MRF300AN-230MHZ [NXP]
RF Power Field-Effect Transistor;
| 型号： | MRF300AN-230MHZ |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总42页 (文件大小：1282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF300AN
Rev. 2, 06/2019
NXP Semiconductors
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
MRF300AN
MRF300BN
These devices are designed for use in HF and VHF communications,
industrial, scientific and medical (ISM) and broadcast and aerospace
applications. The devices are extremely rugged and exhibit high performance
up to 250 MHz.
1.8–250 MHz, 300 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance: VDD = 50 Vdc
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
Signal Type
(1)
13.56
320 CW
330 CW
330 CW
320 CW
325 CW
320 CW
330 Peak
28.1
27.4
28.2
27.3
25.1
23.0
20.4
79.7
80.0
79.0
73.0
77.5
73.0
75.5
(2)
27
(3)
40.68
CW
(4)
50
(5)
81.36
G
S
D
(6)
144
(7)
230
Pulse
T O -- 2 4 7 -- 3
MRF300AN
(100 sec, 20% Duty Cycle)
Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
40.68
Pulse
(100 sec, 20%
Duty Cycle)
> 65:1 at all
Phase
Angles
2 Peak
(3 dB
Overdrive)
50
No Device
Degradation
230
Pulse
(100 sec, 20%
Duty Cycle)
> 65:1 at all
Phase
Angles
6 Peak
(3 dB
Overdrive)
50
No Device
Degradation
D
S
G
1. Measured in 13.56 MHz reference circuit (page 5).
2. Measured in 27 MHz reference circuit (page 10).
3. Measured in 40.68 MHz reference circuit (page 15).
4. Measured in 50 MHz reference circuit (page 20).
5. Measured in 81.36 MHz reference circuit (page 25).
6. Measured in 144 MHz reference circuit (page 30).
7. Measured in 230 MHz fixture (page 35).
T O -- 2 4 7 -- 3
MRF300BN
D
S
G
Features
Mirror pinout versions (A and B) to simplify use in a push--pull,
two--up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate--source
voltage range for improved Class C operation
Included in NXP product longevity program with assured
supply for a minimum of 15 years after launch
Backside
Note: Exposed backside of the package
also serves as a source terminal
for the transistor.
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies
2018–2019 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
–0.5, +133
–6.0, +10
50
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +175
T
C
C
(1,2)
T
J
C
Total Device Dissipation @ T = 25C
P
272
W
C
D
Derate above 25C
1.82
W/C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.55
C/W
JC
CW: Case Temperature 76C, 300 W CW, 50 Vdc, I
= 50 mA, 40.68 MHz
DQ
Thermal Impedance, Junction to Case
Z
0.13
C/W
JC
Pulse: Case Temperature 74C, 300 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
50 Vdc, I = 100 mA, 230 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
2, passes 2500 V
C3, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
(4)
Per JESD22--A113, IPC/JEDEC J--STD--020
0
225
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
I
—
133
—
—
—
—
1
Adc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 50 mAdc)
V
—
10
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
I
Adc
DSS
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 840 Adc)
V
V
1.7
—
—
—
2.2
2.5
0.16
28
2.7
—
—
—
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 100 mAdc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1 Adc)
V
GS
D
Forward Transconductance
(V = 10 Vdc, I = 30 Adc)
g
fs
DS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Peak temperature during reflow process must not exceed 225C.
(continued)
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
C
—
—
—
2.31
104
403
—
—
—
pF
pF
pF
rss
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Typical Performance — 230 MHz (In NXP 230 MHz Fixture, 50 ohm system) V = 50 Vdc, I = 100 mA, P = 3 W, f = 230 MHz,
DD
DQ
in
100 sec Pulse Width, 20% Duty Cycle
Common--Source Amplifier Output Power
P
—
—
—
330
—
—
—
W
%
out
Drain Efficiency
75.5
–21
D
Input Return Loss
IRL
dB
Table 6. Load Mismatch/Ruggedness (In NXP 230 MHz Fixture, 50 ohm system) I = 100 mA
DQ
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
DD
230
Pulse
> 65:1 at all
6 Peak
50
No Device Degradation
(100 sec, 20% Duty Cycle)
Phase Angles
(3 dB Overdrive)
Table 7. Ordering Information — Device
Device
Shipping Information
Package
MRF300AN
TO--247--3L (Pin 1: Gate,
Pin 2: Source, Pin 3: Drain)
MPQ = 240 devices (30 devices per tube, 8 tubes per box)
MRF300BN
TO--247--3L (Pin 1: Drain,
Pin 2: Source, Pin 3: Gate)
Table 8. Ordering Information — Reference Circuits
Order Number
Description
MRF300AN-13MHZ
MRF300AN-27MHZ
MRF300AN-40MHZ
MRF300AN-50MHZ
MRF300AN-81MHZ
MRF300AN-144MHZ
MRF300AN-230MHZ
MRF300AN 13.56 MHz Reference Circuit
MRF300AN 27 MHz Reference Circuit
MRF300AN 40.68 MHz Reference Circuit
MRF300AN 50 MHz Reference Circuit
MRF300AN 81.36 MHz Reference Circuit
MRF300AN 144 MHz Reference Circuit
MRF300AN 230 MHz Test Fixture
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
8
1000
100
10
Measured with 30 mV(rms)ac @ 1 MHz, V = 0 Vdc
GS
V
= 50 Vdc
DD
I
D
= 6.2 Amps
C
iss
7
10
10
C
oss
7.8 Amps
6
8.7 Amps
10
1
5
10
10
C
rss
4
0
10
V
20
30
40
50
90
110
130
150
170
190
, DRAIN--SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (C)
J
DS
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
Figure 1. Capacitance versus Drain--Source Voltage
MTTF calculator available at http://www.nxp.com/RF/calculators.
