
2.0  
0.0  
3.0  
0.05  
• TX recessive state  
CANH Output Current Capability - Dominant state  
CANL Output Current Capability - Dominant state  
CANL Overcurrent Detection - Error reported in register  
CANH Overcurrent Detection - Error reported in register  
ICANH  
ICANL  
ICANL-OC  
ICANH-OC  
35  
-35  
mA  
mA  
mA  
mA  
-100  
70  
-85  
85  
-70  
100  
CANH, CANL Input Resistance Device Supplied and in CAN Sleep  
Mode, V_CANH, V_CANL from 0 V to 5.0 V  
RINSLEEP  
5.0  
50  
kΩ  
33909  
NXP Semiconductors  
14  
ELECTRICAL CHARACTERISTICS  
Table 5. Static electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V DC to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
CAN output pins (CANH, CANL) - RBUS = 60 Ω for product test (continued)  
CANL, CANH Output Voltage in Sleep and Standby Modes  
(45 Ω < RBUS < 65 Ω)  
VCANLP  
-0.1  
0.0  
0.1  
V
CANH, CANL Input Current, Device Unsupplied, VBATP connected to  
GND  
ICAN  
μA  
µA  
• VCANH, VCANL = 5.0 V  
5.0  
250  
• VCANH, VCANL = -2.0 V to + 7.0 V  
Loss of Ground Leakage Current (GB CZ)  
(14)  
I
250  
LEAKGND  
• VBATP = 12 V  
CANH and CANL diagnostic information  
GND Detection Threshold  
• CANL  
• CANH  
VLG  
VHG  
-200  
4.7  
250  
5.1  
900  
5.7  
mV  
V
VBATP Detection Threshold  
• CANL  
VLVB  
VHVB  
• CANH  
LIN 0-3 pin (parameters guaranteed for 7.0 V < VBATP < 17 V)  
Operating Voltage Range (voltage range for LIN testing)  
Supply Voltage Range (voltage range for LIN testing)  
VBATTERY  
VBATP  
VBATP_NON_OP  
IBUS_LIM  
IBUS_PAS_DOM  
8.0  
7.0  
-0.3  
40  
18  
18  
V
V
Voltage Range within which the Device is Not Destroyed  
Current Limitation for Driver Dominant State Driver ON, VBUS = 18 V  
40  
V
90  
200  
mA  
Input Leakage Current at the Receiver Driver OFF; VBUS = 0 V;  
VBATP = 12 V  
-1.0  
mA  
Leakage Output Current to GND Driver OFF; 7.0 V < VBATP < 17 V;  
8.0 V < VBUS < 18 V  
IBUS_PAS_REC  
20  
μA  
Control Unit Disconnected from GND (Loss of local ground must not  
affect communication in the residual network)  
GNDDEVICE = VBATP, VBATP = 12 V, 0 < VBUS < 18 V  
(14)  
IBUS_NO_GND  
-1.0  
1.0  
mA  
VBATP Disconnected, VBATP_DEVICE = GND, 0 < VBUS < 18 V (Node  
has to sustain the current which can flow under this condition. Bus  
must remain operational under this condition)  
IBUSNO_BAT  
100  
μA  
Receiver Dominant State  
VBUSDOM  
VBUSREC  
VBUS_CNT  
VHYS  
VBATP  
VBATP  
VBATP  
VBATP  
0.6  
0.475  
0.4  
Receiver Recessive State  
Receiver Threshold Center (VTH_DOM + VTH_REC)/2  
0.5  
0.525  
0.175  
Receiver Threshold Hysteresis (VTH_REC - VTH_DOM  
)
Notes  
14. Guaranteed by CZ. Parameter not tested in production.  
33909  
15  
NXP Semiconductors  
ELECTRICAL CHARACTERISTICS  
Table 5. Static electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V DC to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
LIN 0-3 pin (parameters guaranteed for 7.0 V < VBATP < 17 V) (continued)  
Voltage Drop at the Serial Diode in Pull-up Path - High Z State at LINx  
VBATP_SHIFT (GBD)  
VSERDIODE  
VSHIFT_BAT  
VSHIFT_GND  
VBUSWU  
0.4  
0.0  
0.0  
3.2  
20  
5.9  
1.0  
11.5%  
11.5%  
3.8  
V
(15)  
(15)  
VBATP  
VBATP  
GND_SHIFT (GBD)  
LIN Wake-up Threshold from Stop or Sleep Mode  
LIN Pull-up Resistor to VBATP  
3.5  
30  
6.2  
100  
160  
10  
V
kΩ  
V
RSLAVE  
60  
LIN Undervoltage Threshold (rising and falling) (J2602)  
LIN Undervoltage Hysteresis (VUVR – VUVF) (J2602)  
Overtemperature Shutdown  
VUVR, VUVF  
VUVHSY  
6.85  
mV  
°C  
°C  
(15)  
(15)  
TLINSD  
150  
180  
Overtemperature Shutdown Hysteresis  
TLINSD_HYS  
LIN RXD output pins  
VOL_RXDL  
Low Level Output Voltage - IIN 1.5 mA  
0.9  
5.25  
3.5  
V
V
V
High Level Output Voltage (VDD = 5.0 V) - IOUT 250 μA  
High Level Output Voltage (VDD = 3.3 V) - IOUT 250 μA  
4.25  
3.0  
VOH_RXDL5  
VOH_RXDL3  
LIN TXD input pins  
Low Level Input Voltage  
0.3 x VDD  
V
VIL_TXDL  
High Level Input Voltage  
0.7 x VDD  
V
VIH_TXDL  
VINHYSTL  
Input Threshold Voltage Hysteresis  
Pull-up Resistor - VIN = 0.0 V  
450  
22  
950  
66  
mV  
kΩ  
R
33  
PULLIN  
Switch input  
Leakage (SGx pins) to GND  
ILEAKSG_GND  
• Inputs tristated, analog mux selected for each input, voltage at  
SGx = GND  
µA  
µA  
2.0  
2.0  
Leakage (SGx pins) to Battery  
ILEAKSG_BAT  
• Inputs tristated, analog mux selected for each input, voltage at  
SGx = VBATP  
Leakage (SGx pins) Voltage at SGx = 36 V, VBATP and VPRE = 0 V  
Pulse Wetting Current 1 - Mode 1 IPULSE1 = 6.0 mA  
Pulse Wetting Current 2 - Mode 2 IPULSE2 = 8.0 mA  
Pulse Wetting Current 3 - Mode 3 IPULSE1 = 10 mA  
ILEAKSG_WE  
IWET1  
2.0  
6.6  
8.8  
11  
µA  
mA  
mA  
mA  
5.4  
7.2  
9.0  
IWET2  
IWET3  
Notes  
15. Guaranteed by design.  
33909  
NXP Semiconductors  
16  
ELECTRICAL CHARACTERISTICS  
Table 5. Static electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V DC to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
Switch input (continued)  
Pulse Wetting Current 4 - Mode 4 IPULSE2 = 12 mA  
Pulse Wetting Current 5 - Mode 5 IPULSE3 = 14 mA  
Pulse Wetting Current 6 - Mode 6 IPULSE4 = 16 mA  
Pulse Wetting Current 7 - Mode 7 IPULSE5 = 20 mA  
Sustain Current  
IWET4  
IWET5  
10.8  
12.6  
14.4  
18  
13.2  
15.4  
17.6  
22  
mA  
mA  
mA  
mA  
mA  
IWET6  
IWET7  
ISUSTAIN  
1.60  
2.40  
Matching Between SG Channels (2.0 mA)  
ISUS(MAX) – ISUS(MIN) X 100  
ISUS(AVG)  
IMATCH(SUS)  
-10  
10  
%
%
Matching Between SG Channels (6, 8, 10, 12, 14, 16, and 20 mA)  
IWET(MAX) – IWET(MIN) X 100  
IWET(AVG)  
IMATCH(WET)  
-5.0  
5.0  
Switch Detection Threshold - Normal mode  
Low-power Polling Current  
VICTHR  
3.20  
0.850  
100  
3.8  
1.35  
350  
V
ISUSTAINLP  
1.1  
210  
mA  
mV  
Low-power Switch Detection Threshold  
VLPICTHR  
Digital interface  
VIH  
Input Logic High Voltage Thresholds (MISO, MOSI, SCLK, CS_B)  
Input Logic Low Voltage Thresholds (MISO, MOSI, SCLK, CS_B)  
0.7 X VDD  
V
V
VIL  
IHZ  
0.2 X VDD  
-2.0  
Tri-state Leakage Current (MISO) - V  
= 0.0 V to V  
DD  
2.0  
3.0  
µA  
µA  
µA  
µA  
µA  
V
DD  
SCLK/MOSI Input Current - SCLK/MOSI = 0.0 V  
SCLK/MOSI Pull-down Current - SCLK/MOSI = V  
CS_B Input Current - CS = VDD  
ISCLK, IMOSI  
ISCLK, IMOSI  
ICS_B  
-3.0  
-5.0  
-15  
DD  
-10  
10  
CS_B Pull-up Current- CS = 0.0 V  
ICS_B  
30  
100  
MISO High-side Output Voltage - ISO(HIGH) = -200 µA  
MISO Low-side Output Voltage - ISO(LOW) = 1.6 mA  
Input Capacitance on SCLK, MOSI, Tri-state MISO  
VSO(HIGH)  
VSO(LOW)  
CIN  
VDD – 0.8  
VDD + 0.3  
0.40  
20  
V
(16)  
pF  
Notes  
16. Guaranteed by characterization in the development phase, parameter not tested.  
33909  
17  
NXP Semiconductors  
ELECTRICAL CHARACTERISTICS  
3.3  
Dynamic electrical characteristics  
Table 6. Dynamic electrical characteristics  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Switch input  
tPULSE(ON)  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
(17)  
(17)  
(17)  
(17)  
(17)  
(18)  
Pulse Wetting Current Timer - Normal Mode  
Interrupt Delay Time - Normal Mode  
18  
22  
16  
20  
20  
66  
9.1  
ms  
µs  
%
tINT-DLY  
tSCAN TIMER  
tINT TIMER  
Scan Timer Accuracy - Low-power Mode  
Interrupt Timer Accuracy - Low-power Mode  
Tscan Timer (time actual polling takes place) - Low-power Mode  
Glitch Filter Timer - Normal Mode  
%
tTSCAN TIME  
44  
55  
µs  
µs  
tGLITCH TIMER  
Digital interface timing  
(18)  
(17)  
(17)  
(17)  
(17)  
(17)  
(17)  
(17)  
(17)  
(17)  
(17)  
(17)  
(17)  
(17)  
(17)  
Transfer Frequency  
fOP  
tSCK  
tLEAD  
tLAG  
tSCKHS  
tSCKLS  
tSUS  
tHS  
160  
140  
50  
56  
56  
16  
20  
6.25  
MHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
SCLK Period - 1  
Enable Lead Time - 2  
Enable Lag Time - 3  
SCLK High Time - 4  
SCLK Low Time - 5  
MOSI Input Setup Time - 6  
MOSI Input Hold Time - 7  
MISO Access Time - 8  
tA  
116  
100  
116  
MISO Disable Time - 9  
tDIS  
MISO Output Valid Time - 10  
MISO Output Hold Time (No cap on MISO) - 11  
Rise Time (Design Information) - 12  
Fall Time (Design Information) - 13  
CS_B Negated Time - 14  
tVS  
tHO  
20  
tRO  
30  
30  
tFO  
tCSN  
500  
Supply, voltage regulator, reset  
(17)  
(18)  
VBATP Undervoltage Detector Threshold Deglitcher  
tS_LOW1/2 DGLT  
30  
50  
10  
100  
20  
µs  
µs  
Deglitcher Time to Set Reset Pin Low  
tRST-DGLT  
VPREGATE  
tVPREMST  
(17)  
VPREGATE (mode select) Time  
150  
µs  
Notes  
17. Guaranteed by CZ. Parameter not tested in production. All SPI timing is performed with a 100 pF load on MISO, unless otherwise noted.  
18. Guaranteed by design.  
33909  
NXP Semiconductors  
18  
ELECTRICAL CHARACTERISTICS  
Table 6. Dynamic electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
VPRE  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
V/ms  
V/ms  
Notes  
VPRE Soft start Ramp cap. = 57 µF  
VPRESS  
5.0  
12  
25  
VDD regulator  
VDD Soft Start Ramp - CVDD = 10 µF; I = 10 mA  
V
5.0  
12  
25  
DD_SS  
VAUX regulator  
VAUX Soft Start Ramp (non-tracking mode) - CVAUX = 10 µF; I =  
10 mA  
V
5.0  
5.0  
12  
25  
25  
V/ms  
V/ms  
AUX_SS  
V
VAUX Soft Start Ramp (tracking mode) - CVAUX = 10 µF; I = 10 mA  
AUX_SSTR  
Reset pulse duration  
VDD Undervoltage (SPI selectable)  
• Short, default at power ON when BATFAIL bit set  
1.0  
5.0  
10  
(19)  
(19)  
(20)  
• Medium  
• Medium long  
• Long  
tRST-PULSE  
ms  
ms  
20  
Watchdog Reset  
tRST-WD  
1.0  
AMUX output  
AMUX Access Time (Selected output to selected output)  
• CMUX = 1.0 nF Rising edge of CS_B to selected  
tAMUX-VALID  
20  
µs  
µs  
AMUX Access Time (Tri-state to ON)  
tAMUX-VALID  
20  
• CMUX = 1.0 nF Rising edge of CS_B to selected  
Oscillator  
tOSC-TOL  
Interrupt  
Oscillator Tolerance  
-5.0  
5.0  
µs  
µs  
INT pulse duration (refer to SPI)  
(19)  
• Short  
• Medium  
t
25  
100  
INT-PULSE  
Notes  
19. Guaranteed by design.  
20. AMUX settling time to be within 10 mV accuracy. AMUXVALID is dependent of the voltage step applied on the source SGx pin, or the difference  
between the first and second channel selected as the multiplexed analog output. See Figure 10 for a typical AMUX access time versus voltage  
step waveform.  
33909  
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NXP Semiconductors  
ELECTRICAL CHARACTERISTICS  
Table 6. Dynamic electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
CAN dynamic characteristics  
TXD Dominant State Timeout  
Bus Dominant Clamping Detection  
tDOUT  
tDOM  
0.8  
0.8  
1.8  
1.6  
2.8  
2.8  
ms  
ms  
Propagation Loop Delay TXD to RXD, recessive to dominant (Slew  
rate 0)  
tLRD  
60  
120  
210  
ns  
Propagation Delay TXD to CAN, recessive to dominant  
Propagation Delay CAN to RXD, recessive to dominant  
Propagation Loop Delay TXD to RXD, dominant to recessive  
Propagation Delay TXD to CAN, dominant to recessive  
Propagation Delay CAN to RXD, dominant to recessive  
tTRD  
tRRD  
tLDR  
tTDR  
tRDR  
70  
45  
110  
140  
255  
150  
140  
ns  
ns  
ns  
ns  
ns  
100  
120  
75  
50  
LIN 1-4 physical layer: driver characteristics for normal slew rate - 20.0 kBit/sec according to lin physical layer specification bus load RBUS and  
C
BUS 1.0 nF/1.0 k, 6. nF/660, 10 nF/500. Measurement thresholds: 50% of TXD signal to LIN signal threshold defined at each parameter. (21)  
Duty Cycle 1:  
• THREC (max) = 0.744 * VBATP  
D1  
D2  
0.396  
• THDOM (max) = 0.581 * VBATP  
• D1 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 50 µs, 7.0 V VBATP 18 V  
Duty Cycle 2:  
• THREC (min.) = 0.422 * VBATP  
0.581  
• THDOM (min.) = 0.284 * VBATP  
• D2 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 50 µs, 7.6 V VBATP 18 V  
LIN physical layer: driver characteristics for slow slew rate - 10.4 kBit/sec according to lin physical layer specification (48), (50) bus load RBUS  
and CBUS 1.0 nF/1.0 k, 6.8 nF/660, 10 nF/500. Measurement thresholds: 50% of TXD signal to LIN signal threshold defined at each parameter. (22)  
Duty Cycle 3:  
• THREC (max) = 0.778 * VBATP  
D3  
D4  
0.417  
• THDOM (max) = 0.616 * VBATP  
• D3 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 96 µs, 7.0 V VBATP 18 V  
Duty Cycle 4:  
• THREC (min.) = 0.389 * VBATP  
0.59  
100  
• THDOM (min.) = 0.251 * VBATP  
• D4 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 96 µs, 7.6 V VBATP 18 V  
LIN physical layer: driver characteristics for fast slew rate  
LIN Fast Slew Rate (Programming mode)  
BRFAST  
20  
kBits/s  
Notes  
21. See Figure 4.  
22. See Figure 5.  
33909  
NXP Semiconductors  
20  
ELECTRICAL CHARACTERISTICS  
Table 6. Dynamic electrical characteristics (continued)  
Characteristics noted under conditions TCASE = -40 °C to 125 °C, Battery Voltage = 3.5 V to 28 V DC (VBATP = 2.5 V to 27 V DC),  
unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless  
otherwise noted.  
Symbol  
Characteristic  
Min.  
Typ.  
Max.  
Unit  
Notes  
LIN physical layer: characteristics and wake-up timings, VBATP from 7.0 V to 18 V, bus load RBUS and CBUS 1.0 nF/1.0 k, 6.8 nF/660, 10 nF/500.  
Measurement thresholds: 50% of TXD signal to LIN signal threshold defined at each parameter. (23)  
Propagation Delay of Receiver, tREC_PD = MAX (tREC_PDR, tREC_PDF  
Symmetry of Receiver Propagation Delay, tREC_PDF - tREC_PDR  
)
tREC_PD  
4.2  
6.0  
2.0  
µs  
µs  
tREC_SYM  
-2.0  
Bus Wake-up Deglitcher (Sleep and Stop modes) (See Figure 9 for  
Sleep and Figure 11 for Low-power mode.)  
(24)  
tPROPWL  
42  
70  
95  
µs  
Bus Wake-up Event Reported  
• From Sleep Mode  
• From Stop Mode  
(24)  
(24)  
tWAKE_SLEEP  
tWAKE_STOP  
9.0  
250  
27  
35  
µs  
s
TXD Permanent Dominant State Delay  
tTXDDOM  
0.65  
1.0  
1.35  
Notes  
23. See Figure 6 and Figure 7.  
24. Guaranteed by characterization.  
3.4  
Timing diagrams  
Figure 4. LIN timing measurements for normal slew rate  
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NXP Semiconductors  
ELECTRICAL CHARACTERISTICS  
Figure 5. LIN timing measurements for slow slew rate  
Figure 6. LIN receiver timing  
Figure 7. LIN wake-up timing from low-power VDD off mode  
33909  
NXP Semiconductors  
22  
ELECTRICAL CHARACTERISTICS  
Figure 8. LIN wake-up timing from low-power VDD on mode  
3
14  
CS_B  
1
4
2
SCLK  
5
10  
9
8
11  
DON'T  
CARE  
MISO  
DATA  
MSB OUT  
MSB IN  
LSB OUT  
12 13  
7
6
MOSI  
DATA  
LSB IN  
Figure 9. SPI timing diagram  
33909  
23  
NXP Semiconductors  
ELECTRICAL CHARACTERISTICS  
Figure 10. AMUX access time  
33909  
NXP Semiconductors  
24  
FUNCTIONAL DEVICE OPERATION  
4
Functional device operation  
4.1  
Battery voltage ranges  
The 33909 device operates from 3.5 V Battery 36 V (2.5 V VBATP 35 V) and can survive to 41 V Battery. Overvoltage kicks in at  
VBATP > 35 V and shuts down main functions of the IC. Battery voltages in excess of 41 V must be clamped externally in order to protect  
the IC from destruction. The VBATP pin must be isolated from the main battery node by a diode.  
Battery Voltage  
41 V  
VBATP  
40 V  
Survivable  
36 V  
28 V  
35 V  
27V  
Full  
Parametrics  
Normal Mode  
Full Parametrics  
8.0 V  
7.0 V  
Full Parametrics  
3.5 V  
3.3 V  
2.5 V  
2.3 V  
POR activated  
No operation  
0 V  
0 V  
Figure 11. 33909 (buck - boost mode) battery diagram  
33909  
25  
NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
Battery Voltage  
41 V  
VBATP  
40 V  
Survivable  
36 V  
28 V  
35 V  
27 V  
Full  
Parametrics  
Normal Mode  
Full Parametrics  
8.0 V  
7.0 V  
Degraded Parametrics  
3.5 V  
3.3 V  
2.5 V  
2.3 V  
POR activated  
No operation  
0 V  
0 V  
Figure 12. 33909 (buck only mode) battery diagram  
4.1.1  
POR  
A Power On Reset occurs between 2.3 V < VBATP < 2.5 V. The 33909 is held in reset when VBATP < PORFALLING. The 33909 re-  
initializes after the POR is de-asserted (VBATP_MIN_SU).  
4.1.2  
No operation  
No operation in this range. The device does not send or receive SPI commands, and must reset properly upon leaving this range (when  
battery is supplied). No unintended leakage currents flows causing undesired effects.  
4.1.3  
Start-up requirements  
Upon application of voltage to the VBATP node, the IC does not supply the VDD and VAUX voltage rails until all parameters can be  
guaranteed. Internal circuitry can power up and begin to function, but the supply rails remain OFF until a stable output voltage (VDD and  
VAUX) can be supplied. A typical voltage of 7.2 V on VBATP is expected to be the value where VDD and VAUX would be able to regulate  
within specified range (another voltage may be determined to be the correct value, 7.0 V is a guide). This allows the micro to power up in  
a known state with no glitches due to the power supply.  
Upon startup of the VDD and VAUX rails, a soft start circuit limits the turn ON time of the rails (15 V/ms typical - dVDD/dt), to reduce the  
overshoot of the regulated voltages. Figure 13 shows the desired waveform for the startup of the VDD and VAUX supplies.  
33909  
NXP Semiconductors  
26  
FUNCTIONAL DEVICE OPERATION  
VBATP_st  
VBATP  
Vint_2.5  
Vpre_EN  
Vpre_UV  
Tdelay_VPREINT  
Vpre  
Vpre_INT_Buffer  
(Low Power)  
VDD_UV  
Tdelay_VDDINT  
VDD  
VDD_INT_Buffer  
(Low power)  
INT_B  
RESET_B  
Startup and  
IC states  
Figure 13. Power up sequencing  
33909  
27  
NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
VBATP_MIN_SU  
5.0v  
PORFALLING  
2.5v  
VBATP  
Buck / Boost On  
VPRE_EN  
Figure 14. VBATP start-up and POR  
4.1.4  
Power supply functional block  
This block has the VBATP supply and VPRE supply as an input. The internal 2.5 V rail is generated in this block. Power On Reset (POR),  
Sleep mode power, and the Bandgap reference are controlled here as well.  
4.2  
Input functional block  
There are six Switch-to-Ground inputs used to detect switch closures and provide wetting current. The main functions of this block is to  
detect a change of state at the input via a 3.5 V (typical) comparator, provide a signal to the main logic to issue an interrupt signal, and  
also provide wetting/sustain current for the switch. A SPI read allows the micro to know the status of all the inputs.  
4.2.1  
SG inputs  
The SG inputs are switch to ground detect inputs with a comparator threshold (VICTHR - 3.5 V typical). A closed switch is a switch shorted  
to ground (or otherwise below the VICTHR value) and is reported via the SPI as a logic 1. An open switch is any condition causing the  
input voltage to rise above the VICTHR value, and is reported via the SPI as a logic 0. In the case where the user needs a Switch to  
Battery, the user must take note that the IC reports a logic 1 when the input voltage is less then VICTHR. The inputs also provide a wetting  
current output with selectable values ranging from 6.0 to 20 mA (IWETX) in steps of 2.0 mA. A sustain (ISUSTAIN) current level is used to  
decrease power consumption in the IC. The current sources are pull-up sources with a reference of VPRE. A blocking diode is in series  
with the current source to block voltages at the input greater than the VPRE from back feeding into the IC. Due to this diode, the maximum  
voltage the SGx pins can pull up to is ~ 6.5 V (VPRE) - 1 diode drop (~0.7 V) for a final value of ~5.7 V. This use greatly benefits the power  
consumption of the input current sources, but does limit headroom when using the current sources to drive external loads. VPRE voltage  
is supplied during Normal (via the SMPS) and Low-power modes (via internal linear). Battery voltages below 7.0 V are not supported in  
Low-power mode.  
All register settings programmed in Normal mode are remembered in Sleep mode. The current used to detect open switches in Low-power  
mode is ~1.0 mA. Upon leaving Low-power mode the programmed settings are used.  
In Low-power mode, the inputs do not use the typical 3.5 V switch threshold. Rather a comparison threshold is used to measure the  
beginning of the tSCAN time (before the LPM current source is turned on) and after the tSCAN timer (typical 55 μs) has completed. If this  
voltage has passed the low-power switch detection threshold (typ 210 mV), the IC detects an open switch and compares to the internal  
logic to determine if a change of state has occurred.  
Figure 16 describes the state diagram for the SGx inputs and how they move from state to state. Of note is the three times retry of the  
wetting current (IPRGM in this notation) in case of a tLIM. This allows for one time thermal events to be dealt with and still operate normally  
when able. After three times tLIM, the input goes to tri-state and wait for the user to clear the tLIM fault via the SPI word.  
In the case where a SAFE mode operation would like to sense the key OFF condition of the module, SG0 is used in conjunction with the  
WDI pin to facilitate the SAFE operation and turn OFF the VDD supply.  
33909  
NXP Semiconductors  
28  
FUNCTIONAL DEVICE OPERATION  
Go To LPM  
CS_B  
64ms (config)  
Normal  
Mode  
Normal  
LPM  
Polling time  
Tscan time  
55us  
X * 1mA SG  
Load Current  
0uA  
Figure 15. Low-power mode typical timing diagram  
33909  
29  
NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
Tri-state  
I = 0 mA  
1
4
3
5
10  
11  
7
6
IWETTING  
LPM (1.0 mA)  
ISUSTAIN  
2
8
9
1) Change from 0 mA to Wetting current value: Wetting current programmed to all time or Pulsed  
Mode and untristate the input.  
2) Maintain Wetting current: When switch is closed to ground and 20 ms timer not expired (wetting  
current timer enabled).  
3) Change from Wetting Current to 0 mA: Go to Low Power mode (LPM) or Tri-state command sent.  
4) Change from 0 mA to Sustain current (2.0 mA): Wetting current off command sent and untri-state.  
5) Change from Sustain current to 0 mA: Go to LPM or Tri-state command  
6) Change from LPM to Wetting current: Wake-up and not in Wetting current off mode.  
7) Change from LPM to Sustain current: Wake-up and in Wetting current off mode.  
8) Change from Sustain to Wetting current: Switch opens and wetting current timer on or a SPI  
message to turn Wetting current on.  
9) Change from Wetting current to Sustain: Closed switch and timer expired or a SPI message  
turning Wetting current off.  
10) Change from 0 mA to LPM current: During active scan timer (100 us long) in LPM (Periodic  
sense).  
11) Change from LPM current to 0 mA: During inactive scan timer in LPM.  
Note 1. Three Tlim instances on the SG sensor puts the device into Sustain only mode for the SGs.  
A SPI read clears the function and allows wetting current to be active again.  
Note 2. Overvoltage on the VBATP pin causes the SG inputs to switch to Sustain only until the  
overvoltage condition is gone.  
Note 3. A POR results in the IC resetting and the SG inputs back in the Tri-state condition.  
Figure 16. 33909 SG state diagram  
4.2.1.1  
Alternative functions of the SG0 pin  
There are some additional functions for SG0. These functions are described in the block most closely associated with their additional  
functions.  
1. SG0 can be used in conjunction with the SAFE mode to determine how the IC should operate when a SAFE condition is detected.  
See Table 7 for information on SAFE mode operation.  
4.2.2  
SG input pin functions: SGx  
Each input pin is the connection used by the user to determine the state of the switch, and source the wetting and sustain currents. A  
capacitor is required on the input with a minimum value of 47 nF (CAPSG) and a maximum capacitance of 100 nF. Characterization of  
the input defines the available capacitor range.  
33909  
NXP Semiconductors  
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FUNCTIONAL DEVICE OPERATION  
4.2.3  
Oscillator and timer control functional block  
