PEMT1 [NXP]
PNP general purpose double transistor; PNP通用双晶体管
| 型号： | PEMT1 |
| 厂家： | 
NXP |
| 描述： | PNP general purpose double transistor |
| 文件： | 总8页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PEMT1
PNP general purpose double
transistor
Product specification
2001 Nov 07
Supersedes data of 2001 Sep 25
Philips Semiconductors
Product specification
PNP general purpose double transistor
PEMT1
FEATURES
PINNING
• 300 mW total power dissipation
PIN
1, 4
2, 5
6, 3
DESCRIPTION
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
emitter
base
TR1; TR2
TR1; TR2
TR1; TR2
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
collector
• Reduced required PCB area
• Reduced pick and place costs.
6
1
5
2
4
APPLICATIONS
6
5
4
• General purpose switching and amplification.
TR2
TR1
DESCRIPTION
PNP transistor pair in a SOT666 plastic package.
NPN complement: PEMX1.
1
2
3
3
Top view
MAM450
MARKING
TYPE NUMBER
PEMT1
MARKING CODE
Fig.1 Simplified outline (SOT666) and symbol.
FF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
−
−
−
−
−
−
−
−50
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−40
open collector
−5
−100
−200
−200
200
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
+150
150
°C
Tamb
−65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Note
1. Transistor mounted on an FR4 printed-circuit board.
2001 Nov 07
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
PEMT1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
notes 1 and 2
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
416
K/W
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
amb = 25 °C; unless otherwise specified.
SYMBOL PARAMETER
Per transistor
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −30 V; IE = 0
−
−
−
−100
nA
VCB = −30 V; IE = 0; Tj = 150 °C
VEB = −4 V; IC = 0
−10
−100
−
µA
IEBO
hFE
emitter-base cut-off current
DC current gain
nA
VCE = −6 V; IC = −1 mA
120
VCEsat
collector-emitter saturation
voltage
IC = −50 mA; IB = −5 mA; note 1
−
−200
mV
Cc
fT
collector capacitance
transition frequency
VCB = −12 V; IE = Ie = 0; f = 1 MHz
−
2.2
pF
VCE = −12 V; IC = −2 mA;
100
−
MHz
f = 100 MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MHB987
400
handbook, halfpage
h
FE
300
200
100
0
−10
−1
2
3
−1
−10
−10
−10
I
(mA)
C
VCE = −5 V.
Fig.2 DC current gain as a function of collector
current; typical values.
2001 Nov 07
3
Philips Semiconductors
Product specification
PNP general purpose double transistor
PEMT1
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
01-01-04
01-08-27
SOT666
2001 Nov 07
4
Philips Semiconductors
Product specification
PNP general purpose double transistor
PEMT1
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 07
5
Philips Semiconductors
Product specification
PNP general purpose double transistor
PEMT1
NOTES
2001 Nov 07
6
Philips Semiconductors
Product specification
PNP general purpose double transistor
PEMT1
NOTES
2001 Nov 07
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8
Date of release: 2001 Nov 07
Document order number: 9397 750 09051
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