MRF3106 [TE]
MICROWAVE LINEAR POWER TRANSISTORS; 微波线性功率晶体管
| 型号： | MRF3106 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | MICROWAVE LINEAR POWER TRANSISTORS |
| 文件： | 总4页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF3104/D
The RF Line
M
R
F
3
1
0
4
M
i
c
r
o
w
a
v
e
L
i
n
e
a
r
M
R
F
3
1
0
5
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
s
M
R
F
3
1
0
6
•
•
Designed for Class A, Common Emitter Linear Power Amplifiers.
Specified 20 Volt, 1.6 GHz Characteristics:
MRF3104
MRF3105
MRF3106
8.0–12 dB GAIN
1.55–1.65 GHz
MICROWAVE LINEAR
POWER TRANSISTORS
Output Power
Power Gain
0.5 W
10.5 dB
0.8 W
9 dB
1.6 W
8 dB
•
•
•
Low Parasitic Microwave Stripline Package
Gold Metalization for Improved Reliability
Diffused Ballast Resistors
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Symbol
Value
22
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
50
CES
EBO
V
3.5
Collector Current
MRF3104, MRF3105
MRF3106
I
C
0.4
0.8
CASE 305A–01, STYLE 1
Operating Junction Temperature
Storage Temperature
T
200
°C
°C
j
(.204″ PILL)
T
stg
–65 to +125
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case, DC
MRF3104
MRF3105
MRF3106
R
(DC)
40
35
22
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
BV
BV
BV
BV
22
50
45
3.5
—
—
—
—
—
—
—
—
Vdc
Vdc
CEO
CES
CBO
EBO
(I = 10 mA, I = 0)
C
B
Collector–Emitter Breakdown Voltage
(I = 10 mA, V = 0)
C
BE
Collector–Base Breakdown Voltage
(I = 1 mA, I = 0)
Vdc
C
E
Emitter–Base Breakdown Voltage
(I = 0.25 mA, I = 0)
Vdc
E
C
Collector Cutoff Current
(V = 28 V, I = 0)
MRF3104, MRF3105
MRF3106
I
—
—
—
—
0.25
0.5
mAdc
CBO
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
20
35
120
—
(V = 5.0 V, I = 100 mA)
CE
C
(continued)
REV 6
1
ELECTRICAL CHARACTERISTICS — continued
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance (V = 28 V, I = 0, f = 1.0 MHz)
MRF3104
MRF3105
MRF3106
C
OB
—
—
—
—
—
—
1.5
3.5
5.5
pF
CB
E
FUNCTIONAL TESTS
Common Emitter Amplifier Gain
(V = 20 V, I = 120 mA, P = 0.5 W, f = 1.6 GHz)
Gpe
dB
MRF3104
MRF3105
MRF3106
10.5
9.0
8.0
11.5
10.0
9.0
—
—
—
CE
C
out
(V = 20 V, I = 120 mA, P = 0.8 W, f = 1.6 GHz)
CE
C
out
(V = 20 V, I = 240 mA, P = 1.6 W, f = 1.6 GHz)
CE
C
out
Output Load Mismatch
(V = 20 V, I = 120 mA, P = 0.5 W, f = 1.6 GHz)
No Degradation in
Output Power
MRF3104
MRF3105
MRF3106
—
—
—
CE
C
out
(V = 20 V, I = 120 mA, P = 0.8 W, f = 1.6 GHz)
CE
C
out
(V = 20 V, I = 240 mA, P = 1.6 W, f = 1.6 GHz)
CE
C
out
Gain Linearity
L
G
dB
(V = 20 V, I = 120 mA, f = 1.6 GHz,
CE
C
P
= 0.5 W, P = 0.5 mW)
MRF3104
MRF3105
MRF3106
—
—
—
—
—
—
–0.2 to 1.0
–0.2 to 1.0
–0.2 to 1.0
o1
o2
(V = 20 V, I = 120 mA, f = 1.6 GHz,
CE
C
P
o1
= 0.8 W, P = 0.5 mW)
o2
(V = 20 V, I = 240 mA, f = 1.6 GHz,
CE
C
P
o1
= 1.6 W, P = 0.5 mW)
o2
TYPICAL CHARACTERISTICS
MRF3104
1
1
.
