MRFE6VP5150GNR1 [NXP]
RF Power LDMOS Transistors;
| 型号： | MRFE6VP5150GNR1 |
| 厂家： | 
NXP |
| 描述： | RF Power LDMOS Transistors |
| 文件： | 总25页 (文件大小：1062K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRFE6VP5150N
Rev. 1, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
MRFE6VP5150NR1
MRFE6VP5150GNR1
These high ruggedness devices are designed for use in high VSWR
industrial (including laser and plasma exciters), broadcast (analog and digital),
aerospace and radio/land mobile applications. They are unmatched input and
output designs allowing wide frequency range utilization, between 1.8 and
600 MHz.
1.8–600 MHz, 150 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance: VDD = 50 Vdc
P
(W)
Frequency
(MHz)
G
D
out
ps
Signal Type
(dB)
22.5
26.3
26.1
(%)
74.6
72.0
70.3
TO--270WB--4
PLASTIC
MRFE6VP5150NR1
(1,3)
87.5–108
CW
CW
179
150
(2)
230
230
(2)
Pulse
150 Peak
(100 sec, 20%
Duty Cycle)
Load Mismatch/Ruggedness
Frequency
TO--270WBG--4
PLASTIC
MRFE6VP5150GNR1
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(1)
98
CW
> 65:1
at all Phase
Angles
3.0
(3 dB
Overdrive)
50
No Device
Degradation
(2)
230
Pulse
(100 sec, 20%
Duty Cycle)
0.62 Peak
(3 dB
Overdrive)
Drain A
Drain B
3
4
2
1
Gate A
Gate B
1. Measured in 87.5–108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Features
Wide Operating Frequency Range
Extreme Ruggedness
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated Stability Enhancements
Low Thermal Resistance
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Integrated ESD Protection Circuitry
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
Freescale Semiconductor, Inc., 2014. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +133
–6.0, +10
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
T
J
C
Total Device Dissipation @ T = 25C
P
952
W
C
D
Derate above 25C
4.76
W/C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.21
C/W
JC
CW: Case Temperature 80C, 150 W CW, 50 Vdc, I
= 100 mA, 230 MHz
DQ(A+B)
Thermal Impedance, Junction to Case
Z
0.04
C/W
JC
Pulse: Case Temperature 66C, 150 W Peak, 100 sec Pulse Width,
20% Duty Cycle, 50 Vdc, I = 100 mA, 230 MHz
DQ(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2, passes 2500 V
B, passes 250 V
IV, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Gate--Source Leakage Current
I
—
133
—
—
139
—
1
—
5
Adc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 50 mAdc)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
Adc
Adc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
—
10
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(4)
Gate Threshold Voltage
(V = 10 Vdc, I = 480 Adc)
V
V
1.8
2.3
—
2.4
2.8
2.8
3.3
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 100 mAdc, Measured in Functional Test)
DD
D
(4)
Drain--Source On--Voltage
(V = 10 Vdc, I = 1 Adc)
V
0.26
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
0.8
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
45.4
96.7
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I
= 100 mA, P = 150 W Peak (30 W Avg.),
DQ(A+B) out
DD
f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain
G
25.0
68.0
—
26.1
70.3
–16
27.5
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
IRL
= 100 mA
–9
dB
Load Mismatch/Ruggedness (In Freescale Test Fixture) 50 ohm system, I
DQ(A+B)
Frequency
P
in
(MHz)
Signal Type
VSWR
(W)
Test Voltage, V
Result
No Device Degradation
DD
230
Pulse
> 65:1
0.62 Peak
50
(100 sec, 20% Duty Cycle) at all Phase Angles (3 dB Overdrive)
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
1.06
1.05
300
100
V
= 50 Vdc
DD
C
300 mA
800 mA
iss
1.04
1.03
1.02
1.01
1
0.99
0.98
0.97
I
= 100 mA
DQ(A+B)
C
oss
10
1
1300 mA
C
rss
0.96
0.95
0.94
Measured with 30 mV(rms)ac @ 1 MHz
V
= 0 Vdc
GS
0.1
-- 5 0
--25
0
25
50
75
100
0
10
V
20
30
40
50
T , CASE TEMPERATURE (C)
, DRAIN--SOURCE VOLTAGE (VOLTS)
C
DS
Note: Each side of device measured separately.
