PESD12VS1UB,115 [NXP]
PESDxS1UB series - ESD protection diodes in SOD523 package SOD 2-Pin;
| 型号： | PESD12VS1UB,115 |
| 厂家： | 
NXP |
| 描述： | PESDxS1UB series - ESD protection diodes in SOD523 package SOD 2-Pin 局域网 光电二极管 |
| 文件： | 总15页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PESDxS1UB series
ESD protection diodes in SOD523 package
Rev. 02 — 24 August 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one
transmission or data line from the damage caused by ESD (ElectroStatic Discharge) and
other transients.
1.2 Features
I Unidirectional ESD protection of one line
I Max. peak pulse power: PPP = 330 W at tp = 8/20 µs
I Low clamping voltage: VCL = 20 V at IPP = 18 A
I Ultra low leakage current: IRM < 700 nA
I ESD protection > 23 kV
I IEC 61000-4-2, level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 18 A at tp = 8/20 µs
1.3 Applications
I Computers and peripherals
I Communication systems
I Audio and video equipment
I Data lines
I CAN bus protection
1.4 Quick reference data
Table 1.
Symbol
VRWM
Quick reference data
Parameter
Conditions
Value
Unit
reverse standoff voltage
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
3.3
5
V
V
V
V
V
12
15
24
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
Table 1.
Quick reference data …continued
Symbol
Parameter
Conditions
VR = 0 V; f = 1 MHz
Value
Unit
Cd
diode capacitance
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
207
152
38
32
23
1
pF
pF
pF
pF
pF
number of protected
lines
2. Pinning information
Table 2.
Discrete pinning
Pin
1
Description
cathode
Simplified outline
Symbol
[1]
1
2
2
anode
1
2
sym035
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
PESDxS1UB
SC -79 plastic surface mounted package; 2 leads
SOD523
4. Marking
Table 4.
Marking
Type number
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
Marking code
N1
N2
N3
N4
N5
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
2 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
[1]
PPP
peak pulse power
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
peak pulse current
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
junction temperature
8/20 µs
-
-
-
-
-
330
260
180
160
160
W
W
W
W
W
[1]
IPP
8/20 µs
-
18
15
5
A
-
A
-
A
-
5
A
-
3
A
Tj
-
150
+150
°C
°C
Tamb
operating ambient
temperature
−65
Tstg
storage temperature
−65
+150
°C
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform; see Figure 1.
Table 6.
Symbol
ESD
ESD maximum ratings
Parameter
Conditions
Min
Max
Unit
[1]
electrostatic discharge
capability
IEC 61000-4-2
(contact discharge)
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
PESDxS1UB series
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
HBM MIL-STD883
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 7.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2, level 4 (ESD)
HBM MIL-STD883, class 3
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
3 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
001aaa631
I
PP
001aaa630
120
100 %
90 %
100 % I ; 8 µs
PP
I
PP
(%)
80
−t
e
50 % I ; 20 µs
PP
40
10 %
t
t = 0.7 ns to 1 ns
r
0
30 ns
60 ns
0
10
20
30
40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
IEC 61000-4-5
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
4 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff voltage
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
reverse leakage current
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
breakdown voltage
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
diode capacitance
-
-
-
-
-
-
-
-
-
-
3.3
5
V
V
V
V
V
12
15
24
IRM
VBR
Cd
see Figure 7
VRWM = 3.3 V
VRWM = 5 V
VRWM = 12 V
VRWM = 15 V
VRWM = 24 V
IR = 5 mA
-
-
-
-
-
0.7
0.1
< 1
< 1
< 1
2
µA
µA
nA
nA
nA
1
50
50
50
5.2
5.6
6.0
V
V
V
V
V
6.4
6.8
7.2
14.7
17.6
26.5
15.0
18.0
27.0
15.3
18.4
27.5
VR = 0 V; f = 1 MHz;
see Figure 5 and 6
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
clamping voltage
PESD3V3S1UB
-
-
-
-
-
207
152
38
300
200
75
pF
pF
pF
pF
pF
32
70
23
50
[1]
V(CL)R
IPP = 1 A
IPP = 18 A
IPP = 1 A
IPP = 15 A
IPP = 1 A
IPP = 5A
IPP = 1 A
IPP = 5 A
IPP = 1 A
IPP = 3 A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7
V
V
V
V
V
V
V
V
V
V
20
9
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
20
19
35
23
40
36
70
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
5 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rdiff
differential resistance
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 1 mA
IR = 0.5 mA
-
-
-
-
-
-
-
-
-
-
400
80
Ω
Ω
Ω
Ω
Ω
200
225
300
[1] Non-repetitive current pulse 8/20 µs exponentially decay waveform; see Figure 1.
