PBSS4130QA_技术文档

3

-

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

D

0

1

0

1

N

F

D

28 August 2013

Product data sheet

1. General description

NPN low V_CEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

and solderable side pads.

PNP complement: PBSS5130QA.

2. Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

High energy efficiency due to less heat generation

Reduced Printed-Circuit Board (PCB) area requirements

Solderable side pads

•

AEC-Q101 qualified

3. Applications

Loadswitch

•

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-

30

V

I_C

collector current

-

1

A

I_CM

peak collector current single pulse; t_p≤ 1 ms

-

1.5

235

A

R_CEsat

collector-emitter

I_C= 1 A; I_B= 0.1 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02 ; T_amb= 25 °C

175

mΩ

saturation resistance

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

5. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

C

1

2

3

4

B

E

C

base

1

4

2

emitter

collector

B

3

E

sym123

Transparent top view

DFN1010D-3 (SOT1215)

6. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PBSS4130QA

DFN1010D-3 plastic thermal enhanced ultra thin small outline package; no

leads; 3 terminals

SOT1215

7. Marking

Table 4.

Marking codes

Type number

Marking code

PBSS4130QA

01 00 10

READING

DIRECTION

MARKING CODE

(EXAMPLE)

YEAR DATE

CODE

VENDOR CODE

PIN 1

INDICATION MARK

MARK-FREE AREA

READING EXAMPLE:

11

01

10

aaa-008041

Fig. 1. DFN1010D-3 (SOT1215) binary marking code description

PBSS4130QA

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Product data sheet

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

open emitter

open base

Min

Max

30

Unit

V

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

-

30

V

open collector

-

7

V

-

1

A

I_CM

peak collector current

base current

single pulse; t_p≤ 1 ms

-

1.5

0.3

1

A

I_B

-

A

I_BM

peak base current

total power dissipation

single pulse; t_p≤ 1 ms

T_amb≤ 25 °C

-

A

P_tot

[1]

[2]

[3]

[4]

[5]

-

325

600

740

540

mW

-

1000 mW

T_j

junction temperature

ambient temperature

storage temperature

-

150

°C

T_amb

T_stg

-55

-65

[1] Device mounted on an FR4 PCB single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm².

Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm².

[3]

[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm².

[5]

PBSS4130QA

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Product data sheet

28 August 2013

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

aaa-007844

1.25

P

tot

(W)

(1)

(2)

1.00

0.75

0.50

0.25

0

(3)

(4)

(5)

-75

-25

25

75

125

175

(°C)

T

amb

(1) FR4 PCB, 4-layer copper, 1 cm²

(2) FR4 PCB, single-sided copper, 6 cm²

(3) FR4 PCB, single-sided copper, 1 cm²

(4) FR4 PCB, 4-layer copper, standard footprint

(5) FR4 PCB, single-sided copper, standard footprint

Fig. 2. Power derating curves

9. Thermal characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

385

209

169

232

125

Unit

K/W

R_th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

[2]

[3]

[4]

[5]

-

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm².

Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm².

[3]

[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm².

[5]

PBSS4130QA

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Product data sheet

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

aaa-007845

3

10

duty cycle = 1

Z

th(j-a)

(K/W)

0.75

0.33

0.5

0.2

2

10

0.1

0.05

0.01

10

0.02

0

1

-5

10

-4

-3

-2

10

-1

2

3

10

1

10

t

(s)

p

FR4 PCB, single-sided copper, standard footprint

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-007846

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

2

10

0.33

0.2

0.1

0.05

10

0.02

0.01

0

1

-1

10

-5

-4

-3

-2

10

-1

2

3

10

1

10

t

(s)

p

FR4 PCB, single-sided copper, 1 cm²

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PBSS4130QA

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Product data sheet

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

aaa-007847

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

2

0.75

0.5

10

0.33

0.2

0.1

10

0.05

0.02

0

0.01

-4

1

-5

10

-3

-2

10

-1

2

3

10

1

10

t

(s)

p

FR4 PCB, single-sided copper, 6 cm²

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-007848

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

2

10

0.33

0.2

0.1

0.05

10

0.02

0.01

0

1

-5

10

-4

-3

-2

10

-1

2

3

10

1

10

t

(s)

p

FR4 PCB, 4-layer copper, standard footprint

Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PBSS4130QA

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Product data sheet

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

aaa-007849

3

10

Z

th(j-a)

