MRF313 [TE]
HIGH-FREQUENCY TRANSISTOR NPN SILICON; 高频三极管NPN硅
| 型号： | MRF313 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | HIGH-FREQUENCY TRANSISTOR NPN SILICON |
| 文件： | 总3页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF313/D
The RF Line
NP N S ilic on
H ig h- F re qu enc y Tra n sis t or
. . . designed for wideband amplifier, driver or oscillator applications in military,
mobile, and aircraft radio.
M
R
F
3
1
3
•
Specified 28 Volt, 400 MHz Characteristics —
Output Power = 1.0 Watt
1.0 W, 400 MHz
HIGH–FREQUENCY
TRANSISTOR
Power Gain = 15 dB Min
Efficiency = 45% Typ
•
•
Emitter Ballast and Low Current Density for Improved MTBF
Common Emitter for Improved Stability
NPN SILICON
CASE 305A–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
30
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
40
Vdc
3.0
Vdc
Collector Current — Continuous
I
C
150
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
6.1
35
Watts
mW/°C
C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
28.5
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I = 10 mAdc, I = 0)
V
(BR)CEO
30
35
35
3.0
—
—
—
—
—
—
—
—
Vdc
Vdc
C
B
Collector–Emitter Breakdown Voltage (I = 5.0 mAdc, V = 0)
V
C
BE
(BR)CES
(BR)CBO
(BR)EBO
Collector–Base Breakdown Voltage (I = 0.1 mAdc, I = 0)
V
V
—
Vdc
C
E
Emitter–Base Breakdown Voltage (I = 1.0 mAdc, I = 0)
—
Vdc
E
C
Collector Cutoff Current (V = 20 Vdc, I = 0)
I
CEO
1.0
mAdc
(continued)
CE
B
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain (I = 100 mAdc, V = 10 Vdc)
h
FE
20
60
150
—
C
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
—
—
2.5
3.5
—
GHz
pF
T
(I = 100 mAdc, V = 20 Vdc, f = 200 MHz)
C
CE
Output Capacitance
C
5.0
ob
(V = 28 Vdc, I = 0, f = 1.0 MHz)
CB
E
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (1)
G
15
—
—
—
16
45
—
—
—
—
dB
%
pe
(V = 28 Vdc, P = 1.0 W, f = 400 MHz)
CC
out
Collector Efficiency
η
(V = 28 Vdc, P = 1.0 W, f = 400 MHz)
CC
out
Series Equivalent Input Impedance
(V = 28 Vdc, P = 1.0 W, f = 400 MHz)
Z
6.4 – j4.8
75 – j45
Ohms
Ohms
in
CC
out
Series Equivalent Output Impedance
(V = 28 Vdc, P = 1.0 W, f = 400 MHz)
Z
out
CC
out
NOTE:
1. Class C
L
4
C
7
C8
+
+
+
ā
8
V
C
6
C
9
-
L
3
C
5
R
F
Z
2
Z
3
C
2
O
U
T
P
U
T
R
F
Z
1
D
U
T
I
N
P
U
T
L
1
C
3
C
4
C
1
L
2
R
C1, C2, C4 — 1.0–20 pF JOHANSON 9063
C3 — 1.0–10 pF JOHANSON
C5 — 150 pF Chip
L1, L3 — 5 Turns, AWG #20, 1/4″ I.D.
L2 — Ferrite Bead, FERROXCUBE
L2 — No. 56–590–65/4B
R — 4.7 Ohms, 1/4 W
Z1 — 2.0″ x 0.1″ MICROSTRIP LINE
Z2, Z3 — 2.6″ x 0.1″ MICROSTRIP LINE
C6 — 0.1 µF
L4 — FERROXCUBE VK200–20/4B
C7, C8 — 680 pF Feedthru
C9 — 1.0 µF TANTALUM
L4 — Input/Output Connectors — Type N
Board — Glass Teflon, ε = 2.56, t = 0.062″
Figure 1. 400 MHz Power Gain Test Circuit
2
PACKAGE DIMENSIONS
N O TE S :
1. D I MEN S IO N I N G A ND TO LE R AN C I N G P ER AN S I
Y 14. 5M, 198 2.
M
2. C O N TR O LL IN G D I MEN S I ON : I N CH .
K
INCHES
DIM MIN MAX
MILLIMETERS
D
MIN
5. 08
2. 41
1. 40
0. 64
1. 02
0. 08
11. 05
MAX
5. 59
3. 30
1. 65
0. 89
1. 27
0. 18
---
4
2
A
C
D
F
0. 200
0. 095
0. 055
0. 025
0. 040
0. 003
0. 435
0. 220
0. 130
0. 065
0. 035
0. 050
0. 007
---
1
3
H
J
K
M
45ꢀ ꢀ ꢀR E F
_
45ꢀ ꢀ ꢀR E F
_
F
S TY LE 1:
P IN 1. E MIT T ER
2. B AS E
3. E MIT T ER
A
J
4. C O LLE C TO R
C
H
CASE 305A–01
ISSUE A
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
3
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