PBLS4001Y/T1 [NXP]
TRANSISTOR 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal;
| 型号： | PBLS4001Y/T1 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBLS4001Y; PBLS4001V
40 V PNP BISS loadswitch
Rev. 02 — 25 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in one package.
Table 1:
Product overview
Type number
Package
Philips
JEITA
SC-88
-
PBLS4001Y
PBLS4001V
SOT363
SOT666
1.2 Features
■ Low VCEsat (BISS) and resistor-equipped transistor in one package
■ Low threshold voltage (< 1 V) compared to MOSFET
■ Low drive power required
■ Space-saving solution
■ Reduction of component count
1.3 Applications
■ Supply line switches
■ Battery charger switches
■ High-side switches for LEDs, drivers and backlights
■ Portable equipment
1.4 Quick reference data
Table 2:
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
TR1; PNP low VCEsat transistor
VCEO
IC
collector-emitter voltage
collector-current (DC)
open base
-
-
-
-
−40
V
-
−500
700
mA
mΩ
[1]
RCEsat
collector-emitter saturation IC = −500 mA;
440
resistance
TR2; NPN resistor-equipped transistor
VCEO collector-emitter voltage
IB = −50 mA
open base
-
-
50
V
PBLS4001Y; PBLS4001V
Philips Semiconductors
40 V PNP BISS loadswitch
Table 2:
Symbol
IO
Quick reference data …continued
Parameter
Conditions
Min
-
Typ
-
Max
100
2.86
1.2
Unit
mA
kΩ
output current (DC)
bias resistor 1 (input)
bias resistor ratio
R1
1.54
0.8
2.2
1
R2/R1
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. Pinning information
Table 3:
Pinning
Pin
1
Description
Simplified outline
Symbol
emitter TR1
6
5
4
6
5
4
2
base TR1
3
output (collector) TR2
GND (emitter) TR2
input (base) TR2
collector TR1
R1
R2
4
TR2
5
TR1
1
1
2
3
6
001aab555
2
3
sym036
3. Ordering information
Table 4:
Ordering information
Type number Package
Name
Description
Version
PBLS4001Y
PBLS4001V
SC-88
-
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
SOT363
SOT666
4. Marking
Table 5:
Marking codes
Type number
PBLS4001Y
PBLS4001V
Marking code[1]
S1*
K1
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14378
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
2 of 11
PBLS4001Y; PBLS4001V
Philips Semiconductors
40 V PNP BISS loadswitch
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
TR1; PNP low VCEsat transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
open emitter
open base
-
-
-
-
-
-
-
-
−40
−40
−6
V
V
open collector
V
−500
−1
mA
A
ICM
single pulse; tp ≤ 1 ms
single pulse; tp ≤ 1 ms
IB
−50
−100
200
mA
mA
mW
IBM
peak base current
[1]
Ptot
total power dissipation
T
amb ≤ 25 °C
TR2; NPN resistor-equipped transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
open emitter
open base
-
-
-
50
50
10
V
V
V
open collector
positive
-
-
-
-
-
+12
−10
100
100
200
V
negative
V
IO
output current (DC)
peak collector current
total power dissipation
mA
mA
mW
ICM
single pulse; tp ≤ 1 ms
[1]
Ptot
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
storage temperature
junction temperature
ambient temperature
-
300
mW
°C
Tstg
−65
-
+150
150
Tj
°C
Tamb
−65
+150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7:
Thermal characteristics
Symbol
Per device
Rth(j-a)
Parameter
Conditions
Min
Typ Max Unit
thermal resistance from
junction to ambient
in free air
[1]
SOT363
SOT666
-
-
-
-
416
416
K/W
K/W
[1] [2]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
9397 750 14378
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
3 of 11
PBLS4001Y; PBLS4001V
Philips Semiconductors
40 V PNP BISS loadswitch
7. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max
Unit
TR1; PNP low VCEsat transistor
ICBO
collector-base cut-off VCB = −40 V; IE = 0 A
-
-
-
-
−100 nA
−50 µA
current
VCB = −40 V; IE = 0 A;
Tj = 150 °C
IEBO
hFE
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100 nA
DC current gain
VCE = −2 V; IC = −10 mA
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA
IC = −200 mA; IB = −10 mA
IC = −500 mA; IB = −50 mA
IC = −500 mA; IB = −50 mA
200
-
-
-
-
[1]
[1]
150
-
40
-
-
VCEsat
collector-emitter
saturation voltage
-
−50
mV
-
-
−130 mV
−200 mV
−350 mV
-
-
[1]
[1]
-
-
RCEsat
VBEsat
VBEon
fT
collector-emitter
saturation resistance
-
440
700
−1.2
−1.1
-
mΩ
[1]
[1]
base-emitter
saturation voltage
IC = −500 mA; IB = −50 mA
VCE = −2 V; IC = −100 mA
-
-
-
-
V
base-emitter
turn-on voltage
V
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100 300
MHz
pF
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
-
-
-
-
10
f = 1 MHz
TR2; NPN resistor-equipped transistor
ICBO collector-base cut-off VCB = 50 V; IE = 0 A
100
nA
current
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
-
-
1
µA
µA
VCE = 30 V; IB = 0 A;
50
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
2
mA
mV
hFE
DC current gain
VCE = 5 V; IC = 20 mA
IC = 10 mA; IB = 0.5 mA
30
-
-
-
-
VCEsat
collector-emitter
150
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 1 mA
on-state input voltage VCE = 0.3 V; IC = 20 mA
bias resistor 1 (input)
