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MMRF1004GNR1 [NXP]

RF Power Field Effect Transistors;
MMRF1004GNR1
型号： MMRF1004GNR1
厂家： NXP    NXP
描述：

RF Power Field Effect Transistors
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Document Number: MMRF1004N  
Rev. 1, 1/2014  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
MMRF1004NR1  
MMRF1004GNR1  
N--Channel Enhancement--Mode Lateral MOSFETs  
Designed for Class A or Class AB general purpose applications with  
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation  
and multipurpose amplifier applications.  
Typical Two--Tone Performance @ 2170 MHz: VDD = 28 Vdc, IDQ  
130 mA, Pout = 10 W PEP  
=
1600--2200 MHz, 10 W, 28 V  
GSM, GSM EDGE  
SINGLE N--CDMA  
2 x W--CDMA  
LATERAL N--CHANNEL  
RF POWER MOSFETs  
Power Gain — 15.5 dB  
Drain Efficiency — 36%  
IMD — --34 dBc  
Typical 2--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA,  
Pout = 1 W Avg., Full Frequency Band (2130--2170 MHz), Channel  
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability  
Power Gain — 15.5 dB  
Drain Efficiency — 15%  
IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth  
ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth  
Typical Single--Carrier N--CDMA Performance: VDD = 28 Vdc, IDQ =  
T O -- 2 7 0 -- 2  
PLASTIC  
MMRF1004NR1  
130 mA, Pout = 1 W Avg., Full Frequency Band (1930--1990 MHz), IS--95  
(Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth =  
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.  
Power Gain — 15.5 dB  
Drain Efficiency — 16%  
ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth  
Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout  
4 W Avg., Full Frequency Band (1805--1880 MHz)  
Power Gain — 16 dB  
=
Drain Efficiency — 33%  
TO--270G--2  
PLASTIC  
MMRF1004GNR1  
EVM — 1.3% rms  
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 W CW  
Output Power  
Features  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Internally Matched for Ease of Use  
Qualified Up to a Maximum of 32 VDD Operation  
Integrated ESD Protection  
225C Capable Plastic Package  
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.  
Gate  
Drain  
1
2
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
Figure 1. Pin Connections  
Freescale Semiconductor, Inc., 2013--2014. All rights reserved.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +68  
--0.5, +12  
--65 to +150  
150  
Unit  
Vdc  
Vdc  
C  
Drain--Source Voltage  
V
DSS  
Gate--Source Voltage  
V
GS  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
T
C
C  
(1)  
T
J
225  
C  
Table 2. Thermal Characteristics  
(2)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 78C, 1 W CW  
Case Temperature 79C, 10 W PEP, Two--Tone Test  
R
C/W  
JC  
2.3  
2.9  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
1A  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
A
IV  
Table 4. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD22--A113, IPC/JEDEC J--STD--020  
3
260  
C  
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Off Characteristics  
Zero Gate Voltage Drain Leakage Current  
I
I
—
—
—
—
—
—
10  
1
Adc  
Adc  
Adc  
DSS  
DSS  
GSS  
(V = 68 Vdc, V = 0 Vdc)  
DS  
GS  
Zero Gate Voltage Drain Leakage Current  
(V = 28 Vdc, V = 0 Vdc)  
DS  
GS  
Gate--Source Leakage Current  
I
500  
(V = 5 Vdc, V = 0 Vdc)  
GS  
DS  
On Characteristics  
Gate Threshold Voltage  
(V = 10 Vdc, I = 40 Adc)  
V
V
1.5  
2
2.2  
2.8  
3.5  
4
Vdc  
Vdc  
Vdc  
GS(th)  
GS(Q)  
DS(on)  
DS  
D
Gate Quiescent Voltage  
(V = 28 Vdc, I = 130 mAdc, Measured in Functional Test)  
DD  
D
Drain--Source On--Voltage  
(V = 10 Vdc, I = 0.4 Adc)  
V
—
0.33  
0.4  
GS  
D
(4)  
Dynamic Characteristics  
Output Capacitance  
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
C
—
—
—
20  
—
—
—
pF  
pF  
pF  
oss  
GS  
Reverse Transfer Capacitance  
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)  
DS  
C
11.6  
120  
rss  
GS  
Input Capacitance  
C
iss  
(V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)  
DS  
GS  
1. Continuous use at maximum temperature will affect MTTF.  
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
3. Part internally matched on input.  
(continued)  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
(1)  
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 130 mA, P = 10 W PEP, f1 = 2170 MHz,  
DD  
DQ  
out  
f2 = 2170.1 MHz, Two--Tone Test  
Power Gain  
G
14  
15.5  
36  
17  
—
dB  
%
ps  
D
Drain Efficiency  
33  
—
—
Intermodulation Distortion  
Input Return Loss  
IMD  
IRL  
-- 3 4  
-- 1 5  
-- 2 8  
-- 9  
dBc  
dB  
Typical 2--Carrier W--CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) V = 28 Vdc, I = 130 mA, P =  
out  
DD  
DQ  
1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth  
Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset.  
