PDTC143XS [NXP]
NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW; NPN电阻配备晶体管; R 1 = 4.7千瓦， R2 = 10千瓦
| 型号： | PDTC143XS |
| 厂家： | 
NXP |
| 描述： | NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW |
| 文件： | 总12页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
Rev. 09 — 26 July 2005
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistors (RET) family.
Table 1:
Product overview
Type number
Package
Philips
SOT416
SOT490
SOT346
SOT883
SOT54
PNP complement
JEITA
SC-75
SC-89
SC-59A
SC-101
SC-43A
-
JEDEC
PDTC143XE
PDTC143XEF
PDTC143XK
PDTC143XM
PDTC143XS[1]
PDTC143XT
PDTC143XU
-
PDTA143XE
PDTA143XEF
PDTA143XK
PDTA143XM
PDTA143XS
PDTA143XT
PDTA143XU
-
TO-236
-
TO-92
SOT23
TO-236AB
-
SOT323
SC-70
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
■ Built-in bias resistors
■ Reduces component count
■ Simplifies circuit design
■ 100 mA output current capability
■ Reduces pick and place costs
1.3 Applications
■ Digital applications
■ Controlling IC inputs
■ Cost-saving alternative for BC847 series
in digital applications
■ Switching loads
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
Quick reference data
Parameter
Conditions
Min
-
Typ
-
Max
50
Unit
V
collector-emitter voltage
output current
open base
-
-
100
6.1
2.6
mA
kΩ
R1
bias resistor 1 (input)
bias resistor ratio
3.3
1.7
4.7
2.1
R2/R1
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
2. Pinning information
Table 3:
Pinning
Pin
Description
Simplified outline
Symbol
SOT54
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
1
1
1
1
1
2
3
R2
001aab347
006aaa145
SOT54A
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
R1
R1
R1
1
2
R2
3
001aab348
006aaa145
SOT54 variant
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
1
2
3
R2
001aab447
006aaa145
SOT23; SOT323; SOT346; SOT416; SOT490
1
2
3
input (base)
3
3
2
GND (emitter)
output (collector)
R2
1
2
006aaa144
sym007
SOT883
1
2
3
input (base)
1
2
3
2
GND (emitter)
output (collector)
3
Transparent
top view
R2
sym007
PDTC143X_SER_9
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
2 of 12
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
3. Ordering information
Table 4:
Ordering information
Type number Package
Name
Description
Version
SOT416
SOT490
SOT346
SOT883
PDTC143XE
SC-75
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
PDTC143XEF SC-89
PDTC143XK
PDTC143XM
SC-59A
SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
PDTC143XS[1] SC-43A
plastic single-ended leaded (through hole) package; SOT54
3 leads
PDTC143XT
PDTC143XU
-
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
SOT23
SC-70
SOT323
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5:
Marking codes
Type number
PDTC143XE
PDTC143XEF
PDTC143XK
PDTC143XM
PDTC143XS
PDTC143XT
PDTC143XU
Marking code[1]
34
54
26
E2
TC143X
*32
*53
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PDTC143X_SER_9
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
3 of 12
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
VI
Parameter
Conditions
open emitter
open base
Min
Max
50
50
7
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
-
-
-
V
open collector
V
positive
-
-
-
-
+20
−7
V
negative
V
IO
output current
100
100
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Ptot
total power dissipation
SOT416
Tamb ≤ 25 °C
[1]
[1] [2]
[1]
-
150
250
250
250
500
250
200
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°C
SOT490
-
SOT346
-
[2] [3]
[1]
SOT883
-
SOT54
-
[1]
SOT23
-
[1]
SOT323
-
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
-
°C
Tamb
−65
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
PDTC143X_SER_9
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
4 of 12
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
6. Thermal characteristics
Table 7:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[1] [2]
[1]
SOT416
SOT490
SOT346
SOT883
SOT54
-
-
-
-
-
-
-
-
-
-
-
-
-
-
833
500
500
500
250
500
625
K/W
K/W
K/W
K/W
K/W
K/W
K/W
[2] [3]
[1]
[1]
SOT23
[1]
SOT323
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
7. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
ICBO collector-base cut-off VCB = 50 V; IE = 0 A
Min
Typ
Max
Unit
-
-
100
nA
current
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
-
-
1
µA
µA
VCE = 30 V; IB = 0 A;
50
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
600
µA
hFE
DC current gain
VCE = 5 V; IC = 10 mA
IC = 10 mA; IB = 0.5 mA
50
-
-
-
-
VCEsat
collector-emitter
100
mV
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 100 µA
on-state input voltage VCE = 300 mV; IC = 20 mA
bias resistor 1 (input)
-
-
0.3
-
V
2.5
3.3
1.7
-
-
V
4.7
2.1
-
6.1
2.6
2.5
kΩ
R2/R1
Cc
bias resistor ratio
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
pF
PDTC143X_SER_9
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
5 of 12
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
006aaa178
006aaa179
3
3
10
10
h
FE
(2)
(1)
(3)
V
CEsat
(mV)
2
10
2
10
(2) (1)
(3)
10
1
10
10
−1
2
2
1
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa180