Figure 2. MTTF versus Junction Temperature — CW
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
4
13.56 MHz REFERENCE CIRCUIT (MRF300AN)
Table 9. 13.56 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 0.5 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
13.56
320
28.1
79.7
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
5
13.56 MHz REFERENCE CIRCUIT (MRF300AN) — 2 3 (5.1 cm 7.6 cm)
R4
C14
R3
R5
C7 C8 Cꢀ11
R6 J1
D1
JP1
L3
L4
R2
J2
C9
C6
C10
C4
C3
C2
C5
C13
C12
J4
L5
L1
L2
R1
J3
C1
Q1
Rev. 0
aaa--034124
Figure 3. MRF300AN 13.56 MHz Reference Circuit Component Layout
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
6
13.56 MHz REFERENCE CIRCUIT (MRF300AN)
Table 10. MRF300AN Reference Circuit Component Designations and Values — 13.56 MHz
Part
Description
Part Number
Manufacturer
C1
1 nF Chip Capacitor
GRM2165C2A102JA01D
Murata
ATC
C2, C3, C4
430 pF Chip Capacitor
75 pF Chip Capacitor
330 pF Chip Capacitor
800B431JT200XT
800B750JT500XT
800B331JT200XT
C5
C6
ATC
ATC
C7, C8, C9, C10 6.8 nF Chip Capacitor
GRM32QR73A682KW01L Murata
C11
C12
C13
C14
D1
10 F Chip Capacitor
GRM32EC72A106KE05L
GRM21BR72A103KA01B
GJ821BR71H105KA12L
MCGPR100V227M16X26
SMAJ4738A--TP
Murata
Murata
Murata
10 nF Chip Capacitor
1 F Chip Capacitor
220 F, 100 V Electrolytic Capacitor
8.2 V Zener Diode
Multicomp
Micro Commercial Components
TE Connectivity
J1
Right Angle Breakaway Headers (2 Pins)
Jumper
9-146305-0
J2, J3, J4
JP1
L1
Copper Foil
Shunt (J1)
382811-8
TE Connectivity
ATC
390 nH Chip Inductor
0805CS-391XJLC
2014VS-33NMEB
1010VS-141ME
L2
33 nF Air Core Inductor
140 nH Air Core Inductor
250 nH Air Core Inductor
RF Power LDMOS Transistor
33 , 1/8 W Chip Resistor
5.0 k Multi-turn Cermet Trimming Potentiometer
12 k, 1/4 W Chip Resistor
27 k, 1/4 W Chip Resistor
20 k, 1/4 W Chip Resistor
Coilcraft
Coilcraft
Coilcraft
NXP
L3, L4
L5
2014VS-251NMEB
MRF300AN
Q1
R1
CRCW080533R0FKEA
3224W-1-502E
KOA Speer
Bourns
Vishay
R2
R3
CRCW120612K0FNEA
CRCW120627K0FKEA
CRCW120620K0FKEA
D108224
R4
Vishay
R5, R6
PCB
Vishay
FR4 0.087, = 4.8, 2 oz. Copper
MTL
r
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
7
TYPICAL CHARACTERISTICS — 13.56 MHz
REFERENCE CIRCUIT (MRF300AN)
350
300
250
350
300
250
200
V
DD
= 50 Vdc, f = 13.56 MHz, CW
P
= 0.5 W
in
P
= 0.25 W
in
200
150
150
100
50
100
50
0
V
DD
= 50 Vdc, I = 100 mA, f = 13.56 MHz, CW
DQ
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
, GATE--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (WATTS)
in
GS
f
P1dB
(W)
P3dB
(W)
Figure 4. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
(MHz)
13.56
285
322
Figure 5. CW Output Power versus Input Power
34
100
V
= 50 Vdc, I = 100 mA, f = 13.56 MHz, CW
DQ
DD
33
32
31
30
29
28
90
80
70
60
50
40
G
ps
D
27
26
25
30
20
10
0
24
0
50
100
150
200
250
300
350
P
, OUTPUT POWER (WATTS)
out
Figure 6. Power Gain and Drain Efficiency
versus CW Output Power
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
8
13.56 MHz REFERENCE CIRCUIT (MRF300AN)
f
Z
Z
load
source
(MHz)
13.56
12.0 + j5.2
5.1 – j1.0
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 7. Series Equivalent Source and Load Impedance — 13.56 MHz
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
9
27 MHz REFERENCE CIRCUIT (MRF300AN)
Table 11. 27 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 0.6 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
27
330
27.4
80.0
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
10
27 MHz REFERENCE CIRCUIT (MRF300AN) — 2 3 (5.1 cm 7.6 cm)
R4
C17
R3
R5
C7 C8 C9
R6
D1
J1
JP1
L3