PAR = 8.5 dB @ 0.01% Probability on CCDF.  
Power Gain  
G
—
—
—
—
—
15.5  
15  
—
—
—
—
—
dB  
%
ps  
D
Drain Efficiency  
Gain Flatness in 30 MHz Bandwidth @ P = 1 W CW  
out  
G
0.3  
dB  
F
Intermodulation Distortion  
IM3  
-- 4 7  
-- 4 9  
dBc  
dBc  
Adjacent Channel Power Ratio  
ACPR  
Typical N--CDMA Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 130 mA, P = 1 W Avg.,  
DD  
DQ  
out  
1930 MHz<Frequency<1990 MHz, Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel  
Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF  
Power Gain  
G
—
—
—
—
15.5  
16  
—
—
—
—
dB  
%
ps  
D
Drain Efficiency  
Gain Flatness in 30 MHz Bandwidth @ P = 1 W CW  
out  
G
0.3  
-- 6 0  
dB  
dBc  
F
Adjacent Channel Power Ratio  
ACPR  
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 hm system) V = 28 Vdc, I = 130 mA, P = 4 W Avg.,  
DD  
DQ  
out  
1805--1880 MHz, EDGE Modulation  
Power Gain  
G
—
—
—
—
—
—
16  
—
—
—
—
—
—
dB  
%
ps  
D
Drain Efficiency  
33  
0.3  
1.3  
-- 6 0  
-- 7 0  
Gain Flatness in 30 MHz Bandwidth @ P = 4 W CW  
out  
G
dB  
F
Error Vector Magnitude  
EVM  
SR1  
SR2  
% rms  
dBc  
dBc  
Spectral Regrowth at 400 kHz Offset  
Spectral Regrowth at 600 kHz Offset  
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull  
wing (GN) parts.  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
3
R1  
V
SUPPLY  
V
BIAS  
+
R2  
Z9  
C11  
C1  
C7  
C3  
C4  
C5  
Z16  
Z17  
R3  
Z8  
Z10  
RF  
OUTPUT  
RF  
INPUT  
Z1  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
Z11  
Z12  
Z13  
Z14  
Z15  
C2  
C6  
DUT  
C8  
C9  
C10  
Z1, Z15  
Z2  
Z3, Z5  
Z4  
Z6  
Z7  
0.066x 0.480Microstrip  
0.066x 0.765Microstrip  
0.066x 0.340x 0.050Taper  
0.340x 0.295Microstrip  
0.020x 0.060Microstrip  
0.0905x 0.280Microstrip  
0.0905x 0.330Microstrip  
0.050x 0.980Microstrip  
Z10  
Z11  
Z12  
Z13  
Z14  
0.930x 0.350Microstrip  
0.930x 0.400Microstrip  
0.050x 0.105Microstrip  
0.405x 0.242Microstrip  
0.066x 0.740Microstrip  
0.050x 1.250Microstrip  
Z16, Z17  
PCB  
Z8  
Z9  
Taconic RF--35, 0.030, = 3.5  
r
Figure 2. MMRF1004NR1 Test Circuit Schematic — 2110--2170 MHz  
Table 6. MMRF1004NR1 Test Circuit Component Designations and Values — 2110--2170 MHz  
Part  
Description  
100 nF Chip Capacitor  
Part Number  
CDR33BX104AKYS  
Manufacturer  
Kemet  
C1  
C2, C6  
C3, C7, C8  
4.7 pF Chip Capacitors  
ATC100B4R7CT500XT  
ATC100B9R1CT500XT  
GRM55DR61H106KA88B  
T490D106K035AT  
ATC  
9.1 pF Chip Capacitors  
ATC  
C4, C5, C9, C10  
10 F, 50 V Chip Capacitors  
10 F, 35 V Tantalum Chip Capacitor  
1 k, 1/4 W Chip Resistor  
10 k, 1/4 W Chip Resistor  
10 , 1/4 W Chip Resistor  
Murata  
Kemet  
C11  
R1  
R2  
R3  
CRCW12061001FKEA  
CRCW12061002FKEA  
CRCW120610R0FKEA  
Vishay  
Vishay  
Vishay  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
4
C1  
R2  
C3  
C11  
C4 C5  
C7  
R1  
R3  
C2  
C6  
C9 C10  
C8  
Figure 3. MMRF1004NR1 Test Circuit Component Layout — 2110--2170 MHz  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
5
