PBSS4160DPN/T2_技术文档

PBSS4160DPN

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

Rev. 03 — 11 December 2009

Product data sheet

1. Product profile

1.1 General description

NPN/PNP low V_CEsatBreakthrough in Small Signal (BISS) transistor pair in a SOT457

(SC-74) Surface Mounted Device (SMD) plastic package.

1.2 Features

Low collector-emitter saturation voltage V_CEsat

High collector current capability: I_Cand I_CM

High collector current gain (h_FE) at high I_C

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

Complementary MOSFET driver

Half and full bridge motor drivers

Dual low power switches (e.g. motors, fans)

Automotive applications

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

TR1 (NPN)

Conditions

Min

Typ

Max Unit

V_CEO

I_C

collector-emitter voltage

open base

-

60

1

V

[1]

[2]

collector current (DC)

peak collector current

-

A

I_CM

single pulse; t_p≤ 1 ms

-

2

A

R_CEsat

collector-emitter saturation I_C= 1 A; I_B= 100 mA

resistance

200

250

mΩ

TR2 (PNP)

V_CEO

I_C

collector-emitter voltage

collector current (DC)

peak collector current

open base

-

−60

V

[1]

[2]

-

−900 mA

I_CM

single pulse; t_p≤ 1 ms

-

−2

A

R_CEsat

collector-emitter saturation I_C= −1 A; I_B= −100 mA

250

330

mΩ

resistance

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

[2] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

2. Pinning information

Table 2.

Pinning

1

Description

emitter TR1

base TR1

Simplified outline

Symbol

6

5

4

6

5

2

4

2

3

collector TR2

emitter TR2

base TR2

TR2

TR1

1

4

1

2

3

5

3

6

collector TR1

sym019

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PBSS4160DPN SC-74

plastic surface mounted package; 6 leads

SOT457

4. Marking

Table 4.

Marking codes

Type number

Marking code

PBSS4160DPN

B4

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min

Max

Unit

Per transistor unless otherwise specified; for the PNP transistor with negative polarity

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

open emitter

open base

open collector

NPN

-

80

60

5

V

[1]

[2]

[1]

[2]

[3]

870

1

mA

A

PNP

770

900

1

mA

A

both

I_CM

I_B

peak collector current

base current (DC)

peak base current

single pulse; t_p≤ 1 ms

2

A

300

1

mA

A

I_BM

single pulse; t_p≤ 1 ms

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

2 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

290

370

450

Unit

mW

[1]

[2]

[3]

P_tot

total power dissipation

T_amb≤ 25 °C

-

Per device

[1]

[2]

[3]

P_tot

total power dissipation

T_amb≤ 25 °C

-

420

mW

°C

-

560

-

700

T_j

junction temperature

ambient temperature

storage temperature

-

150

T_amb

T_stg

−65

+150

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

006aaa493

800

(1)

P

tot

(mW)

600

(2)

(3)

400

200

0

40

80

120

160

(°C)

T

amb

(1) Ceramic PCB, Al₂O₃, standard footprint

(2) FR4 PCB, mounting pad for collector 1 cm²

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

3 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max

431

338

278

105

Unit

K/W

[1]

[2]

[3]

R_th(j-a)

thermal resistance from

in free air

-

junction to ambient

R_th(j-sp)

thermal resistance from

junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

006aaa494

3

10

δ = 1

Z

th(j-a)

0.75

0.33

(K/W)

0.50

2

10

0.20

0.10

0.05

0.02

0.01

10

0

1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

p

(s)

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

4 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

006aaa495

3

10

Z

th(j-a)

δ = 1

(K/W)

0.75

0.33

0.50

0.20

0.10

0.05

2

10

0.02

0.01

0

1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

p

(s)

FR4 PCB, mounting pad for collector 1 cm²

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

006aaa496

3

10

Z

th(j-a)

δ = 1

(K/W)

0.75

0.33

0.50

0.20

0.10

0.05

2

10

0.02

0.01

0

1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

p

(s)

Ceramic PCB, Al₂O₃, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

5 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

7. Characteristics

Table 7.