The oscillator is generated in this block. All timers are generated from the reference oscillator. The oscillator is trimmed to 5.0%. There  
is no external pin for the oscillator and timer control block. The 5.0% oscillator is turned OFF in Low-power mode to reduce quiescent  
current.  
A second oscillator is used in Low-power mode. The oscillator operates at 200 kHz and is accurate to 20%. All of the Low-power mode  
timers are based on this Low-power oscillator.  
4.2.4  
TLIM functional block  
The device has multiple tlim cells to detect thermal excursions. An independent tLIM cell exists for multiple circuit blocks including:  
1. CAN regulator  
2. VPRE circuitry  
3. SG inputs  
4. LIN cells  
The corresponding block contains the description of what occurs when tLIM is seen by the related circuitry. Hysteresis for each cell is used  
to keep the device from cycling. There is no external pin connection for the tLIM functional block.  
4.2.4.1  
INT_B functional block  
This block is used to alert the micro to a change of state on an input. The INT_B pin is an interrupt output from the 33909 device. The  
INT_B pin is an open-drain output with an internal pull-up to VDD. In Normal mode, a switch state change triggers the INT_B pin (when  
enabled). The INT_B pin and INT_B bit in the SPI register are latched on the falling edge of CS_B. This permits the MCU to determine  
the origin of the interrupt. The INT_B pin is cleared on the rising edge of CS_B. The INT_B pin does not clear with rising edge of CS_B if  
a switch contact change has occurred while CS_B was LOW.  
4.2.5  
INT_B pin functions: INT_B  
The INT_B output is asserted low or drives a pulse when an interrupt condition occurs. The INT condition is enabled in the INT register.  
The INT_B operation (assertion of a low level or a pulse) is defined by the SPI.  
4.2.6  
SAFE_B functional block  
This mode is entered when specific fail conditions occur. The “Safe state” condition defaults to condition A in Table 7. A SPI word can  
then be used to modify the operation as found in Table 7. Safe mode is entered after additional event or conditions are met: timeout for  
CAN communication. Exit of the Safe state is always possible by a wake-up event: in the safe state the device is automatically wakeable  
CAN. Upon wake-up, the device operation is resumed: enter in Reset mode.  
4.2.6.1  
Debug detect  
The operation of the SAFE_B block is determined by the state of the WDI pin and the associated resistance to ground is supplied external  
to the IC. The IC is put into watchdog inhibit mode when the voltage at the WDI pin is > 10 V. This results in a SAFE mode A, but no  
watchdog refresh is needed.  
The debug detect circuit measures an external pull-down resistor on the WDI. Three thresholds exist (excluding the Test mode) and  
outputs to the logic block, in which mode the SAFE_B block should operate (Mode<B3:A>). The mode is read in by determining the resistor  
value on the WDI pin at power ON only (during the INIT RESET node), and remains in this state until a new power ON sequence is  
detected.  
4.2.6.2  
Fail-safe operation  
Fail-safe functionality  
4.2.6.2.1  
Upon a dedicated event or issue, detected at a device pin (i.e RESET), the Safe mode can be entered. In this mode, the SAFE_B pin is  
active low.  
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NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
4.2.6.2.2  
Description  
Upon activation of the SAFE_B pin, and if the failure condition which caused the activation of SAFE_B has not recovered, the device can  
help to reduce ECU consumption, assuming the MCU is not able to set the whole ECU in Low-power mode.  
Two main cases are available:  
• Upon SAFE_B activation, the MCU remains powered (VDD stays ON), until the failure condition recovers (i.e S/W is able to properly  
control the device and properly refresh the W/D).  
• Upon SAFE_B activation, the system continues to monitor external events, and disable the MCU supply (turn VDD off). The external  
events monitored are: SG0 switch to ground and CAN and LIN traffic. For this condition, three sub cases exist: B1,B2, B3.  
Note: CAN and LIN traffic bus idle indicates the ECU of the vehicle is no longer active, thus the car is being parked and stopped.  
SAFE_B mode code  
VDD status  
Remains ON  
A
Turn OFF 8 sec. after CAN and LIN traffic bus idle detection.  
B1  
B2  
B3  
Turn OFF when the SG0 switch is closed to ground.  
Turn OFF 8 sec. after CAN and LIN traffic bus idle detection when SG0 low level is detected.  
Exit of the safe state with VDD OFF is always possible by a wake-up event: in this Safe state the device is automatically wakeable with  
CAN and the SG0 input. Upon wake-up, the device operation is resumed: enter in Reset mode. The SAFE_B pin remains active, until a  
proper read and clear of the SPI flags reporting the SAFE_B conditions.  
Figure 17 illustrates the SAFE_B mode activation and the power consumption reduction after CAN traffic idle time.  
bit 11,12 of INIT command xx(1)  
nth W/D  
failure  
No  
Return to  
Normal mode  
SAFE High  
SAFE Low  
Reset 1.0 ms pulse  
Reset 1.0 ms pulse  
Yes  
bit 11,12 of INIT command 00  
SAFE Low  
7 consecutive  
W/D Failure  
Note (4)  
No (SAFE_B remains low)  
State A: RWDI < 2.5 kΩ  
W/D Failure  
- SAFE Low  
- VDD On  
Yes  
- Reset 1.0 ms  
periodic pulse  
State A: RWDI < 2.5 kΩ  
VDD Low or RESETB  
s/c to ground Failure  
A) Evaluation of  
Resistor detected  
at WDI pin during  
power up or SPI  
register content  
- SAFE Low  
- VDD On  
- Reset Low  
VDD Low Failure:  
VDD < VDD_UVTH  
t > 100ms  
W/D  
Failure  
State B1: 7.0 kΩ < RWDI  
14 kΩ  
<
BUS idle time out expired(2)  
(CAN and LIN)  
State:  
INIT, Normal, Normal  
Request, Flash  
B) ECU external  
signal monitoring  
- bus idle time out  
- SG0 monitoring  
- Reset Low  
- SAFE Low  
- VDD on  
- SAFE Low  
- VDD Off  
- Reset Low  
State B2: 29 kΩ < RWDI < 40 kΩ  
& SG0 Low  
RESET_B short-circuit to  
GND Failure:  
RESET_B < RST-TVH; t > 100 ms  
SAFE_B pin  
release  
State B3: 80 kΩ < RWDI  
BUS idle time out expired(2)  
(CAN and LIN) & SG0 Low  
(SAFE_B High)(3)  
State:  
1.0 ms Reset  
pulse  
Wake-up event, VDD ON, SAFE_B pin remains Low  
Failure recovery, SAFE_B pin remains Low  
Notes:  
1) Bits 11 and 12 of the INIT command control the number of times a reset / Watchdog failure should occur nth  
time: 00 = 1st time, 01  
= 2nd time, 10 = 3rd time, 11 = 5th time.  
2) 8 second timer for bus idle time out.  
3) SPI command to release SAFE_B pin after recovery from failure (5F000000).  
4) Dynamic behavior: 1.0 ms reset pulse every 256 ms due to no watchdog refresh SPI command and the  
device state transitions between RESET and Normal Request or INIT RESET and INIT modes.  
Figure 17. SAFE operation flow chart  
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Table 7. SAFE mode operation  
State  
VDD  
CAN5V  
OFF  
VAUX  
LINx  
SGx  
CAN0  
High-impedance  
OFF: CAN termination 25k to  
Power down  
OFF  
OFF  
OFF  
High-impedance  
High-impedance  
OFF: internal 30 kpull-up  
active. Transmitter: receiver/  
wake-up OFF.  
Init Reset  
ON  
OFF  
OFF  
High-impedance GND Transmitter/receiver /wake-  
up OFF  
INIT  
ON  
ON  
OFF  
OFF  
OFF  
OFF  
High-impedance  
OFF  
Keep SPI  
configuration  
Reset  
SPI configuration OFF  
Normal  
Request  
Keep SPI  
configuration  
ON  
ON  
OFF  
ON  
OFF  
SPI  
OFF  
SPI configuration OFF  
SPI  
configuration  
Normal  
SPI configuration  
SPI configuration SPI configuration  
configuration  
Low-power  
VDDOFF  
OFF  
OFF  
OFF  
OFF + wake-up enable/disable SPI configuration OFF + wake-up enable/disable  
OFF + wake-up enable/disable SPI configuration OFF + wake-up enable/disable  
Low-power  
VDDON  
OFF  
safe  
case A:  
ON  
SAFE_B  
output low:  
A: Keep SPI  
configuration,B: OFF  
OFF  
OFF + wake-up enable  
SPI configuration OFF + wake-up en  
SPI configuration SPI configuration  
SAFE_Bcase safe  
case B:  
A
OFF  
SPI  
configuration  
SPI  
configuration  
FLASH  
ON  
OFF  
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WDI resistor mode A  
VDD (High)  
RESET_B  
VDD (High)  
RESET_B  
SAFE_B  
SAFE_B  
OFF State  
ON State  
Delay time to enter in SAFE mode  
with consumption reduction and  
evaluate resistor at WDI pin  
WDI resistor mode B(1,2,3)  
VDD  
RESET_B  
SAFE_B (Low)  
CANx Bus  
(mode 1 and 3  
CAN bus idle time(8s)  
LIN bus idle time (8s)  
LINx Bus  
(mode 1 and 3)  
SG0  
(mode 2 and 3)  
Figure 18. SAFE mode A and B (1, 2, 3)  
4.2.6.3  
SAFE_B pin functions: SAFE_B  
This pin is an output which is asserted low in case a fault event occurs. The objective is to drive electrical safe circuitry outside the MCU  
and the SBC. This safe circuitry activates the default function of the ECU, independent of the MCU and SBC.  
Flexibility is provided to the user to select SAFE output operation via a resistor at the WDI pin. The SAFE output is an open drain structure.  
4.2.6.4  
SAFE_B pin functions: WDI  
This pin is an input used to set the device in Debug mode. When the device is powered up with a voltage at the WDI pin > 10 V, the device  
enters into Debug mode. In this mode, only a single WD refresh command (SPI 0x47000000) is necessary to put the device in Normal  
Mode. This allows for easy debugging of the software routine controlling the device.  
In addition, a resistor can be connected from the WDI pin to GND to select Fail-safe mode operation.  
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4.2.7  
Watchdog functional block  
4.2.7.1  
In normal request mode  
In Normal Request mode, the device expects to receive a watchdog configuration before the end of the normal request timeout period.  
This period is reset to a long (256 ms) after power-on and when BATFAIL is set. In Normal Request mode the watchdog operation is  
“timeout” only and can be triggered/served any time within the period.  
4.2.7.2  
Watchdog type selection  
Two different watchdog modes are implemented: Window or Advance. The selection of “Window” or “Advance” is done in INIT mode, after  
device power up when the Batfail flag is set. Configuration is done via the SPI. Then the watchdog mode selection content is locked and  
can be changed only via a secured SPI procedure.  
4.2.7.3  
Window watchdog operation  
The window watchdog is available in Normal mode only. The watchdog period selection can be kept (SPI is selectable in INIT Mode),  
while the device enters into Low-power Stop mode. The watchdog period is reset to the default long period after BATFAIL.  
The period and the refresh of watchdog are done by the SPI. A refresh must be done in the open window of the period, which starts at  
50% of the selected period and ends at the end of the period. If the watchdog is triggered before 50%, or not triggered before end of period,  
a reset has occurred. The device enters into Reset mode.  
4.2.7.4  
Watchdog in debug mode  
When the device is in Debug mode (entered after a POR when the WDI is > 10.0 V), the watchdog continues to operate, but does not  
affect the device operation by asserting a reset. A single WD refresh command (SPI 0x47000000) is necessary to put the device in Normal  
Mode. For the user, operation appears without the watchdog once Normal Mode is entered. When Debug is left by software (SPI mode  
reg.), the watchdog period starts at the end of the SPI command. When Debug mode is left by hardware, when the voltage on the WDI  
drops below 8.9 V, the device enters into an INIT Reset mode. The WDI pin is discussed in the SAFE_B functional block section.  
4.2.7.5  
Watchdog in flash mode  
During Flash mode operation, the watchdog can be selected to a long timeout period. Watchdog is timeout only and an INT pulse can be  
generated at 50% of the time window.  
4.2.7.6  
Advance watchdog operation  
When the Advance watchdog is selected (at INIT mode), the refresh of the watchdog must be done using a random number and with 1,  
2, or 4 SPI commands. The software must read a random byte from the SBC, then it must return the random byte inverted to clear the  
watchdog. The random byte write can be done in 1, 2, or 4 different SPI commands.  
If 1 command is selected, all 8 bits are written at once.  
If 2 commands are selected, first write command must include 4 of the 8 bits of the inverted random byte. The second command must  
include the next 4 bits. This completes the watchdog refresh.  
If 4 commands are selected, the first write command must include 2 of the 8 bits of the inverted random byte. The second command must  
include the next 2 bits, the 3rd command the next 2, and the last command, the last 2. This completes the watchdog refresh.  
When multiple writes are used, the most significant bits are sent first. The latest SPI command needs to be done inside the open window  
time frame.  
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4.2.7.7  
Detail SPI operation and SPI commands for all watchdog types  
In INIT mode, the W/D type is selected using register Init W/D, bits 1, 2, and 3. The W/D period is selected via TIM_A register. The W/D  
period selection can also be done in Normal mode or in Normal Request mode.  
Transition from INIT mode to Normal mode, or from Normal Request mode to Normal mode is done via a single W/D refresh command  
(SPI 0x47000000).  
While in Normal mode, the W/D refresh command depends upon the W/D type selected in INIT mode. These are detailed in the following  
paragraph:  
Simple W/D: refresh commands is 0x47000000. It can be sent any time within the W/D period if the timeout W/D operation is selected  
(INIT-W/D register, bit 1 WD N/Win = 0). It must be sent in the open window (second half of the period) if the Window Watchdog operation  
was selected (INIT-W/D register, bit 1 WD N/Win = 1).  
4.2.7.8  
Advance watchdog  
The first time device enters into Normal mode (entry on Normal mode using the 0x47000000 command), the RND code must be read  
using SPI command 0x0B000000. Device returns on the MISO fourth byte of the RND code. The full 32 bit MISO response is  
0xXX0000RD.  
Advance Watchdog, refresh by 1 SPI command:  
The refresh command is 0x4B0000RD. During each refresh command device returns a new Random Code on MISO. This new random  
code must be inverted and sent along with the next refresh command, and so on.  
It must be done in the open window if the Window operation was selected.  
Advance Watchdog, refresh by 2 SPI commands:  
The refresh command is split in 2 SPI commands.  
The first partial refresh command is 0x4B0000w1, and the second is 0x4B0000w2. Byte w1 contains the first 4 inverted bits of the RD byte  
plus the last 4 bits equal to zero. Byte w2 contains 4 bits equal to zero plus the last 4 inverted bits of the RD byte.  
During this second refresh command, the device returns a new Random Code on MISO. This new random code must be inverted and  
send along with the next 2 refresh commands and so on.  
The second command must be done in the open window if the Window operation was selected.  
Advance Watchdog, refresh by 4 SPI commands:  
The refresh command is split in 4 SPI commands.  
The first partial refresh command is 0x4B0000w1, the second is 0x4B0000w2, the third is 0x4B0000w3 and the last is 0x5Aw4.  
Byte w1 contains the first 2 inverted bits of the RD byte plus the last 6 bits equal to zero.  
Byte w2 contains 2 bits equal to zero plus the next 2 inverted bits of the RD byte plus 4 bits equal to zero.  
Byte w3 contains 4 bits equal to zero plus the next 2 inverted bits of the RD byte plus 2 bits equal to zero.  
Byte w4 contains 6 bits equal to zero plus the next 2 inverted bits of the RD byte.  
During this fourth refresh command, the device returns on MISO a new Random Code. This new random code must be inverted and sent  
along with the next 4 refresh commands. The fourth command must be done in the open window, if the Window operation was selected.  
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4.3  
Operational modes  
4.3.1  
Introduction  
The device has several operation modes. The transitions and conditions to enter or leave each mode are described in Figure 19.  
Debug  
mode  
detection  
VBATP rise &  
DD > VDD_UVTH  
INIT Reset  
V
VBATP fail  
Power Down  
start tIR  
(tIR = 1.0 ms)  
VBATP fail  
tINIT expired  
Or VDD < VDD_UVTH  
W/D refresh  
by SPI  
tIR expired &  
VDD > VDD_UVTH  
FLASH  
start tWDF  
(max 32768 ms)  
INIT  
Start tINIT  
(tINIT = 256 ms)  
External  
RESETb  
SPI secured (1)  
or tWDF expired  
or VDD < VDD_UVTH  
SPI secured (1)  
SPI write  
(0x47000000 )  
(W/D refresh)  
SPI secured (1)  
VDD < VDD_UVTH  
or tWD expired  
RESET  
start tR  
or W/D failure (3)  
or SPI secured (1)  
Normal  
Start tWDN  
W/D refresh  
by SPI  
(1.0 ms or config)  
(tWDN = config)  
Wake-up  
t
R expired  
SPI write  
(0x47000000 )  
(W/D refresh)  
& VDD > VDD_UVTH  
t
NR expired  
SPI  
NORMAL  
REQUEST  
start tNR  
LOW POWER  
VDD ON  
Wake-up  
(256 ms)  
SG scan  
Start tWDL (2)  
tOC expired  
or Wake-up  
IDD < IOC  
(2.0 mA)  
OC ended  
if enable  
W/D refresh  
by SPI  
t
Wake-up  
IDD > IOC  
(2.0 mA)  
LP VDDON  
VDD < VDD_UVTHLP  
IDD > 2.0 mA  
SG scan  
start tOC time  
tWDL expired or VDD < VDD_UVTHLP  
SPI  
SPI  
LOW POWER  
VDD OFF  
SG scan  
FAIL SAFE  
DETECTED  
(1) Refer to “SPI secured” description.  
(2) If enabled by SPI prior to entering LP VDD ON mode.  
(3) W/D refresh in closed window or enhanced W/D refresh failure.  
Figure 19. State diagram  
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4.3.1.1  
INIT reset  
This mode is automatically entered after device “power ON”. In this mode, the RST_B pin is asserted low, for a duration of typically 1.0 ms.  
Control bits and flags are “set” to their default reset condition. The BATFAIL is set to indicate the device is coming from an unpowered  
condition, and all previous device configurations are lost and “reset” is the default value. The duration of the INIT reset is typically 1.0 ms.  
INIT reset mode is also entered from INIT mode, if the expected SPI command does not occur in due time (ref. INIT mode)  
4.3.1.1.1  
INIT  
This mode is automatically entered from “INIT reset” mode. In this mode, the device must be configured via the SPI within a time of 256 ms  
max. One SPI word to configure the INIT registers (three registers called Watchdog, REG, and MISC) must be configured during INIT  
mode.  
Once the INIT registers configuration is done, a SPI Watchdog Refresh command must be sent in order to set the device into Normal  
mode. If the SPI W/D refresh does not occur within the 256 ms period, the device returns into INIT reset mode for a typical 1.0 ms, and  
then reenter into INIT mode.  
Register read operation is allowed in INIT mode, to collect device status or to read back the INIT register configuration. When INIT mode  
is left by a SPI Watchdog refresh command, it is possible to reenter the INIT mode only by a secured SPI command.  
4.3.1.1.2  
Reset  
In this mode, the RST_B pin is asserted low. Some bits and flags are reset. Reset mode is entered from Normal mode, from Normal  
Request mode, from LP VDD ON mode and from Flash mode, when the watchdog is not triggered, or a VDD low condition is detected.  
The duration of reset is typically 1.0 ms by default. The user can define a longer Reset pulse activation, only when the Reset mode is  
entered, following a VDD low condition. Reset pulse is always 1.0 ms, in case the Reset mode is entered due to a wrong watchdog refresh  
command.  
4.3.1.2  
Normal request  
This mode is automatically entered from Reset mode, or after a wake-up from Low-power VDD ON mode. A watchdog refresh SPI  
command is necessary to allow a transition to Normal mode. The duration of the Normal request mode is 256 ms maximum duration when  
Normal Request mode is entered after Reset or when entered from the LP VDD ON mode. If the watchdog refresh SPI command does  
not occur within the 256 ms, the device enters into Reset mode for a duration of typically 1.0 ms.  
4.3.1.2.1  
Normal  
In this mode, all device functions are available. This mode is entered by a SPI watchdog refresh command from Normal Request mode,  
or from INIT mode. During Normal mode, the device watchdog function is operating, and a periodic watchdog refresh must occur. In case  
of an incorrect or missing watchdog refresh command, the device enters into Reset mode.  
From Normal mode, the device can be set by a SPI command into Low-power modes (Low-power VDD ON or Low-power VDD OFF).  
Dedicated secured SPI commands can be used to enter from Normal mode in Reset mode, INIT mode, or Flash mode.  
4.3.1.2.2  
Debug  
Debug is a special operation condition of the device which allows the system easy software and hardware debugging. The debug  
operation is detected after power up if the WDI pin is set above 10 V.  
When debug is detected, all the software watchdog operations are disabled: 256 ms of INIT mode, watchdog refresh of Normal mode and  
Flash mode of 256 ms, or a user defined timeout of Normal request mode, are not operating and does not lead to a transition into INIT  
reset or Reset mode.  
4.3.1.3  
Flash  
In this mode, the software watchdog period is extended up to typically 32 seconds. This allows the MCU flash memory to be reloaded,  
while the software overhead refreshes the watchdog is limited. The Flash mode is left by the SPI command and the device enters into  
Reset mode. In case of an incorrect or missing watchdog refresh, the command device enters into Reset mode.  
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4.3.1.3.1  
Low-power modes  
The device has two main Low-power modes: Low-power mode with VDD OFF, and Low-power mode with VDD ON.  
4.3.1.3.2  
Low-power - V off  
DD  
In this mode, VDD is turned OFF and the MCU connected to VDD is unsupplied. This mode is entered by the SPI. In order to prevent  
accidental VDD turn off, a VDDoff en control bit is used. This bit must be set to "1" for Low-power - VDD OFF mode to be activated.It can  
also be entered by automatic transition due to fail-safe management. The 5 V-CAN and VAUX regulators are also turned off.  
When the device is in Low-power VDD OFF mode, it monitors external events to wake-up and leave the LP mode. The wake-up events  
can occur from:  
• CAN bus  
• LIN bus  
• Expiration of an internal timer  
• SG input  
When a wake-up event is detected, the device enters into Reset mode and then into Normal Request mode. The wake-up source is  
reported into the device SPI registers. In summary, a wake-up event from LP VDD OFF, leads to a VDD regulator turn ON, and an MCU  
operation restart.  
4.3.1.3.3  
Low-power - V on  
DD  
In this mode, the voltage at the VDD pin remains at 5.0 V (or 3.3 V, depending upon device part number). The objective is to maintain the  
MCU in a reduced power consumption mode. In this mode, the DC output current is expected to be limited to a few 100 μA or some mA,  
as the ECU is in reduced power operation mode. The 5 V-CAN and VAUX regulators are turned OFF.  
However, in Low-power VDD ON mode, the device is able to deliver several micro amps of current on VDD (up to typ. 2.0 mA). The current  
delivery can be time limited, by a selectable internal timer. Timer duration is up to 32 ms, and is triggered when the output current exceeds  
the output current threshold, typically 2.0 mA. This allows, for instance, a periodic activation of the MCU while the device remains in LP  
VDD ON mode. If the duration exceeds the selected time (ex 32 ms), the device detects a wake-up.  
The same wake-up event as in LP VDD OFF mode (CAN, SGx, timer, cyclic sense) are available in LP VDD ON mode. In addition, two  