TYPICAL CHARACTERISTICS — 2110--2170 MHz  
-- 5  
40  
D
-- 1 0  
-- 1 5  
-- 2 0  
-- 2 5  
36  
32  
28  
24  
20  
16  
IRL  
= 28 Vdc, P = 10 W (PEP)  
V
DD  
out  
I
= 130 mA, 100 kHz Tone Spacing  
DQ  
-- 3 0  
-- 3 5  
IMD  
G
ps  
-- 4 0  
2050  
2090  
2130  
2170  
2210  
f, FREQUENCY (MHz)  
Figure 4. Two--Tone Wideband Performance  
@ Pout = 10 Watts (PEP)  
18  
17  
16  
15  
14  
-- 1 0  
V
= 28 Vdc, f = 2170 MHz  
DD  
I
= 195 mA  
DQ  
Two--Tone Measurements  
100 kHz Tone Spacing  
-- 2 0  
-- 3 0  
162.5 mA  
130 mA  
I
= 65 mA  
DQ  
195 mA  
97.5 mA  
65 mA  
-- 4 0  
13  
12  
11  
162.5 mA  
10  
V
= 28 Vdc, f = 2170 MHz  
DD  
-- 5 0  
-- 6 0  
97.5 mA  
130 mA  
Two--Tone Measurements  
100 kHz Tone Spacing  
0.1  
1
30  
0.1  
1
10  
30  
P
, OUTPUT POWER (WATTS) PEP  
P
, OUTPUT POWER (WATTS) PEP  
out  
out  
Figure 6. Third Order Intermodulation  
Distortion versus Output Power  
Figure 5. Two--Tone Power Gain versus  
Output Power  
-- 1 0  
-- 2 0  
-- 3 0  
-- 4 0  
-- 5 0  
-- 6 0  
-- 7 0  
-- 2 0  
V
= 28 Vdc, I = 130 mA  
DQ  
DD  
f1 = 2170 MHz, f2 = 2170.1 MHz  
Two--Tone Measurements  
3rd Order  
-- 3 0  
-- 4 0  
-- 5 0  
-- 6 0  
3rd Order  
V
= 28 Vdc, P = 10 W (PEP)  
out  
DD  
I
= 130 mA, Two--Tone Measurements  
(f1 + f2)/2 = Center Frequency of 2170 MHz  
DQ  
7th Order  
5th Order  
7th Order  
5th Order  
-- 7 0  
0.1  
1
, OUTPUT POWER (WATTS) PEP  
10  
30  
0.1  
1
10  
100  
P
TWO--TONE SPACING (MHz)  
out  
Figure 7. Intermodulation Distortion Products  
versus Output Power  
Figure 8. Intermodulation Distortion Products  
versus Tone Spacing  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
6
TYPICAL CHARACTERISTICS — 2110--2170 MHz  
18  
70  
60  
50  
40  
30  
20  
47  
45  
43  
41  
39  
T
= --30_C  
25_C  
C
G
17  
16  
15  
14  
13  
ps  
Ideal  
P3dB = 41.5 dBm (14.2 W)  
-- 3 0 _C  
25_C  
P1dB = 40.9 dBm (12.26 W)  
85_C  
85_C  
Actual  
V
I
= 28 Vdc  
= 130 mA  
D
DD  
DQ  
f = 2170 MHz  
V
= 28 Vdc, I = 130 mA  
DQ  
DD  
37  
35  
Pulsed CW, 8 sec(on), 1 msec(off)  
f = 2170 MHz  
12  
11  
10  
0
20  
22  
24  
26  
28  
30  
0.1  
1
10  
30  
P , INPUT POWER (dBm)  
in  
P
, OUTPUT POWER (WATTS) CW  
out  
Figure 9. Pulsed CW Output Power versus  
Input Power  
Figure 10. Power Gain and Drain Efficiency  
versus CW Output Power  
27  
6
16  
15  
V
P
= 28 Vdc  
= 10 W (PEP)  
= 130 mA  
DD  
out  
S21  
18  
9
3
0
I
DQ  
14  
13  
12  
11  
10  
-- 3  
-- 6  
-- 9  
0
32 V  
28 V  
-- 9  
V
= 24 V  
DD  
-- 1 8  
8
S11  
10  
-- 1 2  
-- 1 5  
-- 2 7  
-- 3 6  
I
= 130 mA  
DQ  
f = 2170 MHz  
0
3
6
9
12  
15  
18 21  
400  
800  
1200  
1600  
2000  
2400  
2800  
3200  
f, FREQUENCY (MHz)  
P
, OUTPUT POWER (WATTS) CW  
out  
Figure 11. Power Gain versus Output Power  
Figure 12. Broadband Frequency Response  
8
10  
7
10  
6
10  
5
10  
4
10  
90  
110  
130  
J
150  
170  
190  
210  
230  
250  
T , JUNCTION TEMPERATURE (C)  
This above graph displays calculated MTTF in hours when the device  
is operated at V = 28 and = 47.2%.  
