NTB0101AGWH [NXP]
NTB0101A - Auto direction sensing dual supply TSSOP 6-Pin;型号: | NTB0101AGWH |
厂家: | NXP |
描述: | NTB0101A - Auto direction sensing dual supply TSSOP 6-Pin 光电二极管 接口集成电路 |
文件: | 总19页 (文件大小:394K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTB0101A
Auto direction sensing dual supply
Rev. 1 — 14 July 2015
Product data sheet
1. General description
The NTB0101A is a 1-bit, dual supply translating transceiver with auto direction sensing,
that enables bidirectional voltage level translation. It consists of two 1-bit I/O ports (A and
B), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A) can be
supplied at any voltage between 1.2 V and 3.6 V. VCC(B) can be supplied at any voltage
between 1.65 V and 5.5 V. This flexibility allows translation between any of the low voltage
nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V).
Pins A and OE are referenced to VCC(A) and pin B is referenced to VCC(B). A HIGH level at
pin OE causes the outputs to assume a high-impedance OFF-state. This device is fully
specified for partial power-down applications using IOFF. The IOFF circuitry disables the
output, preventing damage of the device due to backflow current, when it is powered
down.
2. Features and benefits
Wide supply voltage range:
VCC(A): 1.2 V to 3.6 V and VCC(B): 1.65 V to 5.5 V
IOFF circuitry provides partial power-down mode operation
Inputs accept voltages up to 5.5 V
ESD protection:
HBM JESD22-A114E Class 2 exceeds 2500 V for port A
HBM JESD22-A114E Class 3B exceeds 15000 V for port B
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1500 V
Latch-up performance exceeds 100 mA per JESD 78B Class II
Specified from 40 C to +85 C and 40 C to +125 C
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
3. Ordering information
Table 1.
Ordering information
Type number Package
Name
Description
Version
NTB0101AGW SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 2.
Marking codes
Type number
Marking code[1]
NTB0101AGW
tL
[1] The pin 1 indicator is on the lower left corner of the device, below the marking code.
5. Functional diagram
5
3
OE
A
4
B
V
CC(A)
V
CC(B)
aaa-017137
Fig 1. Logic symbol
6. Pinning information
6.1 Pinning
NTB0101A
1
2
3
6
5
4
V
V
CC(B)
CC(A)
GND
OE
B
A
aaa-017138
Fig 2. Pin configuration SOT363
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
2 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
6.2 Pin description
Table 3.
Symbol
VCC(A)
GND
A
Pin description
Pin
1
Description
supply voltage A
ground (0 V)
2
3
data input or output (referenced to VCC(A)
data input or output (referenced to VCC(B)
)
)
B
4
OE
5
output enable input (active LOW; referenced to VCC(A)
supply voltage B
)
VCC(B)
6
7. Functional description
Table 4.
Function table[1]
Supply voltage
VCC(A)
Input
OE
H
Input/output
VCC(B)
A
B
1.2 V to VCC(B)
1.2 V to VCC(B)
GND[2]
1.65 V to 5.5 V
1.65 V to 5.5 V
GND[2]
Z
Z
L
input or output
Z
output or input
Z
X
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
[2] When either VCC(A) or VCC(B) is at GND level, the device goes into power-down mode.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
VCC(A)
VCC(B)
VI
Parameter
Conditions
Min
0.5
0.5
0.5
0.5
0.5
50
50
-
Max
+6.5
+6.5
+6.5
VCCO + 0.5
+6.5
-
Unit
V
supply voltage A
supply voltage B
input voltage
V
[1]
[1][2][3]
[1]
V
VO
output voltage
active mode
V
power-down or 3-state mode
VI < 0 V
V
IIK
input clamping current
output clamping current
output current
mA
mA
mA
mA
mA
C
mW
IOK
IO
VO < 0 V
-
[2]
VO = 0 V to VCCO
ICC(A) or ICC(B)
50
100
-
ICC
IGND
Tstg
Ptot
supply current
-
ground current
100
65
-
storage temperature
total power dissipation
+150
250
[4]
Tamb = 40 C to +125 C
[1] If the input and output current ratings are observed, the minimum input and minimum output voltage ratings may be exceeded.