.
5
0
F
r
e
q
=
1
.
6
G
=
H
z
,
1
2
I
0
m A
C
V
=
E
2
0
V
C
1
5
V
1
0
V
0
0
.
5
0
.
0
1
00
2
0
0
P
i
,
n
I
N
P
U
T
P
O
WE
R
(
m
W)
Figure 1. Output Power versus Input Power
S11
S21
S12
S22
V
CE
I
C
f
Mag
Deg
Mag
Deg
Mag
Deg
Mag
Deg
(V)
(mA)
(MHz)
20
120
1550
1575
1600
1625
1650
0.75
0.76
0.76
0.76
0.76
123
123
122
122
121
1.97
1.93
1.91
1.80
1.85
21
20
19
18
17
0.08
0.09
0.09
0.09
0.09
44
44
43
42
42
0.31
0.32
0.32
0.32
0.33
–113
–115
–116
–117
–119
Table 1. Common Emitter S–Parameters
REV 6
2
TYPICAL CHARACTERISTICS — continued
MRF3105
1
1
0
0
.
.
.
.
2
0
8
6
V
=
E
2
0
V
F
r
e
q
=
1
.
6
G
=
H
z
,
1
2
I
0
m
A
C
C
1
5
V
1
0
V
0
0
.
4
2
.
0. 0
0
1
00
2 00
P
i
,
n
I
N
P
U
T
P
O
W
E
R
(m W)
Figure 2. Output Power versus Input Power
S11
S21
S12
S22
V
(V)
I
f
CE
C
Mag
Deg
Mag
Deg
Mag
Deg
Mag
Deg
(mA)
(MHz)
20
120
1550
1575
1600
1625
1650
0.75
0.75
0.75
0.75
0.75
139
138
137
137
136
1.49
1.46
1.44
1.42
1.39
19
18
17
15
14
0.09
0.10
0.10
0.10
0.10
44
43
43
43
42
0.42
0.42
0.43
0.43
0.44
–124
–126
–127
–129
–130
Table 2. Common Emitter S–Parameters
MRF3106
3
F
r
e
q
=
1
.
6
G
C
H
z
=
,
I
2
40
m
A
V
C
=
2
0
V
E
2
1
0
1
5
V
1
0
V
0
1
00
2
00
3
0
0
4
0
0
P
i
,
n
I
N
P
U
T
P
O
WE
R
(
m
W)
Figure 3. Output Power versus Input Power
S11
S21
S12
S22
V
(V)
I
f
CE
C
Mag
Deg
Mag
Deg
Mag
Deg
Mag
Deg
(mA)
(MHz)
20
240
1550
1575
1600
1625
1650
0.97
0.97
0.96
0.96
0.95
145
143
142
140
139
0.78
0.78
0.77
0.76
0.75
11
10
9
8
7
0.20
0.17
0.16
0.14
0.12
–130
–104
–104
–104
–104
0.56
0.56
0.56
0.56
0.56
169
168
166
165
164
Table 3. Common Emitter S–Parameters
REV 6
3
PACKAGE DIMENSIONS
N O TE S :
1. D I MEN S IO N I N G A ND TO LE R AN C I N G P ER AN S I
Y 14. 5M, 198 2.
M
2. C O N TR O LL IN G D I MEN S I ON : I N CH .
K
INCHES
DIM MIN MAX
MILLIMETERS
D
MIN
5. 08
2. 41
1. 40
0. 64
1. 02
0. 08
11. 05
MAX
5. 59
3. 30
1. 65
0. 89
1. 27
0. 18
---
4
2
A
C
D
F
0. 200
0. 095
0. 055
0. 025
0. 040
0. 003
0. 435
0. 220
0. 130
0. 065
0. 035
0. 050
0. 007
---
1
3
H
J
K
M
45ꢀ ꢀ ꢀR E F
_
45ꢀ ꢀ ꢀR E F
_
F
S TY LE 1:
P IN 1. E MIT T ER
2. B AS E
3. E MIT T ER
4. C O LLE C TO R
A
J
C
H
CASE 305A–01
ISSUE A
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 6
4
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