additional wake-up conditions are available.  
• By a dedicated SPI command (hex 0x49000010).  
• Output current from VDD exceeding typically a 2.0 mA threshold, the device wakes up, provided additional conditions are met (timing  
detection...).  
• If VDD maximum load is exceeded (>80 ma), VDD starts to fall. When VDD falls below approximately 1.0 V, the device then wakes up  
and issue a reset.  
Wake-up events are reported to the MCU via a low level pulse at the INT pin. The MCU detects the INT pulse and resume operation.  
4.3.1.3.4  
Watchdog function in LP V on mode  
DD  
It is possible to enable the watchdog function in low-power VDD ON mode, for timeout functionality.  
Refresh of the watchdog is done either by:  
• a dedicated SPI command (different from any other SPI command, or simple CS activation, which would wake-up)  
• or by a temporary (less than 32 ms max) VDD overcurrent wake-up (IDD > 2.0 mA typ).  
As long as the watchdog refresh occurs, the device remains in LP VDD ON mode.  
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4.3.1.3.5  
Cyclic sense operation  
This function can be used in both Low-power modes (LP VDD OFF and LP VDD ON). Cyclic sense is a specific detection of an event on  
an SGx, during the cyclic activation of the SGx input. Cyclic sense principle (synchronous cyclic sense):  
A dedicated timer allows to select a cyclic sense period from 3.0 to 512 ms (selection in timer B). At the end of the period, the SGx is  
activated for a duration of tSCAN. During the TSCAN duration, the SGx is monitored. If it is it the expected level, the device detects a wake-  
up. Cyclic sense can operate for both Low-power modes: Low-power VDD ON and Low-power VDD OFF.  
Cyclic sense period is selected by the SPI configuration prior to entering Low-power mode. The expected level on SGx is selected at the  
time the device is set into Low-power mode. This means prior to entering Low-power mode, SGx must be activated, so the level of SGx  
can be sampled. During device Low-power mode, if the opposite level on SGx is reached during the SGx activation mode, the device  
wakes up.  
During Cyclic Sense active time (tSCAN), the level of SGx is the same as the one before entering Low-power mode. So full flexibility is  
offered, as the SGx high-side or low-side switch can be activated by the SPI in Normal mode. The level of SGx is sensed during the SGx  
active time, and is deglitched for a duration of typically 30 μs. This means SGx should be in the expected state for a duration longer than  
the deglitcher time.  
4.3.1.3.6  
CAN functional block  
The 33909 has an enhanced High Speed CAN physical interface. A single CAN5V pin is used for a capacitor for the internal 5.0 V regulator  
to power the CAN interface. There is also a single dedicated Ground for the CAN bus (CANGND).  
The CAN5V regulator supplies a maximum of 200 mA, while the CAN physical layer is designed to current limit to less than 100 mA in  
case of a short on the bus. If the user does not use the physical layer, the user may use the CAN5V supply as another supply rail. The  
CAN5V regulator turns OFF in LP modes.  
VBATP  
Pattern  
Detection  
Wake-up  
Receiver  
SPI & State machine  
CAN5V  
Driver  
QH  
RIN  
2.5V  
CANH  
CANL  
Differential  
Receiver  
RXD  
TXD  
RIN  
5VCAN  
Driver  
QL  
SPI & State machine  
SPI & State machine  
Thermal  
Failure Detection  
& Management  
Figure 20. CAN interface block diagram  
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4.3.1.3.7  
TX/RX mode  
In TX/RX mode, both the CAN driver and the receiver are ON. In this mode, the CAN lines are controlled by the TXD pin level, and the  
CAN bus state is reported on the RXD pin.  
The CAN5V regulator must be ON. It supplies the CAN driver and receiver.  
TLRD  
TXD  
0.3 CAN5V  
0. 7 CAN5V  
TLDR  
0.7 CAN5V  
RXD  
0.3 CAN5V  
Figure 21. CAN propagation delays TXD to CAN and CAN to RXD  
TTRD  
TXD  
VDIFF  
RXD  
0.7 CAN5V  
TTDR  
0.3 CAN5V  
0.9V  
TRRD  
0.5V  
TRDR  
0.7 CAN5V  
0.3 CAN5V  
Figure 22. CAN propagation delays TXD to CAN and CAN to RXD  
VBAT  
VBATP  
VDD  
100nF  
2.2µF  
CANH  
CANL  
Signal  
generator  
RBUS  
60O  
CBUS  
100pF  
TXD  
RXD  
All pins are not  
shown  
15pF  
GND  
Figure 23. CAN test setup  
4.3.1.3.8  
Sleep mode  
Sleep mode is a reduced current consumption mode. CANH and CANL lines are terminated to GND via the RIN resistor (typ 25 kΩ). In  
order to monitor bus activities, the CAN wake-up receiver is ON.  
Wake-up events occurring on the CAN bus pin are reporting by dedicated flags in SPI, and results in a device mode transition out of Low-  
power mode.  
4.3.1.3.9  
Listen only mode  
This mode is used to disable the CAN driver, but leave the CAN receiver active. In this mode, the device is only able to report the CAN  
state on the RXD pin. The TXD pin has no effect on CAN bus lines. The CAN5V regulator must be ON.  
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4.3.1.3.10 CAN interface supply  
The supply voltage for the CAN driver is the CAN5V pin. The CAN interface also has a supply path from the battery line, through the  
VBATP pin. This path is used in CAN sleep mode to allow wake-up detection. During CAN communication (transmission and reception),  
the CAN interface current is sourced from the CAN5V pin. During CAN Low-power mode, the current is sourced from the VBATP pin.  
4.3.1.3.11 CAN driver operation in TX/RX mode  
The CAN drive can be enabled via SPI as soon as the device is in normal mode. When the CAN interface is in Normal mode, the driver  
has two states: recessive or dominant. The driver state is controlled by the TXD pin. The bus state is reported through the RXD pin.  
When TXD is high, the driver is set in the recessive state, and CANH and CANL lines are biased to the voltage set with CAN5V divided  
by 2, or approximately 2.5 V. When TXD is low, the bus is set into the dominant state, and CANL and CANH drivers are active. CANL is  
pulled low and CANH is pulled high.  
The RXD pin reports the bus state: CANH minus the CANL voltage is compared versus an internal threshold (a few hundred mV).  
If “CANH minus CANL” is below the threshold, the bus is recessive and RXD is set high.  
If “CANH minus CANL” is above the threshold, the bus is dominant and RXD is set low.  
Recessive State  
TXD  
Dominant State  
CANH-DOM  
CANL/CANH-  
CANH  
REC  
2.5 V  
CANL  
High ohmic termination  
CANL-DOM  
(50 kΩ) to GND  
RXD  
Receiver  
BUS Driver  
(bus dominant set by other IC)  
Go to sleep, Sleep  
or Stand-by Mode  
Normal or Listen Only Mode  
Normal or Listen Only Mode  
Figure 24. BUS signal in Tx/Rx and low-power mode_48LD  
4.3.1.3.12 Minimum baud rate  
The minimum baud is determined by the shortest TXD permanent dominant timing detection. The maximum number of consecutive  
dominant bits in a frame is twelve (six bits of active error flag and its echo error flag). The shortest TXD dominant detection time of 300 μs  
lead to a single bit time of: 300 μs/12 = 25 μs, so the minimum Baud rate is 1/25 μs = 40 kBaud.  
4.3.1.3.13 Termination  
The device supports differential termination resistors between CANH and CANL lines. Refer to device typical application.  
4.3.1.3.14 Low-power mode  
In Low-power mode, the CAN is internally supplied from the VBATP pin. In Low-power mode, the CANH and CANL drivers are disabled,  
and the receiver is also disabled. CANH and CANL have a typical 25 kΩ impedance to GND. The wake-up receiver can be activated if  
wake-up is enabled by the SPI command. When the device is set back into Normal mode, CANH and CANL are set back into the recessive  
level. This is illustrated in Figure 24.  
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4.3.1.3.15 Wake-up  
When the CAN interface is in Sleep mode with wake-up enabled, the CAN bus traffic is detected. The CAN bus wake-up is a pattern wake-  
up. The wake-up by the CAN is enabled or disabled via the SPI. There are two methods for wake-up, Three dominant pulses or a single  
dominant pulse described in the figures below. The default condition is for the three dominant pulses to cause a wake-up.  
CANH  
Dominant  
Pulse #1  
Dominant  
Pulse #4  
Dominant  
Pulse #2  
Dominant  
Pulse #3  
CAN Bus  
CANL  
Incoming CAN message  
Internal differential  
wake-up receiver signal  
min 650 ns  
Internal wake-up signal  
min 650 ns  
min 1.2 us  
max 1500 ns  
max 120 µs  
Figure 25. Three dominant pulses pattern wake-up  
CANH  
Dominant  
Pulse #1  
CAN Bus  
CANL  
Incoming CAN message  
Internal differential  
wake-up receiver signal  
Internal wake-up signal  
min 1.2 µs  
max 2.5 µs  
Figure 26. Single pulse pattern wake-up  
4.3.1.3.16 CAN wake-up report  
The CAN wake reporting is done via the device state machine.  
4.3.1.3.17 Pattern wake-up  
In order to wake-up the CAN interface, the wake-up receiver must receive a series of three consecutive valid dominant pulses, by default  
when the CANWU bit is low. CANWU bit can be set high by SPI and the wake-up occurs after a single pulse duration of 1.0 μs (typ).  
A valid dominant pulse is longer than 500 ns. The three pulses occur in a time frame of 120 μs, to be considered valid. When three pulses  
meet these conditions, the wake signal is detected. This is illustrated by Figure 25.  
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FUNCTIONAL DEVICE OPERATION  
Standard Termination  
CANH  
C4  
60  
CAN Bus  
CANL  
C5  
No Termination  
CANH  
CANL  
C4  
CAN Bus  
C5  
Figure 27. Typical application and bus termination options  
4.3.1.3.18 State transition  
CAN5V regulator OFF only in low-power, or disable by a SPI command. CAN5V can be enabled by SPI after power up and in the INIT  
state. This gains the reset, time to charge the external capacitor and have the CAN5V active in Debug and Flash modes. Refer to the  
Figure 19.  
4.3.1.3.19 CAN bus diagnostic  
The aim is to implement a diagnostic of bus short-circuit to GND, VBATP, and internal ECU 5.0 V. Several comparators are implemented  
on CANH and CANL lines. These comparators monitor the bus level in the recessive and dominant states. The information is then  
managed by a logic circuitry to properly determine the failure and report it. Table 8 indicates the state of the comparators in case of a bus  
failure, and depending upon the driver state.  
Table 8. CAN failure detection truth table  
Driver recessive state  
Driver dominant state  
Failure description  
Lg (threshold 1.75 V)  
Hg (threshold 1.75 V)  
Lg (threshold 1.75 V)  
Hg (threshold 1.75 V)  
No failure  
1
1
0
1
CANL to GND  
CANH to GND  
0
0
0
1
0
0
0
0
Lb (threshold VBATP-2.0 V)  
Hb (threshold VBATP-2.0 V)  
Lb (threshold VBATP-2.0 V)  
Hb (threshold VBATP-2.0 V)  
No failure  
0
1
1
0
1
1
0
1
0
0
1
1
CANL to VBATP  
CANH to VBATP  
4.3.1.3.20 Detection principle  
In the recessive state, if one of the two bus lines are shorted to GND or VBATP, the voltage at the other line follows the shorted line, due  
to the bus termination resistance. For example: if CANL is shorted to GND, the CANL voltage is zero, the CANH voltage measured by the  
Hg comparator is also close to zero.  
In the recessive state, the failure detection to GND or VBATP is possible. However, it is not possible with the above implementation to  
distinguish which of the CANL or CANH lines are shorted to GND or VBATP. A complete diagnostic is possible once the driver is turned  
on, and in the dominant state.  
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Vr5  
H5  
Hb  
VBAT (12-14V)  
VDD  
VRVB (VBAT-2.0V)  
Vrvb  
VDD (5.0V)  
Vrg  
H5  
H5  
TX  
CANH  
CANL  
VR5 (VDD-0.43V)  
Logic  
Diag  
CANH dominant level (3.6V)  
Recessive level (2.5V)  
Vrg  
H5  
H5  
VRG (1.75V)  
Vrvb  
CANL dominant level (1.4V)  
GND (0.0V)  
Vr5  
Figure 28. CAN bus simplified structure truth table for failure detection  
4.3.1.3.21 Number of samples for proper failure detection  
The failure detector requires at least one cycle of the recessive and dominant states to properly recognize the bus failure. The error is fully  
detected after five cycles of the recessive-dominant states. As long as the failure detection circuitry has not detected the same error for  
five recessive-dominant cycles, the error is not reported.  
4.3.1.3.22 Bus clamping detection  
If the bus is detected to be in dominant for a time longer than (TDOM), the bus failure flag is set and the error is reported in the SPI.  
Such condition could occur in case the CANH line is shorted to a high voltage. In this case, current flows from the high voltage short-circuit  
through the bus termination resistors (60 Ω), and the device CANH and CANL input resistors, which are terminated to internal 2.5 V  
biasing or to GND (sleep mode).  
Depending upon the high voltage short-circuit, the number of nodes, RIN actual resistor, and node state (sleep or active), the voltage  
across the bus termination can be sufficient to create a positive dominant voltage between CANH and CANL, and RXD pin is low. This  
would prevent start of any CAN communication, and thus a proper failure identification (requires five pulses on TXD). The bus dominant  
clamp circuit helps to determine such failure situation.  
4.3.1.3.23 RX permanent recessive failure  
The aim of this detection is to diagnose an external hardware failure at the RX output pin and ensure a permanent failure at RX does not  
disturb the network communication. If RX is shorted to a logic high signal, the CAN protocol module within the MCU does not recognize  
any incoming message. In addition, it is not be able to easily distinguish the bus idle state and can start communication at any time. In  
order to prevent this, an RX failure detection is necessary.  
Figure 29. RX path simplified schematic, RX short to VDD detection  
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4.3.1.4  
Implementation for detection  
The proposed implementation is to sense the RXD output voltage at each low to high transition of the differential receiver. Excluding the  
internal propagation delay, the RXD output is low when the differential receiver is low. In case of an external short to VDD at the RXD  
output, RXD is tied to a high level and can be detected at the next low to high transition of the differential receiver.  
As soon as the RXD permanent recessive is detected, the RXD driver is deactivated. Once the error is detected, the flag is latched and  
the driver is disabled.  
4.3.1.4.1  
Recovery condition  
The internal recovery is done by sampling a correct low level at TXD, as shown in Figure 30.  
CANL & H  
Diff output  
Sampling  
Sampling  
RXD output  
RX flag  
Rx short to VDD  
RX flag latched  
RX no longer shorted to VDD  
The RX flag is not the RXPR bit in the LPC register, and neither is the CANF in the INTR register.  
Figure 30. RX path simplified schematic, RX short to VDD detection  
4.3.1.4.2  
Important information for bus driver reactivation  
The driver stays disabled until the failure is cleared (RX is no longer permanent recessive). One transition on the CAN bus (internal  
differential receiver transition) and the bus driver is activated by entering into Normal mode.  
4.3.1.4.3  
TXD permanent dominant  
Principle  
If the TXD is set to a permanent low level, the CAN bus is set into dominant level and no communication is possible. The device has a  
TXD permanent timeout detector. After the timeout, the bus driver is disabled and the bus is released into a recessive state. The TXD  
permanent flag is set.  
Recovery  
The TXD permanent dominant is also used and activated, in case of a TXD short to RXD. The recovery condition for a TXD permanent  
dominant (recovery means the re-activation of the CAN drivers) is done by entering into a Normal mode controlled by the MCU, or when  
TXD is recessive while RXD changes from recessive to dominant.  
4.3.1.5  
TXD to RXD short-circuit  
Principle  
4.3.1.5.1  
In case TXD is shorted to RXD, during incoming dominant information, RXD is set low. Consequently, the TXD pin is low and drives CANH  
and CANL into a dominant state. Thus the bus is stuck in dominant. No further communication is possible.  
4.3.1.5.2  
Detection and recovery  
The TXD permanent dominant timeout activates and releases the CANL and CANH drivers. However, at the next incoming dominant bit,  
the bus is stuck in dominant again. The recovery condition is same as the TXD dominant failure.  
4.3.1.5.3  
CAN functional pin: TXD  
CAN bus transmit data input. Internal pull-up to VDD  
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FUNCTIONAL DEVICE OPERATION  
4.3.1.5.4  
CAN functional pin: RXD  
CAN bus receive data output.  
4.3.1.5.5  
CAN functional pin: CANH  
CAN high output.  
4.3.1.5.6  
CAN functional pin: CANL  
CAN low output.  
4.3.1.6  
LIN interface functional block  
The 33909 has 4 LIN interfaces which fulfill LIN protocol specification 2.1 and SAEJ2602-2. The LIN pin represents the single-wire bus  
transmitter and receiver, and is suited for automotive bus systems. The LIN interface is only active during Normal mode. The CAN5V  
regulator serves as the internal supply for the LIN and must be enabled for LIN functionality.  
The LIN driver is a low-side MOSFET with internal overcurrent thermal shutdown. An internal pull-up resistor with a serial diode structure  
is integrated, so no external pull-up components are required for the application in a slave node. An additional pull-up resistor of 1.0 kΩ  
must be added when the device is used in the master node. The LIN pin exhibits no reverse current from the LIN bus line to VBATP, even  
in the event of GND shift or VBATP disconnection. The transmitter has a 20 kbps baud rate (normal mode) or 10 kbps baud rate (slow  
mode) which is configurable via the SPI.  
The receiver thresholds are ratiometric with the device supply pin. If the LIN voltage goes below the LIN undervoltage threshold (VUVL  
,
VUVH), the bus enters in recessive state, even if communication is sent on TXD. In case of LIN Thermal Shutdown, the transceiver and  
receiver are disabled. When the temperature is below the TLINSD, the TSD flag must be cleared and the LIN is able to continue  
communication. The LIN driver remains OFF until the TSD flag is cleared.  
4.3.1.6.1  
Data input pin (TXD)  
The TXD input pin is the MCU interface to control the state of the LIN output. When TXD is LOW (dominant), LIN output is LOW; when  
TXD is HIGH (recessive), the LIN output transistor is turned OFF. The threshold is 3.3 V and 5.0 V compatible. This pin has an internal  
pull-up current source to force the recessive state, in case the input pin is left floating.  
4.3.1.6.2  
Data output pin (RXD)  
The RXD output pin is the MCU interface, which reports the state of the LIN bus voltage. In Normal or Slow mode, LIN HIGH (recessive)  
is reported by a high voltage on RXD; LIN LOW (dominant) is reported by a low voltage on RXD. In Fast mode, the RXD output signal is  
inverted compare to the LIN: a high level on the LIN reports a low level on RXD, and a low level on the LIN reports a high level on RXD.  
The RXD output structure is a buffer tristate output.  
It is the receiver output of the LIN interface. The low level is fixed. The high level is dependant on the VDD voltage. If VDD is set at 3.3 V,  
RXD VOH is 3.3 V. If VDD is set at 5.0 V, RXD VOH is 5.0 V. In the sleep mode, RXD is high-impedance. Due to internal biasing, the RXD  
pin cannot be pulled up to another supply besides VDD. When a wake-up event is recognized from the LIN bus pin, RXD is pulled LOW  
to report the wake-up event. For this, an external pull-up resistor connected on RXD pin is needed.  
4.3.1.6.3  
Normal mode  
In the Normal mode, the LIN bus can transmit and receive information. The default condition is the 20 kbps mode and has slew rate and  
timing compatible with Normal Baud Rate and LIN protocol specification 2.1. The 10 kbps selection is SPI configurable and has slew rate  
and timing compatible with Low Baud Rate. From Normal mode the device can enter in Fast Baud Rate (Toggle function).  
4.3.1.6.4  
Fast mode  
In the Fast mode, the slew rate is around 10 times faster than the Normal mode. This allows very fast data transmission (>100 kbps), for  
instance, for electronic control unit (ECU) tests and microcontroller program downloads. The bus pull-up resistor might be reduced to  
ensure a correct RC time constant in line with the high baud rate used. Fast mode is entered via the SPI.  
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4.3.1.6.5  
Sleep mode  
In the Sleep mode, the transmission path is disabled and the device is in low-power mode. Supply current from VBATP is very low. Wake-  
up can occur from LIN bus activity. After a wake-up event, the device enters in Awake Mode. In the Sleep mode, the internal 725 kΩ pull-  
up resistor is connected and the 30 kΩ disconnected.  
4.3.1.6.6  
Remote wake from LIN bus (awake transitional mode)  
The LIN bus wake-up is recognized by a recessive-to-dominant transition, followed by a dominant level with a duration greater than 70 μs,  
followed by a dominant-to-recessive transition. This is illustrated in Figure 7 and Figure 8. Once the wake-up is detected, the device enters  
to the Awake transitional mode with RXD pulled LOW.  
4.3.2  
Fail-safe features  
Table 9 describes the protections.  
Table 9. Fail-safe protections  
Block  
Fault  
Function mode  
Condition  
Fallout  
Recovery  
undervoltage  
LIN voltage < 5.8 V (Typical)  
LIN transmitter in recessive state  
Condition gone  
Normal  
TXD pin  
permanent  
Dominant  
TXD pin low for more then 1.0 s (Typ)  
Temperature > 160 °C (Typ)  
LIN transmitter in recessive state  
Condition gone  
Condition gone  
LIN  
LIN transmitter in recessive state  
High-side turned off.  
LIN thermal  
shutdown  
Normal and  
Awake modes  
4.3.2.0.1  
LIN functional pin: LINx  
LIN bus.  
4.3.2.0.2  
LIN functional pin: TXD-Lx  
LIN bus transmit data input. Includes an internal pull-up resistor to VDD  
.
4.3.2.0.3  
LIN functional pin: RXD-Lx  
LIN bus receive data output  
4.3.2.1  
VPRE regulator functional block  
The 33909 has a VPRE pre-regulator designed to run as a non-inverting Buck - Boost supply for the VDD and VAUX power supplies. This  
regulator provides efficient DC-DC conversion as well as boost operation at low input voltage (low battery). The output voltage level is  
6.5 V.  
The converter has both a high and low-side FET and requires a single inductor for operation. The high-side FET is integrated into the  
33909. The low-side Boost FET is external. The converter uses external diodes instead of synchronous switches to reduce the number  
of pins.  
The 33909 has a Low-power mode to reduce quiescent current when full power is not needed by the micro. In Low-power mode, the buck  
boost converter is placed in a zero quiescent current mode and a small internal regulator is employed to power the VPRE node.  
The VPRE supply contains a thermal limit circuit, which is used to supply a thermal warning as well as provide a thermal limit which turns  
OFF the IC. A flag exists for both of these functions. When thermal limit is reached the VPRE supply turns off. The thermal shutdown limit  
was designed to be above the other IC thermal thresholds. The user should take care when the IC thermal limits are reached in order to  
maintain Voltage regulator operation of VPRE and VDD  
.
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FUNCTIONAL DEVICE OPERATION  
BOOTSTRAP  
VBATP  
VSW  
Control  
VPREGATE  
VBATP  
VPRE  
COMP1 COMP2  
Figure 31. VPRE block diagram  
4.3.2.1.1  
VPRE pin functions:  
There are four pins associated with the VPRE regulator  
