MMG2001NT1_技术文档

Document Number: MMG2001NT1

Rev. 6, 3/2007

Freescale Semiconductor

Technical Data

Gallium Arsenide

CATV Integrated Amplifier Module

Features

MMG2001NT1

• Specified for 79-, 112- and 132-Channel Loading

• Excellent Distortion Performance

• Higher Output Capability

• Built-in Input Diode Protection

870 MHz

21 dB GAIN

132-CHANNEL

• GaAs FET Transistor Technology

• Unconditionally Stable Under All Load Conditions

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1,000 Units per 16 mm, 13 inch Reel.

Applications

CATV INTEGRATED AMPLIFIER

MODULE

• CATV Systems Operating in the 40 to 870 MHz Frequency Range

• Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk

Distribution Amplifiers for CATV Systems

• Driver Amplifier in Linear General Purpose Applications

16

Description

• 24 Vdc Supply, 40 to 870 MHz, CATV Integrated Forward Power Doubler

1

Amplifier Module

CASE 978-03

PFP-16

Table 1. Maximum Ratings

Rating

Symbol

Value

+70

Unit

dBmV

Vdc

°C

RF Voltage Input (Single Tone)

DC Supply Voltage

V

in

V

+26

CC

Operating Case Temperature Range

Storage Temperature Range

T

-20 to +100

-40 to +100

C

T

stg

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

R

θ

JC

4.7

°C/W

Pin 3

Pin 15

Pin 13

Pin 11

Q

3

NC

1

2

3

4

NC

16

V

15

14

13

12

11

D3

Q

1

NC

V

G1

Pin 4

Pin 5

Pin 6

R

G3

V

S1

GC

R

V

5

6

7

8

NC

V

S1

S2

C

V

S2

D4

NC

10

9

G2

NC

G4

(Top View)

Note: Exposed backside flag is source

terminal for transistors.

Q

2

Q

4

Pin 7

Figure 1. Functional Diagram

Figure 2. Pin Connections

MMG2001NT1

RF Device Data

Freescale Semiconductor

1

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (minimum)

M1 (minimum)

C5 (minimum)

Machine Model

Charge Device Model

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Table 5. Electrical Characteristics (V = 24 Vdc, T = +45°C, 75 Ω system unless otherwise noted)

CC

C

Characteristic

Symbol

Min

Typ

Max

Unit

MHz

dB

Frequency Range

Power Gain

BW

40

—

870

G

p

40 MHz

870 MHz

—

19

21

—

Slope

40 - 870 MHz

S

—

0.8

0.5

—

dB

Gain Flatness (40 - 870 MHz, Peak to Valley)

Input Return Loss (Z = 75 Ohms)

G

F

f = 40-160 MHz

f = 161-450 MHz

f = 451-870 MHz

IRL

—

21

19

22

—

o

Output Return Loss (Z = 75 Ohms)

f = 40-400 MHz

f = 401-870 MHz

ORL

—

22

17

—

dB

o

Composite Second Order

dBc

(V = +48 dBmV/ch., Worst Case)

132-Channel FLAT

112-Channel FLAT

79-Channel FLAT

CSO

—

-68

-70

-74

-63

-62

-61

-67

-72

-71

-60

-62

-66

—

out

132

112

79

(V = +48 dBmV/ch., Worst Case)

CSO

out

(V = +48 dBmV/ch., Worst Case)

out

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 12 dB Tilt

out

112

79

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 13.5 dB Tilt

out

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 17 dB Tilt

out

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 12 dB Tilt

out

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 13.5 dB Tilt

out

79

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 17 dB Tilt

out

79

Cross Modulation Distortion @ Ch 2

dBc

(V = +48 dBmV/ch., FM = 55 MHz) 132-Channel FLAT

XMD

—

-55

-57

-60

-51

-53

-56

-58

-60

-65

-53

-55

-58

—

out

132

112

79

(V = +48 dBmV/ch., FM = 55 MHz) 112-Channel FLAT

out

(V = +48 dBmV/ch., FM = 55 MHz) 79-Channel FLAT

out

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 12 dB Tilt

out

112

79

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 13.5 dB Tilt

out

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 17 dB Tilt

out

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 12 dB Tilt

out

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 13.5 dB Tilt

out

79

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 17 dB Tilt

out

79

Composite Triple Beat

dBc

(V = +48 dBmV/ch., Worst Case)