L4
R7
C12
C13
C4
C5
C16
B1
C14
C15
J2
L6
C1
L1
C2
C6
L7
R2
L2
C3
L5
R1
C10
Cꢀ11
Q1
Rev. 0
aaa--034170
Figure 8. MRF300AN 27 MHz Reference Circuit Component Layout
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
11
27 MHz REFERENCE CIRCUIT (MRF300AN)
Table 12. MRF300AN Reference Circuit Component Designations and Values — 27 MHz
Part
Description
Part Number
2743021447
200B393KT50XT
Manufacturer
Fair-Rite
ATC
B1
C1, C5, C7, C16 39,000 pF Chip Capacitor
Long Ferrite Bead
C2
120 pF Chip Capacitor
200 pF Chip Capacitor
1 F Chip Capacitor
GQM2195C2E121GB12D Murata
GQM2195C2A201GB12D Murata
GRM31CR72A105KA01L Murata
C3
C4
C6
27 pF Chip Capacitor
100B270JT500XT
ATC
C8
0.1 F Chip Capacitor
GRM32NR72A104KA01B Murata
GRM32ER61H106KA12L Murata
C9
10 F Chip Capacitor
C10
C11
C12
C13, C14
C15
C17
D1
220 pF Chip Capacitor
120 pF Chip Capacitor
30 pF Chip Capacitor
100B221JT200XT
100B121JT300XT
100B300JT500XT
100B560CT500XT
100B201JT300XT
EEU-FC1J221
ATC
ATC
ATC
56 pF Chip Capacitor
ATC
200 pF Chip Capacitor
220 F, 63 V Electrolytic Capacitor
8.2 V Zener Diode
ATC
Panasonic-ECG
Micro Commercial Components
TE Connectivity
SMAJ4738A--TP
9-146305-0
J1
Right Angle Breakaway Headers (2 Pins)
Jumper
J2
Copper Foil
JP1
L1, L2
L3, L4
L5
Shunt (J1)
382811-8
TE Connectivity
Coilcraft
Coilcraft
Coilcraft
Coilcraft
Coilcraft
NXP
180 nH Chip Inductor
1008CS-181XJLB
1212VS-111MEB
2014VS-33NMEB
2014VS-151MEB
1212VS-90NME
MRF300AN
110 nH Air Core Inductor
33 nH Air Core Inductor
155 nH Air Core Inductor
90 nH Air Core Inductor
RF Power LDMOS Transistor
51 , 1/4 W Chip Resistor
100 , 1/4 W Chip Resistor
12 k, 1/4 W Chip Resistor
27 k, 1/4 W Chip Resistor
20 k, 1/4 W Chip Resistor
5.0 k Multi--turn Cermet Trimmer Potentiometer
L6
L7
Q1
R1
CRCW120651R0FKEA
CRCW1206100RFKEA
CRCW120612K0JNEA
CRCW120627K0FKEA
CRCW120620K0FKEA
3224W-1-502E
Vishay
R2
Vishay
R3
Vishay
R4
Vishay
R5, R6
R7
Vishay
Bourns
MTL
PCB
FR4 0.087, = 4.8, 2 oz. Copper
D108224
r
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
12
TYPICAL CHARACTERISTICS — 27 MHz
REFERENCE CIRCUIT (MRF300AN)
400
350
300
250
200
150
100
50
400
350
V
DD
= 50 Vdc, f = 27 MHz, CW
P
= 0.6 W
in
300
250
200
150
100
50
P
= 0.3 W
in
V
= 50 Vdc, I = 100 mA, f = 27 MHz, CW
DQ
DD
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
P , INPUT POWER (WATTS)
1
1.1
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
in
f
P1dB
(W)
P3dB
(W)
Figure 9. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
(MHz)
27
310
365
Figure 10. CW Output Power versus Input Power
30
90
80
70
V
DD
= 50 Vdc, I = 100 mA, f = 27 MHz, CW
DQ
29
G
ps
28
27
26
25
24
60
50
40
30
D
50
100
150
200
250
300
350
400
P
, OUTPUT POWER (WATTS)
out
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
13
27 MHz REFERENCE CIRCUIT (MRF300AN)
f
Z
Z
load
source
(MHz)
27
32.13 + j11.22
4.47 + j0.45
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 12. Series Equivalent Source and Load Impedance — 27 MHz
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
14
40.68 MHz REFERENCE CIRCUIT (MRF300AN)
Table 13. 40.68 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 0.5 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
40.68
330
28.2
79.0
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
15
40.68 MHz REFERENCE CIRCUIT (MRF300AN) — 2 3 (5.1 cm 7.6 cm)
R6
JP1
R5
R7
R8
J1
D1
C25 C26
J2
C34
R9
C27
C17
C33
C12
C13
B1
L6
C29
C30
L3
J3
C1
C18
R1
C19
C20
C3
L5
R2
L1
C21
C22
R3
Q1
L4
Rev. 0
Note: Component numbers C2, C4–C11, C14–C16, C23, C24, C28, C31, C32,
L2 and R4 are not used.