• VPREGATE - Gate drive for low-side (Boost) FET.  
• VSW - Switching node of high-side (Buck) FET.  
• BOOT - Supply for high-side (internal) pre-driver.  
• VPRE - Pre-regulator output (6.5 V).  
4.3.2.1.2  
VPRE pin functions: BOOT  
An external bootstrap 0.1 μF capacitor connected between VSW and the BOOT pin is used to generate a high voltage supply for the high-  
side driver circuit of the buck controller. The capacitor is pre-charged to approximately 10 V, while the internal FET is off. On switching,  
the VSW pin is pulled up to VBATP, causing the BOOT pin to rise to approximately VBATP + 10 V.  
4.3.2.1.3  
VPRE pin functions: VPREGATE  
This is an output for driving an external FET for boost mode operation. Due to the fact the gate drive supply voltage is VPRE, the external  
power MOSFET should be a logic level device. It also has to have a low RDS(ON) for acceptable efficiency. During Buck mode, this gate  
output is held low.  
To use the 33909 in Buck Only mode, the VPREGATE pin is held at Ground and an internal comparator alerts the IC it is in Buck Only  
mode.  
4.3.2.1.4  
VPRE pin functions: VPRE  
The output of the switching regulator is brought into the chip at the VPRE pin. This voltage is required for both the switching regulator  
control and as the supply voltage for all the linear regulators. The VPRE pin functions as a supply rail for some IC functions, including the  
rail for the SG input current sources. The VPRE supply also supplies the CAN5V internal rail.  
4.3.2.1.5  
VPRE pin functions: VSW  
The internal switching transistor is an N-channel power MOSFET. The RDS(ON) of this internal power FET is approximately 0.25 Ω at  
+125 ºC. The nominal instantaneous current limits well below the saturation current of the MOSFET and external surface mounted  
inductor, to supply the current for the linear regulators connected to the VPRE pin. The input to the drain of the internal n-channel MOSFET  
must be protected by an external series blocking diode, for reverse battery protection.  
4.3.2.1.6  
VPRE external components  
The VPRE power supply requires external components for the Buck and Boost mode architecture. The VPRE supply uses an external  
inductor, MOSFET and two diodes. Buck-Boost usage case  
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FUNCTIONAL DEVICE OPERATION  
Usage of the Buck-Boost feature is the most widely used case. In this case, all of the external components are populated and VPRE  
produces approximately 6.5 V through the full battery operation range. This use case allows the 33909 to remain fully functional during  
the battery crank profile down to 2.5 V.  
The Boost circuitry remains OFF when the VBATP pin is above the VBATPTHD threshold and the Buck circuitry operates as required in  
Boost mode when the VBATP pin is below VBATPTHU as seen in Figure 32. In the range between VBATPTHD and VBATPTHU, the IC  
operates as needed to supply VPRE at 6.5 V.  
7.5v  
VBATP  
VBATPTHD  
6.5v  
VBATPTHU  
VBATPBOOSTNOT  
VBATPBUCKNOT  
Figure 32. VPRE buck-boost voltage levels  
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FUNCTIONAL DEVICE OPERATION  
4.3.2.2  
Buck usage case  
A second option for the user is to use only the Buck circuitry and not the Boost circuitry (saving the added cost if Boost is not required).  
When using the Buck only mode, the user does not populate the low-side FET (VPREGATE) and the associated diode. In this case, the  
user grounds the VPREGATE and the 33909 detects this during startup. The VBATP pin voltage range in this mode is ~7.0 V to 35 V.  
As the battery voltage decreases, the high-side switch turns ON to 100% duty cycle and operate in a “pass thru” mode. The following  
figures illustrate some of the device mode transitions.  
Power up to  
Normal Mode to Sleep  
Mode (VDD Off)  
Normal Mode to STOP  
Normal Mode  
A
B
B
C
B
D
Mode (VDD On)  
Vpre_UV  
VBATP  
Vpre  
VDD_UV  
VDD  
CAN5V  
VAUX  
INT_B  
RESET_B  
SPI  
1
2
3
4
5
3
4
6
Modes  
Notes: SPI communications.  
1) INIT command  
2) Watchdog refresh (INIT to Normal)  
3) Normal SPI commands as needed  
4) Low power configuration setup  
5) Sleep mode command  
6) Stop mode command  
Figure 33. Power up to normal and to low-power modes  
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FUNCTIONAL DEVICE OPERATION  
Wake up from Low Power  
VDD off mode  
Wake up from Low Power  
B
C
B
D
VDD on mode  
VBATP  
Vpre  
VBATP  
Vpre  
VDD  
VDD  
CAN5V  
CAN5V  
VAUX  
INT_B  
VAUX  
INT_B  
RESET_B  
SPI  
RESET_B  
SPI  
7
8
7
8
Modes  
CAN BUS  
LIN BUS  
CAN BUS  
LIN BUS  
CAN wake  
up pattern  
CAN wake  
up pattern  
LIN Wake  
up filter  
LIN Wake  
up filter  
SGx  
SGx  
FWU  
Timer  
FWU  
Timer  
Start  
Stop  
Start  
Stop  
FWU Timer (SPI selectable)  
FWU Timer (SPI selectable)  
Wake up detected  
IDD  
SPI  
IDD 3mA typ  
IDD deglitcher or timer  
9
Notes:  
7) SPI communications as needed  
8) Watchdog refresh  
Wake up detected  
9) SPI communication (except watchdog if configured)  
Figure 34. Wake-up from low-power modes  
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4.3.2.3  
V
supply  
DD  
The VDD output is an external LDO regulator supplying +5.0 V (3.0 V selectable via a different part number) with 2.0% accuracy. The  
supply is capable of sourcing a maximum of 500 mA steady state current from VPRE (6.5 V typical) for VBATP pin voltages from  
V
DD  
2.5 V to 35 V (45 V transient) [Buck only to V  
= 7.0 V]. This regulator incorporates external current limit short-circuit protection and  
BATP  
internal thermal protection. The regulator remains on in current limitation. The voltage output is stable under all load/line conditions. The  
rail does not turn on until the specified voltage can be obtained from the VPRE node.  
V
DD  
4.3.2.3.1  
VDD pins  
There are three pins associated with the VDD regulator  
• VDDE - Emitter connection for external LDO device.  
• VDDB - Base connection for external LDO device.  
• VDD - Feedback voltage and main supply voltage node  
4.3.2.3.2  
VDD pin functions: VDDE  
Input pin used to sense the voltage (V  
) across the external sense resistor from VPRE to VDDE. Current limit is derived from this  
DDSNS  
sense voltage measurement. Kelvin lines is used by the user to ensure proper voltage sensing, therefore careful layout planning is  
required.  
4.3.2.3.3  
VDD pin functions: VDDB  
Output pin used to for the base drive of the external LDO device.  
4.3.2.3.4  
VDD pin functions: VDD  
Input pin used for feedback control loop of the V supply. A Kelvin trace is provided to the VDD pin for proper feedback control.  
DD  
4.3.2.3.5  
VDD external components  
The V power supply requires an external PNP be connected to the VPRE pin. The V supply uses an external resistor to monitor and  
DD  
DD  
limit the V  
voltage and provide load current limit; this is placed between the VPRE and VDDE pins.  
DDSNS  
4.3.2.4  
V
regulator functional block  
AUX  
The V  
regulator uses an external PNP pass device referenced to the pre regulator voltage, VPRE, via an internal short to battery  
AUX  
protection switch. V  
is capable of driving up to 200mA of load current and can be configured for an output voltage of 5.0 V or 3.3 V  
AUX  
with 3.0% accuracy. Additionally, V  
can be configured as a tracking regulator. In tracking mode, V  
tracks the V regulator voltage  
AUX  
AUX DD  
to within 15 mV, but note that tracking mode is only possible when the V regulator is configured as a 5.0 V supply, as shown in the  
DD  
Table 10.  
The V  
regulator is short to battery protected and current limited (200 mA min.). No external components are required for these two  
AUX  
features. In low-power mode, V  
is disabled and draws zero quiescent current. Upon power up, V  
is disabled. V  
is enabled by  
AUX  
AUX  
AUX  
writing to bits 7 and 6 of the REG register as shown by the following:  
Table 10. REG register  
Bits  
Description  
VAUX[1], VAUX[0]- Vauxilary regulator control  
Regulator OFF  
b7 b6  
00  
Regulator ON. Undervoltage (UV) and overcurrent (OC) and overvoltage (OV) monitoring flags not reported. VAUXdisable in case OC or UV  
detected after 1.0 ms blanking time (monitoring of flags not reported).  
01  
10  
11  
Regulator ON. Undervoltage (UV) and overcurrent (OC) and overvoltage (OV) monitoring flags active. VAUX disable in case OC or UV  
detected after 1.0 ms blanking time. (monitoring of flags not reported).  
Regulator ON. Undervoltage (UV) and overcurrent (OC) and overvoltage (OV) monitoring flags active. VAUX disable in case OC or UV  
detected after 25 μs blanking time.  
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FUNCTIONAL DEVICE OPERATION  
At power up, when the device is in its INIT state, the REG INIT register can be written to set V  
shown by the following:  
to 3.3 V or 5.0 V or 5.0 V tracking, as  
AUX  
Table 11. Setting VAUX to 3.3 V or 5.0 V  
Bits  
Description  
[VAUX5/3]- Select Vauxilary output voltage  
VAUX = 3.3 V  
b2  
0
VAUX = 5.0 V  
1
Tracking Enable  
b1  
0
VAUX is independent of VDD  
VAUX tracks VDD (VAUX does not turn ON if set in 3.3 V part)  
1
Writing to this initialization register is locked out when the device leaves the INIT state. Also, note that the logic does not allow tracking  
mode if V is set to 3.3 V, as Table 12 illustrates.  
DD  
Table 12. VAUX tracking vs. supply  
VDD value  
VAUX value  
VAUX tracking  
SPI Configurable  
Not capable  
VAUX supply  
SPI configurable  
5.0 V  
5.0 V  
3.3 V  
3.3 V  
5.0 V  
3.3 V  
5.0 V  
3.3 V  
Default  
Not capable  
SPI configurable  
Default  
Not capable  
The V  
regulator also contains a digitally controlled soft start to minimize overshoots upon power up. Also included in V  
, is a fold-  
AUX  
AUX  
back current limit.  
4.3.2.4.1  
VAUX pins  
There are three pins exclusively associated with the V  
regulator  
AUX  
• VAUXB - This pin is connected to the base of the external PNP and provides the necessary base current.  
• VAUXE - This pin is connected to the emitter of the external PNP transistor. 33909 includes short to battery blocking FET between  
VPRE and VAUXE.  
• VAUX - This pin is the feedback pin as well as the main supply node for supply the voltage (3.3/5.0 V).  
Additionally:  
• VPRE - supply to VAUX and also note all V  
load current flows into 33909 via the VPRE pin before reaching the external PNP.  
AUX  
4.3.2.4.2  
VAUX external components  
VAUX requires an external PNP with sufficient beta to provide up to 200 mA load current within the constraints of the max base drive  
available from the VAUXB pin. Also, a capacitor is required for loop stability and transient load response.  
4.3.2.4.3  
VAUX fault mode behavior  
Current Limit: V  
limits the load current to 200 mA minimum, 360 mA maximum. A current limit event can be reported via the SPI and  
AUX  
INT pin if configured as such in the REG register.  
Undervoltage: After V has come up, an undervoltage event can be reported via the SPI and INT pin if configured as such in the REG  
AUX  
register. The undervoltage event disables the V  
regulator if configured as such in the REG register. If configured to disable, the V  
AUX  
AUX  
can only be turned back ON by re-writing to the REG register.  
Overvoltage: Overvoltage, or short to V causes an internal switch between the VPRE and VAUX_E to be turned off. This is done to  
BAT  
protect the VAUX PNP device and other things on the Vpre line. This event is not latched. When the overvoltage event has ended, the  
internal switch is re-activated and VAUX returns to normal operation.  
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4.3.2.5  
VBATSNS  
The 33909 contains a VBATSNS function to allow the user to see the battery voltage via the AMUX pin. This pin connects directly to the  
battery (before the series diode connected to VBATP). The VBATSNS is used for additional functions internal to the die and should have  
pcb traces capable of running up to some current. The ratio of the resister divider is 1/5.94 (5.0 V part) or 1/8.9 (3.3 V part).  
4.3.2.5.1  
VBATSNS pin functions: VBATSNS  
Direct battery voltage input sense. A series resistor is required to limit the input current during high voltage transients.  
4.3.2.5.2  
MUX output (AMUX)  
Various signals may be brought out via the analog multiplexer (AMUX) pin. The AMUX pin is referenced to V and can be selected via  
DD  
the SPI. The signals which can be viewed on the AMUX are located in Table 13. The AMUX output pin is clamped to a maximum of V  
volts regardless of the higher voltages present on the input pin.  
DD  
For SG inputs, when an input has been selected to output on the AMUX, the corresponding bit in the MISO data stream is logic [0]. When  
selecting a channel to be read out the AMUX, the user may also set the desired current (16 mA, 2.0 mA, or high-impedance) in the SPI  
word. The MCU may change or update the analog select register via software at any time in Normal Mode when set for SPI selection.  
Table 13. AMUX SPI selection  
Bits  
Description  
MUX_4, MUX_3, MUX_2, MUX_1, MUX_0 - Selection of the device external input signal or internal signal to be measured  
at AMUX pin  
b8 b7 b6 b5 b4 b3  
All functions disable. AMUX pin high-impedance  
Voltage at SG0  
0 00000  
0 00001  
0 00101  
0 00110  
0 00111  
0 01000  
0 01011  
0 10001  
Voltage at SG1  
Voltage at SG2  
Voltage at SG3  
Voltage at SG4  
Voltage at SG5  
Ground  
Voltage at VBATSNS pin. Refer to electrical table for attenuation ratio (approximately 6 for VDD = 5.0 V, approximately 9  
for VDD = 3.3 V) [Default]  
0 10010  
0 10011  
Device internal temperature sensor voltage  
A diode/circuit is brought out the AMUX pin to allow for knowledge of the temperature on the IC. The diode is characterized and a voltage/  
temperature curve generated to allow for temperature monitoring of the IC.  
4.3.2.5.3  
MUX pin functions: AMUX  
The MUX output delivers an internal analog voltage to the MCU A/D input. Value is selected via the SPI. Output is clamped at VDD.  
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4.3.2.5.4  
Undervoltage reset and reset function (RST_B)  
The RST_B pin is an open drain structure with an internal pull-up current source. The low-side driver has limited current capability when  
asserted low, in order to tolerate a short to high level (i.e short to 5.0 V).The RST_B pin voltage is monitored in order to detect a failure  
(e.g. RST_B pin shorted to 5.0 V or GND).  
During sleep mode the under voltage detect circuit polls during normal scan timer periods to determine if V  
condition. If the IC is in under voltage the IC wakes up and issues a reset to the system.  
is in an undervoltage  
BATP  
The RESET pin reports the MCU undervoltage condition at the VDD pin, as well as a failure in the watchdog refresh operation. VDD  
undervoltage reset operates also in Low-power V ON Mode.  
DD  
The undervoltage threshold at VDD can lead to a Reset or an Interrupt. This is selected by the SPI. When “RST-TH1-5”is selected in  
Normal mode, an INT is asserted when VDD falls below “RST-TH1-5”. This allows the MCU to operate in a degraded mode (e.g. with V  
= 4.0 V).  
DD  
4.3.2.5.5  
RESET pin functions: RST_B  
The RESET pin is an open drain structure with an internal pull-up current source.  
4.3.2.5.6  
Serial peripheral interface (SPI)  
The 33909 contains a serial peripheral interface consisting of Serial Clock (SCLK), Serial Data Out (MISO), Serial Data In (MOSI), and  
Chip Select Bar (CS_B). The SPI interface is used (as applicable) to provide configuration, control, and status functions. This device is  
configured as an SPI slave. The 33909 contains a data valid method via SCLK input to keep non-modulo 32-bit transmissions from being  
written into the IC.  
4.3.2.5.7  
Chip select low (CS_B)  
The CS_B input selects this device for serial transfers. On the falling edge of CS_B, the MISO pin is released from tri-state mode, and all  
status information are latched in the SPI shift register. While CS_B is asserted, register data is shifted in the MOSI pin and shifted out the  
MISO pin on each subsequent SCLK. On the rising edge of CS_B, the MISO pin is tri-stated and the fault register reloaded (latched) with  
the current filtered status data. To allow sufficient time to reload the fault registers, the CS_B pin must remain low for a minimum of t  
CSN  
prior to going high again. The CS_B is immune to spurious pulses of shorter duration than t  
neither status bits nor control bits are altered).  
(MISO may come out of tri-state, but  
CSGRT  
The CS_B input contains a passive pull-up to VDD to command the de-asserted state should an open circuit condition occur. This pin has  
threshold compatible voltages allowing proper operation with microprocessors using a 3.3 to 5.0 volt supply.  
4.3.2.5.8  
Serial clock (SCLK)  
The SCLK input is the clock signal input for synchronization of serial data transfer. This pin has threshold compatible voltages allowing  
proper operation with microprocessors using a 3.3 to 5.0 volt supply.  
When CS_B is asserted, both the Master Microprocessor and this device latch input data on the rising edge of SCLK. The SPI master  
typically shifts data out on the falling edge of SCLK, while this device shifts data out on the rising edge of SCLK, to allow more time to  
drive the MISO pin to the proper level.  
This input is used as the input for the modulo-32 bit counter validation. Any SPI transmissions which are NOT exact multiples of 32-bits  
(i.e. clock edges) is treated as an illegal transmission. The entire frame aborts and no information is changed in the configuration or control  
registers. The entire frame aborts and no information is changed in the configuration or control registers.  
4.3.2.5.9  
Serial data output (MISO)  
The MISO output pin is in a tri-state condition when CS_B is negated. When CS_B is asserted, MISO is driven to the state of the MSB of  
the internal register and is the first bit transmitted on MISO. This pin supplies a “rail to rail” output, depending on the voltage at the VDD pin.  
4.3.2.5.10 Serial data input (MOSI)  
The MOSI input takes data from the master microprocessor while CS_B is asserted. The MSB is the first bit of each word received on  
MOSI and the LSB is the last bit of each word received on MOSI. This pin has a threshold level compatible input voltages allowing proper  
operation with microprocessors using a 3.3 to 5.0 V (V ) supply.  
DD  
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4.3.2.5.11 Secured SPI description  
A request is done by sending a specific SPI command the 33909 device provides an unpredictable “random code” on MISO. Software  
must perform a logical change on the code and return it to the device with the new SPI command to perform the desired action. The  
“random code” is different at every exercise of the secured procedure and can be read back at any time. The SPI secure uses the Special  
MODE register for the following transitions:  
- from Normal mode to Init mode  
- from INIT mode to activate SAFE_B mode  
- from Normal mode to Flash mode  
- from Normal mode to Reset mode (reset request).  
- from Normal mode to Reset SG registers (reset request).  
“Random code” is also used when the “advance watchdog” is selected.  
Changing of device critical parameter  
Some critical parameters are configured one time at device power ON only, while the batfail flag is set in the INIT mode. If a change is  
required while device is no longer in INIT mode, device must be set back in INIT mode using the secured SPI procedure.  
4.3.2.5.12 SPI control register definition for SBC operations  
The device uses a 32 -bit SPI word and does not have the ability to daisy chain to another IC. The IC decodes the first byte of the MOSI  
word and supply the requested data on the following 3 bytes. In read register mode, the IC decodes the first byte and provides the full  
contents of the registers called out in the address in the next three bytes. This causes the device status (12-bits) to be cut off at 8-bits.  
In write register mode, the IC decodes the first byte then writes the contents of the MOSI word to the correct address. The MISO word  
sends the full device status and the contents of all the SG registers. In the read flags mode, the IC decodes the first byte and provides the  
full contents of the device flag depending on the address. In some cases the first bit of the second byte (bit 23 is used to determine which  
registers are provided). The MISO output is the full device status along with the contents of the selected device flags address.  
The SPI word structure is as follows:  
MOSI, Master Out Slave In bits:  
• bits 31 and 30 (called C1 and C0) are control bits to select the SPI operation mode (write control bit to device register, read back of  
the control bits, read of device flag).  
• bit 29 to 24 (A5 to A0) to select the register address (read and write).  
• bits 23 to 0 (D23 to D0): control bits  
MISO, Master IN Slave Out bits:  
• bits 31 to 20 is the Device status registers (Do31 to Do20)  
• bits 19 to 17 (Do19 to Do17) are unused in normal (write) MISO words.  
• bits 16 to 0 (Do16 to Do0) the SGn Status register bits.  
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SPI Bit 31 30 29 28 27 26 25 24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
C1  
C0  
A5  
A4  
A3  
A2  
A1  
A0  
D23  
D22  
D21  
D20  
D19  
D18  
D17  
D16  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
MOSI  
Control bits  
Register Address  
Data  
Do  
16  
Do  
15  
Do  
14  
Do  
13  
Do  
12  
Do  
11  
Do  
10  
S31  
S30  
S29  
S28  
S27  
S26  
S25  
S24  
S23  
S22  
S21  
S20  
S19  
S18  
S17  
Do9  
Do8  
Do7  
Do6  
Do5  
Do4  
Do3  
Do2  
Do1  
Do0  
MISO  
LIN23-G  
RST  
SG Status registers  
TRAN-G VREG-G  
CAN-G  
INTb  
VPRE-G SAFE-G  
Device Status  
LIN01-G  
SG-G  
S20  
WU  
Tlim  
Do  
19  
Do  
18  
Do  
17  
Do  
16  
Do  
15  
Do  
14  
Do  
13  
Do  
12  
Do  
11  
Do  
10  
S31  
S30  
S29  
S28  
S27  
S26  
S25  
S24  
S23  
S22  
S21  
Do9  
Do8  
Do7  
Do6  
Do5  
Do4  
Do3  
Do2  
Do1  
Do0  
Reg  
Device Status  
Extended Device Status, Register Control bits or Device Flags  
Figure 35. SPI word  
Table 14. SPI control bits  
Control bits MOSI [31-30] C1-C0  
Type of command  
Note  
Allows user to read back any register.  
Read back of register content  
00  
Write to register address, to control device operation and Write to any register for operational control.  
read back of device status register and SG status register This SPI word results in the “normal” MISO SPI  
01  
set.  
pattern.  
Read back device flags. There are multiple flag  
registers containing various device information  
of interest.  
Read of device flags form a register address  
Reserved  
10  
11  
Not used  
The device contains several registers. Their address is coded on 6-bits (bits 29 to 24). Each register controls or reports part of the device  
function. Data can be written to the register to control the device operation or set the default value or behavior. Every register can also be  
read back to ensure its content (default setting or value previously written) is correct.  
In addition, some of the registers are used to report device flags. The device returns one of three messages, a read of an existing register,  
normal MISO, or a register set of Flags depending on the previous command. After a POR the default word is for the normal MISO  
registers to be read out with the next word determined by the previous SPI command control bits.  
MISO: When a write operation is performed to store data or control bit into the device, MISO pin report a 32-bits fixed device status  