I
(mA)
Slope (mV/C)
DQ
100
–2.466
–2.058
–2.015
–1.877
Figure 2. Capacitance versus Drain--Source Voltage
300
800
1300
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
8
10
V
= 50 Vdc
DD
I
D
= 3.36 Amps
7
10
10
6
4.14 Amps
4.97 Amps
5
10
10
4
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 4. MTTF versus Junction Temperature -- CW
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
4
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
C3 C5
C29
C27
MRFE6VP5150N
Rev. 2
C23
C21
B1
C7
C1
D57619
C25
L1
C12
COAX3
COAX1
L3
C16
C14
C9
C10
C18
C19
C20
C11
C31
C15
C17
COAX4
C28
L4
COAX2
C13
L2
C26
C2
C22
B2
C24
C8
C30
C4 C6
Figure 5. MRFE6VP5150NR1 Narrowband Test Circuit Component Layout — 230 MHz
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
Table 6. MRFE6VP5150NR1 Narrowband Test Circuit Component Designations and Values — 230 MHz
Part
Description
Part Number
Manufacturer
B1, B2
C1, C2
Small Ferrite Beads, Surface Mount
2743019447
Fair-Rite
22 F, 35 V Tantalum Capacitors
0.1 F Chip Capacitors
220 nF Chip Capacitors
2.2 F Chip Capacitors
2.2 pF Chip Capacitor
T491X226K035AT
CDR33BX104AKWS
C1812C224K5RACTU
C1825C225J5RACTU
ATC100B2R2JT500XT
ATC100B180JT500XT
ATC100B331JT200XT
ATC100B390JT500XT
ATC100B150JT500XT
ATC100B102JT50XT
ATC100B820JT500XT
C1812F104K1RACTU
2225X7R225KT3AB
MCGPR63V477M13X26-RH
ATC100B360JT500XT
UT-141C-25
Kemet
AVX
C3, C4, C23, C24
C5, C6
Kemet
Kemet
ATC
C7, C8
C9
C10, C11
C12, C13
C14, C15
C16, C17
C18, C19
C20
18 pF Chip Capacitors
ATC
330 pF Chip Capacitors
39 pF Chip Capacitors
ATC
ATC
15 pF Chip Capacitors
ATC
1000 pF Chip Capacitors
82 pF Chip Capacitor
ATC
ATC
C21, C22
C25, C26
C27, C28, C29, C30
C31
0.10 F Chip Capacitors
2.2 F Chip Capacitors
470 F, 63 V Electrolytic Capacitors
36 pF Chip Capacitor
Kemet
ATC
Multicomp
ATC
Coax1, 2, 3, 4
L1, L2
25 SemiRigid Coax, 2.4
3 Turns, 12 nH Inductors
4 Turns, 17.5 nH Inductors
Micro-Coax
Coilcraft
Coilcraft
MTL
GA3094-ALC
L3, L4
GA3095-ALC
PCB
Arlon AD255A, 0.030, = 2.55
D57619
r
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
6
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
TYPICAL CHARACTERISTICS — 230 MHz
180
160
V
= 50 Vdc, f = 230 MHz
DD
Pulse Width = 100 sec, 20% Duty Cycle
140
120
100
80
P
= 0.34 W
in
60
40
20
0
P
= 0.17 W
in
0
0.5
1
1.5
2
2.5
3
3.5
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 7. Output Power versus Gate--Source
Voltage at a Constant Input Power
54
52
50
48
46
44
42
40
90
80
70
60
50
40
30
20
10
31
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
DD
DQ(A+B)
Pulse Width = 100 sec, 20% Duty Cycle
30
29
D
I
= 900 mA
DQ(A+B)
28
27
26
25
24
23
600 mA
300 mA
900 mA
600 mA
100 mA
38
36
34
300 mA
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
DD
DQ(A+B)
G
ps
100 mA
Pulse Width = 100 sec, 20% Duty Cycle
12
14
16
18
20
22
24
26
28
30
32
10
100
, OUTPUT POWER (WATTS) PEAK
300
P , INPUT POWER (dBm)
P
in
out
f
Figure 9. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
P1dB
(W)
P3dB
(W)
(MHz)
230
159
182
Figure 8. Output Power versus Input Power
29
28
27
26
25
24
29
28
27
26
90
80
70
60
50
40
30
20
10
I
= 100 mA, f = 230 MHz
V
= 50 Vdc, I
= 100 mA, f = 230 MHz
-- 4 0 _C
DQ(A+B)
DD
DQ(A+B)
Pulse Width = 100 sec, 20% Duty Cycle
Pulse Width = 100 sec, 20% Duty Cycle
25_C
25
24
T
= --40_C
C
85_C
23
22
21
20
19
50 V
23
22
21
45 V
25_C
85_C
G
ps
40 V
D
V
= 30 V
50
35 V
100
DD
0
150
200
1
10
, OUTPUT POWER (WATTS) PEAK
300
100
P
, OUTPUT POWER (WATTS) PEAK
P
out
out
Figure 11. Power Gain versus Output Power
and Drain--Source Voltage
Figure 10. Power Gain and Drain Efficiency
versus Output Power
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
8
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
V
= 50 Vdc, I = 100 mA, P = 150 W Peak
DQ(A+B) out
DD
f
Z
Z
load
source
MHz
230
6.2 + j17.7
12.1 + j12.5
Z
Z
= Test circuit impedance as measured from
gate to gate, balanced configuration.