Characteristics

T

_amb= 25 °C unless otherwise specified.

Symbol Parameter

Per transistor unless otherwise specified; for the PNP transistor with negative polarity

Conditions

Min

Typ

Max Unit

I_CBO

collector-base cut-off

current

V_CB= 60 V; I_E= 0 A

-

100

50

nA

V_CB= 60 V; I_E= 0 A;

μA

T_j= 150 °C

I_CES

collector-emitter cut-off

current

V_CE= 60 V; V_BE= 0 V

-

100

nA

I_EBO

emitter-base cut-off current V_EB= 5 V; I_C= 0 A

-

nA

V

[1]

V_BEsat

base-emitter saturation

voltage

I_C= 1 A; I_B= 50 mA

0.95 1.1

V_BEon

base-emitter turn-on

voltage

V_CE= 5 V; I_C= 1 A

-

0.82 0.9

V

TR1 (NPN)

h_FE

DC current gain

V_CE= 5 V; I_C= 1 mA

V_CE= 5 V; I_C= 500 mA

V_CE= 5 V; I_C= 1 A

250

200

100

-

500

420

180

90

-

[1]

-

V_CEsat

collector-emitter saturation I_C= 100 mA; I_B= 1 mA

voltage

110

140

mV

I_C= 500 mA;

-

115

I_B= 50 mA

[1]

I_C= 1 A; I_B= 100 mA

-

200

250

mV

R_CEsat

collector-emitter saturation I_C= 1 A; I_B= 100 mA

resistance

mΩ

t_d

t_r

delay time

I_C= 0.5 A;

I_Bon= 25 mA;

I_Boff= −25 mA

-

11

-

ns

rise time

-

78

ns

t_on

t_s

turn-on time

storage time

fall time

-

90

ns

-

340

160

500

220

ns

t_f

-

ns

t_off

f_T

turn-off time

transition frequency

-

ns

V_CE= 10 V;

I_C= 50 mA;

f = 100 MHz

150

MHz

C_c

collector capacitance

DC current gain

V_CB= 10 V;

I_E= i_e= 0 A; f = 1 MHz

-

5.5

10

pF

TR2 (PNP)

h_FE

V_CE= −5 V; I_C= −1 mA

200

150

350

250

-

[1]

V_CE= −5 V;

I_C= −500 mA

V_CE= −5 V; I_C= −1 A

100

160

-

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

6 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

Table 7.

Characteristics …continued

T_amb= 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

V_CEsat

collector-emitter saturation I_C= −100 mA;

-

−110 −165 mV

−120 −175 mV

−250 −330 mV

voltage

I_B= −1 mA

I_C= −500 mA;

I_B= −50 mA

-

[1]

I_C= −1 A; I_B= −100 mA

-

R_CEsat

collector-emitter saturation I_C= −1 A; I_B= −100 mA

250

330

mΩ

resistance

t_d

t_r

delay time

I_C= −0.5 A;

I_Bon= −25 mA;

-

11

-

ns

rise time

-

30

ns

I

_Boff= 25 mA

t_on

t_s

turn-on time

storage time

fall time

-

41

ns

-

205

55

ns

t_f

-

ns

t_off

f_T

turn-off time

transition frequency

-

260

185

ns

V_CE= −10 V;

I_C= −50 mA;

f = 100 MHz

150

MHz

C_c

collector capacitance

V_CB= −10 V;

-

9

15

pF

I_E= i_e= 0 A; f = 1 MHz

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

7 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

006aaa505

006aaa506

800

1.2

V

(V)

BE

h

FE

(1)

(2)

1.0

0.8

0.6

0.4

0.2

600

(1)

(2)

(3)

400

200

0

(3)

−1

2

3

4

−1

2

3

4

10

1

10

(mA)

