PBSS8110Z [NXP]
100 V, 1 A NPN low VCEsat (BISS) transistor; 100 V ，1 A NPN低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS8110Z |
| 厂家： | 
NXP |
| 描述： | 100 V, 1 A NPN low VCEsat (BISS) transistor |
| 文件： | 总12页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS8110Z
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 01 — 26 April 2004
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat transistor in a plastic SOT223 (SC-73) package.
1.2 Features
■ SOT223 package
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High efficiency, leading to less heat generation.
1.3 Applications
■ Major application segments:
◆ Automotive 42 V power
◆ Telecom infrastructure
◆ Industrial.
■ DC-to-DC converter
■ Peripheral driver
◆ Driver in low supply voltage applications (e.g. lamps and LEDs)
◆ Inductive load drivers (e.g. relays, buzzers and motors).
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
1
Unit
V
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
-
-
-
-
-
-
-
-
A
ICM
3
A
RCEsat
200
mΩ
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Discrete pinning
Pin
1
Description
base
Simplified outline
Symbol
4
2, 4
2, 4
3
collector
emitter
1
3
sym016
1
2
3
Top view
3. Ordering information
Table 3:
Ordering information
Type number Package
Name
Description
Version
SOT223
PBSS8110Z
-
plastic surface mounted package; collector pad for good
heat transfer; 4 leads
4. Marking
Table 4:
Marking
Type number
Marking code[1]
PBSS8110Z
PB8110
[1] Made in Hong Kong.
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2004
2 of 12
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
ICM
Parameter
Conditions
open emitter
open base
open collector
Tj(max)
Min
Max
120
100
5
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
collector current (DC)
base current (DC)
-
-
V
-
V
-
3
A
IC
-
1
A
IB
-
0.3
650
1000
1.4
150
+150
+150
A
[1]
[2]
[3]
Ptot
total power dissipation
T
amb ≤ 25 °C
-
mW
mW
W
-
-
Tj
junction temperature
-
°C
°C
°C
Tamb
Tstg
operating ambient temperature
storage temperature
−65
−65
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting
pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting
pad.
001aaa508
1.6
P
tot
(W)
1.2
(1)
(2)
(3)
0.8
0.4
0
0
40
80
120
160
(°C)
T
amb
(1) FR4 PCB; 6 cm2 collector mounting pad.
(2) FR4 PCB; 1 cm2 collector mounting pad.
(3) FR4 PCB; standard footprint.
Fig 1. Power derating curves.
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2004
3 of 12
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Typ
192
125
89
Unit
K/W
K/W
K/W
K/W
[1]
[2]
[3]
[1]
thermal resistance in free air
from junction to
ambient
Rth(j-s)
thermal resistance in free air
from junction to
17
soldering point
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting pad.
001aaa713
3
10
Z
th
(K/W)
2
(1)
(2)
(3)
(4)
10
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(S)
p
Mounted on FR4 PCB; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig 2. Transient thermal impedance as a function of pulse time; typical values.
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2004
4 of 12
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off VCB = 80 V; IE = 0 A
current
-
-
-
-
VCB = 80 V; IE = 0 A;
µA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter
cut-off current
VCE 80 V; VBE = 0 V
VEB = 4 V; IC = 0 A
-
-
-
-
100
100
nA
nA
emitter-base cut-off
current
DC current gain
VCE = 10 V; IC = 1 mA
VCE = 10 V; IC = 250 mA
VCE = 10 V; IC = 0.5 A
VCE = 10 V; IC = 1 A
150
-
-
150
-
500
-
[1]
[1]
100
-
80
-
-
-
VCEsat
collector-emitter
saturation voltage
IC = 100 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 1 A; IB = 100 mA
-
40
120
200
200
mV
mV
mV
mΩ
-
-
-
-
[1]
RCEsat
VBEsat
VBEon
fT
equivalent
on-resistance
-
160
base-emitter
saturation voltage
IC = 1 A; IB = 100 mA
-
-
-
-
-
1.05
0.9
-
V
base-emitter turn-on VCE 10 V; IC = 1 A
voltage
-
V
transition frequency
VCE = 10 V; IC = 50 mA;
f = 100 MHz
100
-
MHz
pF
Cc
collector capacitance VCB = 10 V; IE = Ie = 0 A;
f = 1 MHz
7.5
[1] Pulse test tp ≤ 300 µs; δ ≤ 0.02.
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2004
5 of 12
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa497
001aaa495
600
1000
V
BE
(mV)
h
FE
(1)
(2)
(3)
800
(1)
(2)
400
600
400
200
200
(3)
0
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 10 V.
VCE = 10 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig 3. DC current gain as a function of collector
current; typical values.
Fig 4. Base-emitter voltage as a function of collector
current; typical values.
001aaa504
001aaa505
3
3
10
10
V
V
CEsat
CEsat
(mV)
(mV)
2
2
10
10
(1)
(2)
(3)
10
10
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 10.
IC/IB = 20; Tamb = 25 °C.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values.
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2004
6 of 12
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa506
001aaa498
4
10
1200
BEsat
V
(mV)
V
CEsat
(mV)
1000
3
2
(1)
10
800
600
400
200
(2)
(3)
10
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 50; Tamb = 25 °C.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values.
001aaa499
001aaa500
1200
1000
V
(mV)
BEsat
V
BEsat
(mV)
1000
800
800
600
400
600
400
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20; Tamb = 25 °C.
IC/IB = 50; Tamb = 25 °C.
Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values.
Fig 10. Base-emitter saturation voltage as a function of
collector current; typical values.
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2004
7 of 12
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa496
001aaa501
3
2
10
I
C
R
CEsat
(Ω)
(1)
(2)
(3)
(4)
(A)
1.6
2
10
(5)
(6)
1.2
0.8
0.4
0
(7)
(8)
10
(9)
(10)
1
(1)
(2)
(3)
−1
10
−1
2
3
4
0
1
2
3
4
5
10
1
10
10
10
10
I (mA)
C
V
(V)
CE
Tamb = 25 °C.
(1) IB = 35 mA.
(2) IB = 31.5 mA.
(3) IB = 28 mA.
(4) IB = 24.5 mA.
(5) IB = 21 mA.
(6) IB = 17.5 mA.
(7) IB = 14 mA.
(8) IB = 10.5 mA.
(9) IB = 7 mA.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(10) IB = 3.5 mA.
Fig 11. Collector current as a function of
Fig 12. Equivalent on-resistance as a function of
collector current; typical values.
collector-emitter voltage; typical values.
001aaa502
001aaa503
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
10
10
1
1
−1
−1
10
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20; Tamb = 25 °C.
IC/IB = 50; Tamb = 25 °C.
Fig 13. Equivalent on-resistance as a function of
collector current; typical values.
Fig 14. Equivalent on-resistance as a function of
collector current; typical values.
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2004
8 of 12
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
8. Package outline
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-73
97-02-28
99-09-13
SOT223
Fig 15. Package outline.
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2004
9 of 12
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
9. Revision history
Table 8:
Revision history
Document ID
Release date Data sheet status
20040426 Product data
Change notice
Order number
Supersedes
PBSS8110Z_1
-
9397 750 12568
-
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2004
10 of 12
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
10. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 12568
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 April 2004
11 of 12
PBSS8110Z
Philips Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 26 April 2004
Document order number: 9397 750 12568
Published in The Netherlands
相关型号：
PBSS8510PA
5200mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2 X 2 MM, 0.65 MM HEIGHT, ULTRA THIN, PLASTIC, LEADLESS, HUSON-3
NXP
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