composed of 4 bytes: In a read operation, MISO reports the fixed device status (bits 31 to 24) and the next 24-bits are the content of the  
selected register is the list of device registers and their associated address, coded with bits 29 to 24.  
Table 15. SPI command overview  
Address MOSI  
[31-30]A29...A24  
Quick reference  
name  
Description  
Functionality  
Unused  
00_0000  
00_0001  
00_0010  
Memory Word A  
RAM_A  
1) Write “data word” to register address. 2) Read back “data word”  
from register address  
Memory Word B  
RAM_B  
Init REG  
Init W/D  
Init MISC  
Initialization Regulators  
Initialization Watchdog  
Initialization Miscellaneous functions  
1) Write “device initialization control bits” to register address. 2)  
Read back “initialization control bits” from register address  
00_0011  
00_0100  
1) Write to register to select device Specific Mode, using “Inverted  
Random Code”. 2) Read “Random Code”.  
Specific Modes  
SPE_MODE  
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Table 15. SPI command overview (continued)  
Address MOSI  
Description  
Quick reference  
name  
Functionality  
[31-30]A29...A24  
Timer_A: W/D & Low-power MCU  
consumption  
TIM_A  
TIM_B  
TIM_C  
1) Write “timing values” to register address. 2) Read back register  
“timing values”  
Timer_B: Periodic scan & Cyclic Interrupt  
00_0101  
Timer_C: W/D Low-power & Forced Wake-  
up  
1) Write “device control bits” to register address. 2) Read back  
register “control bits”  
Analog Multiplexer  
Watchdog Refresh  
Interrupt Control  
MUX  
00_0110  
00_0111  
00_1000  
W/D  
Watchdog Refresh Commands  
1) Write “device control bits” to register address, to select device  
operation. 2) Read back register “control bits”  
Interrupt  
1) Write to register to select Low-power mode, with optional  
“Inverted Random code” and select wake-up functionality. 2)  
Read operations: Read back device “Current Mode” Read  
“Random Code”, Leave “Debug Mode”  
Mode register  
MODE  
00_1001  
Regulator Control  
REG  
CAN  
00_1010  
00_1011  
CAN interface control  
1) Write “device control bits” to register address, to select device  
operation. 2) Read back register “control bits”. 3) Read device  
flags from each of the register addresses.  
LIN 0-1  
LIN01  
LIN23  
SGWU  
00_1100  
00_1101  
00_1110  
LIN 2-3  
Enable for wake-up from sleep after a change of state for SG  
inputs: Wake-up enable = 1, Non-wake-up = 0 (Default = 1)  
SG wake-up enable  
Enable polling at 1.0 ms for fast wake-up independent of nominal  
sleep polling timer: Override polling settings for SG5-0 to  
1.0 ms = 1, use polling setting as defined in sleep state command  
= 0 (Default = 0)  
Fast scan for SG5-0  
SGFS  
00_1111  
01_0000  
Enable for wake-up from sleep after a change of state for SG  
inputs after three consecutive polling results confirming change of  
state: Wake-up enable = 1, Non-wake-up = 0 (Default = 0)  
SG wake-up delay enable  
SGWUD  
Configure Wetting current sources to desired current level for  
SG4-0 (Default = 101 = 16 mA)  
Wetting Command Register 0  
Wetting Command Register 1  
SGM0  
SGM1  
01_0001  
Configure Wetting current sources to desired current level for  
SG5 (Default = 101 = 16 mA)  
01_0010  
Enable Wetting current source timer: Enable Wetting current  
source timer = 1, disable – Wetting current ON full time = 0  
(Default = 1)  
Wetting current timer  
Tri-state command  
SGMT  
SGT  
01_0011  
Enable tristate at input: Enable tristate = 1, Input active = 0  
(Default = 1)  
01_0100  
Additionally, there are three specific SPI words to carry out certain functions on the IC.  
Table 16. SPI specific instructions  
SPI MOSI Word  
Function  
Command Part of Watchdog Inhibit mode  
Acknowledge Safe condition  
Wake-up via the SPI  
Resulting Behavior  
Even with WDI pin > 10 V, IC leaves WD Inhibit mode (requires WD refreshed)  
Clears SAFE registers and unasserts SAFE_B pin (after SAFE condition is gone)  
Wakes the IC from low-power mode (VDD ON) with specific SPI word  
0x5E000000  
0x5F000000  
0x49000010  
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Table 17. Overview individual bits  
Type of command  
MOSI/  
MISO  
Control  
bits [31-30]  
Address [29-24]  
address  
Bits [23-0]  
All 0’s (except when noted)  
Register control bits content  
Control Bits  
MOSI  
MISO  
MOSI  
MISO  
00  
Read back of “device control bits”  
Device Fixed Status (8 bits)  
address  
Device Fixed Status (12 bits)  
01  
Write device control bit to address selected by bits  
(29-24). MISO return 32-bits status  
Normal MISO status registers  
Read device flags and wake-up flags, from register  
address (bit29-24). MISO return fixed device status  
(bit 31-20) + flags from the selected address  
(requires a double write)  
Read of device flags from a register  
address, and sub address LOW (bit 23)  
address  
MOSI  
MISO  
10  
Device Fixed Status (12 bits)  
Flag Registers  
Table 18. MISO device status bits description  
Flag  
Description  
Indicates an INT has occurred and INT flags are pending to be read.  
INT  
WU  
Indicates a Wake-up has occurred and Wake-up flags are pending to be read.  
Indicates an Reset has occurred and the flags reporting the Reset source are pending to be read.  
Indicates a TLIM has occurred and TLIM flags are pending to be read.  
The INT, or WU or RST source is a transceiver interface (CAN or LIN).  
The INT, or WU or RST source is the VPRE switch mode power supply.  
The INT, or WU or RST source is a regulator supply (VDD or VAUX).  
The INT, or WU or RST source is from a SAFE condition.  
RST  
TLIM  
TRAN-G  
VPRE-G  
VREG-G  
SAFE_B-G  
LIN23-G  
LIN01-G  
CAN-G  
The INT, or WU or RST source is a LIN bus (LIN2 or LIN3).  
The INT, or WU or RST source is a LIN bus (LIN0 or LIN1).  
The INT, or WU or RST source is CAN interface. CAN local or CAN bus source.  
The INT, or WU or RST source is SG interface, flag from SG inputs.  
SG-G  
Table 19. Internal memory registers A and B, RAM_A and RAM_B  
MOSI, bits 23-0  
MOSI First Byte [31-24] [b_31  
b_30] 00_0xxx  
a23 a22 a21 a20 a19 a18 a17 a16 a15 a14 a13 a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0  
Default state  
0
Condition for default  
POR  
RAM_A  
00_0001  
Rb2 Rb2 Rb2 Rb2 Rb1 Rb1 Rb1 Rb1 Rb1 Rb1 Rb1 Rb1 Rb1 Rb1  
Rb9 Rb8 Rb7 Rb6 Rb5 Rb4 Rb3 Rb2 Rb1 Rb0  
3
2
1
0
9
8
7
6
5
4
3
2
1
0
Default state  
0
Condition for default  
POR  
RAM_B  
00_0010  
Rb2 Rb2 Rb2 Rb2 Rb1 Rb1 Rb1 Rb1 Rb1 Rb1 Rb1 Rb1 Rb1 Rb1  
Rb9 Rb8 Rb7 Rb6 Rb5 Rb4 Rb3 Rb2 Rb1 Rb0  
3
2
1
0
9
8
7
6
5
4
3
2
1
0
Default state  
0
Condition for default  
POR  
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Table 20. Initialization registers - regulator, INIT REG  
MOSI bits  
[31-24]  
[b_31 b_30] 00_0011  
MOSI bits 7-0  
bit 4  
bit 7  
bit 6  
bit 5  
bit 3  
bit 2  
bit 1  
bit 0  
00_0011  
Default state  
VPRE_Disable  
0
VDDLrst[1]  
0
VDDLrst[0]  
0
VDDrstD[1]  
1
VDDrstD[0]  
0
VAUX5/3 VAUXtracker  
Unused  
0
0
0
Condition for default  
POR/Reset  
Table 21. Individual bits (watchdog)  
Bit  
Description  
VPRE_Disable  
VPRE is enabled and used by the IC  
Disable VPRE internal circuitry (use external source to power VPRE node)  
VDDLRST[1] VDDL RST[0] - Select the VDD undervoltage threshold, to activate Reset pin and/or INT  
Reset at approximately 0.9 VDD  
b7  
0
1
b6, b5  
00  
01  
10  
11  
b4, b3  
00  
01  
10  
11  
b2  
0
.
INT at approximately 0.9 VDD, Reset at approximately 0.7 VDD  
Reset at approximately 0.7 VDD  
Reset at approximately 0.9 VDD  
VDDRSTD[1] VDDRSTD[0] - Select the Reset pin low lev duration, after VDD rises above the VDD undervoltage threshold  
1.0 ms  
5.0 ms  
10 ms [Default]  
20 ms  
[VAUX5/3]- Select Vauxilary output voltage  
VAUX = 3.3 V  
VAUX = 5.0 V  
1
Tracking Enable  
b1  
0
VAUX is independent of VDD  
VAUX tracks VDD (ignored if VDD and VAUX not set to 5.0 V)  
Unused  
1
b0  
Table 22. Initialization registers - watchdog  
MOSI bits 15-8  
MOSI bits [31-24] [b_31  
b_30] 00_0011  
bit 15  
bit 14  
bit 13  
bit 12  
bit 11  
bit 10  
bit 9  
bit 8  
WD  
SAFE_B[0]  
00_0011  
WD2INT  
0
MCU_OC  
0
OC-TIM  
0
WD SAFE_B[1]  
0
WD_spi[1]  
0
WD_spi[0]  
0
WD N/Win  
0
Default state  
0
Condition for default  
POR  
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Table 23. Individual bits (watchdog)  
Bit  
Description  
WD2INT - Select the maximum time delay between INT occurrence and INT source read SPI command  
Function disabled. No constraint between INT occurrence and INT source read.  
b15  
0
INT source read must occur before the remaining of the current W/D period plus 2 complete W/D periods.  
1
MCU_OC, OC-TIM - In Low-power VDDON, select watchdog refresh and VDD current monitoring functionality.VDD_OC_LP threshold  
is defined in device electrical parameters (approximately 2.0 mA)  
b14, b13  
In low-power mode, W/D is not selected  
In Low-power VDD ON mode, VDD overcurrent has no effect.  
no W/D + 00  
no W/D + 01  
In Low-power VDD ON mode, VDD overcurrent has no effect.  
In Low-power VDD ON mode, VDD current > VDD_OC_LP threshold for a time > I_mcu_OC is a wake-up event. I_mcu_OC time is  
selected in Timer register (selection range from 0.1 to 32 ms – 8 total options).  
no W/D + 10  
no W/D + 11  
Unused  
In low-power mode W/D is selected  
In Low-power VDD ON mode, VDD current > VDD_OC_LP threshold has no effect. W/D refresh must occur by SPI command.  
W/D + 00  
W/D + 01  
In Low-power VDD ON mode, VDD current > VDD_OC_LP threshold has no effect. W/D refresh must occur by SPI command.  
In Low-power VDD ON mode, VDD current > VDD_OC_LP threshold for a time < I_mcu_OC is a W/D refresh condition. VDD current >  
V
DD_OC_LP threshold for a time > I_mcu_OC is wake-up event. I_mcu_OC time is selected in Timer register (selection range from 0.1  
W/D + 10  
to 32 ms – 8 total options)  
Unused  
W/D + 11  
WD SAFE_B - Select the activation of the SAFE_B pin low, at first or second consecutive RESET pulse.  
SAFE_B pin is set low at the time of the RESET pin low activation  
SAFE_B pin is set low at the second consecutive time RESET pulse  
SAFE_B pin is set low at the third consecutive time RESET pulse  
SAFE_B pin is set low at the fifth consecutive time RESET pulse  
WD_spi[1] WD_spi[0] - Select the Watchdog (W/D) Operation  
b12, b11  
00  
01  
10  
11  
b10, b9  
00  
Simple Watchdog selection: W/D refresh done by a 8 bits or 32 bits SPI  
Enhanced 1: Refresh is done using the Random Code, and by a single 32 bits.  
Enhanced 2: Refresh is done using the Random Code, and by two 32 bit commands.  
Enhanced 4: Refresh is done using the Random Code, and by four 32 bit commands.  
WD N/Win - Select the Watchdog (W/D) Window or Timeout operation  
Watchdog operation is TIMEOUT, W/D refresh can occur anytime in the period  
Watchdog operation is WINDOW, W/D refresh must occur in the open window (second half of period)  
01  
10  
11  
b8  
0
1
Table 24. Initialization registers - miscellaneous, INIT MISC  
MOSI, bits 23-16  
bit 20 bit 19  
LPM w RND AMUX config INT_B pulse INT_B width INT_B flash  
MOSI bits [31-24]  
[b_31 b_30] 00_0011  
bit 23  
bit 22  
bit 21  
bit 18  
bit 17  
bit 16  
00_0011  
Default state  
SAFE_B[2]  
0
SAFE_B[1]  
0
SAFE_B[0]  
0
0
0
0
0
0
Condition for default  
POR  
33909  
NXP Semiconductors  
62  
FUNCTIONAL DEVICE OPERATION  
Table 25. Individual bits (INIT MISC)  
Bit  
Description  
LPM w RND - Select the functionality to change mode (enter in Low-power) using the device Random Code  
b23  
Function disable: the Low-power mode can be entered without usage of Random Code  
0
Function enabled: the Low-power mode is entered using the Random Code  
1
AMUX SPI configured  
b22  
AMUX is determined by the SPI  
0
N/A  
1
INT_B pulse - Select INT pin operation: low level pulse or low level  
b21  
INT_B pin asserts a low level pulse, duration selected by bit [b4]  
0
INT_B pin assert a permanent low level (no pulse)  
1
INT_B width - Select the INT pulse duration  
b20  
INT_B pulse duration is typ. 100 μs. Refer to dynamic parameter table for exact value.  
0
INT_B pulse duration is typ. 25 μs. Refer to dynamic parameter table for exact value.  
1
INT_B flash - Select INT pulse generation at 50% of the Watchdog Period in Flash mode  
b19  
Function disable  
0
Function enable: an INT pulse occurs at 50% of the Watchdog Period when device in Flash mode.  
1
b18, b17, b16  
0xx  
SAFE_B[2], SAFE_B[1], SAFE_B[0] - Set state of Safe operation  
Function disable (W/D inhibit mode)  
RB3  
RB2  
RB1  
RA  
100  
101  
110  
111  
Table 26. Specific mode register SPE-MODE  
MOSI, bits 7-0  
MOSI bits [31-24]  
[b_31 b_30] 00_0100  
MOSI bits  
23-11  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
00_0100  
Default state  
Unused  
0
Rnd_C7b  
0
Rnd_C6b  
0
Rnd_C5b  
0
Rnd_C4b  
Rnd_C3b  
0
Rnd_C2b  
0
Rnd_C1b  
0
Rnd_C0b  
0
Condition for default  
POR  
Table 27. Specific mode register SPE-MODE  
MOSI, bits 10-8  
MOSI bits [31-24]  
[b_31 b_30] 00_0100  
MOSI bits 23-  
11  
bit 10  
bit 9  
bit 8  
00_0100  
Default state  
Unused  
0
Sel_Mod[2]  
0
Sel_Mod[1]  
Sel_Mod[0]  
0
0
Condition for default  
POR  
33909  
63  
NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
Table 28. Individual bit description (SPE-MODE)  
Bit  
Description  
Sel_Mod[2] Sel_Mod[1], Sel_Mod[0]- Mode selection: these 3 bits are used to select which mode the device enters upon a SPI  
command.  
b10, b9, b8  
RESET mode  
INIT mode  
000  
001  
FLASH mode  
RESET SG inputs  
N/A  
010  
011  
100 - 111  
[Rnd_C7b... Rnd_C0b]- Random Code inverted, these 8 bits are the inverted bits obtained from the SPE-MODE Register read  
command.  
b7....b0  
The SPE MODE register is used for the following operation:  
- Set the device in Reset mode, to exercise or test the Reset functions.  
- Go to Init mode, using the Secure SPI command.  
- Go to Flash mode (in this mode the watchdog timer can be extended up to 32 sec).  
- Reset the registers for SG (switch to ground) inputs only.  
- Activate the SAFE_B pin by S/W.  
These mode (called Special Mode) are accessible via secured SPI command, which consist in two commands:  
1. Reading a random code and  
2. Write the inverted random code plus mode selection or SAFE_B pin activation:  
Return to INIT mode is done as follow (this is done from Normal mode only):  
1. Read random code:  
MOSI: 0000 0100 0000 0000 0000 0000 0000 0000 [Hex:0x 04 00 00 00]  
MISO report 32 bits, random code are bits (7-0)  
MISO = xxxx xxxx xxxx xxxx xxxx xxxx R7 R6 R5 R4 R3 R2 R1 R0 (Rx = 8 bits random code)  
2. Write INIT mode + random code inverted  
MOSI: 0100 0100 0000 0000 0000 0001 Ri7 Ri6 Ri5 Ri4 Ri3 Ri2 Ri1 Ri0 [Hex:0x 44 00 01 HH] (Rix = random code inverted)  
MISO: xxxx xxxx xxxx xxxx xxxx xxxx xxxx xxxx (don't care)  
SAFE_B pin activation: SAFE_B pin can be set low, in INIT and Normal mode, with following commands:  
1. Read random code:  
MOSI: 0000 0100 0000 0000 0000 0000 0000 0000 [Hex:0x 04 00 00 00]  
MISO report 32 bits, random code are bits (7-0)  
MISO = xxxx xxxx xxxx xxxx xxxx xxxx R7 R6 R5 R4 R3 R2 R1 R0 (Rx = 8 bits random code)  
2. Write INIT mode + random code bits 7:6 not inverted and random code bits 5:0 inverted  
MOSI: 0100 0100 0000 0000 0000 0001 R7 R6 Ri5 Ri4 Ri3 Ri2 Ri1 Ri0 [Hex 0x 44 00 01 HH] (Ri7-6 = random code, Ri5-0 = random  
code inverted)  
MISO: xxxx xxxx xxxx xxxx xxxx xxxx xxxx xxxx (don't care)  
Go to Reset mode is done as follow (this is done from Normal mode only):  
1. Read random code:  
MOSI: 0000 0100 0000 0000 0000 0000 0000 0000 [Hex:0x 04 00 00 00]  
MISO report 32 bits, random code are bits (7-0)  
MISO = xxxx xxxx xxxx xxxx xxxx xxxx R7 R6 R5 R4 R3 R2 R1 R0 (Rx = 8 bits random code)  
33909  
NXP Semiconductors  
64  
FUNCTIONAL DEVICE OPERATION  
2. Write Reset mode + random code bits inverted  
MOSI: 0100 0100 0000 0000 0000 0000 Ri7 Ri6 Ri5 Ri4 Ri3 Ri2 Ri1 Ri0 [Hex 0x 44 00 00 HH] (RiX = random code inverted)  
MISO: xxxx xxxx xxxx xxxx xxxx xxxx xxxx xxxx (don't care)  
Go to Flash mode is done as follow (this is done from Normal mode only):  
1. Read random code:  
MOSI: 0000 0100 0000 0000 0000 0000 0000 0000 [Hex:0x 04 00 00 00]  
MISO report 32 bits, random code are bits (7-0)  
MISO = xxxx xxxx xxxx xxxx xxxx xxxx R7 R6 R5 R4 R3 R2 R1 R0 (Rx = 8 bits random code)  
2. Write INIT mode + random code bits 7:6 not inverted and random code bits 5:0 inverted  
MOSI: 0100 0100 0000 0000 0000 0010 Ri7 Ri6 Ri5 Ri4 Ri3 Ri2 Ri1 Ri0 [Hex 0x 44 00 02 HH] (RiX = random code inverted)  
MISO: xxxx xxxx xxxx xxxx xxxx xxxx xxxx xxxx (don't care)  
Reset SG registers is done as follow (this is done from Normal mode only):  
1. Read random code:  
MOSI: 0000 0100 0000 0000 0000 0000 0000 0000 [Hex:0x 04 00 03 00]  
MISO report 32 bits, random code are bits (7-0)  
MISO = xxxx xxxx xxxx xxxx xxxx xxxx R7 R6 R5 R4 R3 R2 R1 R0 (Rx = 8 bits random code)  
2. Write SG reset mode + random code bits inverted  
MOSI: 0100 0100 0000 0000 0000 0011 Ri7 Ri6 Ri5 Ri4 Ri3 Ri2 Ri1 Ri0 [Hex 0x 44 00 03 HH] (RiX = random code inverted)  
MISO: xxxx xxxx xxxx xxxx xxxx xxxx xxxx xxxx (don't care).  
Table 29. Watchdog and low-power MCU consumption, TIM_A  
MOSI, bits 7-0  
MOSI bits [31-24]  
[b_31 b_30] 00_0101  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
00_0101  
Default state  
I_mcu[2]  
0
I_mcu[1]  
0
I_mcu[0]  
0
W/D Nor[4]  
1
W/D_N[3]  
1
W/D_Nor[2] W/D_N[1] W/D_Nor[0]  
1
1
0
Condition for default  
POR  
Table 30. Individual bit description for I_mcu timer  
Typical Timing Value (in ms)  
b6, b5  
b7  
00  
3 (def)  
4
01  
6
10  
12  
16  
11  
24  
32  
0
1
8
Table 31. Individual bit description for watchdog period in device normal mode  
Typical Timing Value (in ms)  
b2, b1, b0  
b4, b3  
000  
2.5  
3
001  
5
010  
10  
12  
14  
16  
011  
20  
24  
28  
32  
100  
40  
48  
56  
64  
101  
80  
110  
160  
192  
224  
111  
320  
384  
448  
512  
00  
01  
10  
11  
6
96  
3.5  
4
7
112  
128  
8
256 (def)  
33909  
65  
NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
Table 32. Timer register B, periodic scan and cyclic INT, in device low-power mode, TIM_B  
MOSI, bits 15-8  
bit 15  
bit 14  
bit 13  
bit 12  
bit 11  
bit 10  
bit 9  
bit 8  
Cyc-sen[3]  
1
Cyc-sen[2]  
1
Cyc-sen[1]  
0
Cyc-sen[0]  
0
Cyc-int[3]  
0
Cyc-int[2]  
0
Cyc-int[1]  
0
Cyc-int[0]  
0
Default state  
Condition for default  
POR  
Table 33. Individual bit description for periodic scan  
Typical timing value (in ms)  
b14, b13, b12  
b15  
000  
3
001  
6
010  
12  
011  
24  
100  
48  
64 (def)  
101  
96  
110  
111  
384  
512  
0
192  
256  
1
4
8
16  
32  
128  
Table 34. Individual bit description for periodic interrupt  
Typical timing value (in ms)  
b10, b9, b8  
b11  
000  
6 (def)  
8
001  
12  
010  
011  
48  
100  
96  
101  
192  
258  
110  
111  
768  
0
24  
32  
384  
512  
1
16  
64  
128  
1024  
Table 35. Timer register C, watchdog LP mode and forced wake-up timer, TIM_C  
MOSI bits 23-16  
bit 23  
WD-LP-F[3]  
0
bit 22  
WD-LP-F[2]  
0
bit 21  
WD-LP-F[1]  
0
bit 20  
WD-LP-F[0]  
0
bit 19  
bit 18  
FWU[2]  
0
bit 17  
FWU[1]  
0
bit 16  
FWU[0]  
0
FWU[3]  
Default state  
0
Condition for default  
POR  
Table 36. Individual bit description for watchdog in low-power VDD on mode  
Typical timing value (in ms)  
b22, b21, b20  
b23  
000  
12 (def)  
16  
001  
24  
010  
48  
011  
96  
100  
192  
256  
101  
384  
512  
110  
111  
1536  
2048  
0
768  
1
32  
64  
128  
1024  
33909  
NXP Semiconductors  
66  
FUNCTIONAL DEVICE OPERATION  
Table 37. Individual bit description for watchdog in flash mode  
Typical timing value (in ms)  
b22, b21, b20  
b23  
000  
48 (def)  
256  
001  
96  
010  
192  
011  
384  
100  
768  
101  
1536  
8192  
110  
3072  
16384  
111  
6144  
32768  
0
1
512  
1024  
2048  
4096  
Table 38. Individual bit description for forced wake-up  
Typical timing value (in ms)  
b18, b17, b16  
b19  
000  
48 (def)  
64  
001  
96  
010  
192  
258  
011  
384  
512  
100  
101  
1536  
2048  
110  
3072  
4096  
111  
6144  
8192  
0
1
768  
128  
1024  
Table 39. AMUX  
MOSI, bits 7-0  
bit 4  
MOSI First Byte [31-24] MOSI, bits  
[b_31 b_30] 00_0110  
23-8  
bit 7  
bit 6  
bit 5  
bit 3  
MUX_0  
bit 2  
bit 1  
bit 0  
00_0110  
Default state  
Unused  
0
MUX_4  
0
MUX_3  
0
MUX_2  
0
MUX_1  
0
Unused  
0
Unused  
0
Unused  
0
0
Condition for default  
POR  
Table 40. Individual bits AMUX  
Bits  
Description  
MUX_4, MUX_3, MUX_2, MUX_1, MUX_0 - Selection of the device external input signal or internal signal to be measured at AMUX  
pin  
b8 b7 b6 b5 b4 b3  
All functions disable. AMUX pin high-impedance.  
Voltage at SG0  
0 00000  
0 00001  
0 00101  
0 00110  
0 00111  
0 01000  
0 01011  
Voltage at SG1  
Voltage at SG2  
Voltage at SG3  
Voltage at SG4  
Voltage at SG5  
Voltage at VBATSNS pin. Refer to electrical table for attenuation ratio (approximately 6 for VDD = 5.0 V, approximately 9 for  
VDD = 3.3 V) [Default].  
0 10010  
0 10011  
Device internal temperature sensor voltage  
33909  
67  
NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
Table 41. Watchdog refresh register, W/D  
MOSI bits 7-0  
bit 3  
MOSI bits [31-24]  
[b_31 b_30] 00_0111  
MOSI bits  
23-8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 2  
bit 1  
bit 0  
00_0111  
Default state  
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Condition for default  
POR  
Table 42. INT_B register(25)  
MOSI bits 7-0  
bit 4  
MOSI bits [31-24]  
[b_31 b_30] 00_1000  
MOSI bits  
23-9  
bit8  
bit 7  
bit 6  
bit 5  
LIN1 fail  
0
bit 3  
bit 2  
bit 1  
bit 0  
CAN  
failure  
00_1000  
Unused  
MCU req LIN3 fail LIN2fail  
SAFE_B  
0
LIN0 fail  
Vmon  
0
Default state  
0
0
0
0
0
0
Condition for default  
POR  
Notes  
25. The first time the device is set in Normal mode, the CAN is in Sleep wake-up enable (10). The next time device is set in Normal mode, the CAN  
state is controlled by the bit7 and bit6 states.  
Table 43. Individual bit description (INT_B register)  
Bits  
Description  
MCU req- Control bit to request an INT. INT occurs once when the bit is enabled.  
b8  
0
INT disable  
INT enable  
LIN3 Fail  
1
b7  
0
INT disable  
INT enable  
LIN2 Fail  
1
b6  
0
INT disable  
INT enable  
LIN1 Fail  
1
b5  
0
INT disable  
INT enable  
LIN0 Fail  
1
b4  
0
NT disable  
INT enable  
SAFE_B- description to be done  
INT disable  
INT enable  
1
b3  
0
1
b2  
0
INT disable  
INT enable  
1
33909  
NXP Semiconductors  
68  
FUNCTIONAL DEVICE OPERATION  
Table 43. Individual bit description (INT_B register) (continued)  
Bits  
Description  
CAN failure- control bit for CAN failure INT (CANH/L to GND, VDD or VBATP, CAN overcurrent, Driver Over Temp, TX-PD, RX-PR,  
RX2HIGH, and CANBUS Dominate clamp)  
b1  
INT disable  
INT enable  
0
1
Vmon- enable interruption by voltage monitoring of one of the voltage regulator: VAUX, CAN5V, VDD(IDD overcurrent, overvoltage,  
undervoltage), VSUV, VSOV, VBATP_BATFAIL, CAN5V low or thermal shutdown, VAUXlow or VAUXovercurrent  
b0  
INT disable  
INT enable  
0
1
Table 44. MODE register, moDE  
MOSI bits 7-0  
bit 3  
MOSI bits [31-24]  
[b_31 b_30] 00_1001  
MOSIbits  
23-8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 2  
bit 1  
bit 0  
00_1001  
Unused  
N/A  
Mode[4]  
N/A  
Mode[3]  
N/A  
Mode[2]  
N/A  
Mode[1]  
N/A  
Mode[0]  
N/A  
Rnd_b[2]  
N/A  
Rnd_b[1]  
N/A  
Rnd_b[0]  
N/A  
Default state  
Table 45. Individual bit description for low-power VDD off selection and operation mode  
Low-power VDD OFF Selection and Function  
b7, b6, b5, b4, b3  
0 1100  
FWU  
OFF  
OFF  
ON  
Periodic Sense  
OFF  
ON  