10

1

10

I (mA)

C

I

C

V_CE= 5 V

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 5. TR1 (NPN): DC current gain as a function of

collector current; typical values

Fig 6. TR1 (NPN): Base-emitter voltage as a function

of collector current; typical values

006aaa513

006aaa514

1

V

CEsat

(V)

V

CEsat

(V)

−1

10

(1)

(2)

−1

10

(1)

(2)

(3)

−2

10

−2

10

−3

10

−1

2

3

4

−1

2

3

4

1

10

(mA)

1

10

I (mA)

C

I

C

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 7. TR1 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 8. TR1 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

8 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

006aaa509

006aaa515

3

1.2

10

V

BEsat

(V)

R

CEsat

(Ω)

1.0

0.8

0.6

0.4

0.2

2

10

(1)

(2)

(3)

10

(1)

(2)

(3)

1

−1

10

−1

2

3

4

−1

2

3

4

10

1

10

(mA)

1

10

I (mA)

C

I

C

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 9. TR1 (NPN): Base-emitter saturation voltage as

a function of collector current; typical values

Fig 10. TR1 (NPN): Collector-emitter saturation

resistance as a function of collector current;

typical values

006aaa511

006aaa516

3

2.0

10

I

B

(mA) = 65.0

58.5

45.5

I

C

(A)

R

CEsat

52.0

39.0

(Ω)

1.6

32.5

19.5

2

10

26.0

13.0

6.5

1.2

0.8

0.4

0

10

(1)

(2)

1

(3)

−1

10

−1

2

3

4

0

1

2

3

4

5

1

10

(mA)

C

V

(V)

I

CE

T_amb= 25 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 11. TR1 (NPN): Collector current as a function of

collector-emitter voltage; typical values

Fig 12. TR1 (NPN): Collector-emitter saturation

resistance as a function of collector current;

typical values

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

9 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

006aaa474

006aaa476

600

−1.0

(1)

V

BE

h

FE

(V)

−0.8

−0.6

−0.4

−0.2

(1)

(2)

400

(2)

(3)

200

(3)

0

−10

−1

2

3

4

−1

2

3

4

−1

−10

(mA)

−10

−1

−10

I (mA)

C

I

C

V_CE= −5 V

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 13. TR2 (PNP): DC current gain as a function of

collector current; typical values

Fig 14. TR2 (PNP): Base-emitter voltage as a function

of collector current; typical values

006aaa489

006aaa490

−1

V

(V)

V

CEsat

(V)

−1

−10

(1)

(2)

(1)

(2)

(3)

−2

−10

−2

−10

−1

2

3

4

−1

2

3

4

−1

−10

(mA)

−1

−10

I (mA)

C

I

C

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 15. TR2 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 16. TR2 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

10 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

006aaa477

006aaa491

3

−1.1

10

V

BEsat

(V)

R

CEsat

(Ω)

−0.9

−0.7

−0.5

−0.3

−0.1

2

10

(1)

(2)

(3)

10

(1)

(2)

(3)

1

−1

−10

10

−1

2

3

4

−1

2

3

4

−10

−1

−10

(mA)

−1

−10

I (mA)

C

I

C

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 17. TR2 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

Fig 18. TR2 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

006aaa478

006aaa492

3

−2.0

10

I

B

(mA) = −35.0

−31.5

I

C

R

CEsat

(A)

−28.0

(Ω)

−24.5

−21.0

−1.6

−17.5

−14.0

2

10

−10.5

−7.0

−1.2

−0.8

−0.4

0.0

10

(1)

−3.5

(2)

(3)

1

−1

10

−1

2

3

4

0

−1

−2

−3

−4

−5

(V)

−10

−1

−10

I (mA)

C

V

CE

T_amb= 25 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 19. TR2 (PNP): Collector current as a function of

collector-emitter voltage; typical values

Fig 20. TR2 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

11 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

8. Test information

I

B

input pulse

90 %

(idealized waveform)