006aaa181
2
10
10
V
I(on)
(V)
V
I(off)
(V)
10
(1)
(2)
1
(1)
(2)
(3)
(3)
1
−1
−1
10
10
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of collector
current; typical values
Fig 4. Off-state input voltage as a function of collector
current; typical values
PDTC143X_SER_9
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
6 of 12
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
8. Package outline
3.1
2.7
1.3
1.0
1.8
1.4
0.95
0.60
3
0.6
0.2
3
0.45
0.15
3.0 1.7
2.5 1.3
1.75 0.9
1.45 0.7
1
2
1
2
0.30
0.15
0.25
0.10
0.50
0.35
0.26
0.10
1.9
1
Dimensions in mm
04-11-04
Dimensions in mm
04-11-11
Fig 5. Package outline SOT416 (SC-75)
Fig 6. Package outline SOT346 (SC-59A/TO-236)
0.62
0.55
0.50
0.46
0.55
0.47
0.45
0.38
4.2
3.6
3
0.30
0.22
0.48
0.40
1.02
0.95
0.65
1
2
4.8
4.4
0.30
0.22
2.54
1.27
3
2
1
0.20
0.12
5.2
5.0
14.5
12.7
0.35
Dimensions in mm
03-04-03
Dimensions in mm
04-11-16
Fig 7. Package outline SOT883 (SC-101)
Fig 8. Package outline SOT54 (SC-43A/TO-92)
0.45
0.38
0.45
0.38
4.2
3.6
4.2
3.6
1.27
0.48
0.40
3 max
1
2
3
2.5
0.48
max
0.40
1
4.8
4.4
2
5.08
4.8
4.4
2.54
1.27
3
2.54
5.2
5.0
14.5
12.7
5.2
5.0
14.5
12.7
Dimensions in mm
04-06-28
Dimensions in mm
05-01-10
Fig 9. Package outline SOT54A
Fig 10. Package outline SOT54 variant
PDTC143X_SER_9
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
7 of 12
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
3.0
2.8
1.1
0.9
2.2
1.8
1.1
0.8
0.45
0.15
3
3
0.45
0.15
2.5 1.4
2.1 1.2
2.2 1.35
2.0 1.15
1
2
1
2
0.4
0.3
0.25
0.10
0.48
0.38
0.15
0.09
1.9
1.3
Dimensions in mm
04-11-04
Dimensions in mm
04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
Fig 12. Package outline SOT323 (SC-70)
1.7
1.5
0.8
0.6
3
0.5
0.3
1.7 0.95
1.5 0.75
1
2
0.2
0.1
0.33
0.23
1
Dimensions in mm
98-10-23
Fig 13. Package outline SOT490 (SC-89)
PDTC143X_SER_9
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
8 of 12
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
9. Packing information
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package
Description
Packing quantity
3000 4000 5000 10000
PDTC143XE SOT416
PDTC143XEF SOT490
PDTC143XK SOT346
PDTC143XM SOT883
PDTC143XS SOT54
SOT54A
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
bulk, straight leads
-115
-
-
-135
-
-
-115
-
-115
-
-
-
-
-
-
-
-
-
-135
-315
-
-
-
-
-412
tape and reel, wide pitch
-
-
-116
-126
-
tape ammopack, wide pitch
-
-
SOT54 variant bulk, delta pinning
-
-112
PDTC143XT SOT23
PDTC143XU SOT323
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-215
-115
-
-
-235
-135
[1] For further information and the availability of packing methods, see Section 15.
PDTC143X_SER_9
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
9 of 12
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
10. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status Change notice Doc. number
Supersedes
PDTC143X_SER_9
Modifications:
20050726
Product data sheet
-
-
PDTC143X_SERIES_8
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• Section 1.2 “Features”: amended
• Section 1.3 “Applications”: amended
• Table 6 “Limiting values”: typing error for value of VEBO emitter-base voltage corrected
• Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage
• Table 8 “Characteristics”: Vi(off) redefined to VI(off) off-state input voltage
• Figure 1, 2, 3, 4, 9 and 10: added
• Figure 5, 6, 7, 8, 11, 12 and 13: superseded by minimized package outlines
• Section 9 “Packing information”: added
• Section 14 “Trademarks”: added
PDTC143X_SERIES_8 20040806
PDTC143X_SERIES_7 20040323
PDTC143X_SERIES_6 20040112
PDTC143X_SERIES_5 20031112
PDTC143X_SERIES_4 20030910
PDTC143X_SERIES_3 20030410
Product
specification
-
-
-
-
-
-
9397 750 13676 PDTC143X_SERIES_7
9397 750 12962 PDTC143X_SERIES_6
9397 750 12444 PDTC143X_SERIES_5
9397 750 12196 PDTC143X_SERIES_4
9397 750 11736 PDTC143X_SERIES_3
Product
specification
Product
specification
Product
specification
Product
specification
Product
specification
9397 750 11022 PDTC143XE_2
PDTC143XK_1
PDTC143XT_1
PDTC143XE_2
PDTC143XE_1
PDTC143XK_1
PDTC143XT_1
19990521
19980529
20020115
19990420
Product
specification
-
-
-
-
9397 750 05865 PDTC143XE_1
Product
specification
9397 750 03914 -
Product
specification
9397 750 09147 -
Product
9397 750 04931 -
specification
PDTC143X_SER_9
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
10 of 12
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
Notice — All referenced brands, product names, service names and
13. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
PDTC143X_SER_9
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
11 of 12
PDTC143X series
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
13
14
15
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 26 July 2005
Document number: PDTC143X_SER_9
Published in The Netherlands
相关型号：
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NXP
PDTC143XTT/R
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
NXP
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