source
= Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
load
Z
Z
source
Figure 12. Narrowband Series Equivalent Source and Load Impedance — 230 MHz
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 8. 87.5–108 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
V
= 50 Vdc, I
= 100 mA, P = 1.5 W
DQ(A+B) in
DD
f
G
D
P
out
ps
Signal Type
(MHz)
(dB)
22.7
22.8
22.5
(%)
74.6
77.1
77.8
(W)
187
191
179
CW
87.5
98
108
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit, 50 ohm system) I
= 100 mA
DQ(A+B)
Frequency
(MHz)
P
in
(W)
Signal Type
VSWR
Test Voltage, V
Result
DD
98
CW
> 65:1
3.0
50
No Device
at all Phase Angles
(3 dB Overdrive)
Degradation
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
10
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
C1*
R5*
R7*
R4*
R3*
R6*
R9*
C7
C13
C11
R10*
C3*
R8*
C12
L2
C14 C6
+
U1*
U2*
D58764
L1
C2*
R1*
R2*
L3
C8
Q1
T1
C4
C10
C9
C5
COAX1
MRFE6VP5150N
Rev. 0
* Bias Regulator and Temperature Compensation. Refer to AN1643, RF LDMOS Power Modules for GSM Base Station
Application: Optimum Biasing Circuit. Go to http://www.freescale.com/rf. Select Documentation/Application Notes – AN1643.
Figure 13. MRFE6VP5150NR1 Broadband Reference Circuit Component Layout — 87.5–108 MHz
MRFE6VP5150NR1 MRFE6VP5150GNR1
11
RF Device Data
Freescale Semiconductor, Inc.
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 10. MRFE6VP5150NR1 Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz
Part
Description
Part Number
Manufacturer
C1, C2
C3
1 F Chip Capacitors
GRM21BR71H105KA12L
Murata
10 nF Chip Capacitor
ATC200B103KT50XT
ATC200B102KT50XT
ATC100B430JT500XT
C5750X7S2A106M230KB
MCGPR63V477M13X26RH
ATC100B100JT500XT
GRM319R72A103KA01D
GRM31MR72A473KA01L
GRM31MR72A474KA35L
HSF-141C-35
ATC
C4, C8, C9
C5
1000 pF Chip Capacitors
ATC
43 pF Chip Capacitor
ATC
C6, C14
C7
10 F Chip Capacitors
TDK
470 F, 63 V Electrolytic Capacitor
10 pF Chip Capacitor
Multicomp
ATC
C10
C11
C12
C13
Coax1
L1
10 nF Chip Capacitor
Murata
47 nF Chip Capacitor
Murata
470 nF Chip Capacitor
Murata
35 Flex Cable, 11.02, 3 Turns
47 nH Inductor
Hongsen Cable
Coilcraft
Ferronics/Beldon
Freescale
Vishay
1812SMS47NJLC
L2, L3
Q1
Toroid Core, 10 Turns, 22 AWG Magnetic Wire
RF Power LDMOS Transistor
2.2 K, 1/8 W Chip Resistor
390 , 1/8 W Chip Resistor
10 , 1/8 W Chip Resistor
1.0 K, 1/8 W Chip Resistor
2.7 K, 1/8 W Chip Resistor
200 , 1/8 W Chip Resistor
5.0 K Multi-turn Cermet Trimmer Potentiometer
10 , 1/4 W Chip Resistor
5.1 K, 1/2 W Chip Resistors
11-750-K / 8077
MRFE6VP5150NR1
CRCW08052K20FKEA
CRCW0805390RFKEA
RK73H2ATTD10R0F
RR1220P-102-D
R1
R2
Vishay
R3
KOA Speer
Susumu
Vishay
R4
R5
CRCW08052K70FKEA
CRCW0805200RFKEA
3224W-1-502E
R6
Vishay
R7
Bourns
Vishay
R8
CRCW120610R0FKEA
CRCW12105K10FKEA
2861000102
R9, R10
T1
Vishay
61 Material Binocular Core Ferrite (1:1) with
24 AWG 1 Turn Primary, 24 AWG 1 Turn
Secondary, Hand Wound
Fair-Rite
U1
Voltage Regulator 5 V, Micro8
NPN Bipolar Transistor
LP2951ACDMR2G
BC847ALT1G
D58764
ON Semiconductor
ON Semiconductor
MTL
U2
PCB
Rogers RO4350B, 0.030, = 3.66
r
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
12
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
TYPICAL CHARACTERISTICS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
25
90
80
V
= 50 Vdc, P = 1.0 W, I
= 100 mA
DD
in
DQ(A+B)
24.5
24
D
70
23.5
