PBSS5140V [NXP]

40 V low VCEsat PNP transistor; 40伏的低VCEsat晶体管PNP晶体管
PBSS5140V
型号: PBSS5140V
厂家: NXP    NXP
描述:

40 V low VCEsat PNP transistor
40伏的低VCEsat晶体管PNP晶体管

晶体 小信号双极晶体管 开关 光电二极管
文件: 总8页 (文件大小:49K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PBSS5140V  
40 V low VCEsat PNP transistor  
Product specification  
2002 Mar 20  
Supersedes data of 2001 Oct 19  
Philips Semiconductors  
Product specification  
40 V low VCEsat PNP transistor  
PBSS5140V  
FEATURES  
QUICK REFERENCE DATA  
300 mW total power dissipation  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin  
package  
VCEO  
IC  
collector-emitter voltage 40  
V
collector current (DC)  
peak collector current  
1  
2  
A
Improved thermal behaviour due to flat leads  
ICM  
A
Self alignment during soldering due to straight leads  
RCEsat  
equivalent on-resistance <340  
mΩ  
Low collector-emitter saturation voltage  
High current capability  
PINNING  
PIN  
DESCRIPTION  
APPLICATIONS  
1
2
3
4
5
6
collector  
collector  
base  
General purpose switching and muting  
LCD back lighting  
Supply line switching circuits  
emitter  
collector  
collector  
Battery driven equipment (mobile phones, video  
cameras and hand-held devices).  
DESCRIPTION  
PNP low VCE sat transistor in a SOT666 plastic package.  
NPN complement: PBSS4140V.  
handbook, halfpage  
6
5
4
1, 2, 5, 6  
MARKING  
3
TYPE NUMBER  
PBSS5140V  
MARKING CODE  
4
25  
1
Top view  
2
3
MAM446  
Fig.1 Simplified outline (SOT666) and symbol.  
2002 Mar 20  
2
Philips Semiconductors  
Product specification  
40 V low VCEsat PNP transistor  
PBSS5140V  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
40  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
V
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
base current (DC)  
open base  
40  
5  
V
open collector  
V
1  
A
ICM  
2  
A
IB  
300  
1  
mA  
A
IBM  
peak base current  
Ptot  
total power dissipation  
T
amb 25 °C; note 1  
amb 25 °C; note 2  
300  
500  
+150  
150  
+150  
mW  
mW  
°C  
°C  
°C  
T
Tstg  
Tj  
storage temperature  
65  
junction temperature  
Tamb  
operating ambient temperature  
65  
Notes  
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.  
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to ambient note 1  
note 2  
410  
215  
K/W  
K/W  
Notes  
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.  
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.  
Soldering  
The only recommended soldering is reflow soldering.  
2002 Mar 20  
3
Philips Semiconductors  
Product specification  
40 V low VCEsat PNP transistor  
PBSS5140V  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
VCB = 40 V; IE = 0  
CB = 40 V; IE = 0; Tamb = 150 °C  
MIN.  
TYP. MAX. UNIT  
ICBO  
collector-base cut-off current  
100  
50  
100  
100  
nA  
µA  
nA  
nA  
V
ICEO  
IEBO  
hFE  
collector-emitter cut-off current  
emitter-base cut-off current  
DC current gain  
VCE = 30 V; IB = 0  
VEB = 5 V; IC = 0  
VCE = 5 V; IC = 1 mA  
VCE = 5 V; IC = 100 mA  
300  
300  
250  
160  
800  
V
CE = 5 V; IC = 500 mA  
CE = 5 V; IC = 1 A  
V
VCEsat  
collector-emitter saturation voltage IC = 100 mA; IB = 1 mA  
IC = 500 mA; IB = 50 mA  
80  
120  
200  
240  
140  
170  
310  
mV  
mV  
mV  
IC = 1 A; IB = 100 mA  
RCEsat  
VBEsat  
VBEon  
fT  
equivalent on-resistance  
base-emitter saturation voltage  
base-emitter turn-on voltage  
transition frequency  
IC = 500 mA; IB = 50 mA; note 1  
IC = 1 A; IB = 50 mA  
<340 mΩ  
1.1  
1  
V
VCE = 5 V; IC = 1 A  
V
IC = 50 mA; VCE = 10 V;  
150  
MHz  
f = 100 MHz  
Cc  
collector capacitance  
VCB = 10 V; IE = Ie = 0; f = 1 MHz  
12  
pF  
Note  
1. Pulse test: tp 300 µs; δ ≤ 0.02.  
2002 Mar 20  
4
Philips Semiconductors  
Product specification  
40 V low VCEsat PNP transistor  
PBSS5140V  
PACKAGE OUTLINE  
Plastic surface mounted package; 6 leads  
SOT666  
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index  
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6  
0.5  
0.27  
0.17  
0.18  
0.08  
1.7  
1.5  
1.3  
1.1  
1.7  
1.5  
0.3  
0.1  
mm  
1.0  
0.5  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
01-01-04  
01-08-27  
SOT666  
2002 Mar 20  
5
Philips Semiconductors  
Product specification  
40 V low VCEsat PNP transistor  
PBSS5140V  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS(1)  
STATUS(2)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2002 Mar 20  
6
Philips Semiconductors  
Product specification  
40 V low VCEsat PNP transistor  
PBSS5140V  
NOTES  
2002 Mar 20  
7
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2002  
SCA74  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/02/pp8  
Date of release: 2002 Mar 20  
Document order number: 9397 750 09427  

相关型号:

PBSS5140V,115

PBSS5140V - 40 V low VCEsat PNP transistor SOT 6-Pin
NXP

PBSS5160DS

60 V, 1 A PNP low VCEsat (BISS) transistor
NXP

PBSS5160DS

60 V, 1 A PNP/PNP low VCEsat (BISS) transistorProduction
NEXPERIA

PBSS5160DS,115

PBSS5160DS - 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor TSOP 6-Pin
NXP

PBSS5160DST/R

TRANSISTOR,BJT,PAIR,PNP,60V V(BR)CEO,1A I(C),SOT-457
NXP

PBSS5160K

60 V, 1 A PNP low VCEsat (BISS) transistor
NXP

PBSS5160K

Transistor
PHILIPS

PBSS5160K,115

PBSS5160K
NXP

PBSS5160PAP

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
NXP

PBSS5160PAP

60 V, 1 A PNP/PNP low VCEsat (BISS) transistorProduction
NEXPERIA

PBSS5160PAP,115

PBSS5160PAP - 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor DFN 6-Pin
NXP

PBSS5160PAPS

60 V, 1 A PNP/PNP low VCEsat (BISS) transistorProduction
NEXPERIA