PBSS5320X [NXP]
20 V, 3 A PNP Low VCEsat (BISS) transistor; 20 V ，3A PNP低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS5320X |
| 厂家： | 
NXP |
| 描述： | 20 V, 3 A PNP Low VCEsat (BISS) transistor |
| 文件： | 总12页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS5320X
20 V, 3 A
PNP low VCEsat (BISS) transistor
Product specification
2004 Nov 04
Supersedes data of 2003 Nov 27
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320X
FEATURES
QUICK REFERENCE DATA
• SOT89 (SC-62) package
SYMBOL
PARAMETER
MAX. UNIT
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
VCEO
IC
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−20
−3
V
A
ICM
−5
A
RCEsat
105
mΩ
PINNING
PIN
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
DESCRIPTION
1
2
3
emitter
collector
base
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load driver (e.g. relays,
buzzers and motors).
2
1
3
DESCRIPTION
PNP low VCEsat transistor in a SOT89 plastic package.
NPN complement: PBSS4320X.
sym079
3
2
1
MARKING
TYPE NUMBER
PBSS5320X
MARKING CODE
Fig.1 Simplified outline (SOT89) and symbol.
S45
ORDERING INFORMATION
PACKAGE
DESCRIPTION
TYPE NUMBER
NAME
SC-62
VERSION
SOT89
PBSS5320X
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2004 Nov 04
2
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
V
V
A
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
open base
−20
−5
open collector
note 4
−3
ICM
limited by Tj(max)
−5
IB
−0.5
Ptot
total power dissipation
Tamb ≤ 25 °C
note 1
−
−
−
−
550
1
mW
W
note 2
note 3
1.4
W
note 4
1.6
W
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
−
+150
150
+150
°C
°C
°C
Tamb
−65
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
2004 Nov 04
3
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320X
MLE372
2
handbook, halfpage
P
tot
(W)
(1)
1.6
(2)
1.2
(3)
0.8
(4)
0.4
0
0
40
80
120
160
(°C)
T
amb
(1) Ceramic PCB; 7 cm2
mounting pad for collector.
(3) FR4 PCB; 1 cm2 copper
mounting pad for collector.
(2) FR4 PCB; 6 cm2 copper
mounting pad for collector.
(4) Standard footprint.
Fig.2 Power derating curves.
2004 Nov 04
4
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
note 1
note 2
note 3
note 4
225
125
90
K/W
K/W
K/W
K/W
K/W
80
Rth(j-s)
thermal resistance from junction to soldering point
16
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
006aaa243
3
10
Z
th
(1)
(3)
(K/W)
(2)
(4)
2
10
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
5
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320X
006aaa244
3
10
Z
th
(K/W)
(1)
2
10
(2)
(4)
(3)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa245
3
10
Z
th
(K/W)
2
(1)
(3)
10
(2)
(4)
(5)
(6)
(7)
10
(8)
(9)
1
(10)
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
6
2004 Nov 04
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = −20 V; IE = 0 A
VCB = −20 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off current VCE = −20 V; VBE = 0 V
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
−
−
−
−100
−50
nA
µA
nA
nA
−
−
−
ICES
IEBO
hFE
−100
−100
emitter-base cut-off current
DC current gain
VEB = −5 V; IC = 0 A
VCE = −2 V
IC = −0.1 A
220
220
200
150
100
−
−
−
IC = −0.5 A
−
−
IC = −1 A; note 1
−
−
IC = −2 A; note 1
−
−
IC = −3 A; note 1
−
−
VCEsat
collector-emitter saturation
voltage
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −2 A; IB = −100 mA
IC = −3 A; IB = −300 mA; note 1
IC = −3 A; IB = −300 mA; note 1
−
−70
−130
−230
−300
105
−
mV
mV
mV
mV
mΩ
V
−
−
−
−
−
−
RCEsat
VBEsat
equivalent on-resistance
−
90
−1.1
−
base-emitter saturation voltage IC = −2 A; IB = −100 mA
IC = −3 A; IB = −300 mA; note 1
−
−
−1.2
−
V
VBEon
fT
base-emitter turn-on voltage
transition frequency
VCE = −2 V; IC = −1 A
−1.1
100
−
V
IC = −100 mA; VCE = −5 V;
−
−
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A; f = 1 MHz
−
−
50
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Nov 04
7
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320X
MLE374
MLE368
−1.2
800
handbook, halfpage
(1)
h
V
FE
BE
(V)
600
(1)
(2)
(3)
−0.8
(2)
400
(3)
−0.4
200
0
−10
0
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
(mA)
I
I
C
C
VCE = −2 V.
VCE = −2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 DC current gain as a function of collector
current; typical values.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
MLE370
MLE371
−1
−1
handbook, halfpage
handbook, halfpage
V
V
CEsat
CEsat
(V)
(V)
−1
−1
−10
−10
(1)
(3)
(2)
(1)
(2)
−2
−2
−10
−10
(3)
−3
−3
−10
−10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
I
−10
(mA)
−10
−1
−10
−10
−10
I
−10
(mA)
C
C
IC/IB = 20.
(1) amb = 100 °C.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 04
8
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320X
MLE369
MLE376
3
−10
10
handbook, halfpage
handbook, halfpage
R
CEsat
(Ω)
2
10
V
BEsat
(V)
10
1
−1
(1)
(2)
(3)
(1)
(3)
−1
10
(2)
2
−1
−2
−10
10
−1
3
4
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
C
C
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
Fig.10 Base-emitter saturation voltage as a
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
function of collector current; typical values.
MLE375
MLE367
2
−5
10
(1)
(2)
(3)
(4)
handbook, halfpage
handbook, halfpage
I
C
(A)
R
CEsat
(Ω)
−4
(5)
(6)
10
(7)
(8)
−3
−2
1
(9)
(1)
(3)
(2)
(10)
−1
10
−1
−2
10
0
0
−1
2
3
4
−0.4
−0.8
−1.2
−1.6
−2
(V)
−10
−1
−10
−10
−10
−10
(mA)
I
V
C
CE
Tamb = 25 °C.
(1) IB = −25 mA.
(2) IB = −22.5 mA.
(3) IB = −20 mA.
(4) IB = −17.5 mA.
(5) IB = −15 mA.
(6) IB = −12.5 mA.
(7) IB = −10 mA.
(8) IB = −7.5 mA.
(9) IB = −5 mA.
(10) IB = −2.5 mA.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
2004 Nov 04
9
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320X
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-09-13
04-08-03
SOT89
TO-243
SC-62
2004 Nov 04
10
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320X
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Nov 04
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/03/pp12
Date of release: 2004 Nov 04
Document order number: 9397 750 13887
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