DD  
D
MTTF calculator available at http://www.freescale.com/rf. Select  
Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
Figure 13. MTTF versus Junction Temperature — CW  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
7
W--CDMA TYPICAL CHARACTERISTICS — 2110--2170 MHz  
16  
15.8  
15.6  
15.4  
15.2  
18  
17  
16  
G
ps  
15  
V
= 28 Vdc, P = 1 W (Avg.), I = 130 mA  
out DQ  
DD  
D
2--Carrier W--CDMA, 10 MHz Carrier Spacing  
3.84 MHz Channel Bandwidth, PAR = 8.5 dB  
@ 0.01% Probability (CCDF)  
14  
-- 4 5  
-- 4 7  
-- 4 9  
-- 5 1  
-- 1 0  
-- 1 2  
-- 1 4  
-- 1 6  
-- 1 8  
15  
14.8  
IM3  
ACPR  
14.6  
14.4  
-- 5 3  
-- 5 5  
14.2  
14  
IRL  
2060 2080 2100  
2120 2140 2160 2180 2200 2220  
f, FREQUENCY (MHz)  
Figure 14. 2--Carrier W--CDMA Broadband Performance  
@ Pout = 1 Watt Avg.  
49  
-- 2 0  
V
= 28 Vdc, I = 130 mA  
DQ  
DD  
f1 = 2165 MHz, f2 = 2175 MHz  
2--Carrier W--CDMA, 10 MHz Carrier  
Spacing, 3.84 MHz Channel  
Bandwidth, PAR = 8.5 dB  
42  
35  
28  
21  
14  
-- 2 5  
-- 3 0  
-- 3 5  
-- 4 0  
@ 0.01% Probability (CCDF)  
D
G
T
= 25_C  
ps  
C
-- 4 5  
-- 5 0  
-- 5 5  
IM3  
ACPR  
7
0
0.1  
1
10  
20  
P
, OUTPUT POWER (WATTS) AVG.  
out  
Figure 15. 2--Carrier W--CDMA ACPR, IM3, Power Gain  
and Drain Efficiency versus Output Power  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
8
W--CDMA TEST SIGNAL  
100  
10  
+20  
+30  
0
3.84 MHz  
Channel BW  
-- 1 0  
1
-- 2 0  
-- 3 0  
0.1  
0.01  
W--CDMA. ACPR Measured in 3.84 MHz Channel  
Bandwidth @ 5 MHz Offset. IM3 Measured in  
3.84 MHz Bandwidth @ 10 MHz Offset. PAR =  
8.5 dB @ 0.01% Probability on CCDF  
-- 4 0  
-- 5 0  
--ACPR in  
+ACPR in  
-- 6 0  
-- 7 0  
-- 8 0  
3.84 MHz BW 3.84 MHz BW  
-- I M 3 i n  
3.84 MHz BW  
+IM3 in  
3.84 MHz BW  
0.001  
0.0001  
0
2
4
6
8
10  
-- 2 5 -- 2 0 -- 1 5 -- 1 0 -- 5  
0
5
10  
15  
20  
2 5  
PEAK--TO--AVERAGE (dB)  
f, FREQUENCY (MHz)  
Figure 16. CCDF W--CDMA 3GPP, Test Model 1,  
64 DPCH, 67% Clipping, Single--Carrier Test Signal  
Figure 17. 2-Carrier W-CDMA Spectrum  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
9
N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz  
R1  
V
SUPPLY  
V
BIAS  
+
R2  
Z3  
Z7  
C11  
C1  
C7  
Z5  
C3  
C4  
C5  
Z17  
R3  
Z6  
Z8  
RF  
RF  
OUTPUT  
INPUT  
Z1  
Z2  
Z4  
Z9  
Z10 Z11 Z12 Z13 Z14 Z15  
Z16  
C2  
C6  
DUT  
Z18  
C8  
C9  
C10  
Z1  
Z2  
Z3  
Z4  
Z5, Z6  
Z7  
Z8  
Z9  
Z10  
0.066x 0.480Microstrip  
0.066x 0.728Microstrip  
0.354x 0.512Microstrip  
0.066x 0.079Microstrip  
0.591x 0.335Microstrip  
0.050x 0.980Microstrip  
1.142x 0.350Microstrip  
1.142x 0.516Microstrip  
0.433x 0.276Microstrip  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
Z17, Z18  
PCB  
0.244x 0.423Microstrip  
0.244x 0.066x 0.089Taper  
0.066x 0.182Microstrip  
0.066x 0.263Microstrip  
0.236x 0.118Microstrip  
0.066x 0.099Microstrip  
0.050x 1.250Microstrip  
Taconic RF--35, 0.030, = 3.5  
r
Figure 18. MMRF1004NR1 Test Circuit Schematic — 1930--1990 MHz  
Table 7. MMRF1004NR1 Test Circuit Component Designations and Values — 1930--1990 MHz  
Part  
Description  
100 nF Chip Capacitor  
Part Number  
12065C104KAT  
Manufacturer  
AVX  
C1  
C2, C6  
C3, C7, C8  
4.7 pF Chip Capacitors  
ATC100B4R7BT500XT  
ATC100B9R1BT500XT  
C5750X5R1H106MT  