[2] VCCO is the supply voltage associated with the output.
[3]
VCCO + 0.5 V should not exceed 6.5 V.
[4] Above 87.5 C, the value of Ptot derates linearly with 4.0 mW/K.
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
3 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
9. Recommended operating conditions
Table 6.
Symbol
VCC(A)
VCC(B)
VI
Operating conditions[1][2]
Parameter
Conditions
Min
1.2
1.65
0
Max
3.6
Unit
V
supply voltage A
supply voltage B
input voltage
5.5
V
5.5
V
VO
output voltage
power-down or 3-state mode;
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
port A
port B
0
3.6
V
0
5.5
V
Tamb
ambient temperature
40
+125
40
C
ns/V
t/V
input transition rise and fall
rate
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
[1] The A and B sides of an unused I/O pair must be held in the same state, both at VCCI or GND.
[2] VCC(A) must be less than or equal to VCC(B)
.
10. Static characteristics
Table 7.
Typical static characteristics
At recommended operating conditions; Tamb = 25 C; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VOH
VOL
II
HIGH-level
output voltage
port A; VCC(A) = 1.2 V; IO = 20 A
-
1.1
-
V
LOW-level
output voltage
port A; VCC(A) = 1.2 V; IO = 20 A
-
-
-
-
-
-
0.09
-
V
input leakage
current
OE input; VI = 0 V to 3.6 V; VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
1
1
1
1
-
A
A
A
A
pF
[1]
IOZ
IOFF
OFF-stateoutput port A or B; VO = 0 V to VCCO; VCC(A) = 1.2 V to 3.6 V;
current
-
VCC(B) = 1.65 V to 5.5 V
power-off
port A; VI or VO = 0 V to 3.6 V;
-
leakage current VCC(A) = 0 V; VCC(B) = 0 V to 5.5 V
port B; VI or VO = 0 V to 5.5 V;
-
V
CC(B) = 0 V; VCC(A) = 0 V to 3.6 V
CI
input
OE input; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V
1.0
capacitance
CI/O
input/output
capacitance
port A; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V
port B; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V
-
-
4.0
7.5
-
-
pF
pF
[1] VCCO is the supply voltage associated with the output.
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
4 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
Table 8.
Typical supply current
At recommended operating conditions; Tamb = 25 C; voltages are referenced to GND (ground = 0 V).
VCC(A)
VCC(B)
1.8 V
ICC(A)
10
Unit
2.5 V
ICC(A)
10
3.3 V
ICC(A)
10
5.0 V
ICC(A)
10
ICC(B)
10
10
10
-
ICC(B)
10
10
10
10
-
ICC(B)
20
ICC(B)
1050
650
350
40
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
nA
nA
nA
nA
nA
10
10
10
10
10
10
10
10
10
10
-
10
10
10
10
-
-
-
10
10
10
10
Table 9.
Static characteristics[1]
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Tamb = 40 C to +85 C Tamb = 40 C to +125 C Unit
Min
Max
Min
Max
VIH
VIL
HIGH-level
input voltage VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
port A or port B and OE input;
0.65VCCI
-
0.65VCCI
-
V
V
LOW-level
port A or port B and OE input;
-
0.35VCCI
-
0.35VCCI
input voltage VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
VOH
HIGH-level
output
voltage