-
1.2
1.6
0.5
-
V
2
V
1.54 2.2
2.86
1.2
2.5
kΩ
R2/R1
Cc
bias resistor ratio
0.8
-
1
-
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 14378
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
4 of 11
PBLS4001Y; PBLS4001V
Philips Semiconductors
40 V PNP BISS loadswitch
006aaa388
006aaa390
600
−1
(1)
h
FE
V
CEsat
(mV)
(2)
(3)
400
−1
−10
(1)
(2)
(3)
200
−2
0
−10
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I (mA)
C
C
VCE = −2 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. TR1 (PNP): DC current gain as a function of
collector current; typical values
Fig 2. TR1 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa389
006aaa392
−1100
−1.1
V
V
BE
BEsat
(V)
(mV)
−900
−0.9
−0.7
−0.5
−0.3
−0.1
(1)
(2)
(3)
(1)
(2)
(3)
−700
−500
−300
−100
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I (mA)
C
C
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 4. TR1 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
9397 750 14378
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
5 of 11
PBLS4001Y; PBLS4001V
Philips Semiconductors
40 V PNP BISS loadswitch
006aaa394
006aaa393
3
−1
10
I
(mA) = −30
−27
B
I
C
R
CEsat
(A)
−24
−21
(Ω)
−0.8
2
−18
10
−15
−12
−9
−0.6
−0.4
−0.2
0
−6
−3
10
(1)
(2)
(3)
1
−1
10
−1
2
3
0
−1
−2
−3
−4
−5
(V)
−10
−1
−10
−10
−10
V
I
(mA)
CE
C
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig 6. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa391
006aaa395
3
−1
10
R
CEsat
(Ω)
V
CEsat
2
10
(mV)
−1
−10
10
(1)
(2)
(1)
(2)
(3)
1
(3)
−2
−1
−10
10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I (mA)
C
C
Tamb = 25 °C
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 7. TR1 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
Fig 8. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
9397 750 14378
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
6 of 11
PBLS4001Y; PBLS4001V
Philips Semiconductors
40 V PNP BISS loadswitch
006aaa015
006aaa014
3
3
10
10
h
FE
(1)
V
CEsat
(2)
(3)
(mV)
2
10
2
10
(1)
(2)
(3)
10
1
10
10
−1
2
2
1
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 9. TR2 (NPN): DC current gain as a function of
collector current; typical values
Fig 10. TR2 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa016
006aaa017
2
10
10
V
I(on)
(V)
V
I(off)
(V)
10
(1)
(2)
1
(3)
(1)
(2)
(3)
1
−1
−1
10
10
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 11. TR2 (NPN): On-state input voltage as a function
of collector current; typical values
Fig 12. TR2 (NPN): Off-state input voltage as a function
of collector current; typical values
9397 750 14378
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
7 of 11
PBLS4001Y; PBLS4001V
Philips Semiconductors
40 V PNP BISS loadswitch
8. Package outline
2.2
1.8
1.1
0.8
1.7
1.5
0.6
0.5
0.45
0.15
6
5
4
6
5
4
0.3
0.1
2.2 1.35
2.0 1.15
1.7 1.3
1.5 1.1
pin 1
index
pin 1 index
1
2
3
1
2
3
0.25
0.10
0.3
0.2
0.18
0.08
0.27
0.17
0.65
0.5
1.3
1
Dimensions in mm
04-11-08
Dimensions in mm
04-11-08
Fig 13. Package outline SOT363 (SC-88)
Fig 14. Package outline SOT666
9. Packing information
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
PBLS4001Y
PBLS4001V
Package
SOT363
SOT666
Description
Packing quantity
3000
-115
-125
-
4000
8000
10000
[2]
[3]
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-
-
-135
-
-
-165
-
-315
-
-
-
-
-115
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
9397 750 14378
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
8 of 11
PBLS4001Y; PBLS4001V
Philips Semiconductors
40 V PNP BISS loadswitch
10. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status Change notice Doc. number
Supersedes
PBLS4001Y_PBLS4001V_2 20050425
Product data sheet -
9397 750 14378 PBLS4001Y_
PBLS4001V_1
Modifications:
• Table 1: ‘EIAJ’ in header amended to ‘JEITA’
• Table 2: ‘equivalent on-resistance’ renamed to ‘collector-emitter saturation resistance’
• Table 8: ‘equivalent on-resistance’ renamed to ‘collector-emitter saturation resistance’
• Figure 4 and 6: conditions amended
• Figure 6: ‘equivalent on-resistance’ renamed to ‘collector-emitter saturation resistance’
• Figure 7 and 8: conditions amended
• Table 9: Packing method (2 mm pitch) for SOT666 added
PBLS4001Y_PBLS4001V_1 20041108
Product data sheet -
9397 750 13454 -
9397 750 14378
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
9 of 11
PBLS4001Y; PBLS4001V
Philips Semiconductors
40 V PNP BISS loadswitch
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14378
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 25 April 2005
10 of 11
PBLS4001Y; PBLS4001V
Philips Semiconductors
40 V PNP BISS loadswitch
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
9
10
11
12
13
14
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 25 April 2005
Document number: 9397 750 14378
Published in The Netherlands
相关型号：
PBLS4001Y/T2
TRANSISTOR 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP
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