TAJD106K035R  
ATC  
9.1 pF Chip Capacitors  
ATC  
C4, C5, C9, C10  
10 F Chip Capacitors  
TDK  
C11  
10 F, 35 V Tantalum Chip Capacitor  
10 k, 1/4 W Chip Resistors  
10 , 1/4 W Chip Resistor  
AVX  
R1, R2  
R3  
CRCW12061002FKEA  
CRCW120610R0FKEA  
Vishay  
Vishay  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
10  
N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz  
V
DD  
V
GS  
R2 C1  
C11  
C4  
C5  
C3  
C7  
R1  
R3  
C6  
C2  
C8  
C9 C10  
Figure 19. MMRF1004NR1 Test Circuit Component Layout — 1930--1990 MHz  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
11  
N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz  
15.9  
15.8  
15.7  
15.6  
15.5  
19  
V
= 28 Vdc, P = 1 W (Avg.), I = 500 mA  
out DQ  
DD  
18  
17  
16  
15  
N--CDMA IS--95 (Pilot, Sync, Paging, Traffic  
Codes 8 Through 13)  
D
G
-- 5 9  
ps  
15.4  
15.3  
15.2  
--59.4  
-- 8  
--59.8  
--60.2  
-- 11  
-- 1 4  
-- 1 7  
-- 2 0  
ACPR  
IRL  
15.1  
15  
--60.6  
-- 6 1  
14.9  
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000  
f, FREQUENCY (MHz)  
Figure 20. Single--Carrier N--CDMA Broadband Performance  
@ Pout = 1 Watt Avg.  
50  
-- 4 0  
-- 4 5  
-- 5 0  
-- 5 5  
-- 6 0  
-- 6 5  
V
= 28 Vdc, I = 130 mA  
DQ  
DD  
f = 1960 MHz, N--CDMA IS--95  
(Pilot, Sync, Paging, Traffic Codes  
8 Through 13)  
40  
30  
D
20  
10  
0
ACPR  
0.1  
1
10  
P
, OUTPUT POWER (WATTS) AVG.  
out  
Figure 21. Single--Carrier N--CDMA ACPR and Drain  
Efficiency versus Output Power  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
12  
N--CDMA TEST SIGNAL  
100  
10  
-- 1 0  
-- 2 0  
-- 3 0  
1.2288 MHz  
Channel BW  
.
.
. .  
..  
.
.
.
.
..  
.
.
.
. . ..  
..  
.. . .. ..  
.
.
.
. .  
. . . .  
.
.
.
. .  
.
.
.
.
.
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.
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.
.
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.
.
.
.
1
.
-- 4 0  
-- 5 0  
-- 6 0  
-- 7 0  
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
0.1  
0.01  
.
.
.
..  
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8  
Through 13) 1.2288 MHz Channel Bandwidth  
Carriers. ACPR Measured in 30 kHz Bandwidth @  
885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability  
on CCDF.  
.
.
..  
. .  
.
.
.
.
.
.
.
.
.
. .  
. ..  
. . .  
. .  
.. .  
.
.
.. .  
.
.
.
.
.
..  
.
.
..  
.
.
. ..  
. .  
.
.
.
.
.
.
.
.
..  
.
.
.
.
.
.
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.
.
..  
. .  
. .  
. .  
.
.
.
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.
..  
.
.
. .  
.
.
. .  
.
..  
.
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..  
.
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.
..  
.
.
..  
..  
.
.
..  
..  
.
.
.
.
..  
.
.
.
..  
.
.
.. .  
..  
..  
0.001  
-- 8 0  
..  
.
..  
.
.
.
.. .  
.
..  
.
--ACPR in 30 kHz  
Integrated BW  
+ACPR in 30 kHz  
Integrated BW  
.
.
.
.
.
.
.
.
..  
.
. .  
.
.
.
.
.
.....  
.
.
.
.
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.
.
...  
.
.
. ..  
. .  
. ..  
.
.. .  
..  
.
.
.
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....  
.
.
..  
.
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..  
.
.
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.
.
.
.
.
.
-- 9 0  
--100  
-- 11 0  
.