IO = 20 A
port A; VCC(A) = 1.4 V to 3.6 V
port B; VCC(B) = 1.65 V to 5.5 V
IO = 20 A
VCCO 0.4
VCCO 0.4
-
-
VCCO 0.4
VCCO 0.4
-
-
V
V
VOL
LOW-level
output
voltage
port A; VCC(A) = 1.4 V to 3.6 V
port B; VCC(B) = 1.65 V to 5.5 V
-
-
-
0.4
0.4
2
-
-
-
0.4
0.4
5
V
V
II
inputleakage OE input; VI = 0 V to 3.6 V;
A
current
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
IOZ
OFF-state
output
port A or port B; VO = 0 V or VCCO
VCC(A) = 1.2 V to 3.6 V;
;
-
2
-
10
A
current
V
CC(B) = 1.65 V to 5.5 V
IOFF
power-off
leakage
current
port A; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0 V to 5.5 V
-
-
2
2
-
-
10
10
A
A
port B; VI or VO = 0 V to 5.5 V;
VCC(B) = 0 V; VCC(A) = 0 V to 3.6 V
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
5 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
Table 9.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Static characteristics[1] …continued
Symbol Parameter
Conditions
Tamb = 40 C to +85 C Tamb = 40 C to +125 C Unit
Min
Max
Min
Max
ICC
supply
current
VI = 0 V or VCCI; IO = 0 A
ICC(A)
OE = HIGH;
VCC(A) = 1.4 V to 3.6 V;
-
-
3
3
-
-
15
20
A
A
V
CC(B) = 1.65 V to 5.5 V
OE = LOW;
VCC(A) = 1.4 V to 3.6 V;
V
CC(B) = 1.65 V to 5.5 V
V
CC(A) = 3.6 V; VCC(B) = 0 V
-
-
2
-
-
15
A
A
VCC(A) = 0 V; VCC(B) = 5.5 V
ICC(B)
2
15
OE = HIGH;
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
-
5
5
-
-
15
20
A
A
OE = LOW;
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
VCC(A) = 3.6 V; VCC(B) = 0 V
VCC(A) = 0 V; VCC(B) = 5.5 V
CC(A) + ICC(B)
-
-
2
-
-
15
A
A
2
15
I
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
8
-
40
A
[1] VCCI is the supply voltage associated with the input and VCCO is the supply voltage associated with the output.
11. Dynamic characteristics
Table 10. Typical dynamic characteristics[1]
Voltages are referenced to GND (ground = 0 V); typical values are measured with VCC(A) = 1.2 V and Tamb = 25 C; for test
circuit, see Figure 5; for waveforms, see Figure 3 and Figure 4.
Symbol Parameter
Conditions
VCC(B)
1.8 V
5.9
5.6
0.5
6.9
9.5
81
Unit
2.5 V
4.8
4.8
0.5
6.9
8.6
69
3.3 V
4.4
4.5
0.5
6.9
8.5
83
5.0 V
4.2
4.4
0.5
6.9
8.0
68
tpd
propagation delay A to B
ns
B to A
ns
ten
enable time
disable time
OE to A, B
s
[2]
[2]
tdis
OE to A; no external load
OE to B; no external load
OE to A
ns
ns
ns
OE to B
81
69
83
68
ns
tt
transition time
port A
4.0
2.6
15
4.0
2.0
13
4.1
1.7
13
4.1
1.4
13
ns
port B
ns
tW
pulse width
data rate
data inputs
ns
fdata
70
80
80
80
Mbit/s
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
6 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
[1] tpd is the same as tPLH and tPHL
.
ten is the same as tPZL and tPZH
tdis is the same as tPLZ and tPHZ
tt is the same as tTHL and tTLH
.
.
.
[2] Delay between OE going HIGH and when the outputs are disabled.
Table 11. Dynamic characteristics for temperature range 40 C to +85 C[1]
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 5; for waveforms, see Figure 3 and Figure 4.