aaa--030512
Figure 13. MRF300AN 40.68 MHz Reference Circuit Component Layout
MRF300AN MRF300BN
16
RF Device Data
NXP Semiconductors
40.68 MHz REFERENCE CIRCUIT (MRF300AN)
Table 14. MRF300AN Reference Circuit Component Designations and Values — 40.68 MHz
Part
Description
Part Number
Manufacturer
B1
Long Ferrite Bead
2743021447
Fair-Rite
ATC
C1, C13, C17
C3
22,000 pF Chip Capacitor
200 pF Chip Capacitor
1 F Chip Capacitor
ATC200B223KT50XT
GQM2195C2A201GB12D
GRM31CR72A105KA01L
ATC100B680JT500XT
ATC100B201JT300XT
ATC100B221JT200XT
GRM32NR72A104KA01B
GRM32ER61H106KA12L
ATC100B560CT500XT
ATC100B750JT500XT
ATC100B910JT500XT
ATC700B512KT50XT
EEU-FC1J221
Murata
Murata
ATC
C12
C18, C19, C20
C21
C22
C25
C26
C27
C29
C30
C33
C34
D1
68 pF Chip Capacitor
200 pF Chip Capacitor
220 pF Chip Capacitor
0.1 F Chip Capacitor
10 F Chip Capacitor
ATC
ATC
Murata
Murata
ATC
56 pF Chip Capacitor
75 pF Chip Capacitor
ATC
91 pF Chip Capacitor
ATC
5100 pF Chip Capacitor
220 F, 63 V Electrolytic Capacitor
8.2 V Zener Diode
ATC
Panasonic
SMAJ4738A--TP
Micro Commercial Components
TE Connectivity
J1
Right Angle Breakaway Headers (2 Pins)
Jumper
9-146305-0
J2, J3
JP1
Copper Foil
Shunt (J1)
382811-8
TE Connectivity
Coilcraft
Coilcraft
Coilcraft
Coilcraft
Coilcraft
NXP
L1
120 nH Chip Inductor
1008CS-121XJLB
L3
117 nH Air Core Inductor
33 nH Air Core Inductor
108 nH Air Core Inductor
155 nH Air Core Inductor
RF Power LDMOS Transistor
0 , 1/4 W Chip Resistor
100 , 1/4 W Chip Resistor
12 k, 1/4 W Chip Resistor
27 k, 1/4 W Chip Resistor
20 k, 1/4 W Chip Resistor
1212VS-111MEB
L4
2014VS-33NMEB
L5
2014VS-111MEB
L6
2014VS-151MEB
Q1
MRF300AN
R1, R3
R2
CRCW12060000Z0EA
CRCW1206100RFKEA
CRCW120612K0FKEA
CRCW120627K0FKEA
CRCW120620K0FKEA
Vishay
Vishay
R5
Vishay
R6
Vishay
R7, R8
R9
Vishay
5.0 k Multi--turn Cermet Trimmer Potentiometer 3224W-1-502E
FR4 0.087, = 4.8, 2 oz. Copper
D108224
Bourns
MTL
PCB
r
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
17
TYPICAL CHARACTERISTICS — 40.68 MHz
REFERENCE CIRCUIT (MRF300AN)
400
350
300
250
200
150
100
50
400
V
DD
= 50 Vdc, I = 100 mA, f = 40.68 MHz, CW
DQ
V
DD
= 50 Vdc, f = 40.68 MHz, CW
350
300
250
200
150
100
50
P
= 0.5 W
in
P
= 0.25 W
in
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
, GATE--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (WATTS)
in
GS
f
P1dB
(W)
P3dB
(W)
Figure 14. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
(MHz)
40.68
250
340
Figure 15. CW Output Power versus Input Power
35
100
V
= 50 Vdc, I = 100 mA, f = 40.68 MHz, CW
DQ
DD
34
33
32
31
30
29
90
80
70
60
50
40
G
ps
D
28
27
26
30
20
10
0
25
0
50
100
150
200
250
300
350
400
P
, OUTPUT POWER (WATTS)
out
Figure 16. Power Gain and Drain Efficiency
versus CW Output Power
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
18
40.68 MHz REFERENCE CIRCUIT (MRF300AN)
f
Z
Z
load
source
(MHz)
()
()
40.68
7.83 + j13.51
5.34 + j1.03
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 17. Series Equivalent Source and Load Impedance — 40.68 MHz
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
19
50 MHz REFERENCE CIRCUIT (MRF300AN)
Table 15. 50 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 0.6 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
50
320
27.3
73.0
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
20
50 MHz REFERENCE CIRCUIT (MRF300AN) — 2 3 (5.1 cm 7.6 cm)
R5
C16
R4
R6
JP1
C10 Cꢀ11
R7
D1
J1
J2
R8
C12
C5
C15
C3
C4
B1
C13
C14
L2
J3
L5
C1
C6
C7
R1
L4
C2
R2
L1
L3
C8
C9
R3
Q1
Rev. 0
aaa--034173
Figure 18. MRF300AN 50 MHz Reference Circuit Component Layout
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
21
50 MHz REFERENCE CIRCUIT (MRF300AN)