(K/W)

duty cycle = 1

2

10

0.75

0.5

0.33

0.2

0.1

10

0.05

0.02

0

0.01

-4

1

-5

10

-3

-2

10

-1

2

3

10

1

10

t

(s)

p

FR4 PCB, 4-layer copper, 1 cm²

Fig. 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics

Table 7.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

100

50

Unit

nA

I_CBO

collector-base cut-off

current

V_CB= 24 V; I_E= 0 A; T_amb= 25 °C

V_CB= 24 V; I_E= 0 A; T_j= 150 °C

-

µA

I_CES

I_EBO

h_FE

collector-emitter cut-off V_CE= 24 V; V_BE= 0 V; T_amb= 25 °C

current

100

nA

emitter-base cut-off

current

V_EB= 5 V; I_C= 0 A; T_amb= 25 °C

-

100

-

nA

DC current gain

V_CE= 2 V; I_C= 100 mA; pulsed;

250

430

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

V_CE= 2 V; I_C= 500 mA; pulsed;

230

380

290

90

-

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

V_CE= 2 V; I_C= 1 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02 ; T_amb= 25 °C

180

-

V_CEsat

collector-emitter

I_C= 500 mA; I_B= 50 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

-

125

245

235

mV

mΩ

saturation voltage

I_C= 1 A; I_B= 50 mA; pulsed;

180

175

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

I_C= 1 A; I_B= 100 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

R_CEsat

collector-emitter

I_C= 1 A; I_B= 0.1 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02 ; T_amb= 25 °C

saturation resistance

PBSS4130QA

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Product data sheet

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_BEsat

base-emitter saturation I_C= 500 mA; I_B= 50 mA; pulsed;

-

0.89

1

V

voltage

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

I_C= 1 A; I_B= 50 mA; pulsed;

-

0.94

0.97

0.78

1.05

1.1

V

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

I_C= 1 A; I_B= 100 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

V_BEon

base-emitter turn-on

voltage

V_CE= 2 V; I_C= 0.5 A; pulsed;

0.9

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

t_d

t_r

delay time

V_CC= 10 V; I_C= 0.5 A; I_Bon= 25 mA;

I_Boff= -25 mA; T_amb= 25 °C

-

15

-

ns

rise time

-

30

ns

t_on

t_s

turn-on time

storage time

fall time

-

45

ns

-

425

65

ns

t_f

-

ns

t_off

f_T

turn-off time

transition frequency

-

490

190

ns

V_CE= 10 V; I_C= 50 mA; f = 100 MHz;

T_amb= 25 °C

130

MHz

C_c

collector capacitance

V_CB= 10 V; I_E= 0 A; i_e= 0 A;

f = 1 MHz; T_amb= 25 °C

-

8

10

pF

aaa-007990

aaa-007991

3

10

1.5

I

(mA) = 5

B

4.5

I

C

(1)

(2)

(3)

4

3

(A)

h

FE

3.5

1.0

2.5

1.5

2

1

0.5

0.0

0.5

2

10

-1

2

3

4

10

1

10

(mA)

0

1

2

3

4

5

I

V

(V)

CE

C

V_CE= 2 V

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 9. Collector current as a function of collector-

emitter voltage; typical values

Fig. 8. DC current gain as a function of collector

current; typical values

PBSS4130QA

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Product data sheet

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

aaa-007992

aaa-007993

1.2

V

BE

(V)

V

BEsat

(V)

(1)

(2)

(1)

(2)

0.8

0.4

0.0

(3)

0.4

0.0

-1

10

2

3

4

-1

10

2

3

4

1

10

(mA)

1

10

I (mA)

C

I

C

V_CE= 2 V

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig. 10. Base-emitter voltage as a function of collector Fig. 11. Base-emitter saturation voltage as a function of

current; typical values collector current; typical values

aaa-007994

aaa-007995

1

V

CEsat

(V)

-1

10

(1)

(2)

(3)

(1)

(2)

(3)

-2

10

-3

-1

10

-3

-1

10

2

3

4

2

3

4

1

10

(mA)

1

10

I (mA)

C

I

C

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig. 12. Collector-emitter saturation voltage as a

function of collector current; typical values

Fig. 13. Collector-emitter saturation voltage as a

function of collector current; typical values

PBSS4130QA

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Product data sheet

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

aaa-007996

aaa-007997

3

10

R

CEsat

(Ω)