0.0001  
0
2
4
6
8
10  
PEAK--TO--AVERAGE (dB)  
Figure 22. Single--Carrier CCDF N--CDMA  
-- 3 . 6 -- 2 . 9 -- 2 . 2 -- 1 . 5 -- 0 . 7  
0
0.7 1.5  
2.2 2.9 3 . 6  
f, FREQUENCY (MHz)  
Figure 23. Single--Carrier N--CDMA Spectrum  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
13  
GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz  
R1  
V
SUPPLY  
V
BIAS  
+
R2  
Z9  
R3  
C11  
C1  
Z6  
C7  
Z7  
C3  
C4  
C5  
Z17  
Z18  
Z10  
RF  
OUTPUT  
RF  
INPUT  
Z1  
Z2  
Z3  
Z4  
Z5  
Z8  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
C2  
C6  
DUT  
C8  
C9  
C10  
Z1, Z16  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
Z8  
Z9  
0.066x 0.480Microstrip  
0.066x 0.137Microstrip  
0.236x 0.236Microstrip  
0.066x 0.354Microstrip  
0.551x 0.512Microstrip  
0.066x 0.079Microstrip  
0.591x 0.189Microstrip  
0.591x 0.334Microstrip  
0.050x 0.980Microstrip  
Z10  
1.142x 0.350Microstrip  
1.142x 0.516Microstrip  
0.433x 0.276Microstrip  
0.276x 0.157Microstrip  
0.236x 0.433Microstrip  
0.066x 0.104Microstrip  
0.050x 1.250Microstrip  
Z11  
Z12  
Z13  
Z14  
Z15  
Z17, Z18  
PCB  
Taconic RF--35, 0.030, = 3.5  
r
Figure 24. MMRF1004NR1 Test Circuit Schematic — 1805--1880 MHz  
Table 8. MMRF1004NR1 Test Circuit Component Designations and Values —1805--1880 MHz  
Part  
Description  
100 nF Chip Capacitor  
Part Number  
12065C104KAT  
Manufacturer  
AVX  
C1  
C2, C6  
C3, C7, C8  
4.7 pF Chip Capacitors  
ATC100B4R7BT500XT  
ATC100B9R1BT500XT  
C5750X5R1H106MT  
TAJD106K035R  
ATC  
9.1 pF Chip Capacitors  
ATC  
C4, C5, C9, C10  
10 F Chip Capacitors  
TDK  
C11  
10 F, 35 V Tantalum Chip Capacitor  
10 k, 1/4 W Chip Resistors  
10 , 1/4 W Chip Resistor  
AVX  
R1, R2  
R3  
CRCW12061001FKEA  
CRCW120610R0FKEA  
Vishay  
Vishay  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
14  
GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz  
V
DD  
V
GS  
R2 C1  
C11  
C4  
C5  
C3  
C7  
R1  
R3  
C6  
C2  
C8  
C9 C10  
Figure 25. MMRF1004NR1 Test Circuit Component Layout — 1805--1880 MHz  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
15  
GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz  
17  
50  
0
G
ps  
40  
-- 1 0  
16  
D
-- 2 0  
-- 3 0  
-- 4 0  
15  
14  
13  
30  
20  
10  
IRL  
V
= 28 Vdc  
= 130 mA  
DD  
I
DQ  
1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900  
f, FREQUENCY (MHz)  
Figure 26. Power Gain, Input Return Loss and Drain  
Efficiency versus Frequency @ Pout = 4 Watts  
6
5
4
3
2
60  
50  
40  
30  
20  
V
I
= 28 Vdc  
= 130 mA  
DD  
DQ  
f = 1840 MHz  
D
EVM  
10  
0
1
0
0.1  
1
10  
P
, OUTPUT POWER (WATTS) AVG.  
out  
Figure 27. Error Vector Magnitude and Drain  
Efficiency versus Output Power  
GSM EDGE TEST SIGNAL  
-- 5 0  
-- 5 5  
-- 6 0  
-- 6 5  
-- 7 0  
-- 1 0  
Reference Power  
VBW = 30 kHz  
Sweep Time = 70 ms  
RBW = 30 kHz  
V
= 28 Vdc  
= 130 mA  
-- 2 0  
-- 3 0  
DD  
I
DQ  
f = 1840 MHz  
-- 4 0  
-- 5 0  
-- 6 0  
-- 7 0  
-- 8 0  
-- 9 0  
--100  
SR @ 400 kHz  
400 kHz  
600 kHz  
400 kHz  
600 kHz  
SR @ 600 kHz  
-- 7 5  
-- 8 0  
-- 11 0  
Center 1.96 GHz  
200 kHz  
Span 2 MHz  
0.1  
1
10  
P
, OUTPUT POWER (WATTS)  
out  
Figure 28. Spectral Regrowth at 400 kHz and  
600 kHz versus Output Power  
Figure 29. EDGE Spectrum  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
16  
2170 MHz  
= 28 Vdc, I = 130 mA, P = 10 W PEP  
Z = 25   
o
V
DD  
DQ  
out  
f
Z
Z
load  
source  
MHz  
2110  
2140  
2170  
3.619 + j0.792 2.544 + j3.068  
3.918 + j0.797 2.673 + j3.291  
4.087 + j0.558 2.818 + j3.406  
f = 2170 MHz  
f = 2110 MHz  
Z
load  
f = 2170 MHz  
f = 2110 MHz  
Z
source  
Z = 25   
o
1900 MHz  
V
= 28 Vdc, I = 130 mA, P = 1 W Avg.  