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
6 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
001aaa147
001aaa193
4
10
1.2
P
PP
P
pp
(W)
P
PP(25°C)
3
10
0.8
(1)
(2)
2
10
0.4
10
0
2
3
4
1
10
10
10
10
0
50
100
150
200
t
(µs)
T (°C)
j
p
Tamb = 25 °C
tp = 8/20 µs exponentially decay waveform,
see Figure 1
(1) PESD3V3S1UB and PESD5V0S1UB
(2) PESD12VS1UB, PESD15VS1UB; PESD24VS1UB
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
001aaa148
001aaa149
240
50
C
d
C
d
(pF)
200
(pF)
40
160
120
80
30
20
10
0
(1)
(2)
(1)
(2)
(3)
40
0
1
2
3
4
5
0
5
10
15
20
25
V
(V)
V (V)
R
R
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3S1UB
(2) PESD5V0S1UB
(1) PESD12VS1UB
(2) PESD15VS1UB
(3) PESD24VS1UB
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
7 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
001aaa270
10
I
R
I
R(25˚C)
(1)
1
−1
10
−100
−50
0
50
100
150
T (°C)
j
(1) PESD3V3S1UB; VRWM = 3.3 V
PESD5V0S1UB; VRWM = 5 V
IR is less than 10 nA at 150 °C for:
PESD12VS1UB; VRWM = 12 V
PESD15VS1UB; VRWM = 15 V
PESD24VS1UB; VRWM = 24 V
Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
8 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
R
Z
450 Ω
10×
ATTENUATOR
C
Z
50 Ω
1
2
D.U.T.: PESDxS1UB
IEC 61000-4-2 network
= 150 pF; R = 330 Ω
C
Z
Z
vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
PESD24VS1UB
PESD15VS1UB
PESD12VS1UB
PESD5V0S1UB
GND
GND
GND
GND
GND
PESD3V3S1UB
GND
unclamped +1 kV ESD voltage waveform
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
(IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
006aaa001
Fig 8. ESD clamping test setup and waveforms
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
9 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
7. Application information
The PESDxS1UB series is designed for unidirectional protection of one single data line
from the damage caused by ESD (ElectroStatic Discharge) and Surge Pulses. The
PESDxS1UB series may be used on lines where the signal polarity is above or below
ground. The PESDxS1UB series provides a surge capability of up to 330 Watts per line for
a 8/20 µs waveform.
line to be protected
line to be protected
(positive signal polarity)
(negative signal polarity)
PESDxS1UB
PESDxS1UB
ground
ground
uni-directional protection of one line
006aaa002
Fig 9. Unidirectional protection of one line
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, EFT and Surge transients.
The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
10 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
8. Package outline
Plastic surface-mounted package; 2 leads
SOD523
A
c
v
M
A
H
E
A
D
0
0.5
1 mm
scale
1
2
DIMENSIONS (mm are the original dimensions)
b
E
p
UNIT
A
b
c
D
E
H
v
p
E
0.34
0.26
0.17
0.11
0.65
0.58
1.25
1.15
0.85
0.75
1.65
1.55
mm
0.1
(1)
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEITA
02-12-13
06-03-16
SOD523
SC-79
Fig 10. Package outline
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
11 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
9. Packing information
Table 9.
Possible packing methods
The indicated -xxx are the last three digits of the 12 NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
−135
−135
−135
−135
−135
PESD3V3S1UB
PESD5V0S1UB
PESD12VS1UB
PESD15VS1UB
PESD24VS1UB
SOD523
SOD523
SOD523
SOD523
SOD523
4 mm pitch, 8 mm tape and reel −115
4 mm pitch, 8 mm tape and reel −115
4 mm pitch, 8 mm tape and reel −115
4 mm pitch, 8 mm tape and reel −115
4 mm pitch, 8 mm tape and reel −115
[1] For further information see Section 12.
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
12 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
10. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESDXS1UB_SERIES_2 20090824
Product data
-
PESDXS1UB_SERIES_1
Modifications:
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 10 “Package outline”: updated
PESDXS1UB_SERIES_1 20040614
Product data
-
-
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
13 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PESDXS1UB_SERIES_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
14 of 15
PESDxS1UB series
NXP Semiconductors
ESD protection diodes in SOD523 package
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 August 2009
Document identifier: PESDXS1UB_SERIES_2
相关型号：
PESD12VS1UJ,115
PESD5V0S1UJ; PESD12VS1UJ - Unidirectional ESD protection for transient voltage suppression SOD 2-Pin
NXP
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