132-Channel FLAT

112-Channel FLAT

79-Channel FLAT

CTB

—

-56

-60

–66

-58

-59

-62

-64

-69

-72

-54

-58

–64

—

out

132

112

79

(V = +48 dBmV/ch., Worst Case)

out

(V = +48 dBmV/ch., Worst Case)

out

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 12 dB Tilt

out

112

79

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 13.5 dB Tilt

out

(V = +56 dBmV @ 870 MHz Equiv) 112-Channel, 17 dB Tilt

out

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 12 dB Tilt

out

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 13.5 dB Tilt

out

79

(V = +58 dBmV @ 870 MHz Equiv) 79-Channel, 17 dB Tilt

out

79

Noise Figure

50 MHz

NF

—

4.0

4.5

dB

550 MHz

750 MHz

870 MHz

DC Current (V = 24 V, T = 45°C)

I

DC

410

425

440

mA

DC

C

MMG2001NT1

RF Device Data

Freescale Semiconductor

2

C10

C7

R13

R9

Pin 15

Pin 13

Pin 11

Pin 3

Pin 4

C5

C6

R11

RF

OUTPUT

T2

T3

C3

C4

R15

R16

R17

D2

C9

D3

Pin 5

T1

RF

INPUT

Pin 6

Pin 7

C11

V

CC

R12

C1

R10

C8

R14

R1

R18

R2

R3

R7

R6

Q2

D1

Q1

R4

C2

R8

R5

Figure 3. MMG2001NT1 50-870 MHz Test Circuit Schematic

Table 6. MMG2001NT1 50-870 MHz Test Circuit Component Designations and Values

Designation

C1, C7, C8, C11

Description

220 pF Chip Capacitors

Part Number

C0603C221J5RAC

Manufacturer

Kemet

AVX

C2, C3, C4, C9, C10

0.01 mF Chip Capacitors

1.8 pF Chip Capacitors

C0603C103J5RAC

06035J1R8BS

C5, C6

D1

5.1 V Zener Diode

MM3Z5V1T1G

ON Semi

Vishay

None

D2

27 V Zener Diode

MM3Z27VT1G

D3

Transient Voltage Suppressor

Dual Transistors Package

2.2 kW, 1/4 W Chip Resistor

680 W, 1/10 W Chip Resistors

180 W, 1/10 W Chip Resistor

1600 W, 1/10 W Chip Resistor

820 W, 1/10 W Chip Resistor

120 W, 1/10 W Chip Resistor

1.5 kW, 1/10 W Chip Resistor

8 W, 1 W Chip Resistor

1.5SMC27AT3G

MBT3904DW1T1G

CRCW12062201FKTA

CRCW06036800FKTA

CRCW06031800FKTA

CRCW06031601FKTA

CRCW06038200FKTA

CRCW06031200FKTA

CRCW06031501FKTA

CRCW251208R0FKTA

CRCW06034700FKTA

CRCW06030018FKTA

CRCW06032401FKTA

CRCW06036201FKTA

CRCW06030000FKTA

None

Q1, Q2

R1

R2, R13, R14

R3

R4

R5

R6

R7

R8

R9, R10, R15

470 W, 1/10 W Chip Resistors

18 W, 1/10 W Chip Resistors

2.4 kW, 1/10 W Chip Resistor

6.2 kW, 1/10 W Chip Resistor

0 W, 1/10 W Chip Resistor

Input Transformer

R11, R12

R16

R17

R18

T1

T2

Output Transformer

None

T3

Output Transformer

None

PCB

FR4, 62 mil, ε = 4.81

None

r

MMG2001NT1

RF Device Data

Freescale Semiconductor

3

MMG2001R2

Rev 0

R5

R16

R15

R7

R18

C7

R13

R9

C3

C5

Q1

Q2

R11

C9

B

C

R6

T2

T3

T1

C6

R8

D2

C2

R14

C11

C8

R10

R3

C4

R12

C1

R17

C10

R2

R1

D1

R4

D3

GND

Not

Active

+24 V

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with

the Freescale Semiconductor signature/logo. PCBs may have either Motorola or

Freescale markings during the transition period. These changes will have no

impact on form, fit or function of the current product.