R

CEsat

(Ω)

2

10

(1)

(2)

10

1

(3)

(1)

(2)

(3)

-1

10

-1

2

3

4

-1

2

3

4

10

1

10

(mA)

10

1

10

I (mA)

C

I

C

I_C/I_B= 20

T_amb= 25 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 14. Collector-emitter saturation resistance as a

function of collector current; typical values

Fig. 15. Collector-emitter saturation resistance as a

function of collector current; typical values

PBSS4130QA

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Product data sheet

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

11. Test information

I

B

input pulse

90 %

(idealized waveform)

I

(100 %)

Bon

10 %

I

Boff

output pulse

(idealized waveform)

I

C

90 %

I

(100 %)

C

10 %

t

f

t

r

s

d

t

off

on

006aaa003

Fig. 16. BISS transistor switching time definition

V

CC

BB

R

B

R

C

V

o

(probe)

450 Ω

(probe)

oscilloscope

450 Ω

oscilloscope

R2

V

DUT

I

R1

mlb826

Fig. 17. Test circuit for switching times

11.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

PBSS4130QA

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Product data sheet

28 August 2013

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

12. Package outline

0.87

0.95

0.75

0.22

0.30

0.17

2

1

0.25

0.95

1.05

0.16

0.24

0.1

0.195

0.275

3

0.04

max

0.245

0.325

0.34

0.40

1.05

1.15

Dimensions in mm

13-03-05

Fig. 18. Package outline DFN1010D-3 (SOT1215)

PBSS4130QA

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Product data sheet

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

13. Soldering

Footprint information for reflow soldering of DFN1010D-3 package

SOT1215

1.2

0.45 (2x)

0.35 (2x)

0.3

1.1

0.25 (2x)

0.4

0.75

0.3 0.4

0.5

0.4

0.5

0.5 1.3

1.5 1.4

0.3 0.4

0.3

0.4

0.5

1.3

solder land

solder land plus solder paste

solder resist

occupied area

Dimensions in mm

12-11-23

Issue date

sot1215_fr

13-03-06

Fig. 19. Reflow soldering footprint for DFN1010D-3 (SOT1215)

PBSS4130QA

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Product data sheet

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PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

14. Revision history

Table 8.

Revision history

Data sheet ID

Release date

Data sheet status

Change notice

Supersedes

PBSS4130QA v.1

20130828

Product data sheet

-

PBSS4130QA

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Product data sheet

28 August 2013

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NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

15. Legal information

15.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Right to make changes — NXP Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. Unless otherwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer's own

risk.

Product

[short] data

sheet

Production

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

15.2 Definitions

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Customers are responsible for the design and operation of their

applications and products using NXP Semiconductors products, and NXP

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the NXP Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

15.3 Disclaimers

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, NXP Semiconductors does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

PBSS4130QA

All information provided in this document is subject to legal disclaimers.

Product data sheet

28 August 2013

15 / 17

NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

PBSS4130QA

All information provided in this document is subject to legal disclaimers.

Product data sheet

28 August 2013

16 / 17

NXP Semiconductors

PBSS4130QA

30 V, 1 A NPN low VCEsat (BISS) transistor

16. Contents

1

2

3

4

5

6

7

8

9

10

General description ............................................... 1

Features and benefits ............................................1

Applications ........................................................... 1

Quick reference data ............................................. 1

Pinning information ...............................................2

Ordering information .............................................2

Marking ...................................................................2

Limiting values .......................................................3

Thermal characteristics .........................................4

Characteristics .......................................................7

11

Test information ...................................................11

11.1

Quality information ............................................. 11

12

13

14

Package outline ................................................... 12

Soldering .............................................................. 13

Revision history ...................................................14

15

Legal information .................................................15

Data sheet status ............................................... 15

Definitions ...........................................................15

Disclaimers .........................................................15

Trademarks ........................................................ 16

15.1

15.2

15.3

15.4

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 28 August 2013

PBSS4130QA

All information provided in this document is subject to legal disclaimers.

Product data sheet

28 August 2013

17 / 17


型号：	PBSS4130QA
厂家：	NXP
描述：	30 V, 1 A NPN low VCEsat (BISS) transistor 30 V ，1 A NPN低VCEsat晶体管（ BISS ）晶体管晶体晶体管
文件：	总17页 (文件大小：265K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PBSS4130QA [NXP]

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