Table 16. MRF300AN Reference Circuit Component Designations and Values — 50 MHz
Part
Description
Part Number
Manufacturer
Fair-Rite
B1
Long Ferrite Bead
2743021447
C1, C4, C5, C15
C2
10,000 pF Chip Capacitor
180 pF Chip Capacitor
1 F Chip Capacitor
200B103KT50XT
GQM2195C2A181GB12D
GRM31CR72A105KA01L
100B560CT500XT
100B680JT500XT
100B181JT300XT
12101C104KAT4A
GRM32ER61H106KA12L
100B820JT500XT
100B111JT300XT
EEU-FC1J221
ATC
Murata
C3
Murata
C6
56 pF Chip Capacitor
ATC
C7, C13
C8, C9
C10
C11
C12
C14
C16
D1
68 pF Chip Capacitor
ATC
180 pF Chip Capacitor
0.1 F Chip Capacitor
ATC
AVX
10 F Chip Capacitor
Murata
82 pF Chip Capacitor
ATC
110 pF Chip Capacitor
220 F, 63 V Electrolytic Capacitor
8.2 V Zener Diode
ATC
Panasonic
SMAJ4738A--TP
9-146305-0
Micro Commercial Components
TE Connectivity
J1
Right Angle Breakaway Headers (2 Pins)
Jumper
J2, J3
JP1
Copper Foil
Shunt (J1)
382811-8
TE Connectivity
Coilcraft
Coilcraft
Coilcraft
Coilcraft
Coilcraft
NXP
L1
82 nH Air Core Inductor
110 nH Air Core Inductor
22 nH Air Core Inductor
90 nH Air Core Inductor
150 nH Air Core Inductor
RF Power LDMOS Transistor
0 , 1/4 W Chip Resistor
100 , 1/4 W Chip Resistor
12 k, 1/4 W Chip Resistor
27 k, 1/4 W Chip Resistor
20 k, 1/4 W Chip Resistor
5.0 k Multi-turn Cermet Trimmer Potentiometer
1812SMS-82NJLC
1212VS-111MEB
1212VS-22NME
L2
L3
L4
1212VS-90NME
L5
2014VS-151MEB
MRF300AN
Q1
R1, R3
R2
CRCW12060000Z0EA
CRCW1206100RFKEA
CRCW120612K0FNEA
CRCW120627K0FKEA
CRCW120620K0FKEA
3224W-1-502E
Vishay
Vishay
R4
Vishay
R5
Vishay
R6, R7
R8
Vishay
Bourns
MTL
PCB
FR4 0.087, = 4.8, 2 oz. Copper
D108224
r
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
22
TYPICAL CHARACTERISTICS — 50 MHz
REFERENCE CIRCUIT (MRF300AN)
400
350
300
250
200
150
100
50
400
V
DD
= 50 Vdc, I = 100 mA, f = 50 MHz, CW
DQ
V
DD
= 50 Vdc, f = 50 MHz, CW
350
300
250
200
150
100
50
P
= 0.6 W
in
P
= 0.3 W
in
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
P , INPUT POWER (WATTS)
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
in
f
P1dB
(W)
P3dB
(W)
Figure 19. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
(MHz)
50
260
340
Figure 20. CW Output Power versus Input Power
90
31
V
DD
= 50 Vdc, I = 100 mA, f = 50 MHz, CW
DQ
30
29
28
80
70
60
50
40
30
G
ps
27
26
D
25
24
20
400
0
50
100
150
200
250
300
350
P
, OUTPUT POWER (WATTS)
out
Figure 21. Power Gain and Drain Efficiency
versus CW Output Power
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
23
50 MHz REFERENCE CIRCUIT (MRF300AN)
f
Z
Z
load
source
(MHz)
50
6.44 + j12.27
5.05 + j1.36
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 22. Series Equivalent Source and Load Impedance — 50 MHz
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
24
81.36 MHz REFERENCE CIRCUIT (MRF300AN)
Table 17. 81.36 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 1 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
81.36
325
25.1
77.5
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
25
81.36 MHz REFERENCE CIRCUIT (MRF300AN) — 2 3 (5.1 cm 7.6 cm)
R4
JP1
R5
R3
C17
C7 C8 C9
R6
D1
J1
J2
R7
C12
C13
C16
C4
C5
L5
B1
C14
C15
L3
J3
C1
C2
L1
L6
C6
C3
R2
L4
L2
C10
Cꢀ11
R1
Q1
Rev. 0
aaa--034174
Figure 23. MRF300AN 81.36 MHz Reference Circuit Component Layout
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
26
81.36 MHz REFERENCE CIRCUIT (MRF300AN)
Table 18. MRF300AN Reference Circuit Component Designations and Values — 81.36 MHz
Part
Description
Part Number
2743021447
700B472KT50XT
Manufacturer
Fair-Rite
ATC
B1
C1, C5, C7, C16 4,700 pF Chip Capacitor
Long Ferrite Bead
C2
120 pF Chip Capacitor
47 pF Chip Capacitor
GQM2195C2E121GB12D Murata
GQM2195C2E470GB12D Murata