0 1101  
0 1110  
OFF  
ON  
0 1111  
ON  
Table 46. Individual bit description for low-power VDD on selection and operation mode  
Low-power VDD on selection and function  
b7, b6, b5, b4, b3  
FWU  
Periodic Sense  
Periodic INT  
Watchdog  
1 0000  
1 0001  
1 0010  
1 0011  
1 0100  
1 0101  
1 0110  
1 0111  
1 1000  
1 1001  
1 1010  
1 1011  
1 1100  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
ON  
OFF  
OFF  
OFF  
OFF  
ON  
OFF  
OFF  
ON  
OFF  
ON  
OFF  
ON  
ON  
OFF  
OFF  
ON  
OFF  
ON  
ON  
ON  
OFF  
ON  
ON  
ON  
OFF  
OFF  
OFF  
OFF  
ON  
OFF  
OFF  
ON  
OFF  
ON  
ON  
ON  
OFF  
ON  
ON  
ON  
ON  
OFF  
OFF  
33909  
69  
NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
Table 46. Individual bit description for low-power VDD on selection and operation mode (continued)  
Low-power VDD on selection and function  
b7, b6, b5, b4, b3  
FWU  
Periodic Sense  
Periodic INT  
Watchdog  
1 1101  
1 1110  
1 1111  
ON  
ON  
ON  
ON  
ON  
ON  
OFF  
ON  
ON  
OFF  
ON  
ON  
Table 47. REGULATOR register, REG  
MOSI bits 7-0  
MOSI bits [31-24]  
[b_31 b_30] 00_1010  
MOSI bits  
23-8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
00_1010  
Default state  
Unused  
0
VAUX[1]  
0
VAUX[0]  
0
Unused  
N/A  
CAN5V[1]  
0
CAN5V[0]  
0
Unused  
N/A  
Unused  
N/A  
VDDoff en  
N/A  
Condition for default  
POR  
POR  
Table 48. Individual bit description (REG)  
Bits  
Description  
VAUX[1], VAUX[0]- Vauxilary regulator control  
Regulator OFF  
b7 b6  
00  
Regulator ON. Undervoltage (UV) and overcurrent (OC) and overvoltage (OV) monitoring flags not reported. VAUX disable in case  
OC or UV detected after 1.0 ms blanking time (monitoring of flags not reported).  
01  
10  
11  
Regulator ON. Undervoltage (UV) and overcurrent (OC) and overvoltage (OV) monitoring flags active. VAUX disable in case OC or  
UV detected after 1.0 ms blanking time. (monitoring of flags not reported).  
Regulator ON. Undervoltage (UV) and overcurrent (OC) and overvoltage (OV) monitoring flags active. VAUX disable in case OC or  
UV detected after 25 μs blanking time.  
CAN5V[1], CAN5V[0]- CAN5V regulator control  
b4 b3  
00  
Regulator OFF  
Regulator ON. Thermal protection active. Undervoltage (UV) and overcurrent (OC) monitoring flags not reported.  
Regulator ON. Thermal protection active. Undervoltage (UV) and overcurrent (OC) monitoring flags active.  
01  
10  
Regulator ON. Thermal protection active. Undervoltage (UV) and overcurrent (OC) monitoring flags active. CAN5V disable in case  
OC or UV detected after 25 μs blanking time.  
11  
VDDoff en - Control bit to allow transition into Low-power VDDOFF mode (to prevent VDD turn OFF)  
Disable Usage of Low-power VDD OFF mode  
b0  
0
Enable Usage of Low-power VDD OFF mode  
1
Table 49. CAN registers, CAN(26)  
MOSI bits [31-24]  
MOSI bits 7-0  
bit 4  
[b_31 b_30] 00_1011  
bit 7  
bit 6  
bit 5  
bit 3  
bit 2  
bit 1  
bit 0  
CAN  
mod[1]  
CAN  
mod[0]  
00_1011  
Unused  
0
Unused  
0
Unused  
CMFB Enable  
0
Wake-up 1/3  
0
CAN int  
Default state  
0
1
0
0
Condition for default  
POR  
note  
POR  
Note:  
26. The first time the device is set in Normal mode, the CAN is in Sleep wake-up enable (10). The next time the device is set in Normal mode, the  
CAN state is controlled by the bit 2 and bit 1 states.  
33909  
NXP Semiconductors  
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FUNCTIONAL DEVICE OPERATION  
Table 50. Individual bit description (CAN)  
Bits  
Description  
CMFB enable for CAN  
b4  
0
Common Mode Feed Back circuit is turned off  
Common Mode Feed Back circuit is turned on  
Wake-up 1/3- Selection of CAN wake-up mechanism  
Three dominant pulses wake-up mechanism  
Single dominant pulse wake-up mechanism  
1
b3  
0
1
CAN mod[1], CAN mod[0]- CAN interface mode control, wake-up enable/disable  
CAN interface in sleep mode, CAN wake-up disable.  
b2 b1  
00  
01  
CAN interface in receive only mode, CAN driver disable.  
CAN interface is in sleep mode, CAN wake-up enabled. In device low-power mode, CAN wake-up is reported by device wake-up. In  
device normal mode, CAN wake-up reported by INT and Flags generated.  
10  
CAN interface in transmit and receive mode  
11  
b0  
0
CAN INT - Select the CAN failure detection reporting  
Select INT generation when a bus failure is fully identified and decoded (i.e. after five dominant pulses on TxCAN)  
Select INT generation as soon as a bus failure is detected, event if not fully identified.  
1
Table 51. LIN 0-1 register  
MOSI bits 9-0  
MOSI bits [31-24]  
MOSIbits  
[b_31 b_30] 00_1100  
23-10  
bit 9  
bit 8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
LIN1  
J260  
2
LIN1  
mode[1]  
LIN1 Slew LIN1 Slew  
LIN0  
mode[1] mode[0]  
LIN0  
LIN0 Slew LIN0 Slew  
LIN0  
J2602  
00_1100  
Unused  
0
LIN1mode  
[0]  
rate[1]  
0
rate[0]  
0
rate[1]  
0
rate[0]  
0
Default state  
1
0
0
1
0
0
Condition for default  
POR  
Table 52. Individual bit description (LIN0-1)  
Bits  
Description  
LIN1 mode [1], LIN1 mode [0]- LIN 1 interface mode control, wake-up enable/disable  
LIN1 disable, wake-up capability disable  
not used  
b9 b8  
00  
01  
LIN1 disable, wake-up capability enable  
LIN1 Transmit Receive mode  
10  
11  
Slew rate[1], Slew rate[0] LIN 1 slew rate selection  
Slew rate for 20 kbit/s baud rate  
Slew rate for 10 kbit/s baud rate  
Slew rate for fast baud rate  
b7 b6  
00  
01  
10  
Slew rate for fast baud rate  
11  
LIN1 J2602  
b5  
LIN1 remain recessive  
0
LIN1 operates below 6 V  
1
33909  
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NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
Table 52. Individual bit description (LIN0-1) (continued)  
Bits  
Description  
LIN0 mode [1], LIN0 mode [0]- LIN 0 interface mode control, wake-up enable/disable  
LIN0 disable, wake-up capability disable  
not used  
b4 b3  
00  
01  
LIN0 disable, wake-up capability enable  
LIN0 Transmit Receive mode  
10  
11  
Slew rate[1], Slew rate[0] LIN0 slew rate selection  
Slew rate for 20 kbit/s baud rate  
Slew rate for 10 kbit/s baud rate  
Slew rate for fast baud rate  
b2 b1  
00  
01  
10  
Slew rate for fast baud rate  
11  
LIN0 J2602  
b0  
LIN0 remain recessive  
0
LIN0 operate below 6.0 V  
1
Table 53. LIN 2-3 register  
MOSI bits [31-24]  
MOSI  
bits 23-  
MOSI bits 9-0  
[b_31 b_30] 00_1101  
bit 9  
bit 8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
10  
LIN3  
Slew  
rate[1]  
LIN2  
Slew  
rate[0]  
LIN3  
mode[1] mode[0]  
LIN3  
LIN3 Slew  
rate[0]  
LIN2  
mode[1]  
LIN2  
mode[0]  
LIN2Slew  
rate[1]  
LIN2  
J2602  
00_1101  
Unused  
0
LIN3 J2602  
Default state  
1
0
0
0
0
1
0
0
0
0
Condition for default  
POR  
Table 54. Individual bit description (LIN2-3)  
Bits  
Description  
LIN3 mode [1], LIN3 mode [0]- LIN 3 interface mode control, wake-up enable/disable  
LIN3 disable, wake-up capability disable  
Not used  
b9 b8  
00  
01  
LIN3 disable, wake-up capability enable  
LIN3 Transmit Receive mode  
10  
11  
Slew rate[1], Slew rate[0] LIN 3 slew rate selection  
Slew rate for 20 kbit/s baud rate  
b7 b6  
00  
Slew rate for 10 kbit/s baud rate  
01  
Slew rate for fast baud rate  
10  
Slew rate for fast baud rate  
11  
LIN3 J2602  
b5  
LIN3 remain recessive  
0
LIN3 operate below 6.0 V  
1
LIN2 mode [1], LIN2 mode [0]- LIN2 interface mode control, wake-up enable/disable  
LIN2 disable, wake-up capability disable  
b4 b3  
00  
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FUNCTIONAL DEVICE OPERATION  
Table 54. Individual bit description (LIN2-3) (continued)  
Bits  
Description  
Not used  
01  
10  
11  
b2 b1  
00  
01  
10  
11  
b5  
0
LIN2 disable, wake-up capability enable  
LIN2 Transmit Receive mode  
Slew rate[1], Slew rate[0] LIN 2 slew rate selection  
Slew rate for 20 kbit/s baud rate  
Slew rate for 10 kbit/s baud rate  
Slew rate for fast baud rate  
Slew rate for fast baud rate  
LIN2 J2602  
LIN2 remain recessive  
LIN2 operate below 6.0 V  
1
Table 55. SG wake-up enable  
MOSI bits [31-24]  
MOSI bits 23-0  
[b_31 b_30] 00_1110  
bit 10  
bit 9  
bit 8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
bit 23-17  
bit 15-11  
SG5  
SG4  
SG3  
SG2  
1
SG1  
SG0  
00_ 1110  
Default state  
Unused  
0
Unused  
1
Unused Unused  
Unused Unused Unused  
Condition for default  
POR/Reset command  
Table 56. SG5-0 fast scan enable  
MOSI bits [31-24]  
MOSI bits 23-0  
[b_31 b_30] 00_1111  
bit 10  
bit 9  
bit 8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
bit 23-17  
bit 15-0  
SG5  
SG4  
SG3  
SG2  
0
SG1  
SG0  
00_ 1111  
Default state  
Unused  
0
Unused  
0
Unused Unused  
Unused Unused Unused  
Condition for default  
POR/Reset command  
Table 57. Individual bit description (SG5-0 fast scan enable)  
Bits  
Description  
SG5-0 (Default = 0)  
Use normal wake-up timing as defined in sleep state command.  
Enables fast wake-up at 1.0 ms polling independent of normal wake-up selected in sleep state command.  
b10,b7-4,b0  
0
1
Table 58. SG wake-up delay enable  
MOSI bits 23-0  
MOSI bits [31-24]  
[b_31 b_30] 01_0000  
bit 10  
bit 9  
bit 8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
bit 23-17  
bit 15-11  
SG5  
SG4  
SG3  
SG2  
0
SG1  
SG0  
01_ 0000  
Default state  
Unused  
0
Unused  
0
Unused Unused  
Unused Unused Unused  
Condition for default  
POR/Reset command  
33909  
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NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
Table 59. Individual bit description (wake-up delay enable)  
Bits  
Description  
Controls SG5 – SG0 to Enable/Disable Wake-up delay during sleep mode. (Default = 0)  
b10,b7-4,b0  
Disables wake-up delay for SGn from sleep mode (Device does not wake up with change of state on SGn).  
Enable wake-up delay for SGn from sleep mode (Device wakes up with change of state on SGn)  
0
1
Table 60. Wetting current register 0  
MOSI bits [31-24]  
MOSI bits 23-0  
bits 14-12  
[b_31 b_30] 01_0001  
bits 23-21  
bit 20-18  
bits 17-15  
bits 11-9  
bits 8-6  
bit 5-3  
bit 2-0  
01_ 0001  
Default state  
SG4  
110  
SG3  
110  
SG2  
110  
SG1  
110  
Unused  
Unused  
Unused  
Unused  
Unused  
Unused  
SG0  
110  
Condition for default  
POR/Reset command  
Table 61. Individual bit description (wetting current register 0)  
Bits  
Description  
Bit pattern for Wetting current level for input pins (Default = 110)  
Sets the Wetting current Off  
b[cba]  
000  
Sets the Wetting current level to 6.0 mA  
001  
Sets the Wetting current level to 8.0 mA  
010  
Sets the Wetting current level to 10 mA  
011  
Sets the Wetting current level to 12 mA  
100  
Sets the Wetting current level to 14 mA  
101  
Sets the Wetting current level to 16 mA  
110  
Sets the Wetting current level to 20 mA  
111  
Controls SG4 Wetting current setting. (Default = 110)  
Controls SG3 Wetting current setting. (Default = 110)  
Controls SG2 Wetting current setting. (Default = 110)  
Controls SG1 Wetting current setting. (Default = 110)  
Controls SG0 Wetting current setting. (Default = 110)  
b23-21  
b20-18  
b17-15  
b14-12  
b2-0  
Table 62. Wetting current register 1  
MOSI bits [31-24]  
MOSI bits 23-0  
bits 14-12  
[b_31 b_30] 01_0010  
bits 23-21  
bit 20-18  
bits 17-15  
bits 11-9  
bits 8-6  
bit 5-3  
bit 2-0  
01_ 0010  
Default state  
Unused  
Unused  
Unused  
Unused  
Unused  
Unused  
Unused  
Unused  
Unused  
Unused  
SG5  
110  
Unused  
Unused  
Unused  
Unused  
Condition for default  
POR/Reset command  
33909  
NXP Semiconductors  
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FUNCTIONAL DEVICE OPERATION  
Table 63. Individual bit description (wetting current register 1)  
Bits  
Description  
Bit pattern for Wetting current level for input pins (Default = 110)  
Sets the Wetting current to Off  
b[cba]  
000  
001  
010  
011  
100  
101  
110  
111  
b8-6  
Sets the Wetting current level to 6.0 mA  
Sets the Wetting current level to 8.0 mA  
Sets the Wetting current level to 10 mA  
Sets the Wetting current level to 12 mA  
Sets the Wetting current level to 14 mA  
Sets the Wetting current level to 16 mA  
Sets the Wetting current level to 20 mA  
Controls SG5 Wetting current setting. (Default = 110)  
Table 64. SG wetting current timer enable  
MOSI bits 23-0  
MOSI bits [31-24]  
[b_31 b_30] 01_0011  
bit 10  
bit 9  
bit 8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
bit 23-17  
bit 15-11  
SG5  
SG4  
SG3  
SG2  
1
SG1  
SG0  
01_ 0011  
Default state  
Unused  
0
Unused  
0
Unused Unused  
Unused Unused Unused  
Condition for default  
POR/Reset command  
Table 65. Individual bit description (wetting current timer enable)  
Bits  
Description  
Controls SG5-0 Wetting current timer enable. (Default = 1). This enables a 20 ms (nominal) timer turns off the Wetting  
current  
b10,b7-b4,b0  
Disables timer and results in the Wetting current to run continuously  
Enables timer to turn off Wetting current after 20 ms (nominal)  
0
1
Table 66. SG tristate  
MOSI bits 23-0  
MOSI bits [31-24]  
[b_31 b_30] 01_0100  
bit 10  
bit 9  
bit 8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
bit 23-17  
bit 15-11  
SG5  
SG4  
SG3  
SG2  
1
SG1  
SG0  
01_ 0100  
Default state  
Unused  
0
Unused  
0
Unused Unused  
Unused Unused Unused  
Condition for default  
POR/Reset command  
Table 67. Individual bit description (Tristate)  
Bits  
Description  
Set SG5-0 to tri-state (Default = 1)  
Sets input to active mode.  
Sets input to tristate (Hi Z) mode.  
b10,b7-b4,b0  
0
1
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FUNCTIONAL DEVICE OPERATION  
4.3.3  
Device flags registers  
Table 68. Device flags - MISC  
MOSI  
MISO bits 8-0  
MOSI bits [31-24]  
bits 23-  
10 00_1001  
10  
bit 9  
bit 8  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
WD INT at  
Unused 50% Flash  
mode  
FSM  
State  
(bit4)  
FSM  
State  
(bit3)  
FSM  
State  
(bit1)  
FSM  
State  
(bit0)  
SAFE_B  
Activated  
FSM State  
(bit2)  
WDI  
WDI pin  
WDI pin  
10 00_1001  
mode status (bit 1) status (bit 0)  
Default state  
0
0
0
0
0
0
1
0
0
0
0
Condition for default  
POR  
Table 69. Individual bit description - MISC  
Bits  
Description  
Unused  
b23-10  
WD INT at 50% Flash mode  
Description  
b9  
Watchdog interrupt pulse generation at 50% of the watchdog period in Flash mode  
Set: Time elapsed to 50% of watchdog timer in Flash mode. Reset: Flag read (SPI)  
Note: Flag resets only after exiting Flash mode and then SPI flag read.  
Set/Reset condition  
SAFE_B activated  
Description  
SAFE_B pin activated for any reason  
b8  
Set/Reset condition  
FSM State (Bit 4,3,2,1,0)  
Description  
Set: Safe mode activated. Reset: POR or SPI read  
b7, b6, b5,  
b4, b3  
Determine what state the device is in (see Table 70 for description)  
Set/Reset condition  
WDI Mode  
Set: Determined by state of IC. Reset: POR  
Description  
In watchdog inhibit mode  
b2  
Set/Reset condition  
WDI pin status (BIT1,0)  
Description  
Set: Voltage at WDI greater then threshold. Reset: Voltage lowered below threshold or POR  
WDI pin in Safe mode A [00], B1 [01], B2 [10], B3 [11]  
Set: WDI set during INIT Reset. Reset: POR.  
b1, b0  
Set/Reset condition  
Table 70. FSM state  
Bits  
Description  
State  
b7, b6, b5, b4, b3  
00000  
INIT  
Normal Request  
Normal  
Flash  
00010  
00011  
00001  
Low-power VDD ON – xxx = SPI Mode command bits 6:3 (forced wake-up, periodic interrupt, watchdog)  
10000  
33909  
NXP Semiconductors  
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FUNCTIONAL DEVICE OPERATION  
Table 71. Device flags - regulators  
MOSI  
MISO bits 7-0  
bit 4 bit 3  
CAN5V CAN5Voverc VBATP  
MOSI bits [31-24]  
bits 23-  
10 00_1010  
20  
bit 7  
bit 6  
bit 5  
bit 2  
bit 1  
bit 0  
CAN5V  
Thermal  
shutdown  
VAUX  
Undervoltage  
VAUX  
overcurrent  
VBATP  
VBATP  
10 00_1010  
Unused  
0
UV  
urrent  
batfail  
Undervoltage Overvoltage  
Default state  
0
0
0
0
0
0
0
0
Condition for default  
POR  
Table 72. Device flags - regulators  
MOSI  
MOSI bits [31-24]  
bits 23-  
MISO bits 15-8  
10 00_1010  
bit 15  
bit 14  
bit 13  
bit 12  
bit 11  
bit 10  
bit 9  
bit 8  
20  
IDD  
Overcurrent  
Boosted Low-power  
IDD  
VDD  
VDD  
VPRE  
Thermal  
Shutdown  
VDD  
Overvoltage  
VAUX  
Overvoltage  
VPRE  
Overcurrent  
NORMAL  
mode  
10 00_1010  
Unused  
0
Undervolta Undervoltage>  
ge  
0
100 ms  
0
V
DD On mode  
Default state  
0
0
0
0
0
0
Condition for default  
POR  
Table 73. Device flags - regulators  
MISO bits 19-16  
bit 17  
MOSI bits [31-24]  
10 00_1010  
MOSI bits  
23-20  
bit 19  
bit 18  
bit 16  
10 00_1010  
Default state  
Unused  
0
VPRE IPFF  
0
VPRE Overcurrent  
0
VPRE Overvoltage  
VPRE Undervoltage  
0
0
Condition for default  
POR  
Table 74. Individual bit description - regulators  
Bits  
Description  
Unused  
b23-8  
VPRE IPFF  
Description  
Report VPRE IPFF  
b19  
Set/Reset condition  
VPRE Overcurrent  
Description  
Set: VPRE IPFF. Reset: VPRE out of IPFF and flag read (SPI)  
Reports current out of VPRE is higher than the IPRE-OC threshold.  
b18  
b17  
b16  
Set/Reset condition  
VPRE Overvoltage  
Description  
Set: current above threshold for t > 100 μs typ. Reset; current below threshold and flag read (SPI)  
Reports when VPRE was above overvoltage threshold  
Set/Reset condition  
VPRE Undervoltage  
Description  
Set: VPRE was above OV threshold. Reset: VPRE below OV and flag read (SPI)  
Reports when VPRE is below undervoltage threshold  
Set/Reset condition  
Set: VPRE below threshold for t > 100 μs typ. Reset: VPRE above threshold and flag read (SPI)  
33909  
77  
NXP Semiconductors  
FUNCTIONAL DEVICE OPERATION  
Table 74. Individual bit description - regulators (continued)  
Bits  
Description  
VPRE Thermal Shutdown  
Description  
Reports the VPRE has reached overtemperature threshold, and was turned off.  
Set: VPRE OFF due to thermal condition. Reset: VPRE recover and flag read (SPI)  
b15  
b14  
Set/Reset condition  
VPRE_Boosted  
Description  
Reports VPRE boost circuit activated  
Set/Reset condition  
Set: VPRE boost activated. Reset: VPRE out of boost mode and flag read (SPI)  
IDD Overcurrent Low-power VDD  
On mode  
Reports current out of VDD pin is higher than the IDD-OC threshold LP, while device is in Low-power VDD  
ON mode.  
b13  
Description  
Set/Reset condition  
IDD Overcurrent NORMAL mode  
Description  
Set: current above threshold for t > 100 μs typ. Reset; current below threshold and flag read (SPI)  
Reports current out of VDD pin is higher than IDD-OC threshold, while device is in Normal mode.  
b12  
b11  
Set/Reset condition  
VDD Overvoltage  
Description  
Set: current above threshold for t > 100 μs typ. Reset; current below threshold and flag read (SPI)  
Reports VDD pin is higher than the typ VDD + 0.6 V threshold (27)  
Set/Reset condition  
VDD low interrupt  
Set: VDD above threshold for t >100 μs typ. Reset: VDD below threshold and flag read (SPI)  
Reports VDD output voltage is lower than the VDD_UV threshold and causing an Interrupt, based on the  
VDDLRST[1:0] bits set in the INIT register. This flag only sets if the setup in INIT is set to cause an Interrupt  
on an undervoltage.  
Description  
b10  
Set/Reset condition  
VDD low >100 ms  
Description  
Set: VDD below threshold for t > 100 μs typ. Reset: VDD above threshold and flag read (SPI)  
Reports VDD pin is lower than the VDDUV threshold for a time longer than 100 ms (27)  
Set: VDD below threshold for t > 100 ms typ. Reset: VDD above threshold and flag read (SPI)  
b9  
b8  
Set/Reset condition  
VAUX Overvoltage  
Description  
Reports VAUX pin is higher than the typ VAUX + 0.6 V threshold.  
Set/Reset condition  
VAUX Under voltage  
Set: VAUX above threshold for t > 100 μs typ. Reset: VAUX below threshold and flag read (SPI)  
Reports VAUX regulator output voltage is lower than the VAUX_UV threshold. The VAUX undervoltage flag  
typically occurs in conjunction with the VAUX overcurrent flag, due to the functional cause.  
Description  
b7  
Set/Reset condition  
VAUX_OVERCURRENT  
Description  
Set: VAUX below threshold for t > 100 μs typ. Reset: VAUX above threshold and flag read (SPI)  
Report current out of VAUX regulator is above VAUX_OC threshold.  
b6  
b5  
b4  
Set/Reset condition  
CAN5V Thermal shutdown  
Description  
Set: Current above threshold for t > 100 μs. Reset: Current below threshold and flag read by SPI.  
Report the CAN5V regulator has reached overtemperature threshold.  
Set/Reset condition  
CAN5V UV  
Set: CAN5V thermal sensor above threshold. Reset: thermal sensor below threshold and flag read (SPI)  
Description  
Reports CAN5V regulator output voltage is lower than the CAN5V UV threshold.  
Set/Reset condition  
Set: CAN5V below CAN5V UV for t > 100 μs typ. Reset: CAN5V > threshold and flag read (SPI)  
33909  
NXP Semiconductors  
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FUNCTIONAL DEVICE OPERATION  
Table 74. Individual bit description - regulators (continued)  
Bits  
Description  
CAN5V overcurrent  
Description  
Report the CAN driver output current is above threshold.  
b3  
Set: CAN5V current above threshold for t > 100 μs. Reset: CAN5V current below threshold and flag read  
(SPI)  
Set/Reset condition  
VBATP batfail  
Description  
Report the device voltage at VBATP pin was below BATFAIL threshold.  
b2  
b1  
Set/Reset condition  
VBATP_underVOLTAGE  
Description  
Set: VBATP below BATFAIL. Reset: VBATP above threshold, and flag read (SPI)  
Reports VBATP pin is lower than the VBATP low resoled.  
Set/Reset condition  
VBATP Overvoltage  
Description  
Set: VBATP below threshold for t > 100 μs typ. Reset: VBATP above threshold and flag read (SPI)  
Report VBATP was above overvoltage threshold  
b0  
Set/Reset condition  
Set: VBATP was above OV threshold. Reset: VBATP below OV and flag read (SPI)  
Notes  
27. When a VDD overvoltage condition occurs, the flag register for VDD undervoltage > 100 ms is also set. This was done to logically enable a SAFE  
condition when the over voltage occurs.  
Table 75. Device flags – CAN  
MOSI  
bits 22-  
17  
MISO bits 7-0  
MOSI bits [31-24] MOSI bit 23  
10 00_1011  
Select bit  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
CAN  
wake-up  
CAN  
Overtemp  
Bus Dom  
clamp  
CAN  
Overcurrent  
10 00_1011  
0
Unused  
0
-
RxD low  
RxD high  
0
TxD dom  
0
Default state  
0
0
0
0
0
0
Condition for default  
POR  
Table 76. Device flags – CAN  
MISO bits 7-0  
MOSI bits [31-24] MOSI bit 23 MOSI bits  
10 00_1011  
Select bit  
22-16  
bit 15  
bit 14  
bit 13  
bit 12  
bit 11  
bit 10  
bit 9  
bit 8  
CANL to  
VBAT  
CANL to  
GND  
CANH to  
VBAT  
CANH to  
GND  
10 00_1011  
0
Unused  
0
CAN_UF  
0
CAN_F  
0
Unused  
Unused  
0
Default state  
0
0
0
0
0
Condition for default  
POR  
Table 77. Individual bit description – CAN  
Bits  
Description  
CAN_UF  
Description  
Report the CAN failure detection has not yet identified the bus failure  
b15  
b14  
Set/Reset condition  
CAN_F  
Set: bus failure pre detection. Reset: CAN bus failure recovered and flag read  
Description  
Report the CAN failure detection has identified the bus failure  
Set/Reset condition  
Set: bus failure complete detetction.Reset: CAN bus failure recovered and flag read  
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Table 77. Individual bit description – CAN (continued)  
Bits  
Description  
CANL to VBAT  
Description  
Report CAN L short to VBAT failure  
b13  
b11  
b10  
b8  
Set/Reset condition  
CANL to GND  
Description  
Set: failure detected. Reset failure recovered and flag read (SPI)  
Report CAN L short to GND failure  
Set/Reset condition  
CANH to VBAT  
Description  
Set: failure detected. Reset failure recovered and flag read (SPI)  