DQ out  
DD  
f
Z
Z
load  
source  
MHz  
f = 1990 MHz  
f = 1930 MHz  
1930  
1960  
1990  
9.237 + j1.849 2.770 + j3.497  
9.521 + j2.144 2.754 + j3.668  
9.889 + j2.434 2.772 + j3.833  
Z
load  
f = 1990 MHz  
Z
source  
f = 1930 MHz  
1800 MHz  
V
= 28 Vdc, I = 130 mA, P = 4 W Avg.  
DQ out  
DD  
Z = 25   
o
f
Z
Z
load  
source  
MHz  
1805 13.237 + j5.810 2.445 + j3.698  
1840 13.953 + j6.084 2.542 + j3.942  
1880 14.858 + j6.279 2.695 + j4.170  
f = 1880 MHz  
f = 1805 MHz  
Z
load  
Z
f = 1805 MHz  
source  
f = 1880 MHz  
Z
Z
=
=
Test circuit impedance as measured from  
gate to ground.  
source  
Test circuit impedance as measured  
from drain to ground.  
load  
Output  
Device  
Input  
Matching  
Network  
Under  
Test  
Matching  
Network  
Z
Z
source  
load  
Figure 30. Series Equivalent Source and Load Impedance  
MMRF1004NR1 MMRF1004GNR1  
17  
RF Device Data  
Freescale Semiconductor  
Table 9. Common Source Scattering Parameters (V = 28 V, I = 126 mA, T = 25C, 50 ohm system)  
DD  
DQ  
A
S
S
S
S
22  
f
11  
21  
12  
MHz  
|S  
|
11  
   
|S  
|
21  
   
|S  
|
12  
   
|S |  
22  
   
500  
550  
0.984  
0.986  
0.985  
0.986  
0.982  
0.983  
0.983  
0.979  
0.980  
0.977  
0.978  
0.972  
0.972  
0.963  
0.964  
0.956  
0.948  
0.939  
0.927  
0.910  
0.889  
0.861  
0.821  
0.780  
0.722  
0.666  
0.618  
0.603  
0.614  
0.654  
0.701  
0.747  
0.783  
0.816  
0.842  
0.864  
0.882  
0.894  
0.906  
0.910  
--178.1  
--179.0  
179.9  
178.9  
177.9  
177.2  
176.5  
175.5  
174.8  
174.0  
173.2  
172.4  
171.4  
170.8  
169.9  
169.0  
167.8  
167.0  
165.7  
164.5  
163.2  
161.9  
160.9  
160.1  
160.6  
162.5  
167.0  
173.3  
179.7  
--175.6  
--173.5  
--172.7  
--172.6  
--172.9  
--173.6  
--174.2  
--175.0  
--175.7  
--176.4  
--176.9  
1.195  
0.947  
0.747  
0.581  
0.446  
0.336  
0.248  
0.188  
0.168  
0.183  
0.223  
0.276  
0.335  
0.396  
0.461  
0.531  
0.604  
0.685  
0.772  
0.869  
0.975  
1.093  
1.221  
1.356  
1.491  
1.606  
1.687  
1.706  
1.673  
1.591  
1.484  
1.364  
1.242  
1.136  
1.042  
0.961  
0.888  
0.822  
0.764  
0.712  
42.42  
40.48  
39.66  
39.89  
41.80  
46.70  
56.02  
72.74  
96.69  
119.3  
134.3  
142.2  
146.4  
148.5  
148.8  
148.2  
146.9  
144.8  
142.2  
138.7  
134.7  
129.7  
123.8  
116.7  
108.3  
98.77  
88.09  
76.98  
66.08  
55.96  
47.04  
39.29  
32.87  
27.69  
23.26  
19.26  
15.75  
12.69  
9.857  
7.587  
0.001  
0.001  
0.001  
0.001  
0.001  
0.002  
0.002  
0.003  
0.003  
0.004  
0.004  
0.004  
0.005  
0.005  
0.006  
0.007  
0.007  
0.008  
0.008  
0.009  
0.010  
0.010  
0.011  
0.012  
0.013  
0.014  
0.014  
0.013  
0.012  
0.011  
0.010  
0.008  
0.006  
0.004  
0.004  
0.005  
0.006  
0.008  
0.009  
0.008  
--129.1  
--159.2  
147.4  
119.1  
108.1  
102.9  
96.99  
97.40  
94.63  
91.92  
92.80  
89.92  
89.90  
87.51  
89.25  
86.98  
85.08  
82.40  
79.69  
77.79  
75.79  
72.86  
69.89  
63.71  
57.70  
49.85  
41.19  
32.65  
25.40  
20.73  
15.11  
10.13  
6.333  
15.63  
42.20  
57.76  
62.56  
59.72  
49.09  
39.24  
0.875  
0.892  
0.905  
0.913  
0.927  
0.935  
0.941  
0.947  
0.951  
0.955  
0.960  
0.962  
0.966  
0.977  
0.971  
0.977  
0.982  
0.986  
0.988  
0.994  
0.991  
0.993  
0.996  
0.984  
0.985  
0.977  
0.970  
0.958  
0.954  
0.945  
0.947  
0.947  
0.945  
0.944  
0.944  
0.948  
0.948  
0.949  
0.951  
0.955  
--116.3  
--121.6  
--125.9  
--129.9  
--133.4  
--136.4  