GRM31CR72A105KA01L Murata
C3
C4
1 F Chip Capacitor
C6
30 pF Chip Capacitor
100B300JT500XT
ATC
C8
0.1 F Chip Capacitor
GRM32NR72A104KA01B Murata
GRM32ER61H106KA12L Murata
C9
10 F Chip Capacitor
C10
C11
C12
C13
C14
C15
C17
D1
91 pF Chip Capacitor
100B910JT500XT
100B820JT500XT
100B510GT500XT
100B220JT500XT
100B120JT500XT
100B330JT500XT
EEU-FC1J221
ATC
82 pF Chip Capacitor
ATC
51 pF Chip Capacitor
ATC
22 pF Chip Capacitor
ATC
12 pF Chip Capacitor
ATC
33 pF Chip Capacitor
ATC
220 F, 63 V Electrolytic Capacitor
8.2 V Zener Diode
Panasonic
SMAJ4738A--TP
9-146305-0
Micro Commercial Components
TE Connectivity
J1
Right Angle Breakaway Headers (2 Pins)
Jumper
J2, J3
JP1
L1
Copper Foil
Shunt (J1)
382811-8
TE Connectivity
Coilcraft
Coilcraft
Coilcraft
Coilcraft
Coilcraft
NXP
12.3 nH Square Air Core Inductor
19 nH Square Air Core Inductor
117 nH Air Core Inductor
22 nH Air Core Inductor
42 nH Air Core Inductor
RF Power LDMOS Transistor
0 , 1/4 W Chip Resistor
100 , 1/4 W Chip Resistor
12 k, 1/4 W Chip Resistor
27 k, 1/4 W Chip Resistor
20 k, 1/4 W Chip Resistor
5.0 k Multi--turn Cermet Trimmer Potentiometer
0806SQ-12NJL
0806SQ-19NJL
1212VS-111MEB
1212VS-22NMEB
1212VS-42NMEB
MRF300AN
L2
L3
L4
L5, L6
Q1
R1
CRCW12060000Z0EA
CRCW1206100RFKEA
CRCW120612K0JNEA
CRCW120627K0FKEA
CRCW120620K0FKEA
3224W-1-502E
Vishay
R2
Vishay
R3
Vishay
R4
Vishay
R5, R6
R7
Vishay
Bourns
MTL
PCB
FR4 0.087, = 4.8, 2 oz. Copper
D108224
r
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
27
TYPICAL CHARACTERISTICS — 81.36 MHz
REFERENCE CIRCUIT (MRF300AN)
400
350
300
250
200
150
100
50
400
V
DD
= 50 Vdc, I = 100 mA, f = 81.36 MHz, CW
DQ
V
DD
= 50 Vdc, f = 81.36 MHz, CW
350
300
250
200
150
100
50
P
= 1 W
in
P
= 0.5 W
in
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0.2
0.4
0.6
0.8
1
1.2
1.4
V
, GATE--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (WATTS)
in
GS
f
P1dB
(W)
P3dB
(W)
Figure 24. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
(MHz)
81.36
260
335
Figure 25. CW Output Power versus Input Power
29
90
V
DD
= 50 Vdc, I = 100 mA, f = 81.36 MHz, CW
DQ
28
27
80
70
60
50
G
ps
26
25
24
D
40
30
23
0
50
100
150
200
250
300
350
400
P
, OUTPUT POWER (WATTS)
out
Figure 26. Power Gain and Drain Efficiency
versus CW Output Power
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
28
81.36 MHz REFERENCE CIRCUIT (MRF300AN)
f
Z
Z
load
source
(MHz)
81.36
3.86 + j7.90
4.45 + j3.53
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 27. Series Equivalent Source and Load Impedance — 81.36 MHz
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
29
144 MHz REFERENCE CIRCUIT (MRF300AN)
Table 19. 144 MHz Performance (In NXP Reference Circuit, 50 ohm system)
V
= 50 Vdc, I = 100 mA, P = 1.6 W, CW
DD
DQ in
Frequency
(MHz)
P
(W)
G
(dB)
D
(%)
out
ps
144
320
23.0
73.0
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
30
144 MHz REFERENCE CIRCUIT (MRF300AN) — 2 3 (5.1 cm 7.6 cm)
R6
V
DS
JP1
R7
R5
C15
C10 Cꢀ11
R8
D1
J1
J2
R4
C12
C5
C3
C4
C14
C13
B1
L2
J3
L5
C1
R1
J4
L4
C6
C2
R2
L3
C7
L1
C8
C9
R3
Q1
Rev. 0
aaa--034175
Figure 28. MRF300AN 144 MHz Reference Circuit Component Layout
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
31
144 MHz REFERENCE CIRCUIT (MRF300AN)
Table 20. MRF300AN Reference Circuit Component Designations and Values — 144 MHz
Part
Description
Part Number
2743021447
100B102JT50XT
Manufacturer
Fair-Rite
ATC
B1
C1, C4, C5, C14 1,000 pF Chip Capacitor
Long Ferrite Bead
C2
120 pF Chip Capacitor
1 F Chip Capacitor
GQM2195C2A121GB12D Murata
GRM31CR72A105KA01L Murata
C3
C6, C8
C7
30 pF Chip Capacitor
100B300JT500XT
100B5R6CT500XT
100B240JT500XT
ATC
ATC
ATC
5.6 pF Chip Capacitor
C9