Report CAN H short to VBAT failure  
Set/Reset condition  
CANH to GND  
Description  
Set: failure detected. Reset failure recovered and flag read (SPI)  
Reports CAN H short to VBATP failure  
Set/Reset condition  
CAN wake-up  
Description  
Set: failure detected. Reset failure recovered and flag read (SPI)  
Reports the wake-up source is CAN  
b7  
Set/Reset condition  
CAN Overtemp  
Description  
Set: after CAN wake detected. Reset: Flag read (SPI)  
Reports the CAN interface has reach overtemperature threshold.  
b5  
Set/Reset condition  
RxD low  
Set: CAN thermal sensor above threshold. Reset: thermal sensor below threshold and flag read (SPI)  
Description  
Reports the Rx pin is shorted to GND.  
b4  
Set/Reset condition  
RxD high  
Set: Rx low failure detected. Reset: failure recovered and flag read (SPI)  
Description  
Reports the Rx pin is shorted to recessive voltage.  
b3  
Set/Reset condition  
TxD dom  
Set: Rx high failure detected. Reset: failure recovered and flag read (SPI)  
Description  
Reports the Tx pin is shorted to GND  
b2  
Set/Reset condition  
Bus Dom clamp  
Description  
Set: Tx low failure detected. Reset: failure recovered and flag read (SPI)  
Reports the CAN bus is dominant for a time longer than tDOM  
b1  
Set/Reset condition  
CAN Overcurrent  
Description  
Set: Bus dominant clamp failure detected. Reset: failure recovered and flag read (SPI)  
Reports the CAN current is above CAN overcurrent threshold.  
b0  
Set/Reset condition  
Set: CAN current above threshold. Reset: current below threshold and flag read (SPI)  
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Table 78. Device flags – interrupt  
MOSI bits [31-24] MOSIbits  
MISO bits 7-0  
bit 3  
10 00_1000  
23-16  
bit 7  
bit 6  
bit 5  
bit 4  
bit 2  
bit 1  
bit 0  
SAFE SPI  
resistor  
mismatch  
Reset  
request  
RESET Low <  
100 ms  
VPRE thermal  
warning  
10 00_1000  
Unused INT request RST high  
Unused Unused  
Default state  
0
0
0
0
0
0
0
0
0
Condition for default  
POR  
Table 79. Device flags – interrupt  
MOSI bits [31-24] MOSIbits  
MISO bits 15-8  
10 00_1000  
23-16  
bit 15  
bit 14  
bit 13  
bit 12  
bit 11  
bit 10  
bit 9  
bit 8  
INT service  
Timeout  
VDD low  
RST  
RST low >  
100 ms  
multiple  
Resets  
W/D refresh  
failure  
10 00_1000  
Unused  
0
FWU  
0
SPI Wake-up Unused  
Default state  
0
0
0
0
0
0
0
Condition for default  
POR  
Table 80. Individual bit description – interrupt  
Bits  
Description  
INT service Timeout  
Reports the INT timeout error detected. An interrupt occurrence stays asserted for more than three watchdog  
periods without ever being cleared.  
Description  
b15  
Set/Reset condition  
FWU  
Set: INT service timeout expired and WD2INT set. Reset: flag read and original INT cleared.  
Description  
Reports the wake-up source is Forced Wake-up  
b14  
b13  
Set/Reset condition  
SPI Wake-up  
Description  
Set: after Forced Wake-up detected. Reset: Flag read (SPI)  
Reports the wake-up source is SPI command, in Low-power VDD on.  
Set: after SPI Wake-up detected. Reset: Flag read (SPI)  
Set/Reset condition  
VDD low RST  
Reports VDD is below the VDD undervoltage threshold and causes a RESET, based on the VDDLRST [1:0] bits  
set in the INIT register.  
Description  
b11  
Set/Reset condition  
RST low > 100ms  
Description  
Set: VDD below threshold. Reset: flag read (SPI)  
Reports the Reset pin has detected a low level, longer than 100 ms (Reset permanent low)  
Set: after detection of reset low pulse. Reset: Reset pulse terminated and flag read (SPI)  
b10  
b9  
Set/Reset condition  
Multiple Resets  
Description  
Reports the more than 8 consecutive reset pulses occurred, due to missing or wrong W/D refresh.  
Set: after detection of multiple reset pulses. Reset: flag read (SPI)  
Set/Reset condition  
W/D refresh failure  
Description  
Reports a wrong or missing W/D failure occurred  
Set: Failure detected. Reset: flag read (SPI)  
b8  
Set/Reset condition  
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Table 80. Individual bit description – interrupt (continued)  
Bits  
Description  
INT request  
Description  
Reports the INT source is an INT request from a SPI command.  
Set: INT occurred. Reset: flag read (SPI)  
b7  
b6  
b5  
b2  
Set/Reset condition  
RST high  
Description  
Reports the RST_B pin is shorted to high voltage.  
Set: RST failure detection. Reset: flag read.  
Set/Reset condition  
Reset Request  
Description  
Reports the RST source is an request from a SPI command (go to RST mode).  
Set: After reset occurred due to SPI request. Reset: flag read (SPI)  
Set/Reset condition  
RESET Low < 100 ms  
Description  
Reports the Reset pin has detected a low level, shorter than 100 ms  
Set/Reset condition  
Set: after detection of reset low pulse. Reset: Reset pulse terminated and flag read (SPI)  
SAFE SPI resistor  
mismatch  
b1  
b0  
Description  
Reports the SPI word setting the state of SAFE (A, B1, B2, B3) does not match the resistor value set at startup  
Set: after SPI command to set SAFE mode and if it does not match. Reset: POR or matching SPI word sent.  
Set/Reset condition  
VPRE thermal warning  
Description  
Reports the VPRE thermal warning temperature has been reached  
Set/Reset condition  
Set: after VPRE thermal warning: Reset Temperature falls below thermal warning limit and SPI read.  
Table 81. Device flags – LIN01  
MOSI bits [31-24] MOSI bits  
MISO bits 7-0  
10 00_1100  
23-16  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
LIN0 wake-  
up  
LIN 0  
Overtemp  
LIN0 bus dom  
clamp  
10 00_1100  
Unused  
0
Unused  
0
Unused  
0
RxD0 low  
0
RxD0 high  
0
TxD0 dom  
0
Default state  
0
0
0
Condition for default  
POR  
Table 82. Device flags – LIN01  
MISO bits 7-0  
MOSI bits [31-24]  
10 00_1100  
MOSI bits  
23-16  
bit 15  
bit 14  
bit 13  
bit 12  
bit 11  
bit 10  
bit 9  
bit 8  
LIN  
1Overtemp  
LIN1 bus dom  
clamp  
10 00_1100  
Unused  
0
Unused LIN1wake-up  
Unused  
0
RxD1 low  
0
RxD1 high TxD1 dom  
Default state  
0
0
0
0
0
0
Condition for default  
POR  
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Table 83. Individual bit description – LIN01  
Bits  
Description  
LIN1 wake-up  
Description  
Reports the wake-up source is LIN1  
b14  
b12  
b11  
b10  
b9  
Set/Reset condition  
LIN 1 Overtemp  
Description  
Set: after CAN wake detected. Reset: Flag read (SPI)  
Reports the LIN1 interface has reach overtemperature threshold.  
Set/Reset condition  
RxD1 low  
Set: CAN thermal sensor above threshold. Reset: thermal sensor below threshold and flag read (SPI)  
Description  
Reports the RxDL pin is shorted to GND.  
Set/Reset condition  
RxD1 high  
Set: Rx low failure detected. Reset: failure recovered and flag read (SPI)  
Description  
Reports the RxDL pin is shorted to recessive voltage.  
Set/Reset condition  
TxD1 dom  
Set: Rx high failure detected. Reset: failure recovered and flag read (SPI)  
Description  
Reports the TxDL pin is shorted to GND.  
Set/Reset condition  
LIN1 busdom clamp  
Description  
Set: Tx low failure detected. Reset: failure recovered and flag read (SPI)  
Reports the LIN1 bus is dominant for a time longer than t  
DOM  
b8  
Set/Reset condition  
LIN0 wake-up  
Description  
Set: Bus dominant clamp failure detected. Reset: failure recovered and flag read (SPI)  
Reports the wake-up source is LIN0  
b6  
Set/Reset condition  
LIN 0 Overtemp  
Description  
Set: after CAN wake detected. Reset: Flag read (SPI)  
Reports the LIN0 interface has reach overtemperature threshold.  
b4  
Set/Reset condition  
RxD0 low  
Set: CAN thermal sensor above threshold. Reset: thermal sensor below threshold and flag read (SPI)  
Description  
Reports the RxDL pin is shorted to GND.  
b3  
Set/Reset condition  
RxD0 high  
Set: Rx low failure detected. Reset: failure recovered and flag read (SPI)  
Description  
Reports the RxDL pin is shorted to recessive voltage.  
b2  
Set/Reset condition  
TxD0 dom  
Set: Rx high failure detected. Reset: failure recovered and flag read (SPI)  
Description  
Reports the TxDL pin is shorted to GND.  
b1  
Set/Reset condition  
LIN0 busdom clamp  
Description  
Set: Tx low failure detected. Reset: failure recovered and flag read (SPI)  
Reports the LIN0 bus is dominant for a time longer than tDOM  
b0  
Set/Reset condition  
Set: Bus dominant clamp failure detected. Reset: failure recovered and flag read (SPI)  
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Table 84. Device flags – LIN23  
MISO bits 7-0  
MOSI bits [31-24]  
10 00_1101  
MOSI bits  
23-16  
bit 7  
bit 6  
bit 5  
bit 4  
bit 3  
bit 2  
bit 1  
bit 0  
LIN2 wake-  
up  
LIN 2  
Overtemp  
LIN2 busdom  
clamp  
10 00_1101  
Unused  
0
Unused  
0
Unused  
0
RxD2 low  
0
RxD2 high TxD2 dom  
Default state  
0
0
0
0
0
Condition for default  
POR  
Table 85. Device flags – LIN23  
MISO bits 7-0  
MOSI bits [31-24]  
10 00_1101  
MOSI bits  
23-16  
bit 15  
bit 14  
bit 13  
bit 12  
bit 11  
bit 10  
bit 9  
bit 8  
LIN3 wake-  
up  
LIN 3  
Overtemp  
LIN3 busdom  
clamp  
10 00_1101  
Unused  
0
Unused  
0
Unused  
0
RxD3 low  
0
RxD3 high TxD3 dom  
Default state  
0
0
0
0
0
Condition for default  
POR  
Table 86. Individual bit description – LIN23  
Bits  
Description  
LIN3 wake-up  
Description  
Reports the wake-up source is LIN3  
b14  
b12  
b11  
b10  
b9  
Set/Reset condition  
LIN 3 Overtemp  
Description  
Set: after CAN wake detected. Reset: Flag read (SPI)  
Reports the LIN3 interface has reach overtemperature threshold.  
Set/Reset condition  
RxD3 low  
Set: CAN thermal sensor above threshold. Reset: thermal sensor below threshold and flag read (SPI)  
Description  
Reports the RxDL pin is shorted to GND.  
Set/Reset condition  
RxD3 high  
Set: Rx low failure detected. Reset: failure recovered and flag read (SPI)  
Description  
Reports the RxDL pin is shorted to recessive voltage.  
Set/Reset condition  
TxD3 dom  
Set: Rx high failure detected. Reset: failure recovered and flag read (SPI)  
Description  
Reports the TxDL pin is shorted to GND.  
Set/Reset condition  
LIN3 busdom clamp  
Description  
Set: Tx low failure detected. Reset: failure recovered and flag read (SPI)  
Reports the LINx bus is dominant for a time longer than tDOM  
b8  
Set/Reset condition  
LIN2 wake-up  
Description  
Set: Bus dominant clamp failure detected. Reset: failure recovered and flag read (SPI)  
Reports the wake-up source is LIN2  
b6  
Set/Reset condition  
LIN 2 Overtemp  
Description  
Set: after CAN wake detected. Reset: Flag read (SPI)  
Reports the LIN2 interface has reach overtemperature threshold.  
b4  
Set/Reset condition  
Set: CAN thermal sensor above threshold. Reset: thermal sensor below threshold and flag read (SPI)  
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Table 86. Individual bit description – LIN23 (continued)  
Bits  
Description  
RxD2 low  
Description  
Reports the RxDL pin is shorted to GND.  
b3  
b2  
b1  
Set/Reset condition  
RxD2 high  
Set: Rx low failure detected. Reset: failure recovered and flag read (SPI)  
Description  
Reports the RxDL pin is shorted to recessive voltage.  
Set/Reset condition  
TxD2 dom  
Set: Rx high failure detected. Reset: failure recovered and flag read (SPI)  
Description  
Reports the TxDL pin is shorted to GND.  
Set/Reset condition  
LIN2 busdom clamp  
Description  
Set: Tx low failure detected. Reset: failure recovered and flag read (SPI)  
Reports the LINx bus is dominant for a time longer than tDOM  
b0  
Set/Reset condition  
Set: Bus dominant clamp failure detected. Reset: failure recovered and flag read (SPI)  
4.3.3.1  
Abnormal operation (as applicable to each specific ASIC)  
The 33909 is subject to various conditions considered abnormal as defined within this section.  
4.3.3.1.1  
Jump start  
Complete functionality is guaranteed for a battery voltage of 26.5 V (or other application specific value) up to T 50 °C for at least two  
A
minutes. A complete characterization is completed at this voltage and temperature. Performance at two minutes is guaranteed by bench  
characterization. No internal faults is set or abnormal operation noted as a result of operating in this range.  
4.3.3.1.2  
Load dump  
The device must be capable of withstanding a typical load dump transient voltage of 40 V (or other application specific value) over the  
entire specified operating temperature range. Full parametric conformance is not required, Functionality up to overvoltage shutdown is  
guaranteed as well as up to the thermal capability of the package and external components with the exception of internal diagnostics,  
which are not required. No internal faults are set as a result of operating in this range.  
4.3.3.1.3  
Low-voltage operation  
The low-voltage operating range is the application specific voltage range where full parametric conformance is not required of the device.  
However, all functions remain in stable operation and return to their proper behavior upon return to the normal operation voltage range.  
4.3.3.1.4  
Undervoltage lockout  
This undervoltage lockout voltage range is dependent upon the silicon technology and the design, but is defined as the voltage range  
where all applicable output drivers are maintained in their OFF state. This range is intended to define the voltages at which the device is  
not capable of meeting internal threshold requirements to guarantee functionality. While in undervoltage lockout, the driver outputs are  
not be allowed to 'float' and inadvertently turn an output ON.  
4.3.3.1.5  
Reverse battery  
This device with applicable external components is not damaged by exposure to reverse battery conditions of -14 V (or other application  
specific values). This test is performed for a period of one minute at 25 °C. In addition, this negative voltage condition does not force any  
of the logic level I/O pins to a negative voltage less than -0.6 V at 10 mA, or to a positive voltage greater the 5.0 V DC. This insures  
protection of the digital device interfacing with this device.  
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4.3.3.1.6  
Ground offset  
The applicable driver outputs and/or current sense inputs are capable of operation with a ground offset of 2.0 V DC. The device is not  
damaged by exposure to this condition and maintains specified functionality.  
4.3.3.1.7  
Shorts to ground  
All I/O's of the device are available at the module connector and are protected against shorts to ground with maximum ground offset  
considered (i.e. -2.0 V referenced to device ground or other application specific value). The device is not be damaged by this condition.  
4.3.3.1.8  
Shorts to battery  
All I/O's of the device are available at the module connector and are protected against a short to battery (voltage value is application  
dependent, there may be cases where short to jump start or load dump voltage values are required). The device is not damaged by this  
condition.  
4.3.3.1.9  
Unpowered shorts to battery  
All I/O's of the device are available at the module connector and are protected against unpowered (battery to the module is open) shorts  
to battery per application specifics. The device is not damaged by this condition, does not enable any outputs, and does not back feed  
onto the power rails (i.e, VBATP, VDD) or the digital I/O pins.  
4.3.3.1.10 Loss of module ground  
The definition of a loss of ground condition at the device level is, all pins of the IC see very low-impedance to battery. The nomenclature  
is suited to a test environment. In the application, a loss of ground condition results in all I/O pins floating to battery voltage, while all  
externally referenced I/O pins are at worst case pulled to ground. All applicable driver outputs and current sense inputs are protected  
against excessive leakage current due to loads are referenced to an external ground (i.e, high-side drivers).  
4.3.3.1.11 Loss of module battery  
The loss of battery condition at the parts level is, the power input pins of the IC see infinite impedance to the battery supply voltage  
(depending upon the application), but there is some undefined impedance looking from these pins to ground. All applicable driver outputs  
and current sense inputs are protected against excessive leakage current due to loads are referenced to an external battery connection  
(i.e., low-side drivers).  
4.3.3.1.12 Stress tests (as applicable to each specific ASIC)  
Each of the outputs must have a series of stress tests performed on 100% of the parts shipped. Experience has shown failure to  
incorporate these tests results in field and plant failures. The following is a list of the tests required and a brief description of each test. In  
general, for all of the following tests a significant number of parts must be tested to failure for the parameter in question so a statistically  
valid destruction level can be found. After this level is determined for each of the following parameters, a level for a production test is  
determined. This level must not be so high as to damage a normal part, but it must fail parts which do not fit in the normal process window.  
Note: In all cases, the stress test must be performed to the level found during the previous part characterization and is not be tested to  
the specification level. Even if the part meets this specification, but the parameter in question does not fall within the proper statistical  
window, the part must be rejected. The only way a part can be considered good if it does not fall within the normal statistical window is if  
an exact root cause analysis is performed and a detailed explanation is given, along with an assessment of risk. Any stress test limits  
arrived at must at least meet the minimum requirements listed in this specification or the test has no validity.  
4.3.3.1.13 Gate stress tests (as applicable to large power MOSFET drivers)  
The gate stress test helps to test out random manufacturing defects within the gate oxide of the MOSFET. An initial gate-to-source leakage  
test is performed with as high a voltage as possible without causing significant leakage of the Gate-to-source zener clamp. The leakage  
is measured and recorded. Now a higher voltage (18 Volts, process and design related.) is applied to the gate of the MOSFET for a short  
period of time. The leakage is again tested at the lower voltage and recorded. If the leakage is above an absolute value, or if possible  
above a delta increase, the part is bad and must be rejected.  
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4.3.3.1.14 BV  
test (as applicable to power output drivers)  
DSS  
The purpose of this test is to ensure there is adequate headroom between the breakdown of the MOSFET output and the maximum clamp  
voltage. Provisions need to be made to be able to defeat the drain-to-gate clamp diode so that the BV value can be measured. It is  
DSS  
also acceptable if the exact value is not found, but that a minimum guard band is tested to. A guard band of 5.0 to 10 V would be typical.  
4.3.3.1.15 Elevated supply voltage stress  
The purpose of this test is to find weak devices might fail if an unusual transient was seen. An elevated voltage of 40 Volts (Process  
dependent) is applied to the VBATP pin.  
4.3.3.1.16 IDDQ stress test  
The purpose of this test is to identify defects (shorted or leaky devices) which cannot be detected by conventional functional testing. IDDQ  
testing is required to be done separately for digital and analog circuit blocks. Test definition is per AEC Q100-007.  
4.3.3.1.17 SCAN testing  
The purpose of this test is to identify defects (shorted or leaky devices) which cannot be detected by conventional functional testing. IDDQ  
testing is required to be done separately for digital and analog circuit blocks. Test definition is per AEC Q100-007.  
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TYPICAL APPLICATIONS  
5
Typical applications  
The 33909 System basis chip is a highly integrated system basis chip with switch to ground input detection inputs. The 33909 was  
designed to supply microprocessors and module power along with many of the most commonly needed functions in body modules.  
L2  
C26  
R25  
D3  
VAUX  
U2  
D2  
C19  
U1  
C20  
CBOOT  
VAUXB VAUX  
VAUXE  
VPRE  
VSW VPREGATE  
R16  
VBAT  
BOOT  
C27 VBAT_SMPS  
VDDE  
L1  
U3  
VDDB  
VDD  
CPI1 CPI2  
PI Filter  
C17  
D1  
VDD  
C21  
C25  
SAFE_B  
AMUX  
VBATP  
VBATSNS  
WDI  
C18  
RVBATSNS  
RST_B  
INT_B  
RWDI  
33909  
MOSI  
MISO  
SCLK  
CS_B  
SG0  
SG1  
SG2  
SG3  
SG4  
SG5  
C0  
C1  
C2  
C3  
C4  
C5  
R0  
R1  
R2  
R3  
R4  
R5  
SPI  
RXD_L0  
TXD_L0  
MCU  
RXD_L1  
TXD_L1  
RXD_L2  
TXD_L2  
CANH  
CANL  
R22  
CAN Bus  
RXD_L3  
TXD_L3  
R21  
RXD_C  
TXD_C  
VBATP  
D7  
D6  
R19  
R20  
LIN_0  
LIN_1  
D5  
R18  
LIN Bus  
D4  
R17  
LIN Bus  
CAN5V  
C22  
LIN_2  
LIN_3  
LIN Bus  
LIN Bus  
GND  
GND  
CANGND  
Figure 36. 33909AD typical application diagram  
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PACKAGING  
6
Packaging  
6.1  
Package dimensions  
Package dimensions are provided in package drawings. To find the most current package outline drawing, go to www.freescale.com and  
perform a keyword search for the drawing’s document number.  
Table 87.  
Package  
Suffix  
Package outline drawing number  
98ASA00737D  
48-Pin LQFP  
AD  
33909  
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PACKAGING  
33909  
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90  
PACKAGING  
.
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PACKAGING  
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REVISION HISTORY  
7
Revision history  
Revision  
Date  
Description of changes  
Initial Release  
1.0  
10/2013  
1/2015  
Removed 64-pin version  
Major update  
2.0  
3.0  
Added DC/DC to device description.  
Updated Electrical Characteristics tables for ILOAD_BUCK, VDD Undervoltage, SPI VIH/VIL specs.  
Updated text to match current device.  
3/2015  
Updated SPI tables to remove unused bits.  
Changed device status in Orderable parts from PC to MC.  
4/2015  
7/2015  
Added SG Low-power Mode Timing Diagram  
Corrected TXD pin timing in Table 9  
4.0  
Added missing Interrupt table to Dynamic electrical characteristics  
Updated to NXP document form and style  
8/2016  
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Information in this document is provided solely to enable system and software implementers to use NXP products.  
There are no expressed or implied copyright licenses granted hereunder to design or fabricate any integrated circuits  
based on the information in this document. NXP reserves the right to make changes without further notice to any  
products herein.  
How to Reach Us:  
Home Page:  
NXP.com  
Web Support:  
http://www.nxp.com/support  
NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular  
purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation, consequential or incidental damages. "Typical"  
parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications,  
and actual performance may vary over time. All operating parameters, including "typicals," must be validated for each  
customer application by the customer's technical experts. NXP does not convey any license under its patent rights nor  
the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the  
following address:  
http://www.nxp.com/terms-of-use.html.  
NXP, the NXP logo, Freescale, the Freescale logo and SMARTMOS are trademarks of NXP B.V. All other product or  
service names are the property of their respective owners. All rights reserved.  
© 2016 NXP B.V.  
Document Number: MC33909  
Rev. 4.0  
8/2016  