I

(100 %)

Bon

10 %

I

Boff

output pulse

(idealized waveform)

I

C

90 %

I

(100 %)

C

10 %

t

f

t

r

s

d

t

off

on

006aaa003

Fig 21. TR1 (NPN): BISS transistor switching time definition

V

CC

BB

R

C

B

V

o

(probe)

oscilloscope

450 Ω

R2

V

I

DUT

R1

mlb826

I_C= 0.5 A; I_Bon= 25 mA; I_Boff= −25 mA; R1 = open; R2 = 100 Ω; R_B= 300 Ω; R_C= 20 Ω

Fig 22. TR1 (NPN): Test circuit for switching times

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

12 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

−

I

B

input pulse

90 %

(idealized waveform)

−

I

(100 %)

Bon

10 %

−

I

Boff

output pulse

−

(idealized waveform)

I

C

90 %

−

I

(100 %)

C

10 %

t

f

t

r

s

d

006aaa266

t

off

on

Fig 23. TR2 (PNP): BISS transistor switching time definition

V

CC

BB

R

C

B

V

o

(probe)

oscilloscope

450 Ω

R2

V

I

DUT

R1

mgd624

I_C= −0.5 A; I_Bon= −25 mA; I_Boff= 25 mA; R1 = open; R2 = 100 Ω; R_B= 300 Ω; R_C= 20 Ω

Fig 24. TR2 (PNP): Test circuit for switching times

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

13 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

9. Package outline

3.1

2.7

1.1

0.9

6

5

4

0.6

0.2

3.0 1.7

2.5 1.3

pin 1 index

1

2

3

0.26

0.10

0.40

0.25

0.95

1.9

Dimensions in mm

04-11-08

Fig 25. Package outline SOT457 (SC-74)

10. Packing information

Table 8.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number

Package

Description

Packing quantity

3000

-115

-125

10000

-135

[2]

[3]

PBSS4160DPN SOT457

4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

-165

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

14 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

11. Soldering

3.45

1.95

solder lands

0.95

solder resist

0.45 0.55

2.825

3.30

occupied area

solder paste

1.60

1.70

3.10

3.20

msc422

Dimensions in mm

Fig 26. Reflow soldering footprint

5.30

solder lands

5.05

0.45 1.45 4.45

solder resist

occupied area

msc423

1.40

4.30

Dimensions in mm

Fig 27. Wave soldering footprint

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

15 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

12. Revision history

Table 9.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PBSS4160DPN_3

Modifications:

20091211

Product data sheet

-

PBSS4160DPN_2

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical

content.

• Figure 1, 7 and 15: updated

PBSS4160DPN_2

PBSS4160DPN_1

20050714

Product data sheet

-

PBSS4160DPN_1

-

20040603

Objective data sheet

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

16 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

13. Legal information

13.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Definitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between information in this document and such

terms and conditions, the latter will prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

PBSS4160DPN_3

Product data sheet

Rev. 03 — 11 December 2009

17 of 18

PBSS4160DPN

NXP Semiconductors

60 V, 1 A NPN/PNP low V_CEsat(BISS) transistor

15. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test information. . . . . . . . . . . . . . . . . . . . . . . . 12

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14

Packing information . . . . . . . . . . . . . . . . . . . . 14

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16

3

4

5

6

7

8

9

10

11

12

13

Legal information. . . . . . . . . . . . . . . . . . . . . . . 17

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17

13.1

13.2

13.3

13.4

14

15

Contact information. . . . . . . . . . . . . . . . . . . . . 17

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 December 2009

Document identifier: PBSS4160DPN_3


型号：	PBSS4160DPN/T2
厂家：	NXP
描述：	TRANSISTOR 1000 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, 6 PIN, BIP General Purpose Small Signal 开关光电二极管晶体管
文件：	总18页 (文件大小：258K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PBSS4160DPN/T2 [NXP]

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