24 pF Chip Capacitor
C10
C11
C12
C13
C15
D1
0.1 F Chip Capacitor
GRM32NR72A104KA01B Murata
GRM32ER61H106KA12L Murata
10 F Chip Capacitor
33 pF Chip Capacitor
100B330JT500XT
100B3R9CT500XT
EEU-FC1J221
ATC
3.9 pF Chip Capacitor
ATC
220 F, 63 V Electrolytic Capacitor
8.2 V Zener Diode
Panasonic
SMAJ4738A--TP
9-146305-0
Micro Commercial Components
TE Connectivity
J1
Right Angle Breakaway Headers (2 Pins)
Jumper
J2, J3, J4
JP1
L1
Copper Foil
Shunt (J1)
382811-8
TE Connectivity
Coilcraft
Coilcraft
Coilcraft
Coilcraft
NXP
7.15 nH Air Core Inductor
110 nH Air Core Inductor
22 nH Air Core Inductor
33 nH Air Core Inductor
RF Power LDMOS Transistor
0 , 1/4 W Chip Resistor
100 , 1/4 W Chip Resistor
5.0 k Multi-turn Cermet Trimmer Potentiometer
12 k, 1/4 W Chip Resistor
27 k, 1/4 W Chip Resistor
20 k, 1/4 W Chip Resistor
1606-7JLC
L2
1212VS-111MEB
1212VS-22NME
2014VS-33NME
MRF300AN
L3
L4, L5
Q1
R1, R3
R2
CRCW12060000Z0EA
CRCW1206100RFKEA
3224W-1-502E
CRCW120612K0JNEA
CRCW120627K0JNEA
CRCW120620K0JNEA
D108224
Vishay
Vishay
R4
Bourns
Vishay
R5
R6
Vishay
R7, R8
PCB
Vishay
FR4 0.087, = 4.8, 2 oz. Copper
MTL
r
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
32
TYPICAL CHARACTERISTICS — 144 MHz
REFERENCE CIRCUIT (MRF300AN)
350
350
V
DD
= 50 Vdc, I = 100 mA, f = 144 MHz, CW
DQ
V
DD
= 50 Vdc, f = 144 MHz, CW
300
250
200
150
300
250
200
150
100
50
P
= 1.6 W
in
P
= 0.8 W
in
100
50
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
V
, GATE--SOURCE VOLTAGE (VOLTS)
P , INPUT POWER (WATTS)
in
GS
f
P1dB
(W)
P3dB
(W)
Figure 29. CW Output Power versus
Gate--Source Voltage at a Constant Input Power
(MHz)
144
275
320
Figure 30. CW Output Power versus Input Power
26
80
70
60
50
40
G
ps
25
24
23
22
D
V
= 50 Vdc, I = 100 mA, f = 144 MHz, CW
DQ
DD
30
350
21
50
100
150
200
250
300
P
, OUTPUT POWER (WATTS)
out
Figure 31. Power Gain and Drain Efficiency
versus CW Output Power
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
33
144 MHz REFERENCE CIRCUIT (MRF300AN)
f
Z
Z
load
source
(MHz)
144
1.62 + j6.44
4.32 + j2.06
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 32. Series Equivalent Source and Load Impedance — 144 MHz
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
34
230 MHz FIXTURE (MRF300AN) — 4 5 (10.2 cm 12.7 cm)
C12
C10
C1
C9
C11
C13
C2
C4
B1
C3 C5
cut out
area
L2
MRF300AN
Rev. 0
D110614
R1
C6
C16
C15
C17
C14
L1
C8
C7
aaa--030511
Figure 33. MRF300AN Fixture Component Layout — 230 MHz
Table 21. MRF300AN Fixture Component Designations and Values — 230 MHz
Part
Description
Part Number
Manufacturer
B1
Long Ferrite Bead
2743021447
Fair-Rite
Kemet
TDK
C1
47 F, 16 V Tantalum Capacitor
2.2 F Chip Capacitor
10 nF Chip Capacitor
T491D476K016AT
C2
C3225X7R1H225K250AB
C1210C103J5GACTU
GRM319R72A104KA01D
ATC800B102JT50XT
ATC100B180JT500XT
ATC100B560CT500XT
C1812104K1RACTU
C3225X7R2A225K230AB
HMK432B7225KM-T
MCGPR100V227M16X26
ATC100B1R2BT500XT
ATC100B240JT500XT
ATC800B471JT200XT
1812SMS-47NJLC
C3
Kemet
Murata
ATC
C4
0.1 F Chip Capacitor
1000 pF Chip Capacitor
18 pF Chip Capacitor
C5, C9
C6, C7
C8, C14
C10
C11
C12
C13
C15
C16
C17
L1
ATC
56 pF Chip Capacitor
ATC
0.1 F Chip Capacitor
2.2 F Chip Capacitor
2.2 F Chip Capacitor
220 F, 100 V Electrolytic Capacitor
1.2 pF Chip Capacitor
24 pF Chip Capacitor
Kemet
TDK
Taiyo Yuden
Multicomp
ATC
ATC
470 pF Chip Capacitor
47 nH Air Core Inductor
146 nH Air Core Inductor
470 1/4 W Chip Resistor
ATC
Coilcraft
Coilcraft
Vishay
MTL
L2
1010VS-141NME
R1
CRCW1206470RFKEA
D110614
PCB
Rogers AD255C 0.030, = 2.55, 2 oz. Copper
r
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
35
TYPICAL CHARACTERISTICS — 230 MHz, TC = 25_C
FIXTURE (MRF300AN)
400
V