相关型号:

MC33909Q5AD

System Basis Chip, 1 CAN, 4 LIN, 6 MSDI, 2A DC/DC, LV124, 5V/500mA LDO, LQFP-EP 48, Tray
NXP

MC33910

LIN System Basis Chip with High Side Drivers
FREESCALE

MC33910BAC

LIN System Basis Chip with 2x60mA High Side Drivers
FREESCALE

MC33910BACR2

LIN System Basis Chip with 2x60mA High Side Drivers
FREESCALE

MC33910G5AC

LIN System Basis Chip with High
FREESCALE

MC33910G5AC

0.11A BUF OR INV BASED PRPHL DRVR, PQFP32, 7 X 7 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, MS-026BBA, LQFP-32
ROCHESTER

MC33910G5AC/R2

LIN System Basis Chip with High Side Drivers
FREESCALE

MC33911

LIN System Basis Chip with DC Motor Pre-driver
FREESCALE

MC33911BAC

LIN System Basis Chip with DC Motor Pre-driver
FREESCALE

MC33911BAC/R2

BUF OR INV BASED PRPHL DRVR
NXP

MC33911BACR2

LIN System Basis Chip with DC Motor Pre-driver
FREESCALE

MC33911BR2

LIN System Basis Chip with DC Motor Pre-driver
FREESCALE