23
60
50
22.5
22
40
G
ps
200
175
21.5
21
P
out
150
20.5
20
125
100
86 88 90 92 94 96 98 100 102 104 106 108 110
f, FREQUENCY (MHz)
Figure 15. Power Gain, Drain Efficiency and CW Output
Power versus Frequency at a Constant Input Power
200
150
200
V
P
= 50 Vdc
V
P
= 50 Vdc
DD
= 0.5 W
in
DD
in
= 0.25 W
150
100
50
f = 108 MHz
100
50
f = 108 MHz
98 MHz
98 MHz
87.5 MHz
2.5
87.5 MHz
0
0
0
0.5
1
1.5
V , GATE--SOURCE VOLTAGE (VOLTS)
GS
2
2.5
3
3.5
0
0.5
1
1.5
2
3
3.5
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 16. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
Figure 17. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
14
TYPICAL CHARACTERISTICS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
54
52
50
f = 108 MHz
98 MHz
48
87.5 MHz
46
V
= 50 Vdc
DD
l
= 100 mA
DQ(A+B)
44
20
22
24
26
28
30
P , INPUT POWER (dBm)
in
f
P1dB
(W)
P3dB
(W)
(MHz)
87.5
98
164
145
130
189
183
165
108
Figure 18. CW Output Power versus Input Power
90
30
28
26
24
22
80
70
60
50
40
30
D
f = 108 MHz
108 MHz
98 MHz
87.5 MHz
G
ps
98 MHz
20
18
87.5 MHz
V
= 50 Vdc, l
100
= 100 mA
DQ(A+B)
DD
30
200
P
, OUTPUT POWER (WATTS)
out
Figure 19. Power Gain and Drain Efficiency
versus CW Output Power
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Z = 50
o
Z
f = 108 MHz
source
f = 87.5 MHz
f = 87.5 MHz
Z
load
f = 108 MHz
V
= 50 Vdc, I = 100 mA, P = 150 W CW
DQ(A+B) out
DD
f
Z
Z
load
source
MHz
87.5
92
20.3 + j26.9
20.4 + j29.6
20.6 + j31.9
20.8 + j34.1
21.0 + j36.5
21.4 + j38.6
35.3 + j15.9
35.2 + j17.1
35.1 + j17.3
33.2 + j17.4
31.7 + j19.5
30.6 + j21.4
96
100
104
108
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured
from drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
50
50
--
+
Z
Z
source
load
Figure 20. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
16
HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
10
0
1 [T1] 100 MHz
1
1 [T1] 100 MHz --39.8 dB
2 [T1] 200 MHz --20.1 dB
-- 1 0
H3
H4
H5
H2
(200 MHz)
3 [T1] 300 MHz --45.5 dB
2
(300 MHz) (400 MHz) (500 MHz)
-- 2 0
-- 3 0
-- 4 0
4 [T1] 400 MHz --35.6 dB
--39.8 dB
--20.1 dB --45.5 dB --35.6 dB
4
1
3
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 9 0
Start 0 Hz
60 Hz
Stop 600 Hz
Figure 21. 100 MHz Harmonics @ 150 W
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
PACKAGE DIMENSIONS
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
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MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
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MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
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MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
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MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
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MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1643: RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
May 2014
July 2014
Initial Release of Data Sheet
Table 10, Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz: updated
R2, R9 and R10 resistors, p. 12
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
24
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Document Number: MRFE6VP5150N
Rev. 1, 7/2014
相关型号：
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