Figure 4. MMG2001NT1 50-870 MHz Test Circuit Component Layout

MMG2001NT1

RF Device Data

Freescale Semiconductor

4

TYPICAL CHARACTERISTICS

−60

−65

60 dBmV

58 dBmV

56 dBmV

−70

−75

−80

−85

52 dBmV

48 dBmV

50 dBmV

54 dBmV

79 Channels, 13.5 dB Tilt @ 870 MHz

0

200

400

600

f, FREQUENCY (MHz)

Figure 5. Composite Triple Beat versus

Frequency

−70

−75

−80

60 dBmV

58 dBmV

56 dBmV

48 dBmV

52 dBmV

50 dBmV

54 dBmV

−85

−90

79 Channels, 13.5 dB Tilt @ 870 MHz

0

200

400

f, FREQUENCY (MHz)

Figure 6. Composite Second Order versus

Frequency

−55

−60

79 Channels, 13.5 dB Tilt @ 870 MHz

60 dBmV

58 dBmV

−65

−70

−75

56 dBmV

54 dBmV

52 dBmV

50 dBmV

−80

−85

−90

48 dBmV

0

200

400

f, FREQUENCY (MHz)

Figure 7. Cross Modulation Distortion versus

Frequency

MMG2001NT1

RF Device Data

Freescale Semiconductor

5

PACKAGE DIMENSIONS

h X 45

A

D

_

E2

1

16

NOTES:

1. CONTROLLING DIMENSION: MILLIMETER.

2. DIMENSIONS AND TOLERANCES PER ASME

Y14.5M, 1994.

3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF

LEAD AND IS COINCIDENT WITH THE LEAD

WHERE THE LEAD EXITS THE PLASTIC BODY AT

THE BOTTOM OF THE PARTING LINE.

4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD

PROTRUSION. ALLOWABLE PROTRUSION IS

0.250 PER SIDE. DIMENSIONS D AND E1 DO

INCLUDE MOLD MISMATCH AND ARE

DETERMINED AT DATUM PLANE −H−.

5. DIMENSION b DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE

b DIMENSION AT MAXIMUM MATERIAL

CONDITION.

D1

8

9

E1

B

BOTTOM VIEW

b1

8X E

M

S

C B

bbb

6. DATUMS −A− AND −B− TO BE DETERMINED AT

DATUM PLANE −H−.

Y

MILLIMETERS

c

c1

DIM MIN

2.000

MAX

2.300

0.100

2.100

7.100

5.180

9.150

7.100

5.180

0.720

A2

A

A1 0.025

A2 1.950

b

DATUM

PLANE

H

SEATING

PLANE

M

S

C A

aaa

D

6.950

D1 4.372

8.850

C

E

SECT W-W

E1 6.950

E2 4.372

L

L1

b

0.466

0.250 BSC

0.300

0.432

0.375

0.279

0.230

b1 0.300

ccc C

c

c1

e

0.180

q

W

GAUGE

PLANE

0.800 BSC

−−− 0.600

W

h

q

0

7

_

L

A1

aaa

bbb

ccc

0.200

0.100

1.000

0.039

DETAIL Y

CASE 978-03

ISSUE C

PFP-16

MMG2001NT1

RF Device Data

Freescale Semiconductor

6

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

5

6

Oct. 2006

Mar. 2007

•

Replaced “N suffix indicates 260°C reflow capable” bullet with RoHS Compliant, p. 1

Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers

and added Manufacturer column, p. 3

MMG2001NT1

RF Device Data

Freescale Semiconductor

7

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MMG2001NT1

RF Device Data

Freescale Semiconductor

Document Number: MMG2001NT1

8^{Rev. 6, 3/2007}


型号：	MMG2001NT1
厂家：	NXP
描述：	40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 978-03, FP-16 高功率电源放大器射频微波功率放大器
文件：	总8页 (文件大小：154K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMG2001NT1 [NXP]

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