PBHV8115T_08 [NXP]
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor; 150 V ，1 A NPN高电压低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBHV8115T_08 |
| 厂家： | 
NXP |
| 描述： | 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor |
| 文件： | 总12页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 — 9 December 2008
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115T.
1.2 Features
I High voltage
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I AEC-Q101 qualified
I Small SMD plastic package
1.3 Applications
I LED driver for LED chain module
I LCD backlighting
I High Intensity Discharge (HID) front lighting
I Automotive motor management
I Hook switch for wired telecom
I Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
Quick reference data
Parameter
Conditions
Min
Typ
Max Unit
collector-emitter voltage
collector current
open base
-
-
150
V
A
-
-
1
-
hFE
DC current gain
VCE = 10 V;
IC = 50 mA
100
250
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
3
3
2
emitter
3
collector
1
1
2
2
sym021
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PBHV8115T
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PBHV8115T
W6*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBHV8115T_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 December 2008
2 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
400
150
6
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
-
-
-
V
open collector
V
1
A
ICM
peak collector current
single pulse;
2
A
tp ≤ 1 ms
IBM
peak base current
single pulse;
-
400
mA
tp ≤ 1 ms
[1]
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb ≤ 25 °C
-
300
mW
°C
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
006aab150
400
P
tot
(mW)
300
200
100
0
−75
−25
25
75
125
175
(°C)
T
amb
FR4 PCB, standard footprint
Fig 1. Power derating curve
PBHV8115T_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 December 2008
3 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
thermal resistance from
junction to ambient
in free air
-
-
417
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
70
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab151
3
10
duty cycle = 1
Z
th(j-a)
0.75
0.5
0.33
(K/W)
2
10
0.2
0.1
0.05
10
0.02
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV8115T_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 December 2008
4 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
ICBO
collector-base cut-off
current
VCB = 120 V; IE = 0 A
-
-
-
-
100
10
nA
VCB = 120 V; IE = 0 A;
µA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter cut-off VCE = 120 V; VBE = 0 V
current
-
-
-
-
100
100
nA
nA
emitter-base cut-off
current
VEB = 4 V; IC = 0 A
DC current gain
VCE = 10 V
IC = 50 mA
100
250
250
160
30
-
IC = 100 mA
100
-
[1]
[1]
IC = 0.5 A
50
10
-
-
IC = 1 A
-
VCEsat
collector-emitter
saturation voltage
IC = 100 mA; IB = 10 mA
IC = 100 mA; IB = 20 mA
IC = 1 A; IB = 200 mA
40
60
50
350
1.2
mV
mV
mV
V
-
33
[1]
[1]
-
225
1.1
VBEsat
fT
base-emitter saturation IC = 1 A; IB = 200 mA
voltage
-
transition frequency
collector capacitance
emitter capacitance
VCE = 10 V; IE = 10 mA;
f = 100 MHz
-
-
-
30
-
-
-
MHz
pF
Cc
VCB = 20 V; IE = ie = 0 A;
f = 1 MHz
5.7
150
Ce
VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
pF
td
tr
delay time
rise time
VCC = 6 V; IC = 0.5 A;
-
-
-
-
-
-
7
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
IBon = 0.1 A; IBoff = −0.1 A
565
572
1530
700
2230
ton
ts
turn-on time
storage time
fall time
tf
toff
turn-off time
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBHV8115T_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 December 2008
5 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
006aab158
006aab159
500
2.0
I
(mA) = 300
B
I
C
(A)
h
270
240
210
180
FE
400
1.6
(1)
150
120
300
1.2
0.8
0.4
0
90
60
(2)
200
30
(3)
100
0
10
−1
2
3
4
1
10
10
10
10
(mA)
0
1
2
3
4
5
I
V
(V)
CE
C
VCE = 10 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
006aab160
006aab161
1.2
1.3
V
(V)
V
BE
BEsat
(V)
(1)
(2)
(3)
0.8
0.9
0.5
0.1
(1)
(2)
(3)
0.4
0
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 10 V
IC/IB = 5
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV8115T_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 December 2008
6 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
006aab162
006aab163
1
10
V
CEsat
(V)
V
CEsat
(V)
1
−1
10
(1)
(2)
−1
−2
−3
10
10
10
(1)
(2)
−2
10
(3)
(3)
−3
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 5
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab164
006aab165
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
10
10
(1)
(2)
1
1
(1)
(3)
(2)
(3)
−1
−1
10
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 5
Tamb = 25 °C
(1) IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(2) IC/IB = 10
(3) IC/IB = 5
Fig 9. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV8115T_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 December 2008
7 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
8. Test information
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mlb826
Fig 11. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 12. Package outline SOT23 (TO-236AB)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000
-215
10000
PBHV8115T
SOT23
4 mm pitch, 8 mm tape and reel
-235
[1] For further information and the availability of packing methods, see Section 14.
PBHV8115T_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 December 2008
8 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 13. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 14. Wave soldering footprint SOT23 (TO-236AB)
PBHV8115T_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 December 2008
9 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
PBHV8115T_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20081209
Product data sheet
-
PBHV8115T_1
• Table 5: IBM maximum value changed from 100 mA to 400 mA
• Figure 4: amended
• Section 13 “Legal information”: updated
PBHV8115T_1
20080204
Product data sheet
-
-
PBHV8115T_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 December 2008
10 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PBHV8115T_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 9 December 2008
11 of 12
PBHV8115T
NXP Semiconductors
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 December 2008
Document identifier: PBHV8115T_2
相关型号：
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