--139.5  
--141.9  
--144.4  
--146.6  
--148.6  
--150.5  
--152.2  
--153.7  
--155.2  
--156.8  
--157.9  
--159.5  
--160.7  
--162.1  
--163.4  
--164.7  
--166.0  
--167.4  
--168.5  
--169.6  
--170.8  
--171.3  
--171.9  
--172.3  
--172.6  
--173.0  
--173.6  
--173.9  
--174.2  
--174.6  
--175.2  
--175.7  
--176.1  
600  
650  
700  
750  
800  
850  
900  
950  
1000  
1050  
1100  
1150  
1200  
1250  
1300  
1350  
1400  
1450  
1500  
1550  
1600  
1650  
1700  
1750  
1800  
1850  
1900  
1950  
2000  
2050  
2100  
2150  
2200  
2250  
2300  
2350  
2400  
2450  
--176.5  
(continued)  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
18  
Table 9. Common Source Scattering Parameters (V = 28 V, I = 126 mA, T = 25C, 50 ohm system) (continued)  
DD  
DQ  
A
S
S
S
S
22  
f
11  
21  
12  
MHz  
|S  
|
11  
   
|S  
|
21  
   
|S  
|
12  
   
|S |  
22  
   
2500  
2550  
2600  
2650  
2700  
2750  
2800  
2850  
2900  
2950  
3000  
3050  
3100  
3150  
3200  
0.923  
0.927  
0.937  
0.937  
0.942  
0.945  
0.946  
0.950  
0.949  
0.952  
0.950  
0.958  
0.953  
0.957  
0.960  
--177.5  
--178.0  
--178.8  
--179.0  
--179.8  
--179.9  
179.5  
179.3  
178.8  
178.5  
178.4  
177.9  
177.7  
177.2  
177.4  
0.666  
0.625  
0.591  
0.559  
0.529  
0.504  
0.479  
0.456  
0.436  
0.419  
0.402  
0.387  
0.373  
0.362  
0.350  
5.462  
3.680  
0.006  
0.006  
0.006  
0.007  
0.007  
0.007  
0.007  
0.007  
0.008  
0.009  
0.011  
0.012  
0.013  
0.014  
0.013  
42.56  
52.25  
60.26  
64.14  
65.62  
64.71  
67.58  
75.44  
82.04  
83.60  
83.41  
81.35  
77.45  
70.98  
67.00  
0.957  
0.962  
0.961  
0.964  
0.964  
0.964  
0.966  
0.966  
0.964  
0.967  
0.968  
0.964  
0.969  
0.970  
0.970  
--177.2  
--177.8  
--178.4  
--179.1  
--179.6  
179.7  
179.4  
178.8  
178.3  
177.9  
177.4  
176.8  
176.4  
176.2  
175.5  
1.864  
0.237  
--1.378  
--2.768  
--4.088  
--5.412  
--6.305  
--7.279  
--8.087  
--9.138  
--9.904  
--10.86  
-- 11 . 7 9  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
19  
PACKAGE DIMENSIONS  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
20  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
21  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
22  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
23  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
24  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
25  
PRODUCT DOCUMENTATION  
Refer to the following documents to aid your design process.  
Application Notes  
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages  
AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages  
Engineering Bulletins  
EB212: Using Data Sheet Impedances for RF LDMOS Devices  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
0
1
Dec. 2013  
Jan. 2014  
Initial Release of Data Sheet  
Fig. 1, Pin Connections: corrected pin 1 and pin 2 labels to align with labelling in the mechanical outline, p. 1  
Table 2. Thermal Characteristics: CW thermal value changed from 2.5 to 2.3C/W to reflect recent thermal  
test results; two--tone test corrected from 5 W PEP to 10 W PEP and the thermal value changed from 5.9 to  
2.9C/W to reflect recent thermal test results, p. 2  
MMRF1004NR1 MMRF1004GNR1  
RF Device Data  
Freescale Semiconductor  
26  
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Document Number: MMRF1004N  
Rev. 1,1/2014

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