Symbol Parameter Conditions
VCC(B)
Unit
1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V 5.0 V 0.5 V
Min
Max
Min
Max
Min
Max
Min
Max
VCC(A) = 1.5 V 0.1 V
tpd
propagation A to B
1.4
0.9
-
12.9
14.2
1.0
1.2
0.7
-
10.1
12.0
1.0
1.1
0.4
-
10.0
11.7
1.0
0.8
0.3
-
9.9
ns
ns
s
ns
delay
B to A
13.7
1.0
ten
enable time OE to A, B
[2]
[2]
tdis
disable time OE to A; no external
load
1.0
11.9
1.0
11.9
1.0
11.9
1.0
11.9
OE to B; no external
load
1.0
16.9
1.0
15.2
1.0
14.1
1.0
13.8
ns
OE to A
OE to B
-
320
200
5.1
4.7
-
-
260
200
5.1
3.2
-
-
260
200
5.1
2.5
-
-
280
200
5.1
2.7
-
ns
-
-
-
-
ns
tt
transition
time
port A
port B
0.9
0.9
25
-
0.9
0.6
25
-
0.9
0.5
25
-
0.9
0.4
25
-
ns
ns
tW
pulse width data inputs
data rate
ns
fdata
40
40
40
40
Mbit/s
VCC(A) = 1.8 V 0.15 V
tpd
propagation A to B
delay
1.6
1.5
-
11.0
12.0
1.0
1.4
1.3
-
7.7
8.4
1.0
11.0
1.3
1.0
-
6.8
7.6
1.0
11.0
1.2
0.9
-
6.5
7.1
1.0
11.0
ns
ns
s
ns
B to A
ten
enable time OE to A, B
[2]
[2]
tdis
disable time OE to A; no external
load
1.0
11.0
1.0
1.0
1.0
OE to B; no external
load
1.0
15.4
1.0
13.5
1.0
12.4
1.0
12.1
ns
OE to A
OE to B
-
260
200
4.1
4.7
-
-
230
200
4.1
3.2
-
-
230
200
4.1
2.5
-
-
230
200
4.1
2.7
-
ns
-
-
-
-
ns
tt
transition
time
port A
port B
0.8
0.9
20
-
0.8
0.6
17
-
0.8
0.5
17
-
0.8
0.4
17
-
ns
ns
tW
pulse width data inputs
data rate
ns
fdata
49
60
60
60
Mbit/s
VCC(A) = 2.5 V 0.2 V
tpd propagation A to B
delay
enable time OE to A, B
-
-
-
-
-
-
1.1
1.2
-
6.3
6.6
1.0
1.0
1.1
-
5.2
5.1
1.0
0.9
0.9
-
4.7
4.4
1.0
ns
ns
s
B to A
ten
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
7 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
Table 11. Dynamic characteristics for temperature range 40 C to +85 C[1] …continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 5; for waveforms, see Figure 3 and Figure 4.
Symbol Parameter Conditions
VCC(B)
Unit
1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V 5.0 V 0.5 V
Min
Max
Min
Max
Min
Max
Min
Max
[2]
[2]
tdis
disable time OE to A; no external
-
-
1.0
9.2
1.0
9.2
1.0
9.2
ns
ns
load
OE to B; no external
load
-
-
1.0
11.9
1.0
10.7
1.0
10.2
OE to A
OE to B
port A
-
-
-
-
-
-
-
-
-
-
-
-
-
200
200
3.0
3.2
-
-
200
200
3.0
2.5
-
-
200
200
3.0
2.7
-
ns
-
-
-
ns
tt
transition
time
0.7
0.7
12
-
0.7
0.5
10
-
0.7
0.4
10
-
ns
port B
ns
tW
pulse width data inputs
data rate
ns
fdata
85
100
100
Mbit/s
VCC(A) = 3.3 V 0.3 V
tpd
propagation A to B
delay
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
1.0
-
4.7
4.9
1.0
9.2
0.8
0.9
-
4.0
3.8
1.0
9.2
ns
ns
s
ns
B to A
ten
enable time OE to A, B
[2]
[2]
tdis
disable time OE to A; no external
load
1.0
1.0
OE to B; no external
load
-
-
-
-
1.0
10.1
1.0
9.6
ns
OE to A
OE to B
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
260
200
2.5
2.5
-
-
260
200
2.5
2.7
-
ns
-
-
ns
tt
transition
time
port A
port B
0.7
0.5
10
-
0.7
0.4
10
-
ns
ns
tW
pulse width data inputs
data rate
ns
fdata
100
100
Mbit/s
[1] tpd is the same as tPLH and tPHL
ten is the same as tPZL and tPZH
tdis is the same as tPLZ and tPHZ
tt is the same as tTHL and tTLH
[2] Delay between OE going HIGH and when the outputs are disabled.
.
.
.
.
Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1]
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 5; for waveforms, see Figure 3 and Figure 4.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V 5.0 V 0.5 V
Min
Max Min
Max Min
Max Min
Max
VCC(A) = 1.5 V 0.1 V
tpd
propagation A to B
1.4
0.9
-
15.9 1.2
17.2 0.7
13.1 1.1
15.0 0.4
13.0 0.8
14.7 0.3
12.9 ns
16.7 ns
delay
B to A
ten
enable time OE to A, B
1.0
-
1.0
-
1.0
-
1.0
s
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
8 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1] …continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 5; for waveforms, see Figure 3 and Figure 4.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V 5.0 V 0.5 V
Min
1.0
1.0
-
Max Min
12.5 1.0
18.1 1.0
Max Min
12.5 1.0
16.2 1.0
Max Min
12.5 1.0
14.9 1.0
Max
[2]
[2]
tdis
disable time OE to A; no external load
12.5 ns
14.6 ns
OE to B; no external load
OE to A
340
220
7.1
6.5
-
-
280
220
7.1
5.2
-
-
280
220
7.1
4.8
-
-
300
220
7.1
4.7
-
ns
OE to B
-
-
-
-
ns
tt
transition
time
port A
port B
0.9
0.9
25
-
0.9
0.6
25
-
0.9
0.5
25
-
0.9
0.4
25
-
ns
ns
tW
pulse width data inputs
data rate
ns
fdata
40
40
40
40
Mbit/s
VCC(A) = 1.8 V 0.15 V
tpd
propagation A to B
delay
1.6
1.5
-
14.0 1.4
15.0 1.3
10.7 1.3
11.4 1.0
9.8
1.2
9.5
ns
B to A
10.6 0.9
1.0
10.1 ns
1.0 s
ten
enable time OE to A, B
disable time OE to A; no external load
OE to B; no external load
OE to A
1.0
-
1.0
-
-
[2]
[2]
tdis
1.0
1.0
-
11.5
1.0
11.5 1.0
14.5 1.0
11.5 1.0
13.3 1.0
11.5 ns
12.7 ns
16.5 1.0
280
220
6.2
5.8
-
-
250
220
6.1
5.2
-
-
250
220
6.1
4.8
-
-
250
220
6.1
4.7
-
ns
OE to B
-
-
-
-
ns
tt
transition
time
port A
port B
0.8
0.9
22
-
0.8
0.6
19
-
0.8
0.5
19
-
0.8
0.4
19
-
ns
ns
tW
pulse width data inputs
data rate
ns
fdata
45
55
55
55
Mbit/s
VCC(A) = 2.5 V 0.2 V
tpd
propagation A to B
delay
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.1
1.2
-
9.3
9.6
1.0
9.6
1.0
1.1
-
8.2
8.1
1.0
9.6
0.9
0.9
-
7.7
7.4
1.0
9.6
ns
ns
s
ns
B to A
ten
enable time OE to A, B
disable time OE to A; no external load
OE to B; no external load
OE to A
[2]
[2]
tdis
1.0
1.0
-
1.0
1.0
12.6 1.0
11.4 1.0
10.8 ns
220
220
5.0
4.6
-
-
220
220
5.0
4.8
-
-
220
220
5.0
4.7
-
ns
OE to B
-
-
-
ns
tt
transition
time
port A
port B
0.7
0.7
14
-
0.7
0.5
13
-
0.7
0.4
10
-
ns
ns
tW
pulse width data inputs
data rate
ns
fdata
75
80
100
Mbit/s
VCC(A) = 3.3 V 0.3 V
tpd propagation A to B
delay
enable time OE to A, B
-
-
-
-
-
-
-
-
-
-
-
-
0.9
1.0
-
7.7
7.9
1.0
0.8
0.9
-
7.0
6.8
1.0
ns
ns
s
B to A
ten
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
9 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1] …continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 5; for waveforms, see Figure 3 and Figure 4.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V 5.0 V 0.5 V
Min
Max Min
Max Min
Max Min
9.5 1.0
10.7 1.0
Max
9.5
9.6
280
220
4.5
4.7
-
[2]
[2]
tdis
disable time OE to A; no external load
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
1.0
-
ns
OE to B; no external load
OE to A
ns
280
220
4.5
4.1
-
-
ns
OE to B
-
-
ns
tt
transition
time
port A
port B
0.7
0.5
10
-
0.7
0.4
10
-
ns
ns
tW
pulse width data inputs
data rate
ns
fdata
100
100
Mbit/s
[1] tpd is the same as tPLH and tPHL
ten is the same as tPZL and tPZH
.
.
tdis is the same as tPLZ and tPHZ
.
tt is the same as tTHL and tTLH.
[2] Delay between OE going HIGH and when the outputs are disabled.
Table 13. Typical power dissipation capacitance table[1][2]
Tested at Tamb = 25 C; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions VCC(A)
Unit
1.2 V 1.2 V 1.5 V 1.8 V 2.5 V 2.5 V 3.3 V
VCC(B)
1.8 V 5.0 V 1.8 V 1.8 V 2.5 V 5.0 V 3.3 V
to
5.0 V
CPD
power
dissipation
capacitance
outputs enabled; OE = GND
port A: (direction A to B)
port A: (direction B to A)
port B: (direction A to B)
port B: (direction B to A)
outputs disabled; OE = VCC(A)
port A: (direction A to B)
port A: (direction B to A)
port B: (direction A to B)
port B: (direction B to A)
5
5
5
5
5
5
5
pF
pF
pF
pF
8
8
8
8
8
8
8
18
13
18
16
18
12
18
12
18
12
18
12
18
13
0.12
0.01
0.01
0.07
0.12
0.01
0.01
0.09
0.04
0.01
0.01
0.07
0.05
0.01
0.01
0.07
0.08
0.01
0.01
0.05
0.08
0.01
0.01
0.09
0.07
0.01
0.01
0.09
pF
pF
pF
pF
[1] CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of the outputs.
[2] fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL = .
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
10 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
12. Waveforms
V
I
V
A, B input
GND
M
t
t
PLH
PHL
V
OH
90 %
B, A output
V
V
M
10 %
OL
t
t
THL
TLH
001aan315
Measurement points are given in Table 14.
OL and VOH are typical output voltage levels that occur with the output load.
V
Fig 3. Data input (A, B) to data output (B, A) propagation delay times
V
I
OE input
V
M
t
GND
t
PLZ
PZL
V
CCO
output
LOW-to-OFF
OFF-to-LOW
V
M
V
X
V
OL
t
t
PZH
PHZ
V
OH
V
Y
output
HIGH-to-OFF
OFF-to-HIGH
V
M
GND
outputs
enabled
outputs
disabled
outputs
enabled
aaa-001619
Measurement points are given in Table 14.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 4. Enable and disable times
Table 14. Measurement points[1]
Supply voltage
VCCO
Input
Output
VM
VM
VX
VY
1.2 V
0.5VCCI
0.5VCCI
0.5VCCI
0.5VCCI
0.5VCCI
0.5VCCI
0.5VCCO
0.5VCCO
0.5VCCO
0.5VCCO
0.5VCCO
0.5VCCO
VOL + 0.1 V
VOL + 0.1 V
VOH 0.1 V
VOH 0.1 V
VOH 0.15 V
VOH 0.15 V
VOH 0.3 V
VOH 0.3 V
1.5 V 0.1 V
1.8 V 0.15 V
2.5 V 0.2 V
3.3 V 0.3 V
5.0 V 0.5 V
VOL + 0.15 V
VOL + 0.15 V
VOL + 0.3 V
VOL + 0.3 V
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
11 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
[1] VCCI is the supply voltage associated with the input and VCCO is the supply voltage associated with the output.
t
W
V
I
90 %
negative
pulse
V
V
V
M
M
10 %
0 V
t
t
r
f
t
t
f
r
V
I
90 %
positive
pulse
V
M
M
10 %
0 V
t
W
V
EXT
V
CC
R
L
V
V
O
I
G
DUT
C
L
R
L
001aal920
Test data is given in Table 15.
All input pulses are supplied by generators having the following characteristics: PRR 10 MHz; ZO = 50 ; dV/dt 1.0 V/ns.
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 5. Test circuit for measuring switching times
Table 15. Test data
Supply voltage
VCC(A) VCC(B)
Input
VI[1]
Load
CL
VEXT
[2]
[3]
t/V
RL
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ
1.2 V to 3.6 V 1.65 V to 5.5 V VCCI
1.0 ns/V
15 pF
50 k, 1 M open
open
2VCCO
[1] VCCI is the supply voltage associated with the input.
[2] For measuring data rate, pulse width, propagation delay and output rise and fall measurements, RL = 1 M. For measuring enable and
disable times, RL = 50 k.
[3]
VCCO is the supply voltage associated with the output.
13. Application information
13.1 Applications
Voltage level-translation applications. The NTB0101A can be used to interface between
devices or systems operating at different supply voltages. See Figure 6 for a typical
operating circuit using the NTB0101A.
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
12 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
1.8 V
3.3 V
1.8 V
V
V
CC(B))
3.3 V
CC(A)
0.1 µF
0.1 µF
OE
SYSTEM
CONTROLLER
NTB0101A
SYSTEM
DATA
A
B
DATA
GND
aaa-017139
Fig 6. Typical operating circuit
13.2 Architecture
The architecture of the NTB0101A is shown in Figure 7. The device does not require an
extra input signal to control the direction of data flow from A to B or from B to A. In a static
state, the output drivers of the NTB0101A can maintain a defined output level, but the
output architecture is weak, so that they can be overdriven by an external driver when
data on the bus starts flowing in the opposite direction. The output of one-shot circuits
detect rising or falling edges on the ports A or B. During a rising edge, the one-shot
circuits turn on the PMOS transistors (T1, T3) for a short duration, accelerating the
LOW-to-HIGH transition. Similarly, during a falling edge, the one-shot circuits turn on the
NMOS transistors (T2, T4) for a short duration, accelerating the HIGH-to-LOW transition.
During output transitions, the typical output impedance is 70 at VCCO = 1.2 V to 1.8 V. It
is 50 at VCCO = 1.8 V to 3.3 V and 40 at VCCO = 3.3 V to 5.0 V.
V
V
CC(B)
CC(A)
ONE
SHOT
T1
4 kΩ
T2
ONE
SHOT
B
A
ONE
SHOT
T3
4 kΩ
T4
ONE
SHOT
001aal921
Fig 7. Architecture of NTB0101A I/O cell
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
13 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
13.3 Input driver requirements
For correct operation, the device that drives the data I/Os of the NTB0101A must have a
minimum drive capability of 2 mA. See Figure 8 for a plot of typical input current versus
input voltage.
I
I
V /4 kΩ
T
V
I
−(V − V )/4 kΩ
D
T
001aal922
VT: input threshold voltage of the NTB0101A (typically VCCI / 2).
VD: supply voltage of the external driver.
Fig 8. Typical input current versus input voltage graph
13.4 Power-up
VCC(A) must never be higher than VCC(B) during operation. However during power-up,
VCC(A) VCC(B) does not damage the device. Either of the power supplies can be ramped
up first and hence no special power-up sequencing is required. The NTB0101A includes
circuitry that disables all output ports when either VCC(A) or VCC(B) is switched off.
13.5 Enable and disable
An output enable input (OE) is used to disable the device. Setting OE = HIGH causes all
I/Os to assume the high-impedance OFF-state. The disable time (tdis with no external
load) indicates the delay between when OE goes HIGH and when outputs actually
become disabled. The enable time (ten) indicates the amount of time the user must allow
for a one-shot circuitry to become operational after OE is taken LOW. To ensure a
high-impedance OFF-state during power-up or power-down, pin OE should be tied to
V
CC(A) through a pull-up resistor. The minimum value of the resistor determines the
current-sourcing capability of the driver.
13.6 Pull-up or pull-down resistors on I/O lines
As mentioned previously, the NTB0101A is designed with low static drive strength to drive
capacitive loads of up to 70 pF. To avoid output contention issues, all pull-up or pull-down
resistors used, must be above 50 k. For this reason, NTB0101A is not recommended for
use in open-drain driver applications such as 1-Wire or I2C-bus. For these applications,
the NTS0101 level translator is recommended.
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
14 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
14. Package outline
3ODVWLFꢀVXUIDFHꢇPRXQWHGꢀSDFNDJHꢈꢀꢆꢀOHDGV
627ꢂꢆꢂ
'
%
(
$
;
\
+
Y
0
$
(
ꢆ
ꢅ
ꢄ
4
SLQꢀꢅꢀ
LQGH[
$
$
ꢅ
ꢁ
ꢃ
ꢂ
F
H
ꢅ
E
/
Z
0 %
S
S
H
GHWDLOꢀ;
ꢆ
ꢅ
ꢇꢀPP
VFDOH
',0(16,216ꢀꢉPPꢀDUHꢀWKHꢀRULJLQDOꢀGLPHQVLRQVꢊ
$
PD[
ꢁꢀ
81,7
$
E
S
F
'
H
H
+
/
4
Y
Z
\
(
S
ꢁ
(
ꢆꢈꢁꢆꢀ
ꢆꢈꢇꢆ
ꢅꢈꢅꢀ
ꢆꢈꢄ
ꢆꢈꢇꢉꢀ
ꢆꢈꢅꢆ
ꢇꢈꢇꢀ
ꢅꢈꢄ
ꢅꢈꢁꢉꢀ
ꢅꢈꢅꢉ
ꢇꢈꢇꢀ
ꢇꢈꢆ
ꢆꢈꢊꢉꢀ ꢆꢈꢇꢉꢀ
ꢆꢈꢅꢉ ꢆꢈꢅꢉ
PP
ꢆꢈꢅ
ꢅꢈꢁ
ꢆꢈꢂꢉ
ꢆꢈꢇ
ꢆꢈꢇ
ꢆꢈꢅ
ꢀ5()(5(1&(6
ꢀ-('(& ꢀ-(,7$
6&ꢃꢄꢄ
(8523($1ꢀ
352-(&7,21
287/,1(ꢀ
9(56,21
,668(ꢀ'$7(
ꢀ,(&
ꢆꢊꢃꢅꢅꢃꢆꢄꢀ
ꢆꢂꢃꢆꢁꢃꢅꢂ
ꢀ627ꢁꢂꢁ
ꢀ
Fig 9. Package outline SOT363 (SC-88)
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
15 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
15. Abbreviations
Table 16. Abbreviations
Acronym
CDM
Description
Charged Device Model
Device Under Test
DUT
ESD
ElectroStatic Discharge
Human Body Model
HBM
MM
Machine Model
NMOS
PMOS
PRR
N-type Metal Oxide Semiconductor
P-type Metal Oxide Semiconductor
Pulse Repetition Rate
16. Revision history
Table 17. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NTB0101A v.1
20150714
Product data sheet
-
-
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
16 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
17. Legal information
17.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
17.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
17.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
17 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NTB0101A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 14 July 2015
18 of 19
NTB0101A
NXP Semiconductors
Auto direction sensing dual supply
19. Contents
1
2
3
4
5
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
8
9
10
11
12
13
Application information. . . . . . . . . . . . . . . . . . 12
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input driver requirements . . . . . . . . . . . . . . . . 14
Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Enable and disable. . . . . . . . . . . . . . . . . . . . . 14
Pull-up or pull-down resistors on I/O lines . . . 14
13.1
13.2
13.3
13.4
13.5
13.6
14
15
16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
17.1
17.2
17.3
17.4
18
19
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 July 2015
Document identifier: NTB0101A
相关型号:
NTB0101GM,115
NTB0101 - Dual supply translating transceiver; auto direction sensing; 3-state SON 6-Pin
NXP
NTB0101GW,125
NTB0101 - Dual supply translating transceiver; auto direction sensing; 3-state TSSOP 6-Pin
NXP
NTB0102DP,125
NTB0102 - Dual supply translating transceiver; auto direction sensing; 3-state TSSOP 8-Pin
NXP
NTB0102DP-Q100H
NTB0102-Q100 - Dual supply translating transceiver; auto direction sensing; 3-state TSSOP 8-Pin
NXP
NTB0102GD-Q100H
NTB0102-Q100 - Dual supply translating transceiver; auto direction sensing; 3-state SON 8-Pin
NXP
NTB0102GF,115
NTB0102 - Dual supply translating transceiver; auto direction sensing; 3-state SON 8-Pin
NXP
©2020 ICPDF网 联系我们和版权申明