= 50 Vdc, f = 230 MHz
DD
350
300
250
200
150
100
50
Pulse Width = 100 sec, 20% Duty Cycle
P
= 3.0 W
in
P
= 1.5 W
in
0
0
0.5
1
1.5
2
2.5
3
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 34. Output Power versus Gate--Source
Voltage at a Constant Input Power
57
55
53
51
49
47
45
43
41
39
37
24
100
80
60
40
20
0
V
= 50 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
DD
DD
Pulse Width = 100 sec, 20% Duty Cycle
G
I
= 900 mA
ps
DQ
22
20
18
16
14
600 mA
300 mA
100 mA
900 mA
600 mA
D
300 mA
100 mA
18
21
24
27
30
33
36
39
5
10
100
, OUTPUT POWER (WATTS) PEAK
500
P , INPUT POWER (dBm) PEAK
in
P
out
f
Figure 36. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
P1dB
(W)
P3dB
(W)
(MHz)
230
334
382
Figure 35. Output Power versus Input Power
80
70
60
50
40
23
22
21
20
24
22
20
18
16
V
= 50 Vdc, I = 100 mA, f = 230 MHz
DQ
DD
I
= 100 mA, f = 230 MHz
DQ
Pulse Width = 100 sec, 20% Duty Cycle
Pulse Width = 100 sec, 20% Duty Cycle
G
ps
D
50 V
19
18
17
16
45 V
40 V
35 V
30
20
10
14
12
V
= 30 V
DD
50
, OUTPUT POWER (WATTS) PEAK
0
50
100 150 200
250 300
350 400
450
5
500
P
, OUTPUT POWER (WATTS) PEAK
P
out
out
Figure 38. Power Gain versus Output Power
and Drain--Source Voltage
Figure 37. Power Gain and Drain Efficiency
versus Output Power
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
36
230 MHz FIXTURE (MRF300AN)
f
Z
Z
load
source
(MHz)
230
1.77 + j1.90
2.50 + j0.78
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
50
50
Z
Z
load
source
Figure 39. Series Equivalent Source and Load Impedance — 230 MHz
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
37
PACKAGE DIMENSIONS
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
38
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
39
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
40
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
May 2018
Jan. 2019
Initial release of data sheet
Typical Performance table: added 13.56, 50 and 144 MHz reference circuits and updated 81.36 MHz data,
p. 1
Package photos: added backside photo, p. 1
Table 4, Moisture Sensitivity Level: added footnote “Peak temperature during reflow process must not
exceed 225C.” Updated table, p. 2.
Fig. 1, Capacitance versus Drain--Source Voltage: removed note as not applicable to graph, p. 4
Table 8, 40.68 MHz Performance table; Fig. 5, CW Output Power versus Input Power; and Fig. 6, Power
Gain and Drain Efficiency versus CW Output Power: corrected bias value to 100 mA to reflect actual
measurement used in data sheet, pp. 5, 8
Package Outline Drawing: TO--247--3 package outline updated to Rev. A, pp. 13–15
General updates made to align data sheet to current standard
2
June 2019
Typical Performance table: updated values for 27 MHz, 50 MHz, 81.36 MHz and 144 MHz reference
circuits, p. 1
Added 13.56 MHz reference circuit, pp. 5–9
Added 27 MHz reference circuit, pp. 10–14
Added 50 MHz reference circuit, pp. 20–24
Added 81.36 MHz reference circuit, pp. 25–29
Added 144 MHz reference circuit, pp. 30–34
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
41
How to Reach Us:
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
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NXP makes no warranty, representation, or guarantee regarding the suitability of its
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application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
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E 2018–2019 NXP B.V.
Document Number: MRF300AN
Rev. 2, 06/2019
相关型号：
MRF306
RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, CASE 278-06, 6 